Physical properties of n-CdGeAs2 single crystals prepared by low-temperature crystallization

The first results obtained in studies of the temperature dependences of electrical conductivity and Hall constant of n-CdGeAs₂ single crystals prepared by low-temperature crystallization are reported. It has been established that the method developed permits growing single crystals with a free-electron concentration ⋍(1−2)×10¹⁸ cm⁻³ and a Hall mobility ⋍10000 cm²/(Vs) at T=300 K. It is shown that the temperature dependence of Hall mobility exhibits a behavior characteristic of electron scattering by lattice vibrations, whereas below 150 K a deviation from this law is observed to occur evidencing an increasing contribution of static lattice defects to scattering. The Hall mobility in the crystals prepared was found to reach ⋍36000 cm²/(Vs) at 77 K. Photosensitive heterojunctions based on n-CdGeAs₂ single crystals were prepared. The spectral response of the photosensitivity of these structures is analyzed. It is concluded that this method is promising for preparation of perfect CdGeAs₂ crystals. Fiz. Tverd. Tela (St. Petersburg) 41, 1190–1193 (July 1999)     

Copper and native defects in zinc telluride

Zinc telluride crystals were grown from tellurium-rich solutions containing 10¹⁷–10²⁰ cm^?3 atoms of copper. The copper concentrations in these crystals were measured by activation analysis. Hall effect and resistivity measurements were performed. Photoluminescence spectra were also determined. Our interpretation of the different results is that copper brings about both acceptor defects Cu_Zn with a 0·12–0·13 eV ionization energy, and donor defects. The second acceptor level of the zinc vacancy was found to be at 0·15 eV.     

The temperature and light intensity dependence of photorefraction in LiNbO3

In the paper the dependence of the photorefraction (PhR) in LiNbO₃ and LiNbO₃−Fe (0.1 wt%, 0.3wt%) crystals on light intensity (within 10¹⁶–10²³ quanta·cm⁻²·s⁻¹ at wavelengths 496.5 nm and 600 nm) and temperature (in the region 100–500 K) is studied. For all the crystals the limiting values of PhR are similar and atT=293 K Δn _sat ^lim ≈3·10⁻³. In LiNbO₃ the temperature dependence of PhR in the range 100–500 K requires to take into account at least two trapping centres.     

Hall effect in the natural glassy carbon of schungites

The temperature dependences (80–500 K) of the Hall coefficient and the resistivity of samples of schungite of types I and III (schungite I and schungite III), as well as a commercial glassy carbon, with carbon contents equal to 98, 30, and 99.99%, respectively, are measured. The character of the dependences of the resistivity and its numerical values are similar to those observed in polycrystalline graphites with a high degree of disorder and in synthetic glassy carbon. Conversely, the Hall coefficient in the schungite samples, as in high-quality single crystals and n-type intercalated compounds of graphite, is found to be negative, small in magnitude, and weakly dependent on the temperature. At room temperature it is equal to 2.83×10⁻²² and 0.305 cm³/C in schungite I and schungite III, respectively, the Hall mobility of the charge carriers in these materials is 8.0 and 9.2 cm²/V·s, and the Hall carrier concentration is 2.2×10²⁰ and 2.0×10¹⁹ cm⁻³. Fiz. Tverd. Tela (St. Petersburg) 39, 1783–1786 (October 1997)     

ESR of V4+ in α-RbTiOPO4 single crystals

We have recorded and investigated the ESR spectrum of vanadium-doped α-RbTiOPO₄ single crystals in the temperature interval 77–300 K. Two types of structurally distinct centers, V1 and V2, with a 4:1 ratio of the peak intensities were observed. The angular dependences of the resonance magnetic fields are described by a spin Hamiltonian corresponding to axial symmetry with the parameters g _∥1=1.9305, g _⊥1=1.9565, A _∥1=−168.2×10⁻⁴cm⁻¹, and A _⊥1=−54.3×10⁻⁴cm⁻¹ for V1 centers and g _∥2=1.9340, g _⊥2=1.9523, A _∥2=−169.0×10⁻⁴cm⁻¹, and A _⊥2=−55.2×10⁻⁴cm⁻¹ for V2 centers. A model of a paramagnetic center is proposed: The vanadium ions replace titanium ions in two structurally distinct positions Ti1 and Ti2 (V1 and V2 centers, respectively). The possibility that a VO²⁺ ion forms when α-RbTiOPO₄ crystals and crystals of the KTP group (KTiOPO₄, NaTiOPO₄, α-and β-LiTiOPO₄), studied earlier, are doped with vanadium is discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 534–536 (March 1998)     

