First principles calculations of the low temperature electrical resistivity of potassium

The results of first principles calculations of the low temperature (2 K ?T?20 K) phonon-limited electrical resistivity of potassium are presented for both the Bloch limit (possible phonon drag effects are completely ignored) and the phonon drag limit (phonon-phonon collisions, which tend to suppress phonon drag, are neglected). In the former case the agreement with experiment is very good; in the latter, the calculated results are much too low. These results are at serious variance with the conclusions of Kaveh and Wiser and reopen the question of whether or not there is any evidence for important phonon drag effects in the low temperature electrical resistivity of potassium.     

The role of high-frequency phonons in the resistivity of simple monovalent metals at liquid helium temperatures

We derive an expression for the low-temperature electrical resistivity in simple monovalent metals caused by electron-impurity and electron-phonon scattering. Since the recent measurements of the electrical resistivity of van Kempen et al. give direct evidence for the existence of phonon drag we take phonon drag into account. Our expression is exact in the limit of strong electron-impurity scattering. For the model of an acoustically isotropic metal we obtain a simple analytical formula which reproduces the experimental data on potassium fairly well, with both fitparameters, the sound velocity and the pseudopotential, being close to the values expected from other data.     

Electrical resistivity of alkali metals

The temperature variations of the electrical resistivity of alkali metals lithium, sodium, potassium, rubidium and caesium are calculated in the free electron approximation and using Krebs's model for the phonon spectrum. The double average over the Fermi surface is evaluated by an improved method due toBailyn and the separation between normal and Umklapp processes is affected in a more satisfactory manner. The results of the calculations are compared with the experimental data obtained at different temperatures. The theoretical resistivity curves for sodium, potassium, rubidium and caesium show satisfactory agreement with experiment, but not in the case of lithium.     

Atomistic simulation of the motion of dislocations in metals under phonon drag conditions

The mobility of dislocations in the over-barrier motion in different metals (Al, Cu, Fe, Mo) has been investigated using the molecular dynamics method. The phonon drag coefficients have been calculated as a function of the pressure and temperature. The results obtained are in good agreement with the experimental data and theoretical estimates. For face-centered cubic metals, the main mechanism of dislocation drag is the phonon scattering. For body-centered cubic metals, the contribution of the radiation friction becomes significant at room temperature. It has been found that there is a correlation between the temperature dependences of the phonon drag coefficient and the lattice constant. The dependences of the phonon drag coefficient on the pressure have been calculated. In contrast to the other metals, iron is characterized by a sharp increase in the phonon drag coefficient with an increase in the pressure at low temperatures due to the α-∈ phase transition.     

Thermal resistivity of alkali metals

The temperature dependence of the thermal resistivity of alkali metals lithium, sodium, potassium, rubidium and caesium is determined within the free electron approximation by using Krebs's model for the phonon dispersion relations. The normal and Umklapp contributions are obtained separately from an improved method following the procedure of an earlier paper. The results of calculations are compared with available experimental information. The theoretical and experimental resistivity curves are found to be of similar nature, but they show considerable disagreement at low and high temperatures.

     

The electrical conduction mechanism in the semiconducting sodium niobate

The electric resistivity, Hall coefficient and thermoelectric power of the semiconducting NaNbO₃ were measured between 70 and 300K. Data indicate that this material behaves as a non-degenerate seniconductor. Oxygen defects which act as donors create a level at 0.12 eV below the conduction band. The phonon drag effect was observed below 230K.     

Nonohmic behavior of semiconductors in a quantizing magnetic field

We have investigated the nonohmic resistivity of a nondegenerate semiconductor in quantizing magnetic fields for the case where acoustic phonons are the dominant scattering mechanism. The type of I-V characteristics found depends upon which of three mechanism are dominant. The three mechanisms are due to collisional broadening, inelasticities due to the finite phonon energy and phonon drag. When collistion broadening is important, the nonlinearities in the current voltage characteristic arise only from electron heating, while when the inelasticities are dominant, there is also an intrinsic nonlinearity in the characteristic. Finally, when phonon drag is dominant, high frequency acoustoelectric amplification will occur when the Hall velocity exceeds the sound velocity, i.e. V_H > S.For the case where inelasticities dominate, a region of negative differential resistance is obtained that should persist even when there is considerable optical phonon scattering.     

