Thermoelectric properties of SnzCo8Sb24 skutterudites

Sn-filled CoSb₃ skutterudite compounds were synthesized by the induction melting process. Formation of a single δ-phase of the synthesized materials was confirmed by X-ray diffraction analysis. The temperature dependences of the Seebeck coefficient, electrical resistivity and thermal conductivity were examined in the temperature range of 300-700 K. Positive Seebeck and Hall coefficients confirmed p-type conductivity. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled CoSb₃ skutterudite is a degenerate semiconductor. The thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. The lowest thermal conductivity was achieved in the composition of Sn_0.25Co₈Sb₂₄.     

Synchrotron X-ray study of filled skutterudites CeFe4Sb12 and Ce0.8Fe3CoSb12

In situ synchrotron X-ray diffraction measurements are carried out on filled skutterudites CeFe₄Sb₁₂ and Ce_0.8Fe₃CoSb₁₂ up to 32 and 20 GPa, respectively, at room temperature. No phase transformation was observed for both samples in the pressure range. Fitting the pressure-volume data (up to 10 GPa) to the third-order Birch-Murnaghan equation of state, the bulk modulus B₀ is determined to be 74(4) GPa, with the pressure derivative B′₀=7(2) for CeFe₄Sb₁₂, and B₀=71(2) GPa and B′₀=8(2) for Ce_0.8Fe₃CoSb₁₂. The bulk moduli of filled skutterudites CeFe₄Sb₁₂ and Ce_0.8Fe₃CoSb₁₂ in our study are smaller than those from previous studies on unfilled skutterudite CoSb₃. The P-V curves of the unfilled skutterudite CoSb₃ and filled skutterudites Ce_yFe_4−xCo_xSb₁₂ showed good agreement, indicating that the Ce filling fraction and the replacement of Fe with Co have little effect on their compression behaviors.     

Enhancement of thermoelectric performance with pressure in Ce0.8Fe3CoSb12.1

Transport properties (resistivity, thermal conductivity, and Seebeck coefficient) and sound velocities have been determined for the skutterudite Ce_0.8Fe₃CoSb_12.1 with pressure up to 14 GPa. From these measurements, high pressure anomalous features were found in all transport properties. By correlating these with results from previous x-ray work, it has been determined that there is likely an electronic topological transition in this material induced by pressure. This is possibly due to the known pressure variation of valence in the void-filling Ce atom and has been found to induce an improved figure of merit at higher pressures, which shows a nearly two-fold increase with applied pressure. At higher pressures, it was determined that this anomalous behavior is suppressed and is possibly induced by insertion of Sb from the cage into the remaining central voids of the structure, similar to that seen in the CoSb₃ parent compound.     

A study of electronic structure and lattice dynamics of CoSb3 skutterudite

The novel filled skutterudite materials have attracted much interest in recent years and experimental studies have revealed that electrical properties (electrical conductivity and Seebeck coefficient) in these materials are dominated by their electronic structure while the effective suppression of thermal conductivity is mainly determined by their lattice dynamics. To clarify the relationship between microstructure and properties in further, we report a systematic study of electronic structures and lattice dynamics of CoSb₃ in this paper using linearized augmented plane waves based on the density functional theory of first principles. By calculating band structure and partial density of states (PDOS), effects of electronic structures of CoSb₃ on electrical properties were investigated. Based on the calculated results of phonon dispersions and phonon density of states of CoSb₃, lattice dynamics of CoSb₃ (heat capacity, Debye temperature, mean free path and lattice thermal conductivity) are discussed in detail. The calculated results are excellently consistent with other work and experimental data.     

