Sol-gel preparation and photoluminescence property of YBO3:Eu/Tb nanocrystalline thin films

YBO₃:Eu³⁺/Tb³⁺ nanocrystalline thin films were successfully deposited onto quartz glass substrates by Pechini sol-gel dip-coating method, using rare-earth nitrates and boric acid as starting materials. The crystal structure, morphology, chemical composition and photoluminescence property of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) spectroscopy and fluorescence spectrophotometer. The results of XRD, AFM, XPS and FTIR revealed that the films were composed of spherical YBO₃:Eu³⁺/Tb³⁺ nanocrystals with average grain size of 80 nm. The YBO₃:Eu³⁺ film exhibited strong orange emission at 595 nm and red emission at 615 nm, which were, respectively ascribed to the (⁵D₀→⁷F₁) and (⁵D₀→⁷F₂) transitions of Eu³⁺. The YBO₃:Tb³⁺ film showed dominant green emission at 545 nm due to the ⁵D₄-⁷F₅ transition of Tb³⁺.     

Highly enhanced photoluminescence and X-ray excited luminescence of Li doped Gd2O3:Eu thin films

Transparent Li-doped Gd₂O₃:Eu³⁺ thin-film phosphors were prepared by a modified sol-gel method. The effect of the Li⁺ ions on luminescent properties of the thin film was investigated. The results indicated that incorporation of Li⁺ ions into Gd₂O₃ lattice could result in a remarkable increase on photoluminescence or X-ray excited luminescence, and the strongest emission was observed from Gd_1.84Li_0.08Eu_0.08O_3−δ film, in which the intensity was increased by a factor of 1.9 or 2.3 in comparison with that of Gd_1.92Eu_0.08O₃ film. And it could be achieved the highest intensity for sintering the Gd_1.84Li_0.08Eu_0.08O_3−δ film at 700 °C. Such a temperature is much lower than the typical solid-state reaction temperature for its powder phosphors. This kind of transparent thin-film phosphors may promise for application to micro X-ray imaging system.     

Low temperature synthesis of TiO2−xNy powders and films with visible light responsive photocatalytic activity

Nitrogen-doped titania powders and films with excellent visible light photocatalytic activity were successfully prepared by an unadulterated ‘low-temperature process’ below 60 °C using mechanochemical doping and oxygen plasma treatment.     

Eu/Tb ions co-doped white light luminescence Y2O3 phosphors

Y₂O₃:Eu³⁺, Tb³⁺ phosphors with white emission are prepared with different doping concentration of Eu³⁺ and Tb³⁺ ions and synthesizing temperatures from 750 to 950 °C by the co-precipitation method. The resulted phosphors were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The results of XRD indicate that the crystallinity of the synthesized samples increases with enhancing the firing temperature. The photoluminescence spectra indicate the Eu³⁺ and Tb³⁺ co-doped Y₂O₃ phosphors show five main emission peaks: three at 590, 611 and 629 nm originate from Eu³⁺ and two at 481 and 541 nm originate from Tb³⁺, under excitation of 250-320 nm irradition. The white light luminescence color could be changed by varying the excitation wavelength. Different concentrations of Eu³⁺ and Tb³⁺ ions were induced into the Y₂O₃ lattice and the energy transfer from Tb³⁺→Eu³⁺ ions in these phosphors was found. The Commission International de l’Eclairage (CIE) chromaticity shows that the Y₂O₃:Eu³⁺, Tb³⁺ phosphors can obtain an intense white emission.     

Structure, microstructure and photoluminescence properties of Fe doped SnO2 thin films

In this paper, effects of Fe doping on crystallinity, microstructure and photoluminescence (PL) properties of sol-gel derived SnO₂ thin films are reported. It is shown that doping of Fe³⁺ ions leads to crystallite size reduction and higher strain in SnO₂ thin films. The room temperature PL spectra show marked changes in intensity and blue-shift of the emission lines upon Fe doping. These observations have been correlated with structural changes and defect chemistry of Fe doped SnO₂ thin films.     

