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1.
J. Lusakowski W. Knap N. Dyakonova E. Kaminska A. Piotrowska K. Golaszewska M. S. Shur D. Smirnov V. Gavrilenko A. Antonov S. Morozov 《Physics of the Solid State》2004,46(1):138-145
Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation
is presented. Three groups of different transistors based on GaAs/GaAlAs or GaInAs/AlGaAs heterostructures are investigated
at liquid-helium temperatures and for magnetic fields of up to 14 T. The magnetic-field dependence of the transistor resistance
is used for evaluation of the electron density and mobility in the transistor channel. The electron mobility and concentration
determined from magnetotransport measurements are used for the interpretation of recently observed resonant detection of terahertz
radiation in 0.15 μm gate length GaAs transistors and for the determination of the parameters of other field-effect transistors
processed for resonant and voltage tunable detection of THz radiation.
From Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 138–145.
Original English Text Copyright ? 2004 by Lusakowski, Knap, Dyakonova, Kaminska, Piotrowska, Golaszewska, Shur, Smirnov, Gavrilenko,
Antonov, Morozov.
This article was submitted by the authors in English. 相似文献
2.
3.
Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors
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The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering. 相似文献
4.
Nonmonotonic bias voltage dependence of the magnetocurrent in GaAs-based magnetic tunnel transistors
Magnetic tunnel transistors are used to study spin-dependent hot electron transport in thin CoFe films and across CoFe/GaAs interfaces. The magnetocurrent observed when the orientation of a CoFe base layer moment is reversed relative to that of a CoFe emitter, is found to exhibit a pronounced nonmonotonic variation with electron energy. A model based on spin-dependent inelastic scattering in the CoFe base layer and strong electron scattering at the CoFe/GaAs interface, resulting in a broad electron angular distribution, can well account for the variation of the magnetocurrent in magnetic tunnel transistors with GaAs(001) and GaAs(111) collectors. 相似文献
5.
文章从异质界面的三角势阱中二维电子气的形成人手,计算了二维电子气的量子化能级及其面电子密度.对HEMT器件材料结构参数的优化、器件的电荷控制模型及I-V特性作了分析. 相似文献
6.
半导体量子器件物理讲座 第二讲 高电子迁移率晶体管(HEMT) 总被引:1,自引:0,他引:1
文章从异质界面的三角势阱中二维电子气的形成入手,计算了二维电子气的量子化能级及其面电子密度,对HEMT器件材料结构参数的优化、器件的电荷控制模型I-V特性作了分析。 相似文献
7.
本文采用低能电子辐照源对NPN及PNP晶体管进行辐照试验. 在辐照试验过程中, 针对NPN及PNP晶体管发射结施加不同的偏置条件, 研究偏置条件对NPN及PNP晶体管辐射损伤的影响. 使用Keithley 4200-SCS半导体特性测试仪在原位条件下测试了双极晶体管电性能参数随低能电子辐照注量的变化关系. 测试结果表明, 在相同的辐照注量条件下, 发射结反向偏置时双极晶体管的辐照损伤程度最大; 发射结正向偏置时双极晶体管的辐照损伤程度最小; 发射结零偏时双极晶体管的辐照损伤程度居于上述情况之间.
关键词:
双极晶体管
低能电子
电离辐射 相似文献
8.
当器件的尺度小型与电子的平均自由程相当时,电子的输运可以看作弹道输运。文章介绍了隧穿热电子晶体管输运放大器和电子能谱仪两种工作模式下的工作原理以及用共振隧穿热电子晶体管做成的记忆器,如果器件的尺寸进一步减小,电子的波动特性也必须考虑,文章介绍了研究这种器件中的输运特性的方法及量子干涉晶体管和量子反射晶体管的工作原理。 相似文献
9.
G. Michałek B.R. Bułka 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(1):121-128
The currents and their fluctuations in two capacitively coupled single electron transistors are determined in the limit of
sequential tunnelling. Our considerations are restricted to the case when the islands (dots) of the transistors are atomic-sized,
which means each of them has only one single electronic level available for the tunnelling processes. The Coulomb interactions
of accumulated charges on the both single electron transistors lead to the effect of the negative differential resistance.
