Influence of quantization of band states on the effective electron mass in quaternary alloys

Summary An attempt is made to study the effective electron mass in quaternary alloys, taking a In_1−x Ga _x As _y P_1−y lattice matched to InP, by using the three-band Kane model under different physical conditions,e.g. bulk specimens, magnetic quantization, cross-field configuration, quantum well, electric-field-aided quantum well, magnetic-field-aided quantum well, quantum well under cross fields, quantum well wires, electric-field-aided quantum well wires, magnetic-field-aided quantum well wires and quantum well wires under cross fields by formulating the respective expressions. We have plotted the effective Fermi level mass with various physical variables under different conditions. In the presence of a quantizing magnetic field the effective mass depends on the spin splitting of Landau levels due to the spin-orbit splitting parameter of the valence bands. Under cross-field configuration and the various quantum confined low-dimensional systems, the effective masses depend on the respective quantum numbers in addition to the Fermi energies even for parabolic models because of the inherent features of such systems. In addition, the corresponding results for relatively wide-gap materials have also been obtained from our generalized formulations under certain limiting conditions.     

A computational study of nonparabolic conduction band effect on quantum wire transport (e.g. GaN)

We studied the physics insight the GaN (example) quantum wire FET transistors. The model is based on the four $\mathbf{k}{\cdot } \mathbf{p}$ k · p Kane band model. We have introduced closed compact model for the Einstein relation of the diffusivity to mobility ratio (DMR) in quantum wires. The model can be applied for both wide and narrow band gaps of nonparabolic conduction band dispersion. The model is related to the optical matrix elements between conduction and valence bands. We have used 1D electrostatic to model the electron density over the maximum energy point. We have studied the effects of gate-to-source and drain-to-source voltages on the DMR by calculating the electron density using flux theory. We observed that above the threshold the non-parabolic dispersion increases the DMR. Additionally, we have studied the nonparabolic effects on the Fermi level and found that for low doping concentrations, the nonparabolic effect must be considered and an accurate calculation for the optical matrix elements is needed.     

A simple analysis of the subband energies in quantum-confined non-parabolic semiconductors in the presence of a parallel magnetic field

Summary We study the subband energies in quantum wells and quantum wires in the presence of a parallel magnetic field in non-parabolic semiconductors, on the basis of a generalized dispersion relation considering all types of anisotropies of the energy-band parameters within the framework ofk·p formalism, by formulating the respective electron energy spectra. It is found, by takingn-Cd₃As₂ as an example, that the subband energies are greater for quantum wires and smaller for quantum wells, respectively. The magnetic field diminishes the above values and the corresponding well-known results for quantum-confined parabolic semiconductors have also been obtained from our generalized expressions under certain limiting conditions.     

InxGa1-xAs-GaAs应变层量子阱结构的流体静压光荧光研究

本文报道了对分子束外延(MBE)生长的In_0.25Ga_0.75As-GaAs应变层量子阱结构在77K下的压力光荧光(PL)研究的结果。流体静压力从0到50kbar.,给出了In_0.25Ga_0.75As-GaAs应变层量子阱的Γ谷压力系数,实验观察到了量子阱中能级与势垒GaAs中X谷的能级交叉。通过对其压力行为的分析,给出了In_0.25Ga_0.75As-GaAs异质结的导带与价带跃变比:Q_c=△E_c:△E_v=0.68:0.32。对(InGa)As-GaAs应变量子阱常压下的理论分析与实验符合很好。本文也对Al_0.3Ga_0.70As-GaAs量子阱进行了讨论。 关键词：     

Fabrication and optical properties of quantum dots and wires

We describe photoluminescence measurements made on mesa geometry quantum dots and wires with exposed side walls fabricated by laterally patterning undoped GaAs/AlGaAs quantum wells using electron beam lithography and dry etching. At low temperature the photoluminescence efficiency of many but not all of the GaAs quantum dot arrays scales with the volume of quantum well material down to lateral dimensions of 50nm. This behaviour contrasts with that found in wires produced at the same time where the intensity falls off rapidly with decreasing wire width for dimensions below 500nm but is recovered by overgrowth with indium tin oxide, possibly as a result of strain. Narrow overgrown wires exhibit anisotropy in polarized excitation spectra which is discussed in relation to strain and lateral confinement effects.     

Magnetoexciton binding energies for parabolic confinement in cylindrical quantum wire structures

In this work, using the effective mass approximation within variational approach, we have studied the behavior of the excitonic binding energies in a cylindrical quantum wire with a parabolic confinement under the effect of externally applied magnetic field. We have shown that the excitonic binding energy is sensitive to the magnetic field value in contrast to the other potential profiles studied in literature such as rectangular quantum wells (wires).     

