感应耦合等离子体刻蚀p-GaN的表面特性

研究了p-GaN材料经感应耦合等离子体(ICP)刻蚀后的表面特性,并用不同的方法对刻蚀表面进行处理.利用原子力显微镜(AFM)和X射线光电子能谱(XPS)对刻蚀样品进行分析,并在样品表面制作Ni/Au电极,进行欧姆接触特性的测试.实验结果表明了NaOH溶液处理表面对改善材料表面和欧姆接触特性是比较有效的. 关键词： GaN 感应耦合等离子刻蚀 表面处理 欧姆接触     

感应耦合等离子体刻蚀在聚合物光波导制作中的应用

提出了利用感应耦合等离子体(ICP)刻蚀技术提高聚合物光波导器件性能的方法,介绍了ICP刻蚀技术的原理和优点。选取聚甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯(P(MMA-GMA))作为波导材料,采用氧气作为刻蚀气体,研究了ICP参数变化对刻蚀效果的影响。介绍了倒脊形光波导的制备过程,采用改变单一工艺参数的方法,分析了刻蚀效果随时间、功率、压强、气体流量等参数的变化,对参数优化后刻蚀得到的凹槽和平板结构进行了表征。实验结果表明:在天线射频功率为300 W,偏置射频功率为30 W,气体压强为0.5 Pa,氧气流速为50 cm³/min的条件下,可获得侧壁陡直、底面平整的P(MMA-GMA)凹槽结构。     

感应耦合等离子体刻蚀InP/InGaAsP二维光子晶体结构的研究

为实现基于InP/InGaAsP材料的二维光子晶体结构低损伤、高各向异性的干法刻蚀，研究了对InP材料基于Cl₂/BCl₃气体的感应耦合等离子体刻蚀. 从等离子体轰击使衬底升温的角度分析了刻蚀机理，发现离子轰击加热引起的侧蚀与物理溅射在侧壁再沉积之间处于平衡时可以得到高各向异性刻蚀，平衡点将随ICP功率增高而向偏压减小方向移动，从而在近203 V偏压下得到陡直的侧壁. 在优化气体组分后，成功实现了光子晶体结构高各向异性的低偏压刻蚀. 关键词： 光子晶体 InP/InGaAsP 感应耦合等离子体 2/BCl₃')" href="#">Cl₂/BCl₃ 低偏压刻蚀     

射频感应耦合低压等离子体特性分析

采用光谱诊断法和Langmuir单探针法对射频感应耦合Ar气等离子体特性进行分析。通过光栅光谱仪研究了低气压下Ar气等离子体的光谱强度的变化特性,采用Langmuir单探针法测量不同条件下电子密度和电子温度。等离子体发射光谱的光谱强度随着气压和功率的增加而增强,射频功率对光谱强度的影响较明显。当功率从120W增加到180W时,光谱强度将会迅速增加,等离子体发生E模向H模的模式转换。Langmuir单探针法测量的电子密度和电子温度在的变化规律符合E模向H模转换的变化规律。     

Pd/p-GaN欧姆接触退化机理

近几年,Ⅲ-Ⅴ族半导体GaN由于其宽直接带隙,在高温、高功率器件方面得到了广泛研究。但是,目前GaN器件的性能依然受到了p型欧姆接触性能不良的限制,在长期使用过程或高温环境中激光器等器件性能退化严重。因此,获得性能优异的p-GaN接触仍然是一个巨大的挑战。虽然Pd基的金属体系已然在p-GaN获得了欧姆接触,但是Pd与GaN接触之后的微观结构及其高温特性尚不为人知。本文针对常用于p型GaN接触的第一层金属Pd材料,讨论了Pd/p-GaN接触界面的特性和退化机制。通过四探针测试仪、X射线光电子能谱(XPS)和原子力显微镜(AFM)实验测试和分析对比,发现Pd/p-GaN界面受到氧气和温度影响的退化过程。高温退火在界面处促成Ga-Pd合金相生成利于形成良好的接触,但是在有氧参与的情况下,金属的氧化反应超越其他因素成为主导,致使界面和性能发生明显的退化。温度越高退化越严重,甚至表面形貌状态完全改变,由平滑的原子台阶形貌转化呈现出树枝状晶粒状态。因此,保持Pd与p-GaN界面清洁、控制界面的氧成分不仅是形成合金态获得良好接触的关键,而且也关系着器件的长期稳定和可靠,是防止器件性能衰减和退化要害所在。     