Bulk and surface electron transport in topological insulator candidate YbB6–δ

We report the study of transport and magnetic properties of the YbB_6–δsingle crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB_6–δ are shown to depend on the concentration of intrinsic defects, which is estimated to range from 0.09% to 0.6%. The pronounced variation of Hall mobility μ_H found for bulk holes is induced by the decrease of transport relaxation time from τ ≈ 7.7 fs for YbB_5.994 to τ ≈ 2.2 fs for YbB_5.96. An extra contribution to conductivity from electrons with μ_H≈ –1000 cm² V^–1 s^–1 and the very low concentration n /n_Yb≈ 10^–6 discovered below 20 K for all the single crystals under investigation is suggested to arise from the surface electron states appeared in the inversion layer due to the band bending. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Saturable absorbers for passive Q-switching of erbium lasers emitting in the region of 3 μm

The phototropic properties of Fe:ZnSe, Co:ZnSe, and Co:ZnS single crystals have been investigated. It is shown that these crystals can be used to advantage as the saturable absorbers in solid-state erbium lasers emitting in the region of the 3-μm range. The absorption cross sections of the ground states of the Co²⁺ ion in the ZnSe (σ_GSA = 11·10⁻²⁰ cm²) and ZnS (σ_GSA = 5.6·10⁻²⁰ cm²) crystals and of the Fe²⁺ ion in the ZnSe (σ_GSA = 50·10⁻²⁰ cm²) crystal at λ = 2.79 μm were determined experimentally. It has been established that the above-indicated crystals in the excited state absorb light weakly. The use of these crystals as passive Q switches made it possible to realize, for the first time, the regime of Q-switching of a Cr,Er:YSGG laser emitting at a wavelength of 2.79 μm. Single pulses with an energy of 60 mJ and a duration of 170 nsec were obtained in the regime of passive Q-switching. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 747–751, November–December, 2005.     

Electro-physical properties of cadmium-silicon diarsenide irradiated by H<Superscript>+</Superscript> ions

The effect of proton irradiation (E = 5 MeV, D = 2 · 10¹⁷ cm⁻²) on electro-physical properties of p-CdSiAs ₂ crystals is studied. The irradiation resulted in semi-insulating CdSiAs ₂ samples with the Fermi-level position in the proximity of E_g/2. The energy position of a “neutral” point is calculated for CdSiAs ₂, and thermal stability of radiation defects is investigated. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 12–15, August, 2007.     

Influence of radiation-induced clusters on transport properties of silicon

Summary A calculation method for the scattering cross-section σ of charged carriers on radiation-induced cluster defects has been developed using a spherical cluster model with rectangular potential barrier shape, of radius and height of 15 nm and 0.6 eV, respectively. Values of the cluster cross-section around 2·10⁻¹¹ cm² have been obtained for charged carrier energies from 10⁻⁴ eV to over 600 eV. Applying the relaxation-time approximation of the Boltzmann equation, the influence of clusters on silicon transport properties has been observed to be close to the acoustic-phonon one. The dependence of the Hall factor on radiation-induced clusters has been determined numerically for temperatures ranging from 5 K to 400 K. The results indicate that the presence of clusters of such dimensions would not change significantly the Hall coefficientR _H.     

XUV generation from plasma produced by a XeCl excimer laser on a Cu target

Summary We present a detailed study of XUV and soft X-ray emission from Cu plasma produced by an excimer laser at intensitiesI _L≦8·10¹¹ W/cm². The XeCl excimer laser (ψ≈308 nm) delivers pulses with energyE _L≈2.3 J, temporal durationt _L≈100 ns and brightnessB≧10¹⁴ W/cm² sr. We recorded a spectral conversion efficiency η=0.5% eV⁻¹ forI _L=4·10¹¹W/cm² in the aluminium window at 73eV with a harder X-ray tail around ≈400eV. We also measured the dependence of X-ray signal on laser intensity and viewing angle. Experimental results have been compared with some analytical laser-plasma interaction models.     

