形变碳纳米管场效应晶体管的电学性质

在紧束缚理论的基础上,推导出轴向拉伸和扭转形变时碳纳米管（CNT）的能带公式.结果显示拉伸和扭转形变都可以改变CNT的导电性质,在金属型和半导体型之间转变,特别是对于锯齿型CNT,根据n 与3的余数关系,在拉伸和扭转中分别显示出三种不同的变化规律.进一步应用场效应晶体管Natori理论模拟计算形变对CNT场效应晶体管的电流-电压特性的影响,锯齿型CNT根据n 与3的余数关系表现出不同的电流变化趋势,而对于扶手椅型CNT轴向拉伸不改变电流;在扭转形变时,CNT电流急剧升高,特别是扶手椅型CNT.锯齿型CNT和扶手椅型CNT的电流随扭转角度和外电压行为明显不同.在某些特定的扭转角度,电流随扭转角度变化非常显著,显示出锯齿型CNT和扶手椅型CNT发生半导体型与金属型之间的转变. 关键词： 碳纳米管 紧束缚理论 费米能级 能带结构     

Stability and electronic structure of InN nanotubes from first-principles study

The stability and electronic structure of hypothetical InN nanotubes were studied by first-principles density functional theory. It was found that the strain energies of InN nanotubes are smaller than those of carbon nanotubes of the same radius. Single-wall zigzag InN nanotubes were found to be semiconductors with a direct band gap while the armchair counterparts have an indirect band gap. The band gaps of nanotubes decrease with increasing diameter, similar to the case of carbon nanotubes.     

Band gap of carbon nanotubes under combined uniaxial–torsional strain

Within tight-binding model, the band gaps of armchair and zigzag carbon nanotubes (CNTs) under both uniaxial tensile and torsional strains have been studied. It is found that the changes in band gaps of CNTs depend strongly on the strain type. The torsional strain can induce a band gap for armchair CNTs, but it has little effect on band gap of the zigzag CNTs. While the tensile strain has great effect on band gap of zigzag CNTs, but it has no effect on that of the armchair CNTs. More importantly, when both the tensile and torsional strains are simultaneously applied to the CNTs, the band gap changes of armchair CNTs are not equal to a simple sum over those induced separately by uniaxial tensile and torsional strains. There exists a cooperative effect between two kinds of strains on band gap changes of armchair CNTs. But for zigzag CNTs, the cooperative effect was not found. Analytical expressions for the band gaps of armchair and zigzag CNTs under combined uniaxial–torsional strains have been derived, which agree well with the numerical results.     

Strain-induced changes in the band gap of doped carbon nanotubes

The results of a theoretical research into the band gap of strained doped carbon nanotubes of two structural modifications of the “armchair” and “zigzag” types are described. The electronic states in the doped nanotubes are considered in terms of the periodic Anderson model. Nitrogen and boron atoms are selected as donor and acceptor substitutional defects, respectively. The dependences of the band gap of the carbon nanotubes on impurity concentration and compressive and tensile strain are studied.     

剪切形变对硼氮掺杂碳纳米管超晶格电子结构和光学性能的影响

碳纳米管作为最先进的纳米材料之一, 在电子和光学器件领域有潜在的应用前景, 因此引起了广泛关注. 掺杂、变形及形成超晶格为调制纳米管电子、光学性质提供了有效途径. 为了理解相关机理, 利用第一性原理方法研究了不同剪切形变下扶手椅型硼氮交替环状掺杂碳纳米管超晶格的空间结构、电子结构和光学性质. 研究发现, 剪切形变会改变碳纳米管的几何结构, 当剪切形变大于12%后, 其几何结构有较大畸变. 结合能计算表明, 剪切形变改变了掺杂碳纳米管超晶格的稳定性, 剪切形变越大, 稳定性越低. 电荷布居分析表明, 硼氮掺杂碳纳米管超晶格中离子键和共价键共存. 能带和态密度分析发现硼氮交替环状掺杂使碳纳米管超晶格从金属转变为半导体. 随着剪切形变加剧, 纳米管超晶格能隙逐渐减小, 当剪切形变大于12%后, 碳纳米管又从半导体变为金属. 在光学性能中, 剪切形变的硼氮掺杂碳纳米管超晶格的光吸收系数及反射率峰值较未受剪切形变的均减小, 且均出现了红移.     