Strain dependence of valence band structure and intersubband transitions in coupled quantum wells

We have calculated the structure of the valence bands and its dependence on strain in a lattice mismatched quantum well, and in double quantum wells with equal and unequal well thicknesses. We have used the 4×4 Luttinger-Kohn Hamiltonian and the envelope function approximation. Further the character of the strain dependence of optical transitions in valence band was analysed in all of these structures. It has been found that the strain dependence of the valence band structure and optical momentum matrix elements is stronger in the double quantum well than in the single quantum well. This result is potentially useful in valence band engineering and device applications.     

Charge and energy transfer in double asymmetric quantum wells with quantum dots

The luminescence and luminescence excitation spectra of CdSe/ZnSe quantum dots are studied in a set of double quantum wells with the ZnSe barrier of width 14 nm, the same amount of a deposited CdSe layer forming a deep well and shallow wells with different depths. It is found that for a certain relation between the depths of shallow and deep wells in this set, conditions are realized under which the exciton channel in the luminescence excitation spectrum of a shallow well dominates in the region of kinetic exciton energies exceeding 10 longitudinal optical phonons above the bottom of the exciton band of the ZnSe barrier. A model is developed for the transfer of electrons, holes, and excitons between the electronic states of shallow and deep quantum wells separated by wide enough barriers. It is shown that the most probable process of electronic energy transfer between the states of shallow and deep quantum wells is indirect tunneling with the simultaneous excitation of a longitudinal optical phonon in the lattice. Because the probability of this process for single charge carriers considerably exceeds the exciton tunneling probability, a system of double quantum wells can be prepared in which, in the case of weak enough excitation, the states of quantum dots in shallow quantum wells will be mainly populated by excitons, which explains experimental results obtained.     

Generalized path integral method for Elliott-Yafet spin relaxations in quantum wells and narrow wires

We generalized the semiclassical path integral method originally used in the D'yakonov-Perel' mechanism to study the spin relaxation of the Elliott-Yafet mechanism in low-dimensional systems. In quantum wells, the spin properties calculated by this method confirmed the experimental results. In two-dimensional narrow wires, size and impurity effects on the Elliott-Yafet relaxation were predicted, including the wire-width-dependent relaxation time, the polarization evolution on the sample boundaries, and the relaxation behavior during the diffusive-ballistic transition. These properties were compared with those of the D'yakonov-Perel' relaxation calculated under similar conditions. For ballistic narrow wires, we derived an exact relation between the Elliott-Yafet relaxation time and the wire width, which confirmed the above simulations.     

Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dots

Transient photoluminescence of GaAs/AlGaAs quantum wires and quantum dots formed by strain confinement is studied as a function of temperature. At low temperature, luminescent decay times of the wires and dots correspond to the radiative decay times of localized excitons. The radiative decay time can be either longer or shorter than that of the host quantum well, depending on the size of the wires and dots. For small wires and dots (∼ 100 nm stressor), the exciton radiative recombination rate increases due to lateral confinement. Exciton localization due to the fluctuation of quantum well thickness plays an important role in the temperature dependence of luminescent decay time and exciton transfer in quantum wire and dot structures up to at least ∼ 80 K. Lateral exciton transfer in quantum wire and dot structures formed by laterally patterning quantum wells strongly affects the dynamics of wire and dot luminescence. The relaxation time of hot excitons increases with the depth of strain confinement, but we find no convincing evidence that it is significantly slower in quasi 1-D or 0-D systems than in quantum wells.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.     

Exciton trapping, binding and diamagnetic shift in T-shaped quantum wires

We determine the exciton states of T-shaped quantum wires. We use anisotropic effective-mass models to describe the electron and hole states. Pair correlation along the wire axis and in the lateral directions is included. We accurately model the measured redshifts between exciton photoluminescence in quantum wells and T-shaped wires. This redshift arises from enhanced exciton binding and the difference between well and wire confinement energy. We predict a large enhancement of binding energy only when lateral correlation is included, indicating that T-shaped wires arequasirather thanquantum1D wires. We calculate exciton shapes and diamagnetic shifts to determine how the exciton is distorted when confined in a T-wire.     

