The physics of space charge instabilities and temporal chaos in extrinsic photoconductors

This paper reviews experimental and theoretical work carried out on space charge instabilities and temporal chaotic behavior in cooled extrinsic p-type Germanium photoconductors. Measured dc current-voltage (I–V) characteristics of these devices are strongly nonlinear for moderate electric fields 0.1 V/cm due to field dependence of the rates of free hole capture and impurity impact ionization. Below the threshold field for impurity breakdown, Ge samples behave like damped nonlinear oscillators, exhibiting characteristic chaotic response when driven by a time-periodic voltage. Above impurity breakdown, we observe voltage-controlled negative differential resistance (NDR) in the I–V curves accompanied by spontaneous current oscillations due to moving space charge domains with velocities 10³ to 10⁴ cm/s. Measurements are well explained by a simple rate equation model in which negative differential behavior in the impact ionization rate plays a crucial role. Related work on semiconductor chaos and possible future directions for research are also mentioned.     

Mode polarization of a single mode gas laser in transverse magnetic fields

The polarizing effect of transverse dc magnetic fields applied to fractions of an isotropic single mode gas laser is theoretically investigated. A method is proposed to obtain prescribed orientations of the polarization plane in relatively weak external fields (He-Ne, 1.153 μ: about 3x10^-3 Wb/m²).     

丝电爆过程的电流导入机理

丝电爆制备纳米粉时, 电流从电极导入金属丝的过程直接影响电极烧损和粉末中微米级大颗粒产生. 分别通过接触和气体放电两种方式导入电流进行电爆试验. 结果表明, 光测量装置检测到的丝端部光电流几乎与回路放电电流同时产生, 而中间位置的光电流则要滞后一段时间; 由探针收集的产物确定, 金属丝端部主要形成熔融粒子, 中间部分主要形成气相粒子. 分析可知, 接触方式导入电流时, 丝端部也存在气体放电现象, 大电流主要通过气体放电形成的等离子体导入. 等离子体对电流的旁路作用会阻碍能量向金属丝沉积, 这是产生微米级大颗粒和"积瘤"主要原因. 通过气体放电方式导入电流时, 电极烧损明显减轻, 并可以避免"积瘤"产生.     

Dc breakdown of low pressure gas in long tubes

The gas breakdown was experimentally investigated in dc electrical field in long discharge tubes. The measurements were performed in the tube of radius R=4 mm, whereas the inter-electrode gap values varied in the range L=2-230 mm. The conventional Paschen law was shown to hold in short discharge tubes for which L/R?1. At L/R>1 the breakdown curves Udc(p) are shifted not only to lower pressure p values but also to higher dc voltage Udc values with the gap value increasing, i.e., one must employ the modified law of gas breakdown Udc(pL,L/R). However in long tubes the breakdown curve pattern experiences qualitative changes. At L/R>20 increasing L makes the dc breakdown curves to shift to higher Udc values, their minima being observed almost at the same gas pressure value. That is, for small gaps with increasing distance between the electrodes, the breakdown curves shift to the left on the scale of the gas pressure at a constant voltage at the minimum, and for long tubes with increasing distance between the electrodes, the breakdown curves shift upward on the scale of the voltage with the same gas pressure at the minimum. Theoretical treatment reveals that for gas breakdown in a long tube the rates of ionization via electron impact and diffusion loss to the tube wall must be equal.     

Temperature dependent characteristics of a PIN avalanche photodiode (APD) in Ge,Si and GaAs

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs PIN avalanche photodiodes. The temperature coefficient of avalanche breakdown voltage in a high field region is studied. Finally the response time of a PIN APD in these materials is discussed.This paper is supported by the National Science Council, the Republic of China.     

High performance uncooled InAsSbP/InGaAs photodiodes for the 1.8–3.4 μm wavelength range

Room temperature In_0.97Ga_0.03As photodiodes with an InAs_0.36Sb_0.20P_0.44 transparent window layer operating in the mid-infrared region over the wavelength range 1.8–3.4 μm are reported. The InAs_0.36Sb_0.20P_0.44/In_0.97Ga_0.03As heterojunction photodiodes were grown on p-type (100) InAs substrates by liquid phase epitaxy (LPE). Basic detector characteristics have been measured and compared with other detectors in this wavelength range. The typical detectivity of the photodiodes is 1.2 × 10¹⁰ cm Hz^1/2/W at room temperature, which compares very favourably with that of TE cooled HgCdTe and is at least three times that of cooled PbSe photoconductors. The InAs_0.36Sb_0.20P_0.44/In_0.97Ga_0.03As heterojunction photodiodes offer the advantage of increased sensitivity and extended wavelength response at room temperature compared with that of currently available commercial photodetectors, making them an attractive alternative for a number of mid-infrared applications including optical gas sensors and infrared spectrometers.     

