Investigation of the surface topography for the characterization of microstructures of amorphous SiNx-coatings

SiN(x)-coatings have been deposited by reactive magnetron sputtering. Gas pressure and film thickness have been varied. Scanning electron microsopic views of the cross sections show a columnar structure as well as polycrystalline films varying with deposition parameters. For quantitative comparisons of the film morphology an average column diameter has been used as a characteristic value obtained from TEM images. Similar results have been obtained by scanning tunneling microscope avoiding a large expenditure of preparation. Scanning tunneling microscopy is suitable for investigations of the fractal nature of top surface of thin films and to determine the height function of thin SiN(x)-coatings on silicon wafers directly. Computer simulations of sputter processes allow to discuss the evolution of microstructures qualitatively.     

Effects of post-deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure

To systematically evaluate the quality of SiN_x films in multi-stacked structures, we investigated the effects of post-deposition annealing (PDA) on the film properties of SiN_x within the SiO₂/SiN_x/SiO₂/Si stacked structure by performing X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier transform infrared (FT-IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM-EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiN_x layer. In particular, new finding is that Si-rich SiN_x in the SiN_x layer is preferentially oxidized by PDA even in multi-stacked structure. The XRR results showed that the SiN_x layer becomes thinner, whereas the interface layer between the SiN_x layer and Si becomes thicker. It is concluded by STEM-EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiN_x films in stacked structures from various perspectives.     

Comparative composition analysis of SiOx and SiNx thin films by AES,EDX and RBS

The chemical composition of thin films in SiO_x and SiN_x systems (“SIPOS”) have been analyzed by comparative AES, EDX, and RBS of the same samples to assess the extent of possible errors introduced by the “weak points” of each method. These exist for EDX in the necessity of a thickness correction, for AES in a possible composition dependence of the sensitivity factors, and for RBS in the low sensitivity in detecting light elements. Linear correlations between the data obtained by RBS and EDX have been revealed over the whole range of x. Therefore, EDX can be calibrated by appropriate standards of pure SiO₂ or Si₃N₄ films. For AES analysis a calibration curve is needed. Using RBS data for calibration the content of the light components O and N might be slightly overestimated by this method.     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

Surface-near analyses of ultra thin silicon nitride layers by NRA, channeling RBS, FT IR ellipsometry and AFM

Homogeneous ultra thin silicon nitride layers (SiN_x layers) close to the surface have been produced by 10 keV ¹⁵N ₂ ⁺ molecular ion implantation and an ion current density of 10 A/cm², into single crystal silicon at room temperature. Stoichiometric SiN_x layers with thicknesses of about 28 nm (analyzed by NRA) were obtained at fluences of 1.5×10¹⁷ at/cm². NRA analyses of samples annealed by EB-RTA at T=1150° C for 15 s indicated that the N/Si ratio and the layer thickness did not change drastically. FT IR ellipsometry analyses indicated the existence of Si₃N₄ bonds in as-implanted specimens. A disordered Si layer (d-Si, typically 15 nm thick) underneath the implantation region caused by the ion implantation was found by channeling RBS analyses. The d-Si layer partly recrystallized during EB-RTA showing a thickness of 6 nm afterwards. The SiN_x layers showed no decomposition and detachment after EB-RTA. Due to EB-RTA, however, the smooth surface of the as-implanted specimens changed into a surface with remaining whisker-like structures surrounded by circular recesses as shown by AFM analyses. A model for the growth of these whisker-liker structures caused by low energy ion implantation and EB-RTA is presented on the basis of the thickness of the SiN_x layer, the existence of the d-Si layer and the special annealing process.     

Room temperature ferromagnetism in Mn-doped ZnS nanocrystalline thin films grown by sol–gel dip coating process

Nanocrystalline Zn_1?xMn_xS (x = 0.00, 0.01, 0.02, 0.03, 0.05, and 0.1) thin films having different Mn content were grown by the sol–gel dip coating process. The effect of Mn content on the structural, optical and magnetic properties of Zn_1?xMn_xS nanocrystalline thin films were investigated. X-ray diffraction results showed the presence of single hexagonal phase corresponding to ZnS with a preferred orientation along the ZnS (002) hexagonal plane direction without any detectable secondary phase, suggesting the incorporation of Mn ions into the ZnS lattice. Scanning electron microscope revealed the surface of the nanocrystalline films to be homogeneous and dense and the grains of the film surface were randomly scattered. In ultraviolet–visible measurements, the band gap energy corresponding to the absorption edge estimated were found to be 3.59–3.23 eV depending on the Mn doping ratio. Magnetic measurements showed that a paramagnetic behavior at 5 K and ferromagnetic behavior at 300 K.     

Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

Nitrogen doped zinc oxide (ZnO) nanoparticles have been synthesized using a colloidal route and low temperature nitridation process. Based on these results, 200 nm thick transparent ZnO thin films have been prepared by dip-coating on SiO₂ substrate from a ZnO colloidal solution. Zinc peroxide (ZnO₂) thin film was then obtained after the chemical conversion of a ZnO colloidal thin film by H₂O₂ solution. Finally, a nitrogen doped ZnO nanocrystalline thin film (ZnO:N) was obtained by ammonolysis at 250 °C. All the films have been characterized by scanning electron microscopy, X-ray diffraction, X-Ray photoelectron spectroscopy and UV–Visible transmittance spectroscopy.     

Preparation,characterization and luminescence of transparent thin film of ionogels

The sol–gel fabrication of luminescent and transparent thin film of ionogels containing trivalent lanthanide complexes have been obtained from the silylated ionic liquid in the presence of lanthanide salts (Ln³⁺, Ln=Tb and Eu) and organic ligands. The resulting thin films were investigated by FT-IR spectroscopy, scanning electron microscopy and luminescence spectroscopy. FT-IR spectra reveal the hydrolysis and condensation of the silylated ionic liquid as well as the formation of luminescent lanthanide complexes in the thin films. Scanning electronic microscope images show the homogeneous characteristic of the thin films.     

Structural,compositional and hardness properties of hydrogenated amorphous carbon nitride thin films synthesized by dense plasma focus device

The hydrogenated amorphous carbon nitride (a‐CN_x:H) thin films were synthesized on the SS‐304 substrates using a dense plasma focus device. The a‐CN_x:H thin films were synthesized using CH₄/N₂ admixture gas and 20 focus deposition shots on substrates placed at different distances from the anode top. X‐ray photoelectron spectroscopy and Raman analysis confirmed different C–N bonding in the a‐CN_x:H thin films. A decrease in the N/C ratio as well as the sp³/sp² ratio with an increase in the substrate distance has been observed. The higher amount of C–N formation for the film synthesized at 10 cm is observed which decreases with increasing distance. The X‐ray photoelectron spectroscopy and Raman analysis affirmed the C ≡ N presence in all the thin films synthesized at different distances. The morphology of the synthesized a‐CN_x:H thin films showed nanoparticles and nanoparticle clusters formation at the surface. The hardness results showed comparatively lower hardness of the a‐CN_x:H thin films due to the presence of C ≡ N. The C–N formation with lower amount of C ≡ N and a higher N/C ratio as well as a higher sp³/sp² ratio for the films synthesized at 10 cm show reasonably higher hardness. Copyright © 2016 John Wiley & Sons, Ltd.     

Comparative composition analysis of SiOx and SiNx thin films by AES, EDX and RBS

The chemical composition of thin films in SiO_x and SiN_x systems (SIPOS) have been analyzed by comparative AES, EDX, and RBS of the same samples to assess the extent of possible errors introduced by the weak points of each method. These exist for EDX in the necessity of a thickness correction, for AES in a possible composition dependence of the sensitivity factors, and for RBS in the low sensitivity in detecting light elements. Linear correlations between the data obtained by RBS and EDX have been revealed over the whole range of x. Therefore, EDX can be calibrated by appropriate standards of pure SiO₂ or Si₃N₄ films. For AES analysis a calibration curve is needed. Using RBS data for calibration the content of the light components O and N might be slightly overestimated by this method.     

Iodine- and Bromine-Based Dry Etching of LaCaMnO3

Two novel plasma chemistries, BI ₃ and BBr ₃ , have been employed for dry etching of LaCaMnO ₃ thin films. For both mixtures there is some chemical enhancement of etch rates at low halide compositions in the discharge, and the rates are a strong function of ion/neutral ratio. Maximum rates are obtained at ratios near 0.02. Etch yields are typically low (<0.3) under inductively-coupled plasma (CICP) conditions. Smooth _d surface morphologies are obtained over a wide range of conditions, with high-fidelity pattern transfer using SiO ₂ or SiN _x masks.     

