Spectrum of Exciton in a Quantum Wire

In the present work we obtain the wave function and the corresponding energy of exciton confined within a quantum wire. What we do is to obtain the approximate analytical solution of the corresponding Schrödinger equation for the quantum wire in the presence of Coulomb and confining terms. We then calculate the energy and the binding energy of the exciton. By using the obtained energy of exciton, we calculate the corresponding wave length. The comparison of the obtained wave length with the emitted wave length from the semiconductor under study shows a good agreement with experimental results.     

外电场对InGaAsP/InP量子阱内激子结合能的影响

在有效质量近似下采用变分法计算了InGaAsP/InP量子阱内不同In组分下的激子结合能,分析了结合能随阱宽和In组分的变化情况,并且讨论了外加电场对激子结合能的影响. 结果表明：激子结合能是阱宽的一个非单调函数,随阱宽的变化呈现先增加后减小的趋势;随着In组分增大,激子结合能达到最大值的阱宽相应变小,这与材料的带隙改变有关;在一定范围内电场的存在对激子结合能的影响很小,但电场强度较大时会破坏激子效应. 关键词： 激子 InGaAsP/InP量子阱 结合能 电场     

Excitons in CdS and CdSe semiconducting quantum wires with dielectric barriers

Features of the photoluminescence spectra observed for various polarizations and intensities of the pumping radiation and the kinetics of photoluminescence of the CdS and CdSe nanocrystals grown in hollow nanochannels of an Al₂O₃ matrix are explained in terms of exciton transitions in semiconducting quantum wires with dielectric barriers. The observed exciton transition energies coincide with the values calculated with an allowance for the effects of quantum confinement and the “dielectric enhancement” of excitons. The latter effect is manifested by a significant increase in the Coulomb attraction between electrons and holes (the exciton binding energy exceeds 100 meV) due to a difference between the permittivities of semiconductor and insulator. It is shown that the exciton transition energy remains constant when the quantum wire diameter varies within broad limits. This is related to the fact that a growth in the one-dimensional bandgap width of the quantum wire caused by a decrease in the diameter is compensated by an increase in the exciton binding energy.     

Photoionization of a charged exciton in a GaAs/GaAlAs corrugated quantum well

Binding energies of a charged exciton as a function of well width of a GaAs/GaAlAs corrugated quantum well are investigated. The calculations have been performed by the variational method based on a two parametric trial wave function within a single band effective mass approximation. We have also included the effect of nonparabolicity of the conduction band of GaAs. We study the spectral dependence of the charged exciton in a GaAs/GaAlAs corrugated quantum well as a function of well width. The photoionization cross section for the charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The cross-section behavior as a function of incident energy is entirely different in the two cases of radiation being x-direction (along the growth direction) or z-direction. The interband emission energy as a function of well width is calculated and the dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width. Our results are compared with the other existing literature available.     

Polaronic shift of the Wannier-Mott exciton binding energy in a quantum wire with allowance for the phonon confinement effect

Within the framework of the Li-Low-Pines model the interaction of a Wannier-Mott exciton with polar optical phonons in a cylindrical semiconductor wire is studied, taking into account the phonon confinement effect. An analytical expression for the exciton binding energy with allowance for the polaronic effect is obtained. Numerical calculations of the binding energy are carried out for AlAs/GaAs/AlAs and ZnSe/CdSe/ZnSe wires with a various degree of polarity of quantum wire materials. The polaronic shift of the binding energy of light and heavy hole excitons is calculated.     

强耦合表面激子内部激发态的性质

采用线性组合算符和幺正变换方法,研究极性晶体中强耦合表面激子内部激发态的性质.计算了表面激子的激发态能量、激发能量和平均声子数.     

Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well

Exciton states and optical properties in wurtzite (WZ) InGaN/GaN quantum well (QW) are investigated theoretically, considering finite barrier width and built-in electric field effects. Numerical results show that when the barrier width increases, the ground-state exciton binding energy, the interband transition energy and the integrated absorption probability increase first and then they are insensitive to the variation of the barrier width. For any barrier width, the ground-state exciton binding energy and the integrated absorption probability have a maximum when the well width is 1 nm; moreover, the integrated absorption probability goes to zero when the well width is larger than 6 nm. In addition, the competition effects between the built-in electric field and quantum confinement are also investigated in the WZ InGaN/GaN QW.     

