Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> powders by the complex polymerization method: synthesis,characterization and morphology

Lanthanum-modified bismuth titanate (Bi_3.25La_0.75Ti₃O₁₂, BLTO) powders were prepared by the complex polymerization method. The structure and morphology of BLTO powders were investigated by X-ray diffraction and scanning electron microscopy. The complexation of citric acid with the metallic cations was detected by Fourier transformed infrared (FT-IR). The thermal analyses of obtained gels were investigated by differential thermal gravimetric (DTG). The pure and normally stoichiometric phase of BLTO powders could be obtained at relatively low temperature of 550–700 °C even if the bismuth content is not excess in the starting precursors, while the secondary phase could be detected at lower and higher calcination temperatures. The shape of the BLTO grains is similarly to platelet in Bi-layer structure and stoichiometry BLTO was detected by the analysis of energy dispersive spectrometry.     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Low-temperature processing of sol-gel derived Pb(Zr,Ti)O<Subscript>3</Subscript> thick films using CO<Subscript>2</Subscript> laser annealing

Fabrication of ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thick films on a Pt/Ti/SiO₂/Si substrate using powder-mixing sol-gel spin coating and continuous wave CO₂ laser annealing technique to treat the specimens with at a relatively low temperature was investigated in the present work. PZT fine powders were prepared by drying and pyrolysis of sol-gel solutions and calcined at temperatures from 400 to 750°C. After fine powder-containing sol-gel solutions were spin-coated on a substrate and pyrolyzed, CO₂ laser annealing was carried out to heat treat the specimens. The results show that laser annealing provides an extremely efficient way to crystallize the materials, but an amorphous phase may also form in the case of overheating. Thicker films absorb laser energy more effectively and therefore melt at shorter periods, implying a significant volume effect. A film with thickness of 1 μm shows cracks and rough surface morphology and it was difficult to obtain acceptable electrical properties, indicating importance of controlling interfacial stress and choosing appropriate size of the mixing powders. On the other hand, a thick film of 5 μm annealed at 100 W/cm² for 15 s exhibits excellent properties (P _r = 36.1 μC/cm², E _c = 19.66 kV/cm). Films of 10 μm form a melting zone at the surface and a non-crystallized bottom layer easily at an energy density of 100 W/cm², showing poor electrical properties. Besides, porosity and electrical properties of thick films can be controlled using appropriate processing parameters, suggesting that CO₂ laser annealing of modified sol-gel films is suitable for fabricating films of low dielectric constants and high crystallinity.     

Phase-pure nanocrystalline Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript> for a lithium-ion battery

Phase-pure nanocrystalline Li₄Ti₅O₁₂ with BET surface areas between 183 and 196 m²/g was prepared via an improved synthetic protocol from lithium ethoxide and titanium(IV) butoxide. The phase purity was proved by X-ray powder diffraction, Raman spectroscopy and cyclic voltammetry. Thin-film electrodes were prepared from two nanocrystalline samples of Li₄Ti₅O₁₂ and one microcrystalline commercial sample. Li-insertion behavior of these electrodes was related to the particle size.Presented at the 3rd International Meeting on Advanced Batteries and Accumulators, 16–20 June 2002, Brno, Czech Republic     

Quantum-chemical modelling of nanotubes of titanium silicocarbides Ti<Subscript>2</Subscript>SiC,Ti<Subscript>3</Subscript>SiC<Subscript>2</Subscript>, and Ti<Subscript>4</Subscript>SiC<Subscript>3</Subscript>

Atomic models are proposed for nanotubes of the titanium silicocarbides Ti₂SiC, Ti₃SiC₂, and Ti₄SiC₃, and their electronic structure and interatomic interactions are investigated by the density functional tight-binding method (DFTB) in comparison with the corresponding crystalline phases. Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 45, No. 2, pp. 88-92, March-April, 2009.     