感应耦合等离子体中和枪的电子引出特性研究

给出了一种感应耦合等离子体源的设计,用于等离子体中和枪装置.通过实验方法研究等离子体源的电子引出特性,并结合理论分析了等离子体密度随射频功率的变化关系.研究结果表明等离子体源的电子引出特性与放电腔内气压有关联性,E?H模式转换中电子密度的变化与负载的电感值相关.研究成果对等离子体中和枪的发展有重要的参考价值.     

感应耦合等离子体的1维流体力学模拟

采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

感应耦合等离子体的1维流体力学模拟

 采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching

GaN hollow nanocolumns were formed by inductively coupled plasma etching. It was found that the tops of the GaN nanocolumns were hexagonal with the c axis perpendicular to the substrate surface. It was also found that the density of the GaN nanocolumns depends strongly on etching parameters, which suggests that the formation of these GaN nanocolumns was not related to the dislocation density in the original GaN epitaxial layers. With an Ar concentration of 42.86%, it was found that the diameter of the whole nanocolumns was around 80 nm and the diameter of the nanocavities inside these nanocolumns was around 40 nm, while the density of the nanocolumns was around 4.4×10⁹ cm^-2. PACS 68.65.-K; 61.70.+w; 81.10.BK     

Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis

Inductively coupled plasma (ICP) etching of GaN with an etching depth up to 4 μm is systemically studied by varying ICP power, RF power and chamber pressure, respectively, which results in etch rates ranging from ∼370 nm/min to 900 nm/min. The surface morphology and damages of the etched surface are characterized by optical microscope, scanning electron microscope, atomic force microscopy, cathodoluminescence mapping and photoluminescence (PL) spectroscopy. Sub-micrometer-scale hexagonal pits and pillars originating from part of the structural defects within the original GaN layer are observed on the etched surface. The density of these surface features varies with etching conditions. Considerable reduction of PL band-edge emission from the etched GaN surface indicates that high-density non-radiative recombination centers are created by ICP etching. The density of these non-radiative recombination centers is found largely dependent on the degree of physical bombardments, which is a strong function of the RF power applied. Finally, a low-surface-damage etch recipe with high ICP power, low RF power, high chamber pressure is suggested.     

Properties of inductively coupled plasma source with helical coil

This paper presents modeling and experimental results of the voltage, current, and density profiles of a helical resonator plasma source. The source has a 5/4-wavelength (λ) helical resonator structure with the helical coil short-circuited at one end and open circuited at the other end. When the radio frequency (RF) tap for power feeding was located at an odd multiple of λ/4 from the short-circuited end, the observed voltage, current, and plasma density were higher in the short-circuited section than those in the open-circuited section. The opposite property was observed with the RF tap at an even multiple of λ/4. A microstrip transmission line model was used to explain the experimental results. The model accurately predicted the RF voltage and current profiles. After calculation of RF voltage and current, the plasma density was solved numerically. The difference between the calculated and measured plasma density was within a factor of two. The changes on the density profile indicate that the transport properties of plasma can be adjusted with the RF tap position     