Exciton optical absorption coefficients and refractive index changes in a strained InAs/GaAs quantum wire: The effect of the magnetic field

Magnetic field induced exciton binding energy is investigated in a strained InAs/GaAs quantum wire within the framework of single band effective mass approximation. The strain contribution to the potential is determined through deformation potentials. The interband emission energy of strained InAs/GaAs wire is investigated in the influence of magnetic field with the various structural parameters. Magnetic field induced photoionization cross section of the exciton is studied. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of magnetic field are analyzed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and the magnetic field. The occurred blueshift of the resonant peak due to the magnetic field will give the information about the variation of two energy levels in the quantum well wire. The optical absorption coefficients and the refractive index changes are strongly dependent on the incident optical intensity and the magnetic field.     

Laser field induced interband absorption in a strained GaAs/GaAlAs double quantum well system

Effect of laser field intensity on exciton binding energies is investigated in a GaAs/ GaAlAs double quantum well system. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of laser field. The laser field induced photoionization cross-section for the exciton placed at the centre of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross-section on photon energy is carried out for the excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The intense laser field dependence of interband absorption coefficient is investigated. The results show that the exciton binding energy, interband emission energy, the photoionization cross-section and the interband absorption coefficient depend strongly on the well width and the laser field intensity. Our results are compared with the other existing literature available.     

Variational calculations of ionized-donor-bound excitons in GaAs-Al x Ga 1 - x As quantum wells

Using a two-parameter wave function, we calculate variationally the binding energy of an exciton bound to an ionized donor impurity (D^+,X) in GaAs-Al_xGa_1-xAs quantum wells for the values of the well width from 10 to 300 ?, when the dopant is located in the center of the well and at the edge of the well. The theoretical results confirm that the previous experimental speculation proposed by Reynolds et al. [Phys. Rev. B 40, 6210 (1989)] is the binding energy of D^+,X for the dopant at the edge of the well. In addition, we also calculate the center-of-mass wave function of the exciton and the average interparticle distances. The results are discussed in detail. Received 17 July 2000 and Received in final form 13 November 2000     

Exciton trapping, binding and diamagnetic shift in T-shaped quantum wires

We determine the exciton states of T-shaped quantum wires. We use anisotropic effective-mass models to describe the electron and hole states. Pair correlation along the wire axis and in the lateral directions is included. We accurately model the measured redshifts between exciton photoluminescence in quantum wells and T-shaped wires. This redshift arises from enhanced exciton binding and the difference between well and wire confinement energy. We predict a large enhancement of binding energy only when lateral correlation is included, indicating that T-shaped wires arequasirather thanquantum1D wires. We calculate exciton shapes and diamagnetic shifts to determine how the exciton is distorted when confined in a T-wire.     

Exciton states in wurtzite InGaN/GaN quantum wells: Strong built-in electric field and interface optical-phonon effects

Considering the strong built-in electric field (BEF) effects and large exciton–phonon interactions, we investigate the exciton states confined in an InGaN/GaN single quantum well (QW) by using the Lee–Low–Pines variational method. We find that the exciton state modification caused by the exciton–phonon interactions is remarkable. The exciton energy shift due to exciton–phonon interactions increases monotonically if the well width increases. With increasing the In fraction, the exciton energy shift firstly increases to a maximum, then decreases. The BEF has a significant influence on the exciton states in a QW with large well width. The physical reasons have been analyzed in detail. Good agreement for the zero-phonon peak energies and the Huang–Rhys factor has been obtained between our numerical results and the corresponding experimental measurements.     

Confinement in self-assembled InAs/InP quantum wires studied by magneto-photoluminescence

We studied two InAs/InP quantum wire samples with different growth conditions. The photoluminescence of the first sample reveals up to six distinct peaks, while the second has only two pronounced photoluminescence peaks that are attributed to flat wires with heights that differ by exactly one monolayer. Despite the large band offsets in this system, the photoluminescence energy shift of these peaks with a magnetic field applied in the plane of the wires shows that the extent of the exciton wave function in the growth direction is much larger than the wire height, i.e. the wave function spills over into the InP. Moreover, the exciton wave function shrinks for increasing wire height. The wave function spill-over is qualitatively confirmed in the first quantum wire sample.     

Modeling of Coulomb interaction in parabolic quantum wires

We study the exciton states in a parabolic quantum wire. An exactly solvable model is introduced for calculating the exciton state and the binding energy as a function of the radius of the quantum wire within the envelope-function approximation. In the calculation, we replace the actual Coulomb interaction between the electron and the hole by a Gaussian nonlocal separable potential and obtain closed expressions for both the envelope-function and the binding energy. Results are compared with those obtained by perturbative methods.     