Strain-induced structural and direct-to-indirect band gap transition in ZnO nanotubes

First-principles calculations have been employed to investigate the structural transformation and direct to indirect band gap transition of ZnO nanotubes under uniaxial strain. The results show that armchair and zigzag nanotubes can be transformed to each other via unusual fourfold-coordinated structures under the applied strain. Both the armchair and zigzag nanotubes exhibit direct band gap while the unusual fourfold-coordinated ones display indirect band gap. The origin of such a direct-to-indirect band gap transition is explained based on the analyses of atomic orbital contributions.     

Lattice vibrations of armchair carbon nanotubes: phonons,soliton deformations and lattice discreteness effects

Small and large-amplitude elastic deformations of the armchair structure of single-walled carbon nanotubes are investigated with emphasis on the cylindrical geometry. As starting model, we consider a discrete one-dimensional lattice of atoms interacting via a Lennard-Jones type two-body potential. In an expansion scheme using cylindrical coordinates where radial displacements are assumed negligible compared to the angular motions, a sine-lattice Hamiltonian is derived. In the limit of small-amplitude angular displacements, the dispersion spectrum of acoustic phonons is derived and the associate characteristic frequency is given as a function of parameters of the model. In the large-amplitude regime, lattice vibrations give rise to kink-type deformations which move undergoing lattice dispersion and lattice discreteness effects. The dispersion law of the kink motion is obtained and shown to lower the effect of lattice discreteness, giving rise to a vanishing Peierls stress for kink sizes of the order of a few lattice spacings. Implications of the coupling of two armchair structures on the stability of vibrational modes of an individual armchair nanotube are also discussed. A gap of forbidden modes is predicted in the phonon spectrum while the energy needed to create a kink deformation in individual nanotubes is shifted in the presence of a wall-to-wall interaction.Received: 2 August 2004, Published online: 14 December 2004PACS: 81.07.De Nanotubes - 62.30. + d Mechanical and elastic waves-vibrations - 63.22. + m Phonons in low-dimensional nanoscale materials - 63.20.Ry Anharmonic lattices modes     

Encapsulation of small fullerenes into nitrogenated holey nanotubes: a density functional theory study

Encapsulation of fullerene into nanotubes based on a C₂N sheet, known as nitrogenated holey graphene, was investigated using density functional theory. The structural and electronic properties of these carbon hybrid materials, consisting of nitrogenated holey nanotubes and a small C₂₀ fullerene, were studied. The formation energies showed that encapsulation of the fullerene into the nitrogenated holey nanotube is an exothermic process. To characterise the electronic properties, the electronic band structure and density of states of armchair and zigzag nitrogenated holey nanotubes were calculated. Filling these nanotubes with the C₂₀ fullerene resulted in a p-type semiconducting character. The energy band gap of the nitrogenated holey nanotubes decreased with fullerene encapsulation. The results are indicative of the possibility of band gap engineering by encapsulation of small fullerenes into nitrogenated holey nanotubes.     

Metal-to-semiconductor transition in squashed armchair carbon nanotubes

We investigate electronic transport properties of the squashed armchair carbon nanotubes, using tight-binding molecular dynamics and the Green's function method. We demonstrate a metal-to-semiconductor transition while squashing the nanotubes and a general mechanism for such a transition. It is the distinction of the two sublattices in the nanotube that opens an energy gap near the Fermi energy. We show that the transition has to be achieved by a combined effect of breaking of mirror symmetry and bond formation between the flattened faces in the squashed nanotubes.     