The preparation and characterization of the cobalt skutterudites CoP3, CoAs3 and CoSb3

Single crystals of the cobalt skutterudites CoP₃, CoAs₃ and CoSb₃ have been prepared by the chemical vapor transport technique using chlorine as the transport agent. Chemical analysis and density measurements were used to determine accurately the stoichiometry of these crystals. Physical properties of chemically pure single crystals were obtained by X-ray diffraction, magnetic susceptibility and electrical measurements. CoP₃ is a diamagnetic semiconductor with an optical band gap of 0.45 eV. CoAs₃ and CoSb₃ are also diamagnetic and show an increase in their resistivity as a function of increasing temperature. In addition, they do not give any measurable absorption edge but absorb radiation at all frequencies from 0.4 to 4.3 eV.     

Growth and thermal stability of epitaxial BiFeO3 thin films

We have investigated the oxygen pressure and the temperature dependence on BiFeO₃ thin films deposited on SrTiO₃ substrates by pulsed laser deposition. Reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction measurements indicate that high-quality epitaxial thin films are obtained for and T=650 °C. Outside of this pressure-temperature window, parasitic peaks attributed to β-Bi₂O₃ appear. We find an increase of the out-of-plane lattice parameter with oxygen pressure that we ascribe to Bi-deficiency due to its high volatility at low pressure. Ex-situ anneals have been performed and results show that as-grown single-phase BiFeO₃ thin films degrade after annealing, whereas as-grown BiFeO₃ containing impurity phases evolve toward a single-phase structure. These experiments demonstrate that parasitic phases can stabilize compounds which are usually unstable in air at elevated temperatures.     

Hyperfine interactions in some Aurivillius Bim+1Ti3Fem−3O3m+3 compounds

X-ray diffraction and Mössbauer spectroscopy were applied as complementary methods to investigate the structure and hyperfine interactions in the series of Bi_m+1Ti₃Fe_m−3O_3m+3 Aurivillius compounds with m=4, 6, 7 and 8. Samples were synthesized by the solid-state sintering method at various temperatures. As X-ray diffraction analysis proved, the compounds formed single phases at temperature above 993 K. Mössbauer studies have confirmed diffraction measurements. Compounds synthesized at 993 K contained residual hematite, however these sintered at elevated temperatures were single-phased materials. Room-temperature Mössbauer spectra of Bi_m+1Ti₃Fe_m−3O_3m+3 compounds revealed their paramagnetic properties, what is consistent with the literature data concerning the Néel temperature of these ceramics (T_N is smaller than room temperature). Detailed analysis of MS spectra allowed to state that iron ions may occupy both tetrahedral and octahedral sites in the crystallographic lattice of Aurivillius compounds.     

高压合成La填充型CoSb3方钴矿热电材料及其电输运性能

 采用高温高压手段,在压力3.5 GPa、温度900 K的条件下,成功合成出La填充型方钴矿热电材料La_xCo₄Sb₁₂（0相似文献   

致密度对填充skutterudite化合物La0.75Fe3CoSb12热电性能的影响

研究了致密度对填充skutterudite化合物La_0.75Fe₃CoSb₁₂热电性能的影响.La_0.75Fe₃CoSb₁₂表现为p型传导，载流子迁移率随着致密度的增加而升高.由于样品中空洞的散射作用，致使电阻率ρ随着致密度的降低而升高，同时造成热导率κ的下降，但塞贝克系数α与致密度关系不大，致密度造成电阻率ρ升高的比率与热导率κ下降的比率相当，致密度不同的样品具有相当的ZT 关键词： 致密度 填充式skutterudite化合物 热电性能     

High pressure electrical transport measurements of Cs2MoS4 and KTbP2Se6 and X-ray diffraction study of Cs2MoS4

We report the results of electrical resistance measurements at high pressures on Cs₂MoS₄ and KTbP₂Se₆. The results of high pressure X-ray diffraction study of Cs₂MoS₄ are also presented. Interestingly, in the case of Cs₂MoS₄ the resistance vs. pressure follows the behavior of the absorption edge vs. pressure obtained from our optical measurements lending further support to a direct-indirect band crossing. In the case of KTbP₂Se₆,the phase transition at about 9.2 GPa is reflected in a sharp drop of the resistance. In addition we report the pressure dependence of the lattice constants as well as the equation of state of Cs₂MoS₄.     