单轴应力对量子阱红外探测器吸收波长的影响

以单轴应力作用下超晶格量子阱应变能带理论为基础,采用电子反射与干涉方法,研究了单轴应力对超晶格能带的影响,推导了单轴应力与超晶格导带子能级的定量关系。以GaAs-AlGaAs-GaAs为例,具体计算了导带中子能级对应力的依赖关系,进而给出了单轴应力对n型AlGaAs-GaAs量子阱红外探测器(QWIP)吸收波长的影响。计算结果表明,随着单轴压应力的增大,量子阱红外探测器的吸收波长表现出较明显的变化。当单轴压力增大到1.3GPa,量子阱红外探测器的吸收峰值移动了将近1.1μm,并且基本与应力呈线性关系。量子阱红外探测器吸收波长连续可调范围5.57～4.46μm。     

Nonlinear absorption of light pulses under conditions of two-photon resonance in bulk crystals and nanostructures in the femtosecond pump-probe spectroscopy mode

A theory of nonlinear absorption of femtosecond light pulses by bulk crystals and nanostructures of different dimensions in the pump-probe spectroscopy mode has been developed. Expressions for the energy absorbed from the probe pulse under conditions of two-photon resonances are derived for transitions between the discrete or band electronic states and between the size-quantization subband states in quantum wells and quantum wires. The dependences of the energy absorbed from the probe pulse on the two-photon resonance detuning and on the time delay between the pulses are analyzed. The dependence of the power absorbed from the probe pulse on the time is also obtained.     

Quantum Transport in the Black‐Hole Configuration of an Atom Condensate Outcoupled Through an Optical Lattice

The outcoupling of a Bose‐Einstein condensate through an optical lattice provides an interesting scenario to study quantum transport phenomena or the analog Hawking effect as the system can reach a quasi‐stationary black‐hole configuration. We devote this work to characterize the quantum transport properties of quasi‐particles on top of this black‐hole configuration by computing the corresponding scattering matrix. We find that most of the features can be understood in terms of the usual Schrödinger scattering. In particular, a transmission band appears in the spectrum, with the normal‐normal transmission dominating over the anomalous‐normal one. We show that this picture still holds in a realistic experimental situation where the actual Gaussian envelope of the optical lattice is considered. A peaked resonant structure is displayed near the upper end of the transmission band, which suggests that the proposed setup is a good candidate to provide a clear signal of spontaneous Hawking radiation.     

Optical and electronic properties of single modulation doped GaAs/AlGaAs V-grooved quantum wire modified by ion implantation

1 Introduction Recently, there is considerable interest in the fabrication and study of quasi-one di-mensional quantum wires (QWRs) due to their potential application for novel optoelec-tronic devices such as QWR laser array [1,2] etc. Among the various techniques devel-oped for producing quasi-one dimensional (quasi-1D) QWRs, the self-organized growth on patterned substrates has been proven to be one of the most promising methods, due to the simplicity of fabrication[3―5]. The QWR is fa…     

On the effective electron mass in quantum well wires of ternary chalcopyrite semiconductors

Summary An attempt is made to study effective electron mass in quantum well wires of ternary chalcopyrite semiconductors by formulating a new 1D dispersion relation, within the framework of thek·p formalism considering the anisotropies in the band parameters. It is found, taking quantum well wires ofn-CdGeAs₂ as an example, that the effective Fermi level mass depends on the subband index due to the combined influence of crystal-field splitting parameter and the anisotropic spinorbit splitting parameters, respectively. The masses increase with increasing carrier degeneracy and decreasing film thickness, respectively. In addition, the well-known results for the corresponding parabolic energy bands have been derived as special cases of the generalized formulations.     

Interface-Optical-Phonon Modes in Quasi-one-dimensional Wurtzite Rectangular Quantum Wires

By employing the dielectric continuum model and Loudon's uniaxial crystal model, the interface optical (IO) phonon modes in a freestanding quasi-one-dimensional (Q1D) wurtzite rectangular quantum wire are derived and analyzed. Numerical calculation on a freestanding wurtzite GaN quantum wire is performed. The results reveal that the dispersion frequencies of IO modes sensitively depend on the geometric structures of the Q1D wurtzite rectangular quantum wires, the free wave-number k_z in z-direction and the dielectric constant of the nonpolar matrix. The degenerating behavior of the IO modes in Q1D wurtzite rectangular quantum wire has been clearly observed in the case of small wave-number k_z and large ratio of length to width of the rectangular crossing profile. The limited frequency behaviors of IO modes have been analyzed deeply, and detailed comparisons with those in wurtzite planar quantum wells and cylindrical quantum wires are also done. The present theories can be looked on as a generalization of that in isotropic rectangular quantum wires, and it can naturally reduce to the case of Q1D isotropic quantum wires once the anisotropy of the wurtzite material is ignored.     

Spatial imaging of two-dimensional electronic states in semiconductor quantum wells

We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.