In situ FTIR spectroscopic studies of CO adsorption on electrodes with nanometer-scale thin films of ruthenium in sulfuric acid solutions

A nanometer-scale thin film of ruthenium supported on glassy carbon (nm-Ru/GC) was prepared by electrochemical deposition under cyclic voltammetric conditions. Scanning tunneling microscopy (STM) was used to investigate the structure and to measure the thickness of the thin film. It has been found that the Ru thin film is composed of layered Ru crystallites that appear in a hexagonal form with dimensions of about 250 nm and thickness around 30 nm. In situ FTIR spectroscopic studies demonstrated that such a nanostructured Ru thin film exhibits abnormal infrared effects (AIREs) for CO adsorption (G.Q. Lu et al., Langmuir 16 (2000) 778). In comparison with CO adsorbed on a massive Pt electrode, the IR absorption of CO_ad on nm-Ru/GC was significantly enhanced. Moreover, the direction of CO_ad bands is inverted and the full width at half maximum of CO_ad bands is increased. It has been revealed that the enhancement factor of IR absorption of CO adsorbed on nm-Ru/GC electrodes depends strongly on the thickness of the Ru film. An asymmetrical volcano relationship between the enhancement factor and the thickness of the Ru film has been obtained. The maximum value of the enhancement factor was measured as 25.5 on a nm-Ru/GC electrode of Ru film thickness around 86 nm. The present study has contributed to exploration of the particular properties of nanostructured Ru film material and to the origin of the abnormal infrared effects.     

Room-Temperature Silicon Nitrides Prepared with Very High Rates (>50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma

We have investigated the structure and stability of SiN _x films deposited with very high rates (>50 nm/s) in atmospheric-pressure (AP) He-based plasma excited by a 150 MHz very high-frequency (VHF) power using a cylindrical rotary electrode at room temperature. The SiN _x films are prepared on Si(001) substrates with varying VHF power density (P _VHF), H₂ concentration and source ratio (NH₃/SiH₄). Infrared absorption spectroscopy is used to analyze the bonding configurations in the films. The results show that increasing H₂ concentration under the supply of a moderately large P _VHF, together with the adjustment of NH₃/SiH₄ ratio, enables us to prepare SiN _x showing reasonable stability against a buffered hydrofluoric acid solution in spite of the very high deposition rate of 130 nm/s. The achievement of such a high-rate deposition at room temperature is primarily due to the significant enhancement of both gas-phase and surface-phase reactions in AP-VHF plasma.     

Fabrication and optical conductivities of strained epitaxial NaxCoO2 thin films: x=0.5, 0.7

Epitaxial γ phase-Na_xCoO₂ thin films were deposited on (001) sapphire by the pulsed laser deposition method. To fabricate epitaxial Na_0.5CoO₂ thin films, we used a solution of iodine-dissolved acetonitrile and obtained an epitaxial Na_0.5CoO₂ thin film with a high crystallinity because of Na deintercalation of epitaxial Na_0.7CoO₂. From the spectroscopic ellipsometry analysis, we obtained the optical constants as well as the optical conductivities for the Na_0.5CoO₂ and Na_0.7CoO₂ thin films. The energy splitting between e_g and a_1g increased because of the structural strain of the Na_0.7CoO₂ thin film. It is inferred that the structural strain is the source for the lower resistivity and the preservation of the strongly correlated system up to 200 K for the Na_0.7CoO₂ thin film. On the other hand, the strain in the Na_0.5CoO₂ thin film was not affected, and the charge-ordering state and the Na content (x=0.5) only cause the charge-ordering state.     

Development of Hybrid BiOClxBr1−x‐Embedded Alumina Films and Their Application as Highly Efficient Visible‐Light‐Driven Photocatalytic Reactors

A highly stable 75 wt % BiOCl_xBr_1?x‐loaded alumina composite film has been developed for the fabrication of glass‐based photoreactors. A very simple approach has been adopted that does not involve the use of a special instrument and can be applied to all types of substrates irrespective to their size and shape. The structure and morphology of the films were well characterized by XRD, SEM, TEM, N₂‐sorption, IR, Raman, and UV/Vis diffuse reflectance spectroscopy. BiOCl_xBr_1?x microspheres (1–3 μm) with closely packed thin nanoplates (width ≈10 nm) were integrated within alumina to develop a hybrid film. The photocatalytic capacity of the films was evaluated for the decomposition of Rhodamine B (RhB) and naphthalene under visible‐light irradiation. The composite films showed a remarkable photocatalytic activity and stability and have been reused for several cycles without any deterioration of their original activity.     

