Radiation-stimulated processes in irradiated hexagonal TlInS<Subscript>2</Subscript> crystals

The anisotropy of electrical conductivity in hexagonal TlInS₂ crystals irradiated by γ-quanta is investigated. It is established that irradiation by low doses (~50 krad) gives rise to accumulation of radiation defects both in the tetrahedral space and in the layer plane. As a result, there is an increase in electrical conductivities σ_⊥C and σ_∥C. As the dose is increased (above 200 krad), more complex defects are formed due to interaction of the radiation defects with the inhomogeneities, thus reducing the increase of electrical conductivity in both directions.     

Luminescence and electronic excitations in crystals K<Subscript>2</Subscript>Al<Subscript>2</Subscript>B<Subscript>2</Subscript>O<Subscript>7</Subscript> with defects

This paper reports on the results of the comprehensive study of the dynamics of electronic excitations in K₂Al₂B₂O₇ (KABO) crystals, obtained by low-temperature luminescence vacuum ultraviolet spectroscopy with nanosecond time resolution upon photoexcitation by synchrotron radiation. For the first time, the data have been obtained on the photoluminescence (PL) decay kinetics, PL spectra with time resolution, PL excitation spectra with time resolution, and reflection spectra at 7 K; the intrinsic nature of PL at 3.28 eV has been established; luminescence bands of defects have been separated in the visible and ultraviolet spectral regions; an intense long-wavelength PL band has been detected at 1.72 eV; channels of the formation and decay of electronic excitations in K₂Al₂B₂O₇ crystals have been discussed.     

Ion conduction and space-charge polarization processes in Li<Subscript>2</Subscript>Ge<Subscript>7</Subscript>O<Subscript>15</Subscript> crystals

The electrical properties of a lithium heptagermanate (Li₂Ge₇O₁₅) crystal have been studied in DC and AC measuring fields at temperatures from 500 to 700 K. In a DC field, a substantial decrease of electrical conductivity σ with time has been detected. On the basis of kinetic dependences σ(t), estimates of the charge carrier diffusion coefficient D have been obtained. In the frequency range 10¹–10⁵ Hz, the spectra of complex impedance ρ*(f) have been measured. The analysis of diagrams in the complex plane (ρ″–ρ′) has been performed within the equivalent circuit approach. It has been shown that, in the considered temperature and frequency intervals, the electrical properties of Li₂Ge₇O₁₅ crystals have been determined by the hopping conduction of interstitial lithium ions A _Li and accumulation of charge carriers near the blocking Pt electrodes.     

Increase in individual absorption bands of MgF<Subscript>2</Subscript> under electron irradiation

Decomposition of the induced absorption spectra of a MgF₂ crystal into individual bands made it possible to construct the dependences of their intensity, and hence, the intrinsic defect concentration, on the electron beam fluence (energy density). The features of these dependences and their possible consequences are analyzed.     

Luminescent and photochemical processes in CdBr<Subscript>2</Subscript> : AgCl crystals

This paper reports on the results of the investigation into the optical luminescence properties of photochromic crystals CdBr₂ : AgCl grown by the Bridgman-Stockbarger method. It has been shown that, under X-ray, optical, and N₂-laser excitations of the grown crystals, there occurs emission due to Ag⁺ impurities in addition to emission from centers characteristic of CdBr₂. The photostimulated chemical reactions occurring in CdBr₂ : AgCl lead to a weakening of the luminescence and to a change in its spectral composition. Models of photosensitive centers and centers of photochemical coloring have been proposed. The mechanisms of the photochromic effect have been considered. The nature of luminescent and trapping centers has been discussed.     

Structural transformations of K<Subscript>3</Subscript>H(SO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystals with variations in temperature

Single crystals of the K₃H(SO₄)₂ compound are investigated using X-ray diffraction on Xcalibur S and Bruker diffractometers. The structure of the low-temperature monoclinic phase is refined (space group C2/c, z = 4, a = 14.698(1) Å, b = 5.683(1) Å, c = 9.783(1) Å, β = 103.01(1)°, T = 293 K, Bruker diffractometer), the structural phase transition is revealed, and the structure of the high-temperature trigonal phase is determined (space group R \(\bar 3\) m, z = 3, a = 5.73(1) Å,c = 21.51(1) Å,T = 458 K, Xcalibur diffractometer).     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Magnetic properties of Pb<Subscript>2</Subscript>Fe<Subscript>2</Subscript>Ge<Subscript>2</Subscript>O<Subscript>9</Subscript> single crystals

Single crystals of Pb₂Fe₂Ge₂O₉ have been grown. They were subjected to X-ray diffraction, magnetic, neutron diffraction, Mössbauer and spin resonance studies. It has been established that Pb₂Fe₂Ge₂O₉ is a weak ferromagnet with a Néel temperature T _N = 46 K, and the exchange and spin-flop transition fields have been estimated. It has been demonstrated that the weak ferromagnetic moment is actually the result of the single-ion anisotropy axes for the magnetic moments of different magnetic sublattices being not collinear.     