From layers to nanotubes: Transition metal disulfides TMS<Subscript>2</Subscript>

MoS₂ and WS₂ layered transition-metal dichalcogenides are indirect band gap semiconductors in their bulk forms. Thinned to a monolayer, they undergo a transition and become direct band gap materials. Layered structures of that kind can be folded to form nanotubes. We present here the electronic structure comparison between bulk, monolayered and tubular forms of transition metal disulfides using first-principle calculations. Our results show that armchair nanotubes remain indirect gap semiconductors, similar to the bulk system, while the zigzag nanotubes, like monolayers, are direct gap materials, what suggests interesting potential applications in optoelectronics.     

Geometry and electronic properties of single vacancies in achiral carbon nanotubes

An ideal single vacancy can be formed by removing one carbon atom from a hexagonal network. The vacancy is one of the most important defect structures in carbon nanotubes (CNTs). Vacancies can affect the mechanical, chemical, and electronic properties of CNTs. We have systematically investigated single vacancies and their related point defects for achiral, single-walled carbon nanotubes (SWNTs) using first-principles calculations. The structures around single vacancies undergo reconstruction without constraint, forming ground-stateor metastable-state structures. The 5-1DB and 3DB point defects can be formed in armchair CNTS, while the 5-1DB-P and 5-1DB-T point defects can be formed in zigzag CNTs. The related point defects can transform into each other under certain conditions. The formation energies of armchair CNTs change smoothly with the tube radius, while in the case of the 3DB defect, as the radius get larger, the formation energies tend towards a constant value.     

A computational prediction of total carbo-merization on single-walled carbon nanotubes

The total carbo-mer of single-walled carbon nanotubes (C-SWCNTs) are constructed by inserting two sp carbon atoms into each C-C bond in pristine single-walled carbon nanotubes (SWCNTs). The geometric, mechanical and electronic properties for these novel structures are investigated by self-consistent-field crystal calculations. The calculated zigzag and chiral C-SWCNTs are all small gap semiconductors, whereas the metallic property is still kept in the armchair C-SWCNT. The calculated Young's moduli of C-SWCNTs are smaller than those of SWCNTs. Our calculations show that the zigzag C-SWCNTs have higher mobility than the corresponding SWCNTs. Moreover, the calculated mobility of the C-SWCNTs has a periodic change with the change of the tube diameters.     

Chemically active substitutional nitrogen impurity in carbon nanotubes

We investigate the nitrogen substitutional impurity in semiconducting zigzag and metallic armchair single-wall carbon nanotubes using ab initio density functional theory. At low concentrations (less than 1 at. %), the defect state in a semiconducting tube becomes spatially localized and develops a flat energy level in the band gap. Such a localized state makes the impurity site chemically and electronically active. We find that if two neighboring tubes have their impurities facing one another, an intertube covalent bond forms. This finding opens an intriguing possibility for tunnel junctions, as well as the functionalization of suitably doped carbon nanotubes by selectively forming chemical bonds with ligands at the impurity site. If the intertube bond density is high enough, a highly packed bundle of interlinked single-wall nanotubes can form.     

轴压和扭转复合载荷作用下氮化硼纳米管屈曲行为的分子动力学模拟

采用分子动力学方法模拟了氮化硼纳米管在轴压和扭转复合荷载作用下的屈曲和后屈曲行为.在各加载比例下,给出了初始线性变形阶段和后屈曲阶段原子间相互作用力的变化,确定了屈曲临界荷载关系.通过对屈曲模态的细致研究,从微观变形机理上分析了纳米管对不同外荷载力学响应的差异.研究结果表明,扶手型和锯齿型纳米管均呈现出非线性的屈曲临界荷载关系,复合加载下的屈曲行为具有强烈的尺寸依赖性.温度升高将导致屈曲临界荷载的下降,且温度的影响随加载比例的变化而变化.无论在简单加载或复合加载中,同尺寸的碳纳米管均比氮化硼纳米管具有更强地抵抗屈曲荷载的能力.     