Improvement of the oxidation behavior of Ti1-xAlxN hard coatings by optimization of the Ti/Al ratio

The oxidation behavior of cubic Ti_1-xAl_xN films was improved by decreasing the Ti/Al ratio from 50/50 in the direction of the phase transition between cubic and hexagonal structure. Metastable, polycrystalline, single-phase Ti_1-xAl_xN films were deposited on high speed steel (HSS) substrates by reactive magnetron sputtering ion plating (MSIP). The composition of the bulk was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). A Ti_1-xAl_xN film with a Ti/Al atomic ratio of 38/62 was deposited in cubic NaCl structure, whereas a further decrease of the Ti/Al ratio down to 27/73 led to a two-phase film with both cubic and hexagonal constituents. The Ti_0.38Al_0.62N film was oxidized in synthetic air for 1 h at 800?°C. The oxidic overlayer was analyzed by X-ray photoelectron spectroscopy (XPS) sputter depth profiling, EPMA crater edge linescan analysis, and secondary neutrals mass spectroscopy (SNMS). Scanning electron microscopy (SEM) micrographs of the cross sectional fracture were taken for morphological examination. With higher Ti content, the Ti_1-xAl_xN formed a TiO_2-x rich sublayer beneath an Al₂O₃ rich toplayer, whereas the oxide layer on the Ti_0.38Al_0.62N film consisted of pure Al₂O₃. The thickness of the oxide layer was determined to 60–80 nm, about a quarter of the oxide layer thickness detected on Ti_0.5Al_0.5N films. The absence of a TiO_2-x sublayer was also confirmed by XRD. The results show a distinct improvement of the oxidation resistance of cubic Ti_1-xAl_xN films by increasing the Al content from x = 0.5 to 0.62, whereas a further increase leads to the hexagonal structure, which is less suitable for tribological applications due to its tendency to form cracks during oxidation.     

Influence of YSZ buffer layer on the electric properties of compositionally graded (Ba,Sr)TiO<Subscript>3</Subscript> thin film

Compositionally graded Ba_1−x Sr _x TiO₃ (BST) (0 ≤ x ≤ 0.4) thin films were fabricated on Pt/Ti/SiO₂/Si and YSZ/Pt/Ti/SiO₂/Si substrates by a modified sol–gel technique. The YSZ buffer layer was prepared by RF magnetron sputtering. The microstructure of the graded BST films was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The results showed that all the films have uniform and crack-free surface with a perovskite structure. The graded BST film with an YSZ buffer layer has larger dielectric constant and lower dielectric loss. The leakage current density of the graded BST film with an YSZ buffer layer lowers two orders than the film without buffer layer. The improved electric properties of the graded films with an YSZ buffer layer was attributed to the YSZ buffer layer act as an excellent seeding layer to enhance the graded BST film growth.     

Fabrication and properties of xBiFeO3-(1 − x)Bi4Ti3O12 system by sol–gel process

The thin films of mixture of xBiFeO₃-(1 − x)Bi₄Ti₃O₁₂ (x = 0.4, 0.5, and 0.6) system were prepared by a sol–gel process. The thicknesses of the thin films were 540, 500, and 570 nm, respectively. The crystal structure of all thin films annealed at 650 °C was analyzed by X-ray diffraction. It was found that the thin films at x = 0.4 and 0.5 mainly consisted of a Bi₄Ti₃O₁₂ phase while Bi₅Ti₃FeO₁₅ was the major phase of the thin film at x = 0.6. The thin film (x = 0.6) showed better ferroelectric properties in remnant polarization and polarization fatigue than those observed in the thin films (x = 0.4 and 0.5). The values of remnant polarization 2P _r and coercive field 2E c of the thin film at x = 0.6 were 36 μC/cm² and 192 kV/cm at an applied electric field of 260 kV/cm, respectively. There was almost no polarization fatigue up to 10¹⁰ switching cycles. Also weak ferromagnetism was observed in the thin film at x = 0.6.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Study of the structure of thin nanocrystalline films

Structure and phase composition of thin nanocrystalline films of semiconductors and insulators CdS, Cd_xZn_1?xS, SiC_xN_y, and BC_xN_y were studied using registration of weak diffraction intensities with synchrotron radiation. Three methods were developed and applied to obtain diffraction patterns, namely, θ—2-scan (Bragg—Brentano geometry); 2θ-scan (grazing incidence scheme); a scheme with an image plate as detector. The characteristic features of the diffraction patterns, obtained from the aforementioned samples, are discussed. The X-ray diffraction data are compared with the results obtained by HREM, SAED, electron spectroscopy, ellipsometry, IR and Raman spectroscopy. It is stated that: 1) the films are composed of nanocrystals, their size depending on the conditions of film deposition; 2) single crystalline substrate favors formation of oriented crystals, i.e., of the domains comprising uniformly oriented nanocrystals.