Strongly-driven coarsening of height-selected Pb islands on Si(1 1 1)

A theoretical model is proposed to describe the rapid coarsening observed for Pb islands on a Si(1 1 1) surface where classical kinetics breaks down. In this system, quantum size effects produce mesa-like Pb islands with chemical potentials depending strongly on their heights, in addition to the usual dependence on the step curvature. Furthermore, a dense wetting layer enables fast mass transport between islands. Incorporating these features, our theoretical model predicts evolution of the island height distribution in good agreement with experiments.     

Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation

Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of alternating layer and island growth can be attributed to spontaneous quantum phase separation based on a first-principles calculation of the system energy.     

Lead growth on Si(111) surfaces reconstructed by indium

We study the Pb growth on both √3 × √3-In and 4 × 1-In reconstructed Si(111) surfaces at room and low temperature (160 K). The study takes place with complementary techniques, to investigate the role of the substrate reconstruction and temperature in determining the growth mode of Pb. Specifically, we focus on the correlation between the growth morphology and the electronic structure of the Pb films. The information is obtained by using Auger electron spectroscopy, low energy electron diffraction, soft x-ray photoelectron spectroscopy, scanning tunneling microscopy and spot profile analysis-low energy electron diffraction. The results show that, at low temperature and coverage ≤12 ML on the Si(111)√3 × √3-In surface, Pb does not alter the initial semiconducting character of the substrate and three-dimensional Pb islands with poor crystallinity are grown on a wetting layer. On the other hand, for the same coverage range, Pb growth on the Si(111)4 × 1-In surface results in metallic Pb(111) crystalline islands after the completion of a double incomplete wetting layer. In addition, the bond arrangement of the adatoms is studied, confirming that In adatoms interact more strongly with the silicon substrate than the Pb ones. This promotes a stronger Pb-Pb interaction and enhances metallization. The onset of the metallization is correlated with the amount of pre-deposited In on the Si(111) surface. The decoupling of the Pb film from the 4 × 1-In interface can also explain the unusual thermal stability of the uniform height islands observed on this interface. The formation of these Pb islands is driven by quantum size effects. Finally, the different results of Pb growth on the two reconstructed surfaces confirm the importance of the interface, and also that the growth morphology, as well as the electronic structure of the Pb film can be tuned with the initial substrate reconstruction.     

Effect of substrate doping concentration on quantum well states of Pb island grown on Si(1 1 1)

The interaction between the metallic film/island and the semiconductor substrate is important to the electronic properties of metallic nanostructure grown on semiconductor substrate. Here, we report a series of comparison experiments to investigate the effect of doping concentration of Si substrates on the quantum well state (QWS). Using scanning tunneling microscopy, we observed that the apparent QWS energy positions show a strong dependence on the substrate used and on the sample temperature. Further experimental results by varying the height of scanning tunneling microscope tip over the Pb island uncovered that the observed apparent QWS energy position changes mainly come from the partial bias voltage drop on the combined resistance of the Pb wetting layer and the substrate, which is comparable with the vacuum tunneling resistance at low temperatures.     

Hydrodynamic-flow-driven wetting in thin film polymer blends: growth kinetics and morphology

A thin film of deuterated poly(methyl methacrylate) (A) and poly(styrene-ran-acrylonitrile) at the critical composition is annealed in the two phase region to induce simultaneous phase separation and wetting of the A-rich phase at the surface. Using forward recoil spectrometry, the wetting layer thickness is found to grow linearly with time at 185 degrees C and 190 degrees C. After selective etching of A, atomic force microscopy reveals a depletion layer having a bicontinuous, phase separated morphology. The A-rich tubes in this layer provide a pathway for rapid transport of the wetting phase from the bulk to the surface via hydrodynamic flow. Taken together, fast wetting layer growth t(1) and connectivity between the wetting layer and bulk provide unambiguous support for hydrodynamic-flow-driven wetting in thin film polymer blends.     

Pb液滴在Ni基底润湿铺展行为的分子动力学模拟

采用分子动力学方法研究了Pb液滴在Ni(100)晶面、(110)晶面和(111)晶面的铺展润湿行为. 结果表明: Pb液滴在Ni(100)及(111)基底上的润湿铺展现象呈各向同性, 而在Ni(110)基底上的润湿铺展现象呈明显的各向异性, 且这种各向异性源于Ni(110)晶面点阵结构上Pb原子沿不同晶向的扩散机制及速度的明显差异; Pb液滴在Ni(111)晶面上铺展时, 未发生表面合金化, 液滴铺展动力学描述近似满足 R² ∝ t, 而液滴在(100)晶面和(110)晶面上铺展时表面产生合金化现象, 铺展动力学关系近似满足 R⁴ ∝ t, 且液滴在(100)晶面上的铺展速度高于(110)晶面上的铺展速度. 关键词： 分子动力学 润湿各向异性 铺展膜 扩散机制     

Wetting layer thickness and early evolution of epitaxially strained thin films

We propose a physical model which explains the existence of finite thickness wetting layers in epitaxially strained films. The finite wetting layer is shown to be stable due to the variation of the nonlinear elastic free energy with film thickness. We show that anisotropic surface tension gives rise to a metastable enlarged wetting layer. The perturbation amplitude needed to destabilize this wetting layer decreases with increasing lattice mismatch. We observe the development of faceted islands in unstable films.     