单壁纳米管的弹性性质

基于第一性原理计算了一系列单壁碳纳米管(椅型、锯齿型)和氮化硼锯齿型纳米管的杨氏模量.用实际的数值结果显示了杨氏模量与纳米管管径之间的依赖关系.还讨论了各类纳米管卷曲形变能以及平衡基矢长度a随管型的变化. 关键词： 单壁纳米管 平衡基矢长度 杨氏模量 形变能     

单壁碳纳米管中的金属-半导体转变与对称性

报道了最近作者对受压扶手椅形单壁碳纳米管中的金属-半导体转变机理的理论研究。这种转变在两种因素的共同作用下得以发生，即外加压力造成碳纳米管镜像对称破缺，以及被压碳纳米管两侧原子发生成键相互作用．作者还进一步揭示了发生这种转变的普遍机制：只要将单壁碳纳米管中两套原来等价的子晶格变得可以区分(对称性破缺)，在费米能附近就会产生能隙．     

Electronic structure in finite-length deformed metallic carbon nanotubes

Using the -band tight-binding (TB) model and the quantum box boundary condition, we have discussed how both of the applied strain and finite-length affect the energy bands of metallic carbon nanotubes (CNTs). It is found that, for finite-length CNTs, energy gap for the armchair tube under uniaxial strain and metallic zigzag tube under torsional strain will oscillate with increasing strain, which do not exist in the case of infinite-length CNTs, and will be able to be observed by experiments in future.     

Effects of adsorbed gas on the electrical conductivity of metallic carbon nanotubes

We study the gas molecule adsorption effects on the electrical conductivity of both zigzag (9, 0) and armchair (5, 5) carbon nanotubes. Using the tight-binding model, Green’s function technique and coherent potential approximation, it is found that the adsorption of some gas molecules can cause a change in the electrical conductivity of metallic single-walled carbon nanotubes.     

Electronic properties of a zinc oxide nanotube under uniaxial tensile strain: a density functional theory study

In this article, density functional theory calculations were employed to investigate the electronic properties of (4,4) armchair zinc oxide single-walled nanotubes (ZNONTs) under uniaxial mechanical deformations. It was found that the highest-occupied molecular orbital and the lowest-unoccupied molecular orbital gap and the value of radial buckling will both decrease linearly with the increase of axial strain. The elongation of the ZNONT mainly originates from the decrease and increase of two characteristic bond angles rather than Zn–O ionic bond elongation. This mechanical behavior is very different from the uniaxial tensional processes of carbon nanotubes and silicon carbide nanotubes formed by covalent bonds. The partial densities of states of the Zn atom and O atom show that the unoccupied states are gradually left-shifted as ZNONT elongates from 0 to 15%. Neither Mulliken charge nor deformation density clearly changes with the different tension strains. Bond order analysis also indicates the bonding strength will decrease as the strain increases from 0 to 15%.     

Combined effect of Aharonov-Bohm effect and uniaxial strain on quantum conductance oscillations of carbon nanotube resonators

Using the π orbital tight-binding model and the multi-channel Laudauer-Büttiker formula, the combined effect of Aharonov-Bohm effect (induced by an axial magnetic field) and uniaxial strain on quantum conductance oscillations of the electronic Fabry-Perot resonators composed of armchair and metallic zigzag single-walled carbon nanotubes (SWNTs) has been studied. It is found that, for the case of the armchair SWNT, conductance oscillations near the band gap are dominated by Aharonov-Bohm effect, while the conductance oscillations in other regions are dominated by the uniaxial strains. The combined effect of Aharonov-Bohm effect and uniaxial strains on quantum conductance oscillations is not obvious. But, for the case of the metallic zigzag SWNTs, obvious single-channel transport and one or two conductance oscillations existing in two different gate voltage ranges were found by the combined effect of uniaxial strain and axial magnetic field.