Enhanced luminescence of GdTaO4:Eu thin-film phosphors by K doping

The effect of K⁺ ions on GdTaO₄:Eu³⁺ thin-film phosphors was investigated in order to improve their luminescent properties. The GdTaO₄:Eu_0.1, K_x thin films were synthesized by sol-gel process, and characterized through measuring their microstructure and luminescence. The results indicated that photoluminescence (PL) intensity of GdTaO₄:Eu³⁺ film was improved remarkably by K doping. There were two maxima in the curve of PL intensity against K⁺ dopant concentration, where one was improved up to 2.1 times at x = 0.001 and the other was enhanced up to 2.7 times at x = 0.05. The first maximum was regarded as the alteration of the local environment surrounding the Eu³⁺ activator by incorporation of K⁺ ions, and the second maximum was due to the flux effect. Additionally, the luminescence increased with the increase of firing temperature from 800 °C to 1200 °C.     

Quantum cutting abilities of sol-gel derived LiGdF4:Eu powders

Optical properties of europium doped LiGdF₄ (LGF) powders synthesized by the sol-gel process were investigated in the VUV range. Emission of two visible photons (due to ⁵D₀→⁷F_J transitions on two Eu³⁺ ions) per absorbed VUV photon was demonstrated indicating that a quantum cutting phenomenon takes place. This mechanism is explained by a two-step energy transfer when exciting Gd³⁺ ions in their ⁶G_J high energy level. Best luminescence efficiency was recorded at room temperature for samples with a doping rate of 5 mol% in europium ions. Effect of rare-earth concentration on internal quantum cutting efficiency was studied. Temperature dependence was also investigated and showed that the down-conversion process upon excitation at 202 nm becomes inefficient at low temperature since energy transfer from Gd³⁺ ions to Eu³⁺ ions is not effective any more. Such a result was connected with the thermal population at room temperature of Eu³⁺⁷F₁ state which is involves in the first step of the energy transfer.     

The optical properties of planar waveguides in LiB3O5 crystals formed by Cu implantation

A planar optical waveguide has been formed in a LiB₃O₅ crystal using 6.0 MeV Cu⁺-ions with a dose of 1 × 10¹⁵ ions/cm² at room temperature. Possible propagating modes were measured at a wavelength of 633 nm using the prism-coupling method. The refractive index profiles of the waveguide were reconstructed by an effective refractive index method and the beam propagation method was used to investigate the properties of the propagation modes in the formed waveguide. The results suggest that the fundamental TE₀ and TM₀ modes may be well-confined and propagate a longer distance inside the waveguide. The implantation process was also simulated using the transport of ions in matter code (TRIM), which indicates that the nuclear energy deposition may be the main factor for the refractive index change.     

Mg substitutions in ZnO-Al2O3 thin films and its effect on the optical absorption spectra of the nanocomposite

ZnO-Al₂O₃ nanocomposite thin films were prepared by sol-gel technique. The room temperature synthesis was mainly based on the successful peptization of boehmite (AlO(OH)) and Al(OH)₃ compounds, so as to use it as matrix to confine ZnO nanoparticles. The relative molar concentrations of xZnO to (1 − x) Al₂O₃ were varied as x = 0.1, 0.2 and 0.5. The optical absorption spectra of the thin films showed intense UV absorption peaks with long tails of variable absorption in the visible region of the spectra. The ZnO-Al₂O₃ nanocomposites thin films were doped with MgO by varying its molar concentrations as y = 0.05, 0.75, 0.1, 0.125, 0.15 and 0.2 with respect to the ZnO present in the composite. The MgO doped thin films showed suppression of the intense absorption peaks that was previously attained for undoped samples. The disappearance of the absorption peaks was analyzed in terms of the crystalline features and lattice defects in the nanocomposite system. The bulk absorption edge, which is reportedly found at 3.37 eV, was shifted to 5.44 eV (for y = 0.05), 5.63 eV (for y = 0.075) and maximum to 5.77 eV (for y = 0.1). In contrast, beyond the concentration, y = 0.1 the absorption edges were moved to 5.67 eV (for y = 0.125), 5.61 eV (for y = 0.15) and to 5.49 eV (for y = 0.2). This trend was explained in terms of the Burstein-Moss shift of the absorption edges.     