Fluctuation forces and wetting layers in colloid-polymer mixtures

We present confocal microscopy experiments on the wetting of phase-separated colloid-polymer mixtures. We observe that an unusually thick wetting layer of the colloid-rich phase forms at the walls of the glass container that holds the mixture. Because of the ultralow interfacial tension between the colloid-rich and the polymer-rich phases, the thermally activated roughness of the interfaces becomes very big and measurable. We observe that close to the critical point the roughness of the interface between the wetting layer and the polymer-rich phase decreases with decreasing layer thickness: large excursions of the interface are confined in the wetting layer. The measured relationship between the roughness and the thickness of the wetting layer is in qualitative agreement with the predictions of renormalization group theory for short-range forces and complete wetting.     

Dynamics of wetting layer formation

We study the formation and growth of wetting layers in the binary liquid mixture cyclohexane-methanol. By progressively deuterating the methanol we can tune the equilibrium wetting layer thickness. Hysteresis of the transition is observed for large thicknesses and is absent for thinner ones. This can be understood by calculating the activation energy for wetting layer nucleation as a function of the film thickness. We also show that the late-stage growth of the wetting layer after the nucleation process follows a power law in time, in agreement with a diffusion-limited growth mechanism proposed theoretically.     

New lead-containing solder alloy with improved properties

Structure, hardness, mechanical and electrical transport properties of the rapidly solidified Pb–25Sn alloy with Cd additions have been investigated. The results show that, a continuous increase in Cd content causes more precipitations of Cd as a third phase, which in turn causes continuous enhancement of the wetting, electrical and mechanical properties of this alloy. In spite of the higher value of TCR for the alloy Pb–25Sn–20Cd, it has the most enhanced properties when compared with the others. It has a lower electrical resistivity, lower wetting angle, higher Vickers microhardness values and yield strength when compared with the eutectic Pb–Sn solder alloy.     

Reversible sphere-to-lamellar wetting transition at the interface of a diblock copolymer system

We use ellipsometry to investigate a transition in the morphology of a sphere-forming diblock copolymer thin-film system. At an interface the diblock morphology may differ from the bulk when the interfacial tension favours wetting of the minority domain, thereby inducing a sphere-to-lamella transition. In a small, favourable window in energetics, one may observe this transition simply by adjusting the temperature. Ellipsometry is ideally suited to the study of the transition because the additional interface created by the wetting layer affects the polarisation of light reflected from the sample. Here we study thin films of poly(butadiene-ethylene oxide) (PB-PEO), which order to form PEO minority spheres in a PB matrix. As temperature is varied, the reversible transition from a partially wetting layer of PEO spheres to a full wetting layer at the substrate is investigated.     

Coolant Wetting Simulation on Simplified Stator Coil Model by the Phase-Field Lattice Boltzmann Method

Stator coils of automobiles in operation generate heat and are cooled by coolant poured from above. The flow characteristic of the coolant depends on the coil structure, flow condition, solid–fluid interaction, and fluid property, which has not been clarified due to its complexities. Since straight coils are aligned and layered with an angle at the coolant-touchdown region, the coil structure is simplified to a horizontal square rod array referring to an actual coil size. To obtain the flow and wetting characteristics, two-phase fluid flow simulations are conducted by using the phase-field lattice Boltzmann method. First, the flow onto the single-layered rod array is discussed. The wetting area is affected both by the rod gap and the wettability, which is normalized by the gap and the averaged boundary layer thickness. Then, the flow onto the multi-layered rod arrays is investigated with different rod gaps. The top layer wetting becomes longitudinal due to the reduction of the flow advection by the second layer. The wetting area jumps up at the second layer and increases proportionally to the below layers. These become remarkable at the narrow rod gap case, and finally, the dimensionless wetting area is discussed at each layer.     

PbTiO3/PbZr0.3Ti0.7O3/PbTiO3夹心结构铁电薄膜子晶层的优化

用Sol-Gel法制备了Pb_(1+x)TiO₃/PbZr_03Ti_07O₃/Pb_(1+x)TiO₃(PT/PZT/PT)夹心结构及PZT铁电薄膜,为了获得高质量的PT/PZT/PT夹心结构铁电薄膜,使用不同过量Pb配比(x)的PbTiO₃ (PT)层进行制备,以获得优化的PT子晶层.X射线 关键词： PT/PZT/PT 夹心结构 子晶 铁电薄膜     

Multiscale structure, interfacial cohesion, adsorbed layers, and thermodynamics in dense polymer-nanoparticle mixtures

We establish the existence and size of adsorbed polymer layers in miscible dense nanocomposites and their consequences on microstructure and the bulk modulus. Using contrast-matching small-angle neutron scattering to characterize all partial collective structure factors of polymers, particles, and their interface, we demonstrate qualitative failure of the random phase approximation, accuracy of the polymer reference site interaction model theory, ability to deduce the adsorbed polymer layer thickness, and high sensitivity of the nanocomposite bulk modulus to interfacial cohesion.     