Evolution of MgAl<Subscript>2</Subscript>O<Subscript>4</Subscript> crystals in Al-Mg-SiO<Subscript>2</Subscript> composites

The present study analyzes the morphological transformations of reaction products i.e., MgO, MgAl₂O₄ occurring during the reaction between SiO₂ and Al-Mg alloy in Al-Mg-SiO₂ composite processed by the liquid metallurgy technique. Different phases of platelet and hexagonal morphologies are detected and their composition analysis by EDS has confirmed them as being transition phases existing between MgO, MgAl₂O₄ and Al₂O₃. This study has also revealed the gradual transformation of (i) MgO needles to octahedral MgAl₂O₄ through Mg-Al-Si-O and Mg-Al-O transition phases having platelet morphologies and (ii) MgAl₂O₄ to Al₂O₃ through hexagonal transition phases on holding of Al-5Mg-SiO₂ and Al-1Mg-SiO₂ composites respectively at 1023K. Fully developed α-Al₂O₃ crystals are not observed under the present experimental conditions, wherein the Mg content is well above the equilibrium Mg content required for the formation of stable Al₂O₃ (<0.05 wt. %). PACS 05.70.Np     

Low-frequency relaxation processes in Pb<Subscript>5</Subscript>Ge<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric crystals

Measurements and analysis of the temperature and frequency dependences of permittivity and losses and of the electrical resistivity of Pb₅Ge₃O₁₁ ferroelectric crystals at temperatures of 100 to 600 K and frequencies of 0.1 to 100 kHz are reported. The dielectric characteristics of the crystals exhibit, in addition to clearly pronounced anomalies near the Curie point T_C=450 K, less distinct anomalous features of the relaxation character in the range 230–260 K. The data obtained on the effect of various factors (degree of crystal polarization, crystal annealing at different temperatures and in different environments, etc.) on the low-temperature anomalies serve as a basis for discussing the possible mechanisms responsible for these anomalies. It is concluded that the low-temperature dielectric anomalies originate from thermal carrier localization in defect levels in the band gap, which entail the formation of local polarized states.     

Amplitude gratings generation by selective defect bleaching in KCl:CO<Subscript>3</Subscript>K<Subscript>2</Subscript> crystals

Volume grating formation by spatially-selective defect bleaching is demonstrated in coloured KCl:CO₃K₂ crystals. The sample is coloured by a train of pulses with a wavelength of λ= 266 nm and bleached with a cw Ar-laser with a wavelength of λ= 514.5 nm. Diffraction efficiency for a 1.6 μm grating period is studied both experimentally and theoretically, using the evolution of colour centre concentration. Hologram recording parameters are obtained and the evolution of the spatial grating profile is discussed. Diffraction efficiencies three times higher than previously published efficiencies are obtained. PACS 42.40.Ht; 42.40.Lx; 42.70.Ln     

Effect of uniaxial pressure on the infrared spectra of (NH<Subscript>4</Subscript>)<Subscript>2</Subscript>SO<Subscript>4</Subscript> crystals

The infrared reflectance spectra of a mechanically free or uniaxial-pressure-confined (NH₄)₂SO₄ crystal were studied for the first time in the spectral range 800–1700 cm^?1 in three crystallographic directions. Using the Kramers-Kronig relations, the dispersion and pressure dependences of the following quantities are obtained: the index of refraction n, the real (?₁) and imaginary (?₂) parts of the permittivity, the frequencies of longitudinal (ω_LO) and transverse (ω_TO) optical vibrations, the damping constant γ, and the oscillator strength f of the mechanically free or clamped (NH₄)₂SO₄ crystal. A considerable change in the main reflection bands with pressure was observed, which is due to the effect of uniaxial pressure on the NH₄ and SO₄ tetrahedral frames.     