Dielectric properties and I-V characteristics of (Pb<Subscript>0.4</Subscript>Sr<Subscript>0.6</Subscript>)TiO<Subscript>3</Subscript> thin films improved by TiO<Subscript>2</Subscript> buffer layers

A TiO₂ thin buffer layer was introduced between the (Pb_0.4Sr_0.6)TiO₃ (PST) film and the Pt/Ti/SiO₂/Si substrate in an attempt to improve their electrical properties. Both TiO₂ and PST layers were prepared by a chemical solution deposition method. It was found that the TiO₂ buffer layer increased the (100)/(001) preferred orientation of PST and decreased the surface roughness of the films, leading to an enhancement in electrical properties including an increase in dielectric constant and in its tunability by DC voltage, as well as a decrease in dielectric loss and leakage current density. At an optimized thickness of the TiO₂ buffer layer deposited using 0.02 mol/l TiO₂ sol, the 330-nm-thick PST films had a dielectric constant, loss and tunability of 1126, 0.044 and 60.7% at 10 kHz, respectively, while the leakage current density was 1.95 × 10⁻⁶ A/cm² at 100 kV/cm.     

Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Exfoliated nanoplatelets of an Aurivillius phase, Bi3.25La0.75Ti3O12: Characterisation by X-ray diffraction and by high-resolution electron microscopy

Nanoparticles of the Aurivillius phase La-substituted BTO (Bi_4−xLa_xTi₃O₁₂, with x=0.75) were obtained through a chemical lithiation process. They have been characterised by X-ray diffraction and transmission electron microscopy (diffraction and imaging at high resolution). The defect-free particles are platelet-shaped with the c large axis perpendicular to the plane. From high-resolution images, it is clear that the delamination process occurs at the level of the (Bi₂O₂)²⁺ intermediate layer and is destructive for this layer. The smallest thickness measured corresponds to one cell parameter (3.3 nm) but a large range of thicknesses have been observed: this suggests that the lithium insertion does not take place in all (Bi₂O₂)²⁺ layers, despite a large excess of lithium and a long reaction time. This is confirmed by ICP analysis, which leads to a formula Li_0.99Bi_3.25La_0.77Ti_3.00O₁₂ for the lithiated compound. This behaviour towards lithium intercalation differs from those observed with BTO in literature, where lithium insertion is reported as occurring in every (Bi₂O₂)²⁺ layer. Possible explanations for this difference are advanced based on microstructural and structural considerations.     

Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O<Subscript>3</Subscript> and Pb (Nb,Zr,Sn,Ti)O<Subscript>3</Subscript> antiferroelectric thin films deposited on LaNiO<Subscript>3</Subscript>-buffered silicon substrates by sol-gel processing

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O₃ (PLZST) and Pb(Nb,Zr,Sn,Ti)O₃ (PNZST) thin films have been fabricated on LaNiO₃/Pt/Ti/SiO₂/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field.     

Sol-gel processing of lead-free (Na,K)NbO<Subscript>3</Subscript> ferroelectric films

The sol-gel processing of lead-free (Na,K) NbO₃ ferroelectric films was studied. Sodium ethoxide (NaOC₂H₅) and potassium ethoxide (KOC₂H₅) were prepared by reacting solid Na and K with ethanol (99.7%) in a solvent of 2-methoxyethanol. 0.5-μm-thick (Na,K)NbO₃ thin films with orthorhombic perovskite structure were obtained by pyrolyzing at 400°C and annealing at 800–900°C. The films had relatively dense and uniform microstructure with grain size of about 50 nm, whose ferroelectricity was proved by the P-E hysteresis loop measurement. It was found that excess K was effective to reduce the annealing temperature for the crystallization of sol-gel-derived (Na,K)NbO₃ thin films.     

Microwave-assisted combustion synthesis of nanocrystalline La<Subscript>2</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> oxide-ion conductor and its characterization

Nanocrystalline La₂Mo₂O₉ oxide-ion conductor has been successfully synthesized by microwave-assisted combustion method within a very short time duration using aspartic acid as the newer fuel in a domestic microwave oven. The synthesized nanocrystalline powder showed good sinterability and reached more than 97% of theoretical density even at low temperature of 800 °C for 5 h. The sintered La₂Mo₂O₉ sample exhibited a conductivity of 0.159 S/cm in air at 750 °C.     

Sol-coated preparation and characterization of macroporous α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> membrane support

A simple approach namely sol-coated technique has been developed for the low cost fabrication of macroporous ceramic under a far below common sintering temperature of alumina with large dimension grains. The prepared green support shows higher sinteractive than the one treated by wet impregnation method under the same sintering conditions. The support possesses great potential applications with 6.63–7.71 μm in pore size, 39% open porosity as well as >45 MPa mechanical strength at the sintering temperature range of 1350°– 1500°C. The results indicate that the nitrogen gas flux and pure water permeation value was 51 252.35 m³ m⁻² h⁻¹ bar⁻¹, 98.43 m³ m⁻² h⁻¹ bar⁻¹, respectively, which were more dependent on the pore structure and pore size distribution than open porosity.     