Free‐Electron Gas Spectrum Uniqueness in the Mixture of Noble Gases

Gas mixtures can reach the Maxwell's specter shape in case of low‐ionized mono‐atomic mixtures in the weak electric field. The parameters pertaining to the Maxwell spectrum of free electrons' gas straightforwardly settle on the insulating characteristics of the examined gas mixture at the fundamental level. In this paper, a condition for breakdown has been accomplished taking as a starting point the ionization coefficients derived accordingly, as well as the conditions for breakdown in keeping with the Townsend mechanism. The dc breakdown voltage value of noble gases mixture has been measured in the experimental part of the paper. The hypothesis that the free‐electron gas spectrum is unique in the noble gas mixture and is of Maxwell's type has been verified. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Similarity law for a homogeneous discharge in the presence of a strong field and analogues of the Stoletov constant for the pulsed regime

It is demonstrated that the similarity relationships (breakdown curves), which establish a dependence of the field strength divided by the pressure on the product of the pressure and the delay time of the breakdown, are realized upon the uniform breakdown of the gas gap in the presence of both rectangular and triangular voltage pulses, which is interesting for the physics of gas and plasma discharges, and remain valid for strong fields. The breakdown criterion is described with a two-valued curve such that the effective multiplication of electrons in gas becomes possible in the presence of both weak and strong fields and at small products of the pressure and the pulse time. An analogue of the Stoletov effect, which corresponds to a maximum in the current with respect to pressure at a given voltage pulse, is demonstrated for the pulsed discharge. The analogues of the Stoletov constant are calculated for non-self-sustained pulsed discharges in various gases. The minimum delay time of the breakdown is also determined by these constants.     

高速光探测器封装的优化设计

提出了一种高速光探测器封装优化设计的新方法。首先用矢量网络分析仪对封装寄生参量和探测器芯片进行准确测量,研究了探测芯片的本征参量与封装寄生参量之间的谐振现象,然后合理利用这种谐振效应对芯片的频率响应特性进行有效补偿。理论分析和实验结果都证明优化封装后器件的频率响应带宽超过了芯片的响应带宽。该方法不需要另加其它元件．而仅仅利用光电器件封装过程中必不可少的金丝所带来的寄生电感,就达到了改善器件频率响应特性的目的。     

A modified Paschen law for the initiation of a dc glow discharge in inert gases

Breakdown of inert gases in a homogeneous dc electric field is studied experimentally and theoretically at various distances L between the electrodes and radii R of the discharge tubes. It is shown that, for arbitrary geometric dimensions of the discharge chamber and cathode materials, the ratio of the breakdown electric field strength to the gas pressure holds constant at the breakdown curve minimum. A modified Paschen law is obtained, according to which the breakdown voltage is a function of both the product of the gas pressure by the distance L and the ratio L/R.     

Temperature-dependent characteristics of a reach-through avalanche photodiode (RAPD) in Ge,Si and GaAs

A theoretical assessment is presented based on a modification of Baraff's theory in order to compare the temperature dependence of several characteristics, including breakdown voltage, excess noise factor, effective ionization rate ratio and efficiency in Ge, Si and GaAs reach-through avalanche photodiodes (RAPD). The temperature coefficient of avalanche breakdown voltage in a depletion region is studied. The response time of a reach-through APD in these materials is also discussed. Finally a comparison of the characteristics between PIN APD and RAPD is presented. The theoretical data have also been substantiated experimentally by Kanedaet al. Supported by National Science Council, the Republic of China     

波导等离子体限幅器中气体的选择与触发条件计算

 为保护电子设备不受高功率微波损坏,在矩形波导中嵌入等离子体限幅器。计算了不同气体的微波击穿场强随气体压强以及微波频率的变化规律。在高气压条件下（1 333~133 320 Pa）,气体击穿场强随气压增大而增大,在计算的4种气体中Ne的击穿场强最小;低气压条件下（1.333 2~133.32 Pa）,气体击穿场强随气压增大而减小,且Xe具有最小击穿场强。高气压条件下气体的击穿场强明显高于低气压下的击穿场强。计算结果表明：当填充133.32 Pa的Xe时,限幅器能够在约30 km范围内,有效地防护10 GW级高功率微波对电子设备的损坏。     

Factors affecting and methods of improving the pulse repetitionfrequency of pulse-charged and DC-charged high-pressure gasswitches