Triboluminescence,a new tool to investigate fracture-initiation time of crystals under stress

The present paper reports that triboluminescence (TBL) does not appear at the instant of impact of the load but a certain time lag is required for its appearance which depends on the value of the stress applied to the crystal. Since TBL appears in sugar crystals during the creation of new surfaces, the fracture-initiation time of the crystal has been taken to be the delay time in observing TBL pulse after the application of stress. The dependence of fracture-initiation time,t _f ^σ , of crystals on the stress, σ, may be expressed ast _f ^σ =t _o exp (− ασ), wheret _o and α are constants. The values of the lattice energy, and the change in lattice energy per unit stress, of sugar crystals have been calculated from TBL measurements and they have been found to be 21·2 kcal mole⁻¹ and 0·41 × 10⁻⁸ kcal mole⁻¹ dyne⁻¹ cm² respectively.     

Unambiguous detection of monopoles

Summary The fission of a vortex line along the trajectory of a monopole in a superconducting medium is an unambiguous signature of a monopole. The numbern of the (stable) daughter vortices determines the monopole strengthg withg=2nφ/4π where ϕ₀=2.07·10⁻⁷ G cm².

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Riassunto La fissione di una linea di vortice lungo la traiettoria di un monopolo in un mezzo superconduttore è indice sicuro della segnatura di un monopolo. Il numeron di vortici figli (stabili) determina la forza del monopolog cong=nϕ₀/4π, dove ϕ₀=2.07·10⁻⁷ G cm².

     

ESR study of exchange coupled pairs in copper diethyldithiocarbamate

ESR investigations on exchange coupled pairs of Cu ions in single crystals of Cu(dtc)₂, isomorphously diluted with the corresponding diamagnetic zinc salt, are reported. The spin Hamiltonian parameters for the coupled species (S=1) are:g _‖=2.1025,g ₊=2.031,A=75.1×10⁻⁴ cm⁻¹,B=14.8×10⁻⁴,D=276.0×10⁻⁴ cm⁻¹ andE=46.7×10⁻⁴ cm⁻¹. While theg andA tensors show tetragonal symmetry, the zeor-field splitting tensor is rhombic and has principal axes different from those of theg andA tensors. Intensity measurements made down to 4.2 K indicate that the exchange is ferromagnetic with |FFF| ∼ 10 cm⁻¹. Direct dipole-dipole interaction appears to be the major contribution to the zero-field splitting. A calculation on the distributed point dipole model shows that dipolar interaction is considerably modified by the high covalency of the Cu-S bond and accounts for the rhombic nature of the tensor. The possible exchange mechanisms in Cu(dtc)₂—direct exchange and superexchange through the bridging sulphurs—are discussed.     

Magnetically stabilized electron-hole liquid in indium antimonide

Luminescence spectra of sufficiently pure n-type indium antimonide crystals (N _D−N _A=(1–22)·10¹⁴ cm⁻³) in a magnetic field of up to 56 kOe, at temperatures of 1.8–2 K, and high optical pumping densities (more than 100 W/cm²) have been studied. More evidence of the existence of electron-hole liquid stabilized by magnetic field has been obtained, and its basic thermodynamic parameters as functions of magnetic field have been measured. When the magnetic field increases from 23 to 55.2 kOe, the liquid density increases from 3.2·10¹⁵ to 6.7·10¹⁵ cm⁻³, the binding energy per electron-hole pair rises from 3.0 to 5.2 meV, and the binding energy with respect to the ground exciton level (work function of an exciton in the liquid) rises from 0.43 to 1.2 meV. Zh. éksp. Teor. Fiz. 111, 737–758 (February 1997)     

Quantum oscillations of the resistivity and hall coefficient and the quantum limit in Bi<Subscript>0.93</Subscript>Sb<Subscript>0.07</Subscript> alloys in a magnetic field along the trigonal axis

The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi_0.93Sb_0.07 semiconductor alloys with electron concentrations in the range 1 × 10¹⁶ cm⁻³ < n < 2 × 10¹⁸ cm⁻³. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit ħω _c /2 ≥ E _F, the electrical conductivity increases with an increase in the magnetic field: σ₂₂(H) ∼ H ^k . A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ₂₂(H) ≤ σ₂₁(H).     