Comparative study of K0.5Bi0.5TiO3 nanoparticles derived from sol-gel-hydrothermal and sol-gel routes

A kind of novel lead-free ferroelectrics, potassium bismuth titanate, K_0.5Bi_0.5TiO₃ (KBT), has been prepared by sol-gel-hydrothermal and sol-gel routes, respectively, and the structural characters of as-synthesized powders were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The results indicated that sol-gel-hydrothermal route led to the formation of KBT nanowhiskers with diameters of 20 nm and lengths of 1 μm, and the processing temperature was as low as 160 °C, but the normal sol-gel route tended to form KBT cubic particles of about 100-200 nm, and the processing temperature was higher than 700 °C. It is believed that the gel precursor and hydrothermal environment play an important role in the formation of the nanowhiskers at low temperature. Due to the good sinterability of nanowhiskers, the ferroelectric and dielectric properties of KBT ceramics prepared by sol-gel-hydrothermal route were super to that prepared by sol-gel route.     

Thio sol-gel synthesis of titanium disulfide thin films and nanoparticles using titanium(IV) alkoxide precursors

Titanium tetraisopropoxide reacts with hydrogen sulfide in butylamine solvent at room temperature to form an amorphous titanium alkoxy-sulfide which can be converted to crystalline titanium disulfide by heat treatment in a flowing hydrogen sulfide gas stream. The reaction has been studied using infrared and Raman spectroscopy, gas chromatography-mass spectrometry, X-ray diffractometry and energy-dispersive X-ray analysis measurements. Based on these studies, it is shown that a partially thiolysed alkoxide precursor forms through the replacement of a limited number of alkoxy groups by hydrosulfide moieties. This alkoxy-hydrosulfide is believed to form following a thiolysis-condensation mechanism similar to the hydrolysis-condensation process that occurs during the corresponding oxide sol-gel reaction. The alkoxy-hydrosulfide species can then be completely thiolysed at 800 °C in a stream of hydrogen sulfide to yield pure, hexagonal titanium disulfide in either film or particulate form.     

Role of Al or Eu on thermoluminescence of Al- and/or Eu-doped SiO2 crystals

Although SiO₂ crystals have been used in electroluminescence devices and thermoluminescence (TL) dosimeters, the emission mechanism of TL has not yet been clearly explained. Recently, as we could get amorphous and highly pure SiO₂ prepared by the sol-gel method, we have investigated the TL emission mechanism using Al³⁺- and/or Eu³⁺-doped SiO₂ crystalline samples prepared by the heat-treatment under much lower temperature that the melting point of SiO₂. The TL spectrum of the Eu³⁺-doped sample displayed several peaks, including two main peaks due to the electron transitions from ⁵D₂ to ⁷F₅ (ca. 570 nm) and from ⁵D₀ to ⁷F₂ (ca. 610 nm). As doping concentration increased, all the peak intensities reduced from maximum values except that due to the electron transition from ⁵D₀ to ⁷F₂. These observations are thought to result from a cross-relaxation process due to the lack of inversion symmetry at the Eu³⁺ site.     