The results of this paper describe some of the factors which affect the repetitive operation of high-pressure gas switches (spark gaps) for both pulse-charged and DC-charged operation. Also discussed are methods which may be employed to improve the pulse repetition frequency (PRF) of spark gaps operating under such conditions. Under pulse-charged conditions, the voltage recovery process of the spark gap has been shown to be restricted following partial density recovery by the residual ion population. This restriction may be minimized by applying a suitable bias voltage across the gap to remove the ion influence. It is also possible to manipulate the voltage-pressure (V-p) breakdown characteristic of a spark gap in order to improve the rate of rise of recovery voltage by reducing the recovery voltage dependence upon gas pressure. The combination of these effects has been shown to reduce the voltage recovery time of pulse-charged spark gaps from several hundred milliseconds to several milliseconds. Under DC-charged conditions, where no “dead time” is available for voltage recovery, it is possible to employ corona discharge effects, which occur in highly nonuniform fields, to stabilize and control the breakdown process. The use of corona stabilization has enabled the operation of a self-closing spark gap at a PRF of more than 5 kHz, without employing gas flow techniques. A triggered version of a corona-stabilized spark gap has also been developed which has demonstrated single run capabilities of 10⁷ (4 h continuous operation at 700 pps) and a lifetime of ~10 shots (maintenance free, sealed switch). The triggered corona switch has also demonstrated controlled switching up to a PRF of 1.2 kHz     

Spark Breakdown - An Electrostatic Criterion

This paper examines one basic process causing the d. c. high voltage breakdown of a gas. Specifically, it contains a modified criterion for the transition of a Townsend Avalanche to a Streamer Discharge. Instead of the assumption that the electrons in the avalanche are spread laterally by multiple scattering on gas molecules (thermal diffusion), the assumption used is that the electrons are spread solely by mutual electrostatic repulsion. A criterion is found that yields quantitative results comparable to those obtained using the "multiple scattering" assumption. This modified criterion is probably most useful where "multiple scattering" is improbable - where an electron loses almost all of its energy on colliding with complex gas molecules. In addition, the classical (thermal-diffusion-dominated) breakdown criterion is re-derived in a much simpler form.     

Multiple breakdown in helium generated by hybrid 10 μm Co2 laser pulses

In this paper we describe the experimental investigation of the post-breakdown development of a helium plasma generated by a hybrid 10 m CO₂ laser pulse. As a result we found that a long tail and a high energy of the CO₂ laser pulse cause multiple successive breakdown in the gas. We have measured the time to the first breakdown and the time between first and second breakdown as functions of gas pressure and laser pulse peak intensity as well as the spatial intensity distribution of the transmitted laser pulse. Among the relevant mechanisms self-focusing is not observed before the second breakdown.     

Theoretical study of back-illuminated separated absorption and multiplication AlGaN APDs with different structural parameters

The low Al-content p-type layer was designed to utilize the polarization field to improve the performance of back-illuminated separated absorption and multiplication AlGaN avalanche photodiodes. The results show that the avalanche breakdown voltage decreases significantly when the polarization field has the same direction as reverse bias field in the multiplication region, and the maximum gain increasing as much as 235% is achieved. Moreover, the effects of both the doping concentration and thickness of each layer on the performance of device are investigated systematically. It is demonstrated that the parameters in inset n₁ layer play an important role on the properties of the device. Finally, the influences of density and distribution of defects on the breakdown voltage and gain are analyzed.     

A rapid synthesis/growth process producing massive ZnO nanowires for humidity and gas sensing

We report a rapid and simple process to massively synthesize/grow ZnO nanowires capable of manufacturing massive humidity/gas sensors. The process utilizing a chemical solution deposition with an annealing process (heating in vacuum without gas) is capable of producing ZnO nanowires within an hour. Through depositing the ZnO nanowires on the top of a Pt-interdigitated-electrode/SiO₂/Si-Wafer, a humidity/gas-hybrid sensor is fabricated. The humidity sensitivity (i.e., ratio of the electrical resistance of the sensor at 11–95 % relative humidity level) is approximately 10⁴. The response and recovery time with the humidity changing from 11 to 95 % directly and reversely is 6 and 10 s, respectively. The gas sensitivity (i.e., ratio of electrical resistance of the sensor under the air to vaporized ethanol) is increased from 2 to 56 when the concentration of the ethanol is increased from 40 to 600 ppm. Both the response and recovery times are less than 15 s for the gas sensor. These results show the sensor utilizing the nanowires exhibits excellent humidity and gas sensing.     

Properties of Hg implanted Hg1−x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1?x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W^?1, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W^?1 were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W^?1 at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance.     

Reverse current reduction of Ge photodiodes on Si without post-growth annealing Invited Paper

A new approach to reduce the reverse current of Ge pin photodiodes on Si is presented, in which an i-Si layer is inserted between Ge and top Si layers to reduce the electric field in the Ge layer. Without post- growth annealing, the reverse current density is reduced to ～10 mA/cm2 at -1 V, i.e., over one order of magnitude lower than that of the reference photodiode without i-Si layer. However, the responsivity of the photodiodes is not severely compromised. This lowered-reverse-current is explained by band-pinning at the i-Si/i-Ge interface. Barrier lowering mechanism induced by E-field is also discussed. The presented "non-thermal" approach to reduce reverse current should accelerate electronics-photonics convergence by using Ge on the Si complementary metal oxide semiconductor (CMOS) platform.