Experimental Study on One-mirror-inclined Three-mirror-cavity Photodetectors

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背照射和正照射p-i-n结构GaN紫外探测器的i-GaN和p-GaN厚度设计

研究了i-GaN和p-GaN厚度对背照射和正照射p-i-n结构GaN紫外探测器响应光谱的影响。模拟计算发现:对于背照射结构, 适当地减小i-GaN厚度有利于提高探测器的响应, 降低i-GaN层的本底载流子浓度也有利于提高探测器的响应;p-GaN的欧姆接触特性好坏对探测器的响应影响不大, 适当地增加p-GaN厚度可以改善探测器性能。而正照射结构则不同, i-GaN厚度对探测器的响应度影响不大, 但欧姆接触特性差将严重降低探测器的响应, 适当地减小p-GaN厚度可以大幅度改善探测器的响应特性。能带结构和入射光吸收的差别导致了正照射和背照射探测器结构中i层和p层厚度的选择和设计不同。     

Ultranarrow band and high-quantum-efficiency photodetector with waveguide-grating structure and inclined top mirror

A new type of one-mirror inclined waveguide-grating photodetector, which combines a waveguide-grating filter and an inclined top mirror is proposed. Greatly improved spectral response is achieved by the integration of waveguide-grating into classical thin-film homogeneous layers. Comparison between the grating filter and Fabry-Perot filter demonstrates that this structure has two advantages over other photodetector devices. First, the inclined mirror can decouple the quantum efficiency from response speed and spectral response linewidth. Second, comparing the traditional photodetector with Fabry-Perot filter, this type of photodetector with the same materials requires significantly fewer layers while maintaining the same linewidth response, high peak efficiency and remarkably low sideband reflectivity. Thus, this type of photodetector device represents basic new optical features with a significant potential for practical applications.     

4.4 μm中红外激光外差光谱探测技术研究

在国内首次报道以窄线宽的4.4 μm外腔量子级联激光(QCL)作为本地振荡光源,黑体作为辐射光源的激光外差光谱实验装置的建立和测量工作。激光外差光谱是一种高灵敏度的光谱探测技术,并可以用于发展一种小型的光谱探测系统,进行地基或星载的地球大气或天文观测。介绍了激光外差的基本理论、装置的建立和实验测量工作。此激光外差光谱实验装置采用4.4 μm外腔量子级联激光,出光功率高达180 mW,在4.38～4.52 μm间连续可调,具有很宽的光谱调谐范围,能实现CO₂,CO和N₂O等大气重要分子的同时测量。通过开展不同压力下CO₂气体的激光外差光谱测量,对激光外差光谱实验装置的性能进行了评估。目前该激光外差系统的信噪比达到86,低于散粒噪声极限条件的理论计算值287,系统的光谱分辨率约为0.007 8 cm-1,能满足较窄线宽条件下的高分辨率激光外差光谱的测量。分析结果表明,中红外激光外差光谱系统具有很高的瞬态信噪比及光谱分辨率,在高精度测量大气温室气体的柱浓度和温室气体垂直廓线分布方面具有广阔的应用前景。     

Resonant cavity enhanced (RCE) photodetectors with flat-top and steep-edge spectral response

Flat-top and steep-edge spectral response of photodetectors is important for dense wavelength-division-multiplexed system. Realization of the flat-top and steep-edge response is very challenging. In the last two decades many methods have been proposed, but the spectral response linewidth is not acceptable to wavelength-division-multiplexes system. In this paper a novel RCE photodetector with flat-top and steep-edge spectral response is presented. Using the step shaped structure, designing multiple-step-type p-type In_0.67Ga_0.33As_0.7P_0.3 contact layer and adjusting the thickness of the absorption layer, a design with good flat-top performance is demonstrated such that the quantum efficiency is 51.161% in the flat-top passband, 0.5 and 3 dB bandwidths are 0.26 and 0.4 nm, respectively.     