Dispersion and thermal resistivity in silicon nanofilms by molecular dynamics

On nanoscale, thermal conduction is affected by system size. The reasons are increased phonon scattering and changes in phonon group velocity. In this paper, the in-plane thermal resistivity of nanoscale silicon thin films is analyzed by molecular dynamics (MD) techniques. Modifications to the dispersion relation are calculated directly with MD methods at high temperature. The results indicate that the dispersion relation starts to change for very thin films, at around two nanometers. The reasons are band folding and phonon confinement. Thermal resistivity is analyzed by the direct non-equilibrium method, and the results are compared to kinetic theory with modified dispersion relations. Thermal resistivity is affected by both surface scattering and dispersion. Moreover, in thin films, the characteristic vibrational frequency decreases, which in standard anharmonic scattering models indicates a longer relaxation time and affects the resistivity. The results indicate that in very thin films, the resistivity becomes highly anisotropic due to differences in surface scattering. In two cases, surface scattering was found to be the most important mechanism for increasing thermal resistivity, while in one case, phonon confinement was found to increase resistivity more than surface scattering.     

Phonon-dislocation scattering and phonon equilibration in metals at low temperatures

It is shown that phonon-dislocation scattering does not contribute significantly to equilibrating the phonon system for potassium. The implications of this result are discussed for the phonon-drag contribution to the low-temperature electrical resistivity.     

Role of the phonon trial function in determining the phonon-drag contribution to the low-temperature electrical resistivity

It is demonstrated that there is excellent agreement between the low-temperature electrical resistivity data for potassium and the Bailyn formulation for the phonon-drag electrical resistivity, which is based on a consistent solution for the phonon trial function in terms of the electron trial function.     

新型超导体MgB_2的热电势和电阻率研究

测量了MgB-2的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T2依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度Te(零电阻36.6K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能EF、能带宽度等.     

纯金属电阻率的统计模型

本文提出了纯金属电阻率与声子浓度及声子平均动量的平方成正比的统计模型，由此简化模型，给出了纯金属电阻率的一个解析表达式，理论与实验规律相符，即在高温时，电阻率与温度Ｔ成正比，低温时与Ｔ＾５成正比。     

Phonon resistivity of implanted palladium deuteride

The temperature dependent resistivity of low-temperature implanted palladium deuteride was measured. A T³ dependence was found for the low energy (acoustic) phonon contribution to the resistivity as in previous studies on implanted hydrides. Above ～ 45K, the results are analysed by assuming that the optic phonon contribution adds independently. The results (characteristic optic phonon temperature and acoustic-to-optic phonon-electron coupling ratio) agree with those obtained on electrolytically prepared samples in spite of the four fold difference in residual resistivities.     

Dynamic correlation effects on drag resistivity of a symmetric electron–electron bilayer

We have studied the effect of dynamic electron correlations on Coulomb drag in a low density symmetric electron–electron bilayer. The drag resistivity is calculated considering the contribution from direct e–e scattering processes using the semi-classical Boltzmann approach, with the effective inter-layer interaction W₁₂(q, ω; T) determined within the ?wierkowski, Szyman?ki, and Gortel model, generalized to include the dynamics of electron correlations through the frequency-dependent intra- and inter-layer local-field correction (LFC) factors. In turn, the LFCs are obtained by extending the quantum Singwi, Tosi, Land, and Sjölander (qSTLS) approach to finite temperatures. At low temperatures (T ? 2 K), the calculated drag resistivity is found to agree nicely with the measurements by Kellogg et al., while it is somewhat overestimated at higher temperatures. The overestimation is seen to increase with decreasing density of electrons. However, there is found to be a marked improvement over the predictions of the conventional (i.e., static) STLS and random-phase approximation (RPA). It turns out that the inclusion of exchange-correlations in the RPA causes a red-shift in the bilayer plasmons which leads to an enhancement of drag resistivity. Our study demonstrates clearly the importance of including the dynamical nature of correlations to have a reasonable account of measured drag resistivity.     

Phonon images of crystals

Using the pair of coupled Boltzmann kinetic equations for 2D electron gas and bulk acoustic phonons we derive the explicit formula for the phonon drag voltage induced by a pulsed phonon beam. A point source producing very short bursts of monoenergetic phonons is considered. The time integrated signal of the phonon drag voltage is calculated numerically for 2D electron gas lying in a {001} plane. For the raster scanned source of phonons the pattern of induced voltage is obtained and compared to the suitable experimental pattern and to the calculated quasimomentum focusing image. For several phonon propagation directions the dependency of induced voltage on the phonon energy is studied and compared with the experimental results. The ratio of the strength of piezo-electric coupling to the deformation potential constant and the localization length of 2D electrons are fitted.     