Growth of highly-oriented CaCu3Ti4O12 thin films on SrTiO3 (1 0 0) substrates by a chemical solution route

Highly-oriented CaCu₃Ti₄O₁₂ (CCTO) thin films deposited directly on SrTiO₃ (1 0 0) substrates have been developed successfully using a chemical solution coating method. X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were employed to characterize the structure and the morphology. It was observed that the CCTO thin films had the 1 μm × 1 μm domain-like microstructure that consists of compact grains of about 0.1 μm in size. The cross sectional SEM image shows that the CCTO grains grow regularly close to the clear interface between the CCTO film and the SrTiO₃ substrate. The result was discussed in terms of lattice mismatch between CCTO and SrTiO₃.     

Synthesis and fine patterning of organic-inorganic composite SiO2-Al2O3 thick films

Organic-inorganic composite SiO₂-Al₂O₃ films have been prepared by sol-gel using methacryloxypropyl trimethoxysilane and aluminum sec-butoxide as the precursors. By introduction of organic groups into the inorganic backbone, the smooth and crack-free films could be readily achieved by a one-step dip-coating process, with the thickness up to 4.6 μm after being post-baked at 200 °C for 2 h. The films presented in an amorphous phase with an acceptable chemical homogeneity. Owing to the formation of chelate rings, the gel films showed a strong photosensitivity to ultraviolet light at 325 nm. The uniform fine patterns of SiO₂-Al₂O₃ thick films could be well defined by ultraviolet light imprinting simply using a mask. These performances of SiO₂-Al₂O₃ films indicate the potential for integrated optical systems.     

Metallo-organic decomposition derived (Ca, Sr)ZrO3 dielectric thin films on Pt coated Si substrate

Metallo-organic decomposition derived dielectric thin films of calcium zirconate doped with various concentrations of strontium ((Ca, Sr)ZrO₃) were prepared on Pt coated silicon substrate. Mainly in this paper, we present the investigations of their structural developments and present their electric and dielectric properties as well. The structural developments show that the CaZrO₃ film has amorphous structure with carbonate existing when annealed at 600 °C, while annealed at 650 °C and above, the carbonate is decomposed and those films crystallize into perovskite phase without preferred orientation. In addition, the prepared (Ca, Sr)ZrO₃ films with their Zr-O bonds affected by strontium doping are homogenous and stable as solid solutions in any concentration of strontium and all Bragg diffraction characteristics for the films shift downward with the increase in the concentration of strontium. Moreover, the electric properties show that the (Ca, Sr)ZrO₃ films have very low leakage current density and high breakdown strength; typically, the CaZrO₃ film annealed at 650 °C has the leakage current density approximately 9.5 × 10⁻⁸ A cm⁻² in the field strength of 2.6 MV cm⁻¹. Furthermore, the dielectric properties show that their dielectric constants are higher than 12.8 with very little dispersion in the frequency range from 100 Hz to 1 MHz and are independent of applied dc bias as well. The dielectric properties, in combination with the electric properties, make the materials promising candidates for high-voltage and high-reliability capacitor applications.     

Sensitized red luminescence from Bi co-doped Eu: ZnO-B2O3 glasses

Photoluminescence properties of Bi³⁺ co-doped Eu³⁺ containing zinc borate glasses have been investigated and the results are reported here. Bright red emission due to a dominant electric dipole transition ⁵D₀→⁷F₂ of the Eu³⁺ ions has been observed from these glasses. The nature of Stark components from the measured fluorescence transitions of Eu³⁺ ions reveal that the rare earth ions could take the lattice sites of C_s or lower point symmetry in the zinc borate glass hosts. The significant enhancement of Eu³⁺ emission intensity by 346 nm excitation (¹S₀→³P₁ of Bi³⁺ ions) elucidates the sensitization effect of co-dopant. The energy transfer mechanism between sensitizer (Bi³⁺) and activator (Eu³⁺) ions has been explained.     