Anomalies in low-temperature lattice parameters of ErFeO3 and ErAlO3 single crystals: correlation with magnetic properties

The paper presents the results of an experimental study of thermal expansion of isostructural orthorhombic ErFeO₃ and ErAlO₃ single crystals. Changes of lattice parameters have been investigated by X-ray measurements in the 10-300 K temperature range. Above ∼150 K, experimental results correspond well to the phonon mechanism. At low temperatures distinct anisotropic anomalies were observed in both compounds; and a correlation with the magnetic properties of the relevant ions is noted.     

氧压对SrTiO3和SrNb0.2Ti0.8O3薄膜晶格参数的影响及激光感生热电电压效应

采用脉冲激光沉积技术制备了SrTiO₃和SrNb_0.2Ti_0.8O₃薄膜.X射线衍射分析表明在LaAlO₃(100)单晶平衬底上生长的SrTiO₃及SrNb_0.2Ti_0.8O₃薄膜是沿［001］取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO₃薄膜的晶格参数减小,而SrNb_0.2Ti_0.8O₃薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO₃/SrNb_0.2Ti_0.8O₃)_L的最佳氧压为1.0×10^-2Pa.另外在LaAlO₃(100)倾斜衬底上制备的SrNb_0.2Ti_0.8O₃薄膜中观察到激光感生热电电压效应. 关键词： 0.2Ti_0.8O₃薄膜')" href="#">SrNb_0.2Ti_0.8O₃薄膜 晶格参数 激光感生热电电压 脉冲激光沉积     

Synthesis and thermoelectric properties of Cd-filled CoSb3

Cd-filled CoSb₃ samples have been synthesized by the high pressure method, and the temperature-dependent thermoelectric properties of Cd_xCo₄Sb₁₂ have been investigated from 300 to 600 K. X-ray diffraction results show that near single-phase CoSb₃ could be obtained by the high pressure method in a short time (20 min). The lattice constant increases with the increase in the Cd content. The power factor is improved and the thermal conductivity is depressed drastically by filling CoSb₃ with Cd. The maximum figure of merit reaches 0.54 at 600 K for the sample of Cd_0.38Co₄Sb₁₂, which is about four times higher than that of unfilled CoSb₃.     

Birefringence,X-ray and neutron diffraction measurements on the structural phase transitions of (CH3NH3)2 MnCl4 and (CH3NH3)2FeCl4

We used optical birefringence, X-ray and neutron diffraction methods with single crystals to study the structural phase transitions of the perowskite-type layer structures of (CH₃NH₃)₂MeCl₄ with Me=Mn, Fe. The Mn-compound shows the following structural transitions at 394 K — a continuous order-disorder phase transition from tetragonal symmetry $\text{I4}\text{mmm}$ to orthorhombic space group Abma (Cmca in reference 10); at 257 K — a discontinuous transition to a second tetragonal modification; at 95 K — a discontinuous transition to a monoclinic phase. For the Fe-compound the corresponding transition temperatures are 328 K and 231 K, respectively. A low temperature monoclinic phase could not be observed. The lattice parameters of the different modifications were determined as a function of temperature. The temperature dependent course of the order parameter has been investigated for the order—disorder transition. For both compounds, all the methods used gave the same value for the critical exponent of β = 0.315.     

Ga填充n型方钴矿化合物的结构及热电性能

用熔融退火结合放电等离子烧结(SPS)技术制备了具有不同Ga填充含量的Ga_xCo₄Sb₁₂方钴矿化合物,研究了不同Ga含量对其热电传输特性的影响规律. Rietveld结构解析表明,Ga占据晶体学2a空洞位置,Ga填充上限约为0.22,当Ga的名义组成x≤0.25时,样品的电导率、室温载流子浓度N_p随Ga含量的增加而增加,Seebeck系数随Ga含量的增加而减小. 室温下霍尔测试表明,每一个Ga授予框架0.9个电子,比Ga的氧化价态Ga³⁺小得多. 由于Ga离子半径相对较小,致使Ga填充方钴矿化合物的热导率κ及晶格热导率κ_L较其他元素填充的方钴矿化合物低. 当x＝0.22时对应的样品在300K时的热导率和晶格热导率分别为3.05Wm^-1·K^-1和 2.86Wm^-1·K^-1.在600K下Ga_0.22Co_4.0Sb_12.0样品晶格热导率达到最小,为1.83Wm^-1·K^-1,最大热电优值Z,在560K处达1.31×10^-3K^-1. 关键词： skutterudite化合物 Ga原子填充 结构 热电性能     