Acoustic attenuation in ferroelectric Sn<Subscript>2</Subscript>P<Subscript>2</Subscript>S<Subscript>6</Subscript> crystals

The temperature and frequency dependencies of sound attenuation for the proper uniaxial ferroelectric Sn₂P₂S₆, which has a strong nonlinear interaction of the polar soft optic and fully symmetrical optic modes that is related to the triple well potential, were studied by Brillouin spectroscopy. It was found that the sound velocity anomaly is described in the Landau-Khalatnikov approximation with one relaxation time. For explanation of the observed temperature and frequency dependencies of the sound attenuation in the ferroelectrric phase, the accounting of several relaxation times is needed and, for quantitative calculations, the mode Gruneisen coefficients are more appropriate as interacting parameters than are the electrostrictive coefficients. Relaxational sound attenuation by domain walls also appears in the ferroelectric phase of Sn₂P₂S₆ crystals.     

Optical phonons in Rb<Subscript>2</Subscript>TeBr<Subscript>6</Subscript> and Cs<Subscript>2</Subscript>TeBr<Subscript>6</Subscript> crystals

Raman scattering in Rb₂TeBr₆ and Cs₂TeBr₆ crystals is studied. The phonon spectra of the crystals are calculated using the factor group method. The number of Raman-active modes, their symmetries, and selection rules are found. Observed Raman spectrum lines are identified with atomic vibration modes of the crystal.     

Electronic excitation energy transfer and nonstationary processes in KH<Subscript>2</Subscript>PO<Subscript>4</Subscript>:Tl crystals

We report the results of our experimental study and numerical simulation of the electronic excitation energy transfer to impurity centers under conditions where nonstationary processes take place in the hydrogen sublattice of potassium dihydrogen phosphate (KH₂PO₄) single crystals doped with mercury-like Tl⁺ ions (KDP:Tl). We present the experimental results of our investigation of the decay kinetics of the transient optical absorption (100 ns–50 s) of intrinsic defects in the hydrogen sublattice of KDP:Tl obtained by pulsed absorption spectroscopy and the results of our study of the dynamics of the change in steady-state luminescence intensity with irradiation time (1–5000 s). To explain the transfer of the energy being released during electron recombination involving intrinsic KDP:Tl lattice defects, we formulate a mathematical model for the transfer of this energy to impurity Tl⁺ luminescence centers. Within the model being developed, we present the systems of differential balance equations describing the nonstationary processes in the electron subsystem and the hydrogen sublattice; provide a technique for calculating the pair correlation functions Y(r, t) of dissimilar defects based on the solution of the Smoluchowski equation for the system of mobile hydrogen sublattice defects; calculate the time-dependent reaction rate constants K(t) for various experimental conditions; and outline the peculiarities and results of the model parametrization based on our experimental data. Based on our investigation, the dramatic and significant effect of a gradual inertial increase by a factor of 50–100 in steady-state luminescence intensity in the 4.5-eV band in KDP:Tl crystals due to the luminescence of mercury-like Tl⁺ ions has been explained qualitatively and quantitatively.     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Effect of organic dyes on the dielectric properties of KH<Subscript>2</Subscript>PO<Subscript>4</Subscript> crystals

The effect of organic dyes on the dielectric properties of KH₂PO₄ (KDP) crystals is studied over a wide range of temperatures. The dielectric properties of KDP crystals doped with molecules of the Chicago Sky Blue and Amaranth organic dyes are investigated for the first time. The dye molecules can be incorporated into the crystal lattice of KDP and selectively paint the pyramidal growth sectors of the crystal. The influence of dye organic impurities on the domain contribution to the permittivity is analyzed with due regard for the sectoral crystal structure. It is demonstrated that, upon doping of KDP crystals with organic dyes, the blocking effect of background impurities on domain walls is substantially weakened in the prismatic growth sector of the crystal in the polar phase. This leads to a noticeable change in the dielectric properties, specifically to an increase in the domain contribution to the permittivity of the crystal.     

Polarization processes in BaBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> and SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics in infralow-frequency fields

The dielectric nonlinearity in BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ layered ceramics was studied by measuring their polarization loops and reverse dependences of permittivity. It was shown that the features of the dielectric response of BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ in strong fields can be explained by glass-like properties and the contribution of the domain structure of the ferroelectric material to repolarization processes, respectively.     

Temperature dependences of the second-harmonic generation in LiKB<Subscript>4</Subscript>O<Subscript>7</Subscript> single crystals

We have discovered interesting temperature anomalies of the second-harmonic generation (SHG) in novel LiKB₄O₇ single crystals. We have found that the maximal SHG signal exists at a temperature equal to about 230–240 K. The maximally achieved second-order susceptibility was equal to about 1.4 pm/V at a 1064-nm laser wavelength and was achieved at the sizes of crystallites of less than 80 nm. At sizes of about 1200 nm, the second-order optical properties are commensurable with the second-order susceptibilities of the bulk crystallites and are equal to about 0.6 pm/V. The observed size sensitivity of the effect may reflect the substantial role of the nanoconfined effects.