Three-dimensional modelling of inductively coupled plasma torches

A three-dimensional model has been developed for simulating the behaviour of inductively coupled plasma torches (ICPTs), using customized CFD commercial code FLUENT ^?. The helicoidal coil is taken into account in its actual 3-D shape, showing the effects of its non-axisymmetry on the plasma discharge. Steady state, continuity, momentum and energy equations are solved for argon optically thin plasmas under the assumptions of LTE and laminar flow. The electromagnetic field is obtained by solving the 3-D vector potential equation on a grid extending outside the torch region. In order to evaluate the importance of various 3-D effects on calculated plasma temperature and flow fields, comparisons of our new results with the ones obtainable from conventional 2-D models and from an improved 2-D model that includes 3-D coil effects are presented. The presence of wall temperature hot spots due to plasma discharge displacement from the torch axis is evidenced, while the use of the new 3-D code for optimization of induction coil geometry and plasma gas inlet features is foreseen. Received 5 September 2002 Published online 13 December 2002 RID="a" ID="a"e-mail: colombo@ciram.ing.unibo.it     

Standardless analysis of solids by mass spectrometry with inductively coupled plasma

The possibility of the standardless mass spectrometric analysis of the elemental composition of solids has been discussed. The effect of each stage of the laser plasma expansion on the formation of the coefficient of relative sensitivity of elements in the sample has been studied theoretically and experimentally. It has been shown that the stages of ionization and detection make the main contribution to the formation of the coefficient of relative sensitivity. It has been proposed to separate dissociation and ionization processes in time and/or in space. To compensate for the energy spread of ions at the output of the analyzer, a circuit has been proposed for aligning the energy of ions before their detection.     

Diagnostics of the inductively coupled plasma by diode laser absorption spectroscopy

A vertical-cavity surface-emitting diode laser is used as a tunable emission source to measure the radius-integrated gas temperature in an inductively coupled plasma reactor. Relevant data are obtained by profiling the Doppler-broadened absorption of metastable Ar atoms at 763.51 nm in argon and argon-nitrogen (3, 45, and 90% N₂ in Ar) plasmas in the pressure range 0.5–70.0 Pa and at an inductive power of 100 and 300 W. The results are compared with the rotational temperature of molecular nitrogen. The difference between the integrated rotational and Doppler temperatures is attributed to the nonuniform spatial distributions of the temperature and thermometric atomic and molecular species (Ar* and N*₂). These distributions are computed in terms of the nonequilibrium hydrodynamic model of plasma. The objective of this work is to develop a contactless (nonintrusive) technique for measuring the temperature and concentration of different particles in the reactor with a microsensor.     

多源感应耦合等离子体的产生及等离子体诊断

基于单组多匝线圈的小腔体感应耦合等离子体，研究了线圈配置与耦合效率等之间的关联，并将实验结果应用到多组并联螺旋天线感应耦合等离子体放电体系中.采用了改进的朗谬尔探针方法对单源和多源感应耦合等离子体的电参量分别进行了表征.结果表明，使用多螺旋天线并联方式可以产生低气压高密度的感应耦合等离子体放电，通过调整工艺参量，可以将等离子体密度和光刻胶的刻蚀均匀性控制在80％以上. 关键词： 多源感应耦合等离子体 朗谬尔探针 等离子体灰化     

Diagnostics of an inductively coupled plasma in oxygen

Spatial time-integrated and space-time resolved profiles of excited atoms of oxygen were measured by optical emission spectroscopy for inductively coupled plasma (ICP) in oxygen. The discharge was sustained by a single turn coil supplied by 13.56 MHz RF generator delivering 100 and 200 W of power. The spatial emission profiles give the anatomy of the discharge required in order to understand the basic kinetics of ICP. Two types of nonuniformities are observed, azimuthal anisotropy and radial nonuniformity, both caused by spatially dependent energy supply to the electrons. Our experimental results show that oxygen is much more affected by azimuthal anisotropy and radial nonuniformity than argon. It is due to a different role of metastable atoms in kinetics of excitation, whereby stepwise excitation in oxygen is less probable than in argon. Optical emission data are supplemented by Langmuir probe measurements of electron densities and plasma potentials. Electrons gain energy from the time varying fields close to the coil, and the energy is not redistributed along the radius before it is dissipated in excitation, thus the observations are not consistent with the nonlocal theory predictions for the range of pressures, geometry, and power covered in this paper