Optical properties of GdTaO4:Eu thick films prepared from a PVP-containing solution

Transparent GdTaO₄:Eu³⁺ thick films were prepared from the inorganic salt and 2-methoxyethanol solution containing polyvinylpyrrolidone (PVP) via sol-gel technique. The critical thickness of the film, i.e. the maximum thickness achievable without crack formation via non-repetitive deposition, was 0.8 μm. The effect of PVP on the morphology, crystallization behavior and optical property of the GdTaO₄:Eu³⁺ thick film was investigated. The results indicated that PVP could play an important role in the formation of transparent GdTaO₄:Eu³⁺ thick films, suppressing the stress evolution, adjusting the sol viscosity, ameliorating the crystallinity, and strengthening the covalency of Eu-O bonds. The GdTaO₄:Eu³⁺ thick films prepared with PVP exhibited a superior photoluminescence and X-ray exited luminescence, which implies that it will have promising applications in high-spatial-resolution X-ray imaging and flat panel display devices.     

Crystallographic and magnetic properties of (Nd,Dy)3Fe27.5(Ti,Mo)1.5 compounds

A systematic study of the formation, structure and magnetic properties of (Nd,Dy)₃Fe_27.5(Ti,Mo)_1.5 compounds has been performed. Rietveld analyses of the X-ray patterns of the samples indicate that the concentrations of Ti and Mo affect the formation and structural properties slightly, whereas different rare-earth (Nd and Dy) contents influence them significantly. It is found that high Dy contents make it difficult to form the 3:29-type structures. The Curie temperatures of Nd_2.1Dy_0.9Fe_27.5Ti_1.5−xMo_x decrease monotonically as more Ti was replaced by Mo but their saturation magnetizations remain almost unchanged; in contrast, for Nd_3−yDy_yFe_27.5TiMo_0.5, their saturation magnetizations decrease monotonically with increasing Dy contents while their Curie temperatures are constant.     

Influence of Zn Ions Codoping on Luminescence Properties of PbWO4:RE(RE=La, Yb, Y)

Zn and RE (RE=La, Yb, Y) ions co-doped PbWO₄ (PWO) single crystal grown by the Czochralski technique are characterized by x-ray diffraction (XRD), opticaltransmission spectra, and photoluminescence (PL). The doping of Zn ions shows distinct effects on the properties of PWO:RE crystals. At low concentration of Zn ions (200ppm), the luminescence intensity is quite weak for (Zn,La)-doped PWO, but is substantially strong for (Zn,Yb)-doped PWO. The blue luminescence intensity is significantly enhanced with the increasing Zn ions doping for PWO:Y. The trivalent ions codoping can increase the ratio of the blue luminescence contributing to the fast components of light yield. Ybions can enhance efficiency of luminescence in PWO:Yb:Zn because they may act as a luminous sensitization agent which can be involved in the efficient energy transfer and storage of the radiative process.     

Effects of substrates on the structure and dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films were grown on Pt(1 1 1)/Ti/SiO₂/Si and LaNiO₃(LNO)/Pt(1 1 1)/Ti/SiO₂/Si substrates by a sol-gel processing technique, respectively. The BTS thin films deposited on annealed Pt(1 1 1)/Ti/SiO₂/Si and annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrates exhibited strong (1 1 1) and perfect (1 0 0) orientations, respectively. The BTS thin films grown on un-annealed Pt(1 1 1)/Ti/SiO₂/Si substrates showed random orientation with intense (1 1 0) peak, while the films deposited on un-annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrate exhibited random orientation with intense (1 0 0) peak, respectively. The dielectric constant of the BTS films deposited on annealed Pt(1 1 1)/Ti/SiO₂/Si, annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si, un-annealed Pt(1 1 1)/Ti/SiO₂/Si and un-annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrates was 512, 565, 386 and 437, respectively, measured at a frequency of 100 kHz. A high tunability of 49.7% was obtained for the films deposited on annealed LNO/Pt(1 1 1)/Ti/SiO₂/Si substrate, measured at the frequency of 100 kHz with an applied electric field of 200 kV/cm. The high tunability has been attributed to the (1 0 0) texture of the films and larger grain sizes.