An enhancement of the current shot-noise was also found. Spectral decomposition analysis indicated the two main contributions
to the shot-noise: low- and high-frequency fluctuations. It was found that the low frequency fluctuations (polarization noise)
are responsible for a strong enhancement of the current noise.
Received 9 October 2001 / Received in final form 8 March 2002 Published online 9 July 2002 相似文献
10.
Li ZQ Podzorov V Sai N Martin MC Gershenson ME Di Ventra M Basov DN 《Physical review letters》2007,99(1):016403
We report on an infrared spectroscopy study of mobile holes in the accumulation layer of organic field-effect transistors based on rubrene single crystals. Our data indicate that both transport and infrared properties of these transistors at room temperature are governed by light quasiparticles in molecular orbital bands with the effective masses m* comparable to free electron mass. Furthermore, the m* values inferred from our experiments are in agreement with those determined from band structure calculations. These findings reveal no evidence for prominent polaronic effects, which is at variance with the common beliefs of polaron formation in molecular solids. 相似文献
11.
M. N. Bharathi Vinayakprasanna N. Hegde Arshiya Anjum T. M. Pradeep N. Pushpa K. C. Praveen 《辐射效应与固体损伤》2017,172(3-4):235-249
The total dose effects of 1?MeV electrons on the dc electrical characteristics of silicon NPN transistors are investigated in the dose range from 100?krad to 100?Mrad. The different electrical characteristics such as Gummel characteristics, excess base current (ΔIB), dc current gain (hFE), transconductance (gm), displacement damage factor (K) and output characteristics were studied in situ as a function of total dose. A considerable increase in base current (IB) and a decrease in hFE, gm and ICSat was observed after 1?MeV electron irradiation. The collector–base (C–B) junction capacitance of transistors was measured to estimate the change in the effective carrier concentration. After 1?MeV electron irradiation, a considerable degradation in capacitance was observed. The plot of (1/C2) versus voltage shows that the effective carrier concentration and built-in voltage (Vbi) increase marginally upon 1?MeV electron irradiation. The results of 1?MeV electron irradiation were compared with 1?MeV proton and Co-60 gamma irradiation results in the same dose range. The degradation for 1?MeV electron and Co-60 gamma-irradiated transistors was significantly less when compared to 1?MeV proton-irradiated transistor. The 1?MeV proton, 1?MeV electron and Co-60 gamma-irradiated transistors were subjected to isochronal annealing to analyze the recovery of the electrical parameters. 相似文献
12.
B. D. Weaver 《辐射效应与固体损伤》2013,168(9):425-430
We present a review of radiation effects studies on heterojunction bipolar transistors (HBTs) in order to develop a framework for qualifying devices for application in the harsh radiation environment of space. Radiation effects in different HBT material systems are considered here, including Si/SiGe, GaAs/AlGaAs, and InP/InGaAs. We discuss the different effects of ionizing and nonionizing radiation on device performance and review the strong role that device geometry plays in determining the overall radiation tolerance. We present a new comparison of radiation tolerance in conventional transistors, HBTs, and high electron mobility transistors. Finally, we conclude that with proper design, HBTs are excellent candidates for application in space. 相似文献
13.
In this paper, we investigate theoretically the electron transport in AlGaN/GaN single-barrier and in AlGaN/GaN/AlGaN double-barrier heterostructures, aimed to operate as high-power and high-temperature field-effect transistors. The presence of spontaneous and piezoelectric polarizations as well as the heterointerface polarity are evoked and taken into account in the modelling part. Delta-doping is used as a source of electrons for the channel quantum well. Calculations of the electron-band parameters are made by using self-consistent solutions of coupled Schrodinger-Poisson equations. It is found that the polarization fields act to significantly increase the two-dimensional sheet charge concentration. Moreover, the AlGaN/GaN heterostructures with higher Al compositions are found to be favourable for higher electron densities. On the other hand, the employment of a back doping with delta-shaped profiles is shown to improve further the electrical behaviour of the field-effect transistors studied. 相似文献
14.
15.