Preparation and characterization of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript>composite particles

Using Fe₃O₄ nano-particles as seeds, a new type of Fe₃O₄/Au composite particles with core/shell structure and diameter of about 170 nm was prepared by reduction of Au³⁺ with hydroxylamine in an aqueous solution. Particle size analyzer and transmission electron microscope were used to analyze the size distribution and microstructure of the particles in different conditions. The result showed that the magnetically responsive property and suspension stability of Fe₃O₄ seeds as well as reduction conditions of Au³⁺to Au⁰are the main factors which are crucial for obtaining a colloid of the Fe₃O₄/Au composite particles with uniform particle dispersion, excellent stability, homogeneity in particle sizes, and effective response to an external magnet in aqueous suspension solutions. UV-Vis analysis revealed that there is a characteristic peak of Fe₃O₄/Au fluid. For particles with d(0.5)=168 nm, the λmax is 625 nm.     

Preparation and electrical properties of Nd and Mn co-doped Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> thin films

Ferroelectric thin films of Nd and Mn co-doped bismuth titanate, Bi_3.15Nd_0.85Ti_3−x Mn _x O₁₂ (BNTM) (x = 0–0.1), were fabricated on Pt/TiO₂/SiO₂/Si(100) substrates by a sol–gel technique. The BNTM films had a polycrystalline perovskite structure and uniform and dense surface morphologies. A lattice distortion was observed in the BNTM films due to Mn ion doping. The ferroelectric measurement of the films indicated that the values of coercive field (E _c ) decreased gradually with the increase of the Mn content (x), however, the remanent polarization (P _r ) increase firstly and then decrease with the increase of x. The sample with x = 0.05 had optimum electrical properties and a maximum 2P _r value. The 2P _r and 2E _c values of the film at a maximum applied electric field of 400 kV/cm were 38.3 μC/cm² and 180 kV/cm, respectively. Moreover, this BNTM capacitors did not show fatigue behaviors after 1.0 × 10¹⁰ switching cycles at a frequency of 1 MHz, suggesting a fatigue-free character. The main reason for the increase of the 2P _r and the decrease of the 2E _c might be attributed to the lattice distortion in BNTM films due to Mn ion doping.     

The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Phase relations in the CoO–V<Subscript>2</Subscript>O<Subscript>5</Subscript>–Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> system in subsolidus area

Thermal properties of Co₂FeV₃O₁₁ have been reinvestigated. It has been proved that this compound does not exhibit polymorphism. It melts incongruently at the temperature of 770±5°C and the phase with lyonsite type structure is the solid product of this melting. Phase relations in the whole subsolidus area of the CoO–V₂O₅–Fe₂O₃ system have been determined. The solidus area projection onto the component concentration triangle plane of this system has been constructed using the DTA and XRD methods. 15 subsidiary subsystems can be distinguished in this system.     

Preparation of Ba(Ti,Sn)O<Subscript>3</Subscript> thin films by PVP-assisted sol–gel method and their dielectric properties

Ba(Ti_1−x Sn _x )O₃ (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO _x /SiO₂/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates, however, tended to have small SnO₂ and BaCO₃ diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.     

Preparation of Ca<Subscript>3</Subscript>Co<Subscript>4</Subscript>O<Subscript>9</Subscript> by polyacrylamide gel processing and its thermoelectric properties

Ca₃Co₄O₉ powder was prepared by a polyacrylamide gel route in this paper. The effect of the processing on microstructure and thermoelectric properties of Ca₃Co₄O₉ ceramics via spark plasma sintering were investigated. Electrical measurement shows that the Seebeck coefficient and conductivity are 170 μV/K and 128 S/cm, respectively, at 700 °C, yielding a power factor value of 3.70 × 10⁻⁴ W m⁻¹ K⁻² at 700 °C, which is larger than that of Ca₃Co₄O₉ ceramics via solid-state reaction processing. The polyacrylamide gel processing is a fast, cheap, reproducible and easily scaled up chemical route to improve the thermoelectric properties of Ca₃Co₄O₉ ceramics by preparing the homogeneous and pure Ca₃Co₄O₉ phase.