三种半导体阵列光谱组束结构的输出特性

基于光谱光束组合技术,利用光栅的衍射和外腔的反馈,并通过加入光束整形系统,将标准的半导体激光阵列的发光单元锁定在窄线宽的不同波长上,以近似平行光束沿组合方向输出,以实现半导体激光阵列输出光束质量的改善和线宽的压窄。实验中采用发光单元宽度100μm,周期500μm,由19个单元构成的标准阵列,分别对快、慢轴准直后光谱组束、光束整形后光谱组束和线宽压窄外腔组束进行了实验验证,实现了组合光束与单个发光单元近似的光束质量,同时得到了较窄的线宽输出,并对实验结果进行了分析。     

Cavity phase matching via an optical parametric oscillator consisting of a dielectric nonlinear crystal sheet

We experimentally demonstrate cavity phase matching for the first time using a sheet optical parametric oscillator which is made of an x-cut KTiOPO(4) crystal sheet. This microcavity presents 220 kW peak power capability for near-frequency-degenerate parametric outputs with up to 23.8% slope efficiency. It also features unique spectral characteristics such as single-longitudinal-mode and narrow linewidth. These attractive properties predict broad applications of such a mini-device, such as terahertz generation, photonic integration, spectroscopy, and quantum information, etc.     

Terahertz quantum well infrared detectors

We report on recent measurements on GaAs/AlGaAs THz quantum well infrared photodetectors (QWIPs), investigating linewidth broadening as function of doping level. Structures with 3% and 2% Al content in the barrier were grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD), respectively. Linewidth widening with increasing doping of the GaAs quantum well could be observed in the detection spectra. The observed shift of peak detection wavelength for different well dopings fits with values obtained from wavefunction calculations, taking into account many-particle effects, namely exchange and correlation energies and the effect of depolarization on the absorption. In addition, activation energies extracted from dark current measurements as function of device temperature are also in agreement with the calculations.     

硅基1.55 μm可调谐共振腔窄带光电探测器的研究

制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44％,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.     

Contrast ratio and hysteresis width of optical bistability in quantum-dot vertical-cavity semiconductor optical amplifiers integrated with MEMS membrane

The characteristics of optical bistability in quantum dot vertical cavity semiconductor optical amplifier integrated with MEMS membrane have been investigated, and a closed-form model is derived taking into account the effect of the quantum dot discrete states and the membrane deflection and reflectivity. We show that small membrane deflection significantly adjusts the resonant wavelength, the contrast ratios and the hysteresis width. The shape of the input–output characteristics of the device can be adjusted to display clockwise, butterfly and counterclockwise hysteresis loops depending on the membrane deflection and the initial wavelength detuning. Our analysis reveals that the contrast ratios of the upper and lower bistable levels are totally different. Also, it has been shown that the characteristics of the bistability are strong function of the active layer linewidth enhancement factor and the membrane reflectivity.     

1.55-mum and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

We have investigated the spectral responsivity of porous silicon Schottky barrier photodetectors in the wavelength range 0.4-1.7 mum . The photodetectors show strong photoresponsivity in both the visible and the infrared bands, especially at 1.55 mum . The photocurrent can reach 1.8 mA at a reverse bias of 6 V under illumination by a 1.55-mum , 10-mW laser diode. The corresponding quantum efficiency is 14.4%.     

Ge/Si photodetectors and group IV alloy based photodetector materials

Photodetectors using Si, Ge and their alloys with other group IV elements are of current interest for application in telecommunication as well as in optical interconnects. We have presented in this paper our work on resonant cavity enhanced Si/SiGe multiple Quantum Well and Ge Schottky photodetectors. Calculated values of external quantum efficiency for GeSiC based photodetectors are also reported. Tensile strained Ge layers grown with suitable barriers show direct gap type I band alignment. Predicted performance of photodetectors using strong Quantum Confined Stark Effect and Franz-Keldysh Effect in these structures and properties related to photodetection using these new materials are also described.     

Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors with bandpass guided‐mode resonance filters

Quantum dot infrared photodetectors can be coupled with micro‐structured filters to create narrowband sensors. Guided‐mode resonance filters based on a high‐index dielectric slab can exhibit bandpass characteristics that are suitable for monolithic integration with focal‐plane arrays. Here, patterned Ge filters were integrated with InGaAs/GaAs quantum dot detectors to linearly tune their 77 K photoresponse peaks from 5.6 µm to 6.2 µm. The dark current was not influenced by these filters but the ability to narrow the photoresponse linewidth was limited by substrate scattering, which is often encountered with front‐side illumination architectures. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

双后向结构的线宽拓展L波段超荧光光源

报道了采用两级级联双后向抽运的光源结构,实现高效率和线宽拓展的L波段掺铒光纤超荧光光源.通过数值模拟,研究了两级光纤长度分配和抽运功率比例对光源输出特性的影响.模拟表明,该结构可获得线宽拓展的平坦L波段光谱,相比常规L波段光谱线宽拓展了15 nm,达近60 nm.此外,抽运功率比例为1∶1时该结构的抽运转换效率最高.利...     

A novel Si-based photodetector with flat-top and steep-edge spectral response

To meet the requirement of the dense wavelength-division-multiplexed (DWDM) system and optoelectronic integrated circuit, we design a Si-Based InGaAs photodetector, which is fabricated by bonding InGaAs/InP photodetector on a Si-Based dielectric film Fabry–Perot filter. The photodetector can exhibit an extremely good flat-top and steep-edge spectral response through designing the structure of Si-Based dielectric film Fabry–Perot filter. The simulation result of phtodetector demonstrates that the spectral response linewidth, ?at-top and steep-edge characteristics of these photodetectors are suitable to be used in 50 GHz, 100 GHz, 200 GHz DWDM system.     

Improved optical coupling in waveguide photodetectors incorporating a wedge-shaped input facet

A simple method for improving the input coupling in uncleaved waveguide photodetectors is demonstrated. A wedge-shaped recess is incorporated into the input facet to reduce reflection. Over a range of device sizes and wedge shapes, mean quantum efficiency was increased by 16% relative to flat, uncleaved input facets.     

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm2 only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.     

Generation of narrow-band photon pairs for quantum memory

We demonstrate a narrow-band photon pair source on a rubidium (Rb) D₂ line (780 nm) using a periodical poled KTiOPO₄ crystal via a degenerate optical parametric oscillator far below threshold. The single longitudinal mode is selected by a spectral filtering cavity. The measured cross correlation between two photons shows that the generated photon has a linewidth of 21 MHz, which is comparable to the typical linewidth of an atomic-based quantum memory. The detected photon pair rate is about 2.7/s/MHz/mW. This system could be utilized for many applications in quantum information field, such as the storage and retrieval of a photon in Rb atomic ensemble and so on.     

95 GHz millimeter wave signal generation using an arrayed waveguide grating dual wavelength semiconductor laser

We report the generation of a 95?GHz carrier frequency by optical heterodyning of two wavelengths from adjacent channels from an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure of the device provides low phase noise and narrow optical linewidth, further enhanced by the intracavity filter effect of the arrayed waveguide grating. We demonstrate that the generated RF beat note, at 95?GHz, has a -3 dB linewidth of 250?kHz. To the best of our knowledge, this is the narrowest RF linewidth generated from a free-running dual-wavelength semiconductor laser. The device is realized as a photonic integrated circuit using active-passive integration technology, and fabricated on a multiproject wafer run, constituting a novel approach for a compact, low-cost dual-wavelength heterodyne source.     

Optical and photoluminescent properties of nanomaterials based on cadmium sulfide nanoparticles and polyethylene

The spectral characteristics of absorption and photoluminescence of synthetic composite materials based on cadmium sulfide nanoparticles and polyethylene are studied in the visible and near-IR wavelength ranges. It is shown that the quantum efficiency of a material with CdS nanoparticles about 6 nm in size in a matrix of high-pressure polyethylene is the highest. The estimation of the photoluminescence linewidth shows that the linewidth of this material is the smallest, amounting to 0.55 eV, which indicates that the structure of these nanoparticles is more perfect.