晶粒尺寸对CoSb3化合物热电性能的影响

系统地研究了晶粒尺寸对CoSb₃化合物热电性能的影响规律，结果表明晶粒尺寸对CoSb₃化合物的晶格热导率κ_p、电导率σ、能隙宽度E_g和Seebeck系数α有显著影响.当晶粒尺寸由微米尺度减小到纳米尺度时，晶格热导率κ_p显著降低，Seebeck系数α有较大幅度的增加，能隙宽度E_g变宽，电导率σ有一定程度的下降.平均晶粒尺寸为200nm的CoSb₃化合物在温度为700K时，ZT值达到0.43，比平均晶粒尺寸为5000nm的试样增加了4倍.     

Compression behavior of the delafossite-type metallic oxide PdCoO2 below 10 GPa

The compression behavior of delafossite-type metallic oxide PdCoO₂ below 10 GPa has been investigated by in situ high pressure X-ray diffraction measurement using synchrotron radiation. It is found that the delafossite-type structure of PdCoO₂ is stable below 10 GPa. It should be noted that compression behavior of PdCoO₂ is anisotropic. Pressure dependence of the lattice parameters indicates that the a-axis is more compressible than the c-axis. The lattice parameter ratio c/a in the hexagonal unit increases with increasing pressure. The calculated zero-pressure bulk modulus is 224 GPa. It is found that the above characteristic compression behaviors of PdCoO₂ are the same as those of the delafossite CuFeO₂. The compressibilities of the a-axis of both PdCoO₂ and CuFeO₂ are highly different although those of the c-axis are almost the same.     

Thermoelectric properties and electronic structure of Te-doped CoSb3 compounds

Co₄Sb_12−xTe_x compounds were prepared by mechanical alloying combined with cold isostatic pressing, and the effects of Te doping on the thermoelectric properties were studied. The electronic structure of Te-doped and undoped CoSb₃ compounds has been calculated using the first-principles plane-wave pseudo-potential based on density functional theory. The experimental and calculated results show that the value of the solution limit x of Te in Co₄Sb_12−xTe_x compounds is between 0.5 and 0.7. The Fermi surface of CoSb₃ is located between the conduction band and the valence band, and its electrical resistivity decreases with increasing temperature. The density of states is mainly composed of Co 3d and Sb 5p electrons for intrinsic CoSb₃.The Fermi surface of Te-doped compounds moves to the conduction band and its electrical resistivity increases with increasing temperature, exhibiting n-type degenerated semiconductor character. Under the conditions of the experiment, the maximum value 2.67 mW/m K² of the power factor for Co₄Sb_11.7Te_0.3 is obtained at 600 K; this is about 14 times higher than that of CoSb₃.     

Hexagonal to cubic phase transition in YH3 under high pressure

X-ray diffraction studies on bulk yttrium trihydride, in a diamond anvil cell, have been carried out up to 25 GPa. Pressure induced hexagonal-to-cubic phase transformation in YH₃ has been found at pressure of about 8 GPa. The lattice parameter of the new cubic phase was determined as equal to 5.28 Å. This finding confirms the theoretical predictions based on first principle calculations of such a transformation. Equations of state have been determined for both the hexagonal hcp and cubic fcc YH₃ phases. As compared to the pure yttrium metal, bulk modulus for YH₃ is about four times bigger. The similarity of this transition to that observed in the other 4-f trivalent hydrides has been discussed.