Phonon resistivity in concentrated aluminium alloys

The resistivity of aluminum based alloys containing V, Fe, Co, Ni and Cu has been measured between 4.2 and 100°K. The wide range of concentrations covered by our samples was obtained by the use of a rapid quenching technique, and the highest impurity resistivity is more than one order of magnitude higher than the interval previously explored.It is found that previous observations of a phonon resistivity varying as T³ and depending only on the impurity resistivity are still valid also in this range.     

Phonon focusing and electron–phonon drag in semiconductor crystals with degenerate charge-carrier statistics

We study the effect of anisotropy in elastic properties on the electron–phonon drag and thermoelectric phenomena in gapless semiconductors with degenerate charge-carrier statistics. It is shown that phonon focusing leads to a number of new effects in the drag thermopower at low temperatures, when diffusive phonon scattering from the boundaries is the predominant relaxation mechanism. We analyze the effect of phonon focusing on the dependences of the thermoelectromotive force (thermopower) in HgSe:Fe crystals on geometric parameters and the heat-flow directions relative to the crystal axes in the Knudsen regime of the phonon gas flow. The crystallographic directions that ensure the maximum and minimum values of the thermopower are determined and the role of quasi-longitudinal and quasi-transverse phonons in the drag thermopower in HgSe:Fe crystals at low temperatures is analyzed. It is shown that the main contribution to the drag thermopower comes from slow quasi-transverse phonons in the directions of focusing in long samples.     

Electrical transport and magnetic ordering in R 2Ti3Ge4 (R=Dy, Ho and Er) compounds

New R ₂Ti₃Ge₄ (R=Dy, Ho and Er) intermetallic compounds have been synthesized and characterized by X-ray diffraction and low temperature ac magnetic susceptibility, electrical resistivity and thermoelectric power measurements were carried out. The compounds crystallize in the parent, Sm₅Ge₄-type orthorhombic structure (space group Pnma) and lanthanide contraction is observed as one moves along the rare-earth series. The changeover from paramagnetic to antiferromagnetic phase happens at low temperatures and the ordering temperature scales with the de Gennes factor. The electrical resistivity is metallic with a negative curvature above 100 K. Thermopower displays a weak maximum at temperatures less than 50 K signifying the possible phonon and magnon drag effects.     

Temperature dependence of thermal and electrical conductivity of Bi-based high-Tc (2 2 2 3) superconductor

Superconducting samples with nominal composition Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_δ were prepared by the conventional solid-state reaction technique. The samples have been characterized by X-ray diffraction, dc electrical resistivity, ac magnetic susceptibility and thermal conductivity. The X-ray diffraction studies were done at room temperature and the lattice constants of the material were determined by indexing all the peaks. All the above measurements show that, there exists two phases i.e. high-T_c (2 2 2 3) and low-T_c (2 2 1 2). The information obtained from dc electrical resistivity data agrees with ac magnetic susceptibility measurements. The onset temperature T_c (onset) and zero resistivity temperature T_c (R = 0) of the samples remains within the temperature 120 ± 1 K and 103 ± 1 K. Thermal conductivity has been measured with a transient plane source (TPS) technique in the temperature range 77–300 K. The estimation of the electrical resistivity change due to scattering by phonons and impurities has been discussed. An increase in thermal conductivity is observed above and below T_c (R = 0). The electron–phonon scattering time, phonon-limited mobility and the size of the electron–phonon constant are also calculated. Wiedemann–Franz law is applied to gain prediction about the magnitude of electronic and phonon contribution to the total thermal conductivity of the samples. It is observed that heat is mainly conducted by the phonons in this system.     

新型超导体MgB2的热电势和电阻率研究

测量了MgB₂的热电势和电阻率与温度的依赖关系.在100K—300K区间,热电势呈近似线性温度依赖关系,其斜率为正,表明载流子为空穴型且与能带贡献的图像相一致.与此对应,在此温区电阻率呈T²依赖关系.在100K以下,热电势和电阻率各自转变了其高温区的温度依赖关系.热电势在超导转变温度T_c(零电阻366K)到100K间有一宽峰,具有声子曳引峰的特征,表明电子-声子相互作用很强.估算了一些重要的参数,如带米能E_F、能带宽度 关键词： 新型超导体 热电势 电阻率