Lo CC Lang V George RE Morton JJ Tyryshkin AM Lyon SA Bokor J Schenkel T 《Physical review letters》2011,106(20):207601
We have measured the electrically detected magnetic resonance of donor-doped silicon field-effect transistors in resonant X- (9.7 GHz) and W-band (94 GHz) microwave cavities. The two-dimensional electron gas resonance signal increases by 2 orders of magnitude from X to W band, while the donor resonance signals are enhanced by over 1 order of magnitude. Bolometric effects and spin-dependent scattering are inconsistent with the observations. We propose that polarization transfer from the donor to the two-dimensional electron gas is the main mechanism giving rise to the spin resonance signals. 相似文献
16.
《Superlattices and Microstructures》1999,25(1-2):263-267
The charging energy and quantum energy in silicon single electron transistors have been investigated. The devices were fabricated in the form of point contact MOSFETs, some of which show the Coulomb blockade oscillations at room temperature. The charging energy and quantum energy were derived by fitting the simulation results to the experimental data. It was clearly found that the quantum energy became comparable with the charging energy when the dot size is smaller than 10–20 nm and the charging energy is more than 20 meV. These results indicate that the quantum effects should be taken into account even in silicon devices when silicon single electron transistors or MOSFETs smaller than about 20 nm are designed. 相似文献
17.
Physical mechanics of fluctuation processes in advanced submicron and decananometer MOSFETs (metal-oxide-semiconductor field-effect
transistors) including the ultra-thin film SOI (siliconon-insulator) devices using strained silicon films are reviewed. The
review is substantially based on the results obtained by the authors. It is shown that the following drastic changes occur
in the nature and parameters of noise in such devices as a result of their downscaling when the gate oxide thickness and the
channel length and width are decreased, the SOI substrates are used, the silicon film thickness is reduced, the film doping
level is varied, the strained silicon films are employed, etc. Firstly, the Lorentzian components can appear in the current
noise spectra. Those components are due to (i) electron tunneling from the valence band through the gate oxide in the SOI
MOSFETs of a sufficiently thin gate oxide (LKE-Lorentzians); (ii) Nyquist fluctuations generated in the source and drain regions
near the back Si/SiO2 interface in the SOI MOSFETs (BGI Lorentzians); (iii) electron exchange between the channel and some single trap in the gate
oxide of the transistors with sufficiently small length and width of the channel (RTS Lorentzians). Secondly, the 1/f-noise level can increase due to (i) the appearance of recombination processes near the Si/SiO2 interface activated by the currents of electron tunneling from the valence band; (ii) an increase in the trap density in
the gate oxide of the devices fabricated on the biaxially tensile-strained silicon films; (iii) the contribution of the 1/f fluctuations of the current flowing through the gate oxide as a result of electron tunneling from the conduction band. At
the same time, the 1/f-noise level may decrease due to a decrease in the trap density in the gate oxide of the transistors fabricated on the uniaxially
tensile-strained silicon films. Moreover, a 1/f
1.7 component may appear in the noise spectra for the transistors of a sufficiently thin gate oxide, whose component is due to
charge fluctuations on the defects located near the interface between the gate polysilicon and the gate oxide. 相似文献
18.
Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors
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We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K. 相似文献
19.
V. V. Pogosov E. V. Vasyutin A. V. Korotun 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2007,1(2):212-216
Effects of single-electron tunneling charging and Coulomb blockade in a cluster structure (molecular transistor) with regard to the quantization of electron levels in an island electrode are investigated. The spectrum of electrons is calculated for small disk-shaped clusters. Restrictions connected with the Coulomb instability of the cluster and electron relaxation are introduced in the theory. The current gap and its voltage asymmetry are calculated for single-electron transistors based on small gold clusters. The effect of the cluster shape on the current gap is investigated. 相似文献
20.
Single electron transistors with wire channels are fabricated by a nanoelectrode-pair technique. Their characteristics strongly depend on the channel widths and the voltages on the in-plane gates. A few dips in the Coulomb blockade oscillations were observed at the less positive gate voltages for a device with a 70nm-wide wire due to Coulomb blockade between the coupled dots. By applying negative voltages to the in-plane gates, the oscillations became periodic, which indicated the formation of a single dot in the conducting channel. These gates facilitate fabricating single-electron transistors with single dot structures, which have potential applications on its integration. 相似文献