Excitonic optical absorption in wurtzite InGaN/GaN quantum wells

Within the framework of the effective-mass and envelope function theory, exciton states and optical properties in wurtzite (WZ) InGaN/GaN quantum wells (QWs) are investigated theoretically considering the built-in electric field effects. Numerical results show that the built-in electric field, well width and in composition have obvious influences on exciton states and optical properties in WZ InGaN/GaN QWs. The built-in electric field caused by polarizations leads to a remarkable reduction of the ground-state exciton binding energy, the interband transition energy and the integrated absorption probability in WZ InGaN/GaN QWs with any well width and In composition. In particular, the integrated absorption probability is zero in WZ InGaN/GaN QWs with any In composition and well width L > 4 nm. In addition, the competition effects between quantum confinement and the built-in electric field (between quantum size and the built-in electric field) on exciton states and optical properties have also been investigated.     

Exciton binding energy in a pyramidal quantum dot

The effects of spatially dependent effective mass, non-parabolicity of the conduction band and dielectric screening function on exciton binding energy in a pyramid-shaped quantum dot of GaAs have been investigated by variational method as a function of base width of the pyramid. We have assumed that the pyramid has a square base with area \(a\times a\) and height of the pyramid \(H=a/2\). The trial wave function of the exciton has been chosen according to the even mirror boundary condition, i.e. the wave function of the exciton at the boundary could be non-zero. The results show that (i) the non-parabolicity of the conduction band affects the light hole (lh) and heavy hole (hh) excitons to be more bound than that with parabolicity of the conduction band, (ii) the dielectric screening function (DSF) affects the lh and hh excitons to be more bound than that without the DSF and (iii) the spatially dependent effective mass (SDEM) affects the lh and hh excitons to be less bound than that without the SDEM. The combined effects of DSF and SDEM on exciton binding energy have also been calculated. The results are compared with those available in the literature.     

Stress effects on the photoluminescence energies and binding energies of excitons in ultra-thin ZnTe/CdTe/ZnTe quantum wells

Using the variational method and the effective mass and parabolic band approximations, electron and heavy-hole ground-state energies and exciton and photoluminescence energies are calculated in ultra-thin quantum wells of CdTe/ZnTe heterostructures. The results indicate dependencies on the well width, the barrier height, and stress-related effects and occur because the wave functions of both free carriers and those bound in exciton form determine the system energy and are shaped by the geometry of the well. Critical system thicknesses were estimated for the point at which stress effects become negligible: a value of five monolayers was obtained based on the exciton binding energy, and a value of seven monolayers was obtained based on the free-carrier ground-state energy.     

Transformation of the dimensionality of excitonic states in quantum wells with asymmetric barriers in an electric field

A transformation of the dimensionality of excitonic states from 2D to 3D with increasing external electric field is observed in single GaAs/Al_xGa_1−x As quantum-well structures with asymmetric barriers. The binding energy of a 2D exciton remains constant over a wide range of variation of the field, since the decrease in the binding energy is compensated by increasingly larger penetration of the electronic wave function into the barrier layer, where the exciton binding energy is higher because the effective mass is larger and the dielectric constant of AlGaAs is lower than that of GaAs. When the maximum of the electron wave function is displaced into the barrier as the field increases, the exciton binding energy decreases. As the field increases further, a 2D exciton transforms into a quasi-3D exciton, with a heavy hole in the quantum well and an electron in a resonant above-barrier state. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 207–211 (10 February 1998)     

Excitons in quantum well wires: V-shaped wire,T-shaped wire and strain-induced lateral confinement

Il Nuovo Cimento D - We calculated the energy and the wave function of the exciton for i) a V-shaped quantum wire, ii) a T-shaped quantum wire and iii) a quantum wire resulting from strain-induced...     

非对称方势阱中的激子及其与声子的相互作用

采用类LLP(Lee-Low-Pines)变换和分数维变分法,在讨论有限深非对称方势阱Ga_1－xAl_xAs/ GaAs/Ga_0.7Al_0.3As的分数维基础上,计算了其中激子的基态能量以及声子对其影响,随着势阱宽度增加,激子能量先减小后增大,出现一个最小值.讨论了一侧势垒高度变化对分数维、激子基态能量的影响,并发现声子作用使得激子能量明显增大.另外,非对称方势阱中的激子结合能随阱宽的减小而增