InAs wetting layer evolution on GaAs(0 0 1)

The evolution of two-dimensional (2D) strained InAs wetting layers on GaAs(0 0 1), grown at different temperatures by molecular beam epitaxy, was studied by in situ high-resolution scanning tunneling microscopy. At low growth temperature (400 °C), the substrate exhibits a well-defined GaAs(0 0 1)-c(4 × 4) structure. For a disorientation of 0.7°, InAs grows in the step-flow mode and forms an unalloyed wetting layer mainly along steps, but also in part on the terrace. The wetting layer displays some local c(4 × 6) reconstruction, for which a model is proposed. 1.2 monolayer (ML) InAs deposition induces the formation of 3D islands. At a higher temperature (460 °C), the wetting layer is obviously alloyed even at low InAs coverage. The critical thickness of the wetting layer for the 2D-to-3D transition is shifted to 1.50 ML in this case presumably since the strain is reduced by alloying.     

Nonlinear dynamics of doped semiconductor quantum dot lasers

We discuss the influence of wetting layer doping on the turn-on dynamics of a quantum dot (QD) laser by using a microscopically based rate equation model which separately treats the dynamics of electrons and holes. As the carrier-carrier scattering rates depend nonlinearly on the wetting layer carrier densities we observe drastic changes of relaxation oscillation frequency and damping if the wetting layer is doped. We gain insight into the nonlinear dynamics of the QD laser by a detailed analysis of various sections of the five-dimensional phase space focusing on changes in the coupling between QD electron and holes dynamics.     

Experimental studies of solid state surface wetting of tin (Sn) on aluminium (Al)

Under ultra high vacuum (UHV) conditions tin (Sn) forms a monoatomic wetting layer on aluminium (Al) surfaces if Sn-islands formed by a preceding deposition process are present. Previous experimental observations and Kinetic Monte Carlo (KMC) simulations suggest that wetting layer formation is governed by thermally activated surface diffusion and adsorption processes.This paper presents a systematic study of the wetting of the inner and outer interfaces of Al by Sn in sandwich systems consisting of a 400 nm Al-base layer, a 10 nm Sn interlayer and a 400 nm thick Al capping layer. The morphology and chemical composition of the sandwich systems is investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The wetting process is studied by scanning auger electron spectroscopy (AES) under UHV conditions. Depositing the Al-capping layer at different deposition rates allows for the assessment of the influence of the grain boundary density on the velocity of Sn-transport through the Al-capping layer. Studying the permeation speed of Sn through the capping layer at different temperatures shows that Sn penetrates the capping layer much more rapidly at elevated temperatures thus corroborating the involvement of thermally activated mechanisms in the transport process.     

Effect of oxygen on the stability of Ag islands on Si(111)-7 × 7

We have used scanning tunneling microscopy to probe the effect of oxygen exposure on an ensemble of Ag islands separated by a Ag wetting layer on Si(111)-7 × 7. Starting from a distribution dominated by islands that are 1 layer high (measured with respect to the wetting layer), coarsening in ultrahigh vacuum at room temperature leads to growth of 2-layer islands at the expense of 1-layer islands, which is expected. If the sample is exposed to oxygen, 3-layer islands are favored, which is unexpected. There is no evidence for oxygen adsorption on top of Ag islands, but there is clear evidence for adsorption in the wetting layer. Several possible explanations are considered.     

Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots

We carry out a theoretical analysis of wetting layer effect on band-edge profiles and electronic structures of InAs/GaAs truncated-pyramid quantum dots, including the strain effect. A combination of an analytical strain model and an eight-band Fourier transform-based k · p method is adopted in the calculation. Strain modified band-edge profiles indicates that wetting layer widens the potential well inside the dot region. Wetting layer changes ground-state energy significantly whereas modifies probability density function only a little. The main acting region of wetting layer is just underneath the base of the dot. Wetting layer redistributes probability density functions of the lowest electron state and probability density functions of highest hole state differently because of the different action of quantum confinement on electrons and holes.     

Bound to continuum intersubband transition optical properties in the strain reducing layer-assisted InAs quantum dot structure

In this paper, the impact of wetting layer, strain reducing layer and dot height on the electronic, linear and nonlinear optical properties of bound to continuum states transitions are investigated in a system of InAs truncated conical shaped quantum dot covered with the In_xGa_1−x As strain reducing layer. The electronic structure, containing two main states of S and wetting layer states (WL), was calculated by solving one electronic band Hamiltonian with effective-mass approximation. The results reveal that the presence of the strain reducing layer in the structure extends the quantum dot emission to longer wavelength which is reported as a red-shift of the photoluminescence (PL) peak in the experimental measurement. This study also highlights the possibility of improving the intersubband optical properties based on the significant size-dependence of the three layer dot matrix by employing the strain reducing and wetting layers. According to this simulation, relatively tall dots on the thick wetting layer introduce the optimized structure size for practical applications to meet the SRL assisted enhanced dot structure.