On the electron mobility of δ layers in the presence of diamagnetic “ejection” of size-quantization levels

The Hall mobility of electrons is investigated as a function of the population of size-quantization subbands in the two-dimensional electron gas of a δ-doped layer in GaAs with constant total electron density N _s =3.2×10¹² cm⁻² (three initially filled subbands) at T=4.2 K. The population of the subbands is varied by diamagnetic “ejection” of size-quantization levels (i.e., pushing them over the Fermi level) by a magnetic field oriented parallel to the plane of the δ-doped layer. The measurements are made in magnetic fields making small angles (5°) with the plane of the doping. The magnetic field component normal to the plane was used to measure the Hall mobility and density. It is found that the measured Hall mobility as a function of the ejecting magnetic field has a distinct maximum. This maximum is due to an increase in the electron mobility in the first subband (the ground subband is assigned the index 0) and electron redistribution between subbands with in increasing ejecting magnetic field parallel to the plane of the δ layer. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 11, 704–708 (10 December 1997)     

EPR of trivalent iron ions in a LiCaAlF6 crystal

The orientational dependences of the EPR spectra of Fe³⁺-doped LiCaAlF₆ single crystals (space group P31c, Z=2), grown at the Laboratory of Magnetic Radio Spectroscopy at Kazan’ State University, have been investigated in detail. The spectrum is described by a trigonal spin Hamiltonian with the following parameters: B ₂₀=40.072×10⁻⁴ cm⁻¹, B ₄₀=−5.799×10⁻⁴ cm⁻¹, B ₄₃=−4.281×10⁻⁴ cm⁻¹, A _s=24.33±1, A _p=6.13±1, g _∥=g _⊥=2.00217±0.0003. A theoretical calculation of the hyperfine structure parameters shows that they are described quite well when allowance is made for the overlapping of the wave functions of the paramagnetic center and the ligands (F⁻). Fiz. Tverd. Tela (St. Petersburg) 39, 488–490 (March 1997)     

Optical properties of the ternary compound Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se:Co

We present the results of experimental studies of the optical properties of cobalt-doped Cd _x H_1−x Se (x = 0.18) single crystals with cobalt ion concentrations of NCo = 5·10¹⁸, 5·10¹⁹, and 1·10²⁰ cm⁻³ at T = 90 K and 300 K. The composition (x = 0.18) of the Cd _x Hg_1−x Se solid solution was selected so that the hypothetical resonance level is found on the bottom of the conduction band. We show that the cobalt ions in the mercury selenide can form a resonance donor level only for cobalt concentrations N_Co < 5·10¹⁸ cm⁻³. For N_Co ∼ 5·10¹⁸ cm⁻³, the cobalt ions substitute for mercury atoms, forming a solid solution and leading to an increase in the bandgap width and a change in the physical properties. The solubility of cobalt in the HgSe lattice can be greater than 5%–10%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 73–77, January–February, 2007.     

Critical current in Ag/BPSCCO tapes using low purity materials

Silver-clad Bi_1·7Pb_0·4Sr_1·8Ca₂Cu_3·5O _x (BPSCCO) tapes have been fabricated using low purity (98–99%) starting materials and following the powder-in-tube technique. MaximumJ _c values of 6·14 × 10³ A·cm⁻² at 77 K and 1·4 × 10⁵ A·cm⁻² at 4·2 K have been obtained in tapes subjected to the process of intermediate rolling and sintering. The bulk superconducting material used for the tape-fabrication contains both 2223 and 2212 phases in the ratio 60:40. A pure phase material and the optimization of the sintering parameters are expected to yield much higherJ _c values at 77 K. It is possible that the copper-rich phase(s) and/or a small amount of iron impurity (60 ppm) present in CuO might be acting as flux pinning sites and could be responsible for highJ _c values.     

Implantation doping of germanium with Sb,As, and P

The ions of Sb, As, and P have been implanted into germanium at energies ranging from 200 keV to 700 keV. Annealing was performed at 400°C, 550°C, and 650°C. The doping profile was determined by differentialCV-measurements. Strong outdiffusion (80%) and diffusion into the bulk material was observed after annealing. The remaining doping concentration and the diffusion constants were determined by a computer fit at 650°C. We foundD _Sb=1.8×10⁻¹³ cm²/s,D _As=9×10⁻¹⁴ cm²/s andD _P=4×10⁻¹⁴ cm²/s. Lower values of the diffusion constant were determined when the samples were covered with a SiO₂ layer.