Dispersion of functional tetraphenylporphyrin-ligated metal into ultra-thin flexible acrylate films. 2. Oxygen-uptake properties

Cobalt(II) meso-tetraphenylporphyrin (CoTPP)/acrylate hybrid thin films were prepared by CoTPP sublimation and reactive monomer evaporation onto the glass substrate in vacuum conditions. Deposited CoTPP/acrylate thin films were in situ photopolymerized. The oxygen-uptake behaviors of CoTPP/acrylate films were investigated by means of sorption measurements, monitored by gravimetric means, and analyzed using dual mode sorption model. The loading percent of CoTPP in the film was adjusted up to 60% by controlling the CoTPP sublimation rate. The thickness of the CoTPP/acrylate hybrid film was about 200 nm and oxygen-uptake data obtained from the sorption measurements indicated that CoTPP molecules in the CoTPP/acrylate hybrid films were able to bind oxygen molecules reversibly.     

Fabrication of high performance thin films from metal fluorocomplex aqueous solution by the liquid phase deposition

The hetro-structured oxide thin films from metal fluorocomplex solution have been prepared by the liquid phase deposition (LPD) method. The Pt/Nb₂O₅ and Au/Nb₂O₅ composite films can be prepared from a mixed solution of niobium source, H₃BO₃, Pt(NH₃)₄Cl₂ and HAuCl₄ aqueous solutions under the ambient temperature and atmosphere. In the case of Au/SiO₂ composite film, (NH₄)₂SiF₆ solution is used as a mother solution. The Pt and Au ionic species are deposited in Nb₂O₅ and SiO₂ matrices. They are reduced to their metallic state after treatment above 200 °C. The size of dispersed particles can be controlled by heat treatment temperature. It is also clear that, gold nanoparticles are also found to interact with SiO₂, although the interaction is smaller than that with Nb₂O₅ showing the size of Au nanoparticles remain smaller in Nb₂O₅ that in SiO₂.     

Surface layer-by-layer chemical deposition reaction for thin film formation of nano-sized metal 8-hydroxyquinolate complexes

The feasibility of a novel and simple layer-by-layer chemical deposition method for the preparation of nano-sized metal 8-hydroxyquinolate complexes has been investigated and reported. Uniform nanocrystalline films have been synthesized via dipping a substrate alternately in metal ion solution followed by ligand solution. The stoichiometry of the as-grown anhydrous Fe(III), Co(II), Ni(II), Cu(II) and Zn(II) complex crystals were confirmed from the metal analysis and molar stoichiometric ratio of metal ion to 8-hydroxyquinoline. This was characterized as 1:2 for the Co(II), Ni(II), Cu(II) and Zn(II)–quinolate complexes. The Fe(III)–quinolate thin film was found to exhibit a 1:3 ratio. Electron impact-mass spectra (EI-MS) of all the synthesized thin film metal quinolate complexes were recorded and the results refer to the existence of the molecular ion peak at the corresponding m/z values. Confirmation of such stoichiometric 1:2 and 1:3 ratios were also evident from the (EI-MS) study. The deposited thin films were also subjected to analysis by a scanning electron microscope (SEM) and a particle size ?50 nm was detected. FT-IR and UV–Vis spectroscopy were further used to confirm the structure of the metal 8-hydroxyquinolate complexes. Thermal gravimetric analysis (TGA) was also used to follow up the possible thermal decomposition steps and to calculate the thermodynamic parameters of the nano-sized metal complexes.     

Precise Control of Metal Oxide Thin Films Deposition in Magnetron Sputtering Plasmas for High Performance Sensing Devices Fabrication

Magnetron sputtering deposition is a widely used technique to deposit thin film precisely at nanoscale level. During the deposition of metal oxide thin films, reactive oxygen gas is introduced into the deposition chamber. Pure metal and metal oxide materials can be used as sputter target, although the simplest way is by using a pure metal target. In such reactive process, the effect of target poisoning significantly influence the deposition process and the growth mechanisms of metal oxide thin films became very complex. In general, external parameters such as discharge power, working pressure, reactive gases ratio and substrate temperature are used to optimize the properties of deposited thin films. Then, ex-situ analyses such as scanning electron microscope and X-ray diffraction analysis are performed to obtain the optimized parameter. Sample depositions and ex-situ analyses consume time to achieve the goal through try and error. In this article, in-situ plasma diagnostics are reviewed focusing on an optical emission spectroscopy to precisely control and investigate the sputter target poisoning effect during the deposition of metal oxide thin films. The emission of atomic lines from several metal and oxygen atoms were used to discuss the deposition mechanisms and their correlation with the deposited thin films was observed. Finally, the deposited metal oxide thin films were proposed and tested for several applications such as gas sensor and frequency selective surface glass.     

Preparation of epitaxial La0.6Ca0.4Mn1−xFexO3 (x = 0, 0.2) thin films: Variation of the oxygen content

Perovskite thin films with a nominal composition of La_0.6Ca_0.4Mn_1−xFe_xO₃ (x = 0, 0.2) were deposited by pulsed reactive crossed beam laser ablation. The film properties, such as electrical conductivity and magnetoresistance are studied as a function of the oxygen content and substrate type. The oxygen content of the thin films was determined by Rutherford Backscattering and controlled by varying the background gas pressure, pressure of the gas pulse and by using alternatively O₂ and N₂O as the gas pulse.

LaAlO₃ and SrTiO₃ were used as substrates at deposition temperature of 650 °C. The grown films were analyzed by X-ray diffraction in order to optimize the growth conditions, i.e. to obtain epitaxial thin films. Thin films doped with 20% Fe were grown under the same experimental conditions as the undoped LCMO films and the effect of the doping on the structural and transport properties of the thin films has been investigated.

The temperature of the metal–insulator transition was measured as a function of the oxygen content and substrate type.     

Preparation of TiO2 thin films using water-soluble titanium complexes and their photoinduced properties

Titanium dioxide thin films were prepared by using four water-soluble titanium complexes of titanium-lactate, tartalate, malate and salicylate complex solutions. The crystalline phases detected in the films were anatase. The surface microstructures of the four film samples were different in their grain sizes. Photocatalytic decomposition activity of the four films was almost the same, but their photoinduced hydrophilicities were different. The film prepared using titanium-salicylate complex exhibited lower hydrophilic conversion rate than the other films. Grain size and stress yielded to the film are considered to be important factors on the photoinduced hydrophilicity.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

Thermal change of organic light-emitting ALQ3 thin films

A series of Alq3 thin films with the thicknesses of 50, 100, and 200 nm was deposited on Si substrates at room temperature using the thermal evaporation method. The thermal crystallization process of Alq3 thin films, especially 50 nm thick films, was successfully examined using high-temperature X-ray diffraction (HT-XRD) with the in-plane scan mode. Film thickness, density, and changes in surface roughness while heating were determined using X-ray reflectometry (XRR). The decreased density and increased surface roughness, which were accompanied by sublimation, indicate the instability of the Alq3 film. Thus, thermal instability is a major factor for device failure.     

Influence of metal electrodes on c‐axis orientation of AlN thin films deposited by DC magnetron sputtering

Nanocrystalline aluminum nitride (AlN) thin films were deposited on two types of metallic seed layers on silicon substrates, (111) textured Pt and (110) Mo, by reactive DC magnetron sputtering at low temperature (200 °C). Both textured films of Pt and Mo promote nucleation, thereby improving the crystallinity and epitaxial growth condition for AlN thin films. The deposited films were examined by X‐ray diffraction, scanning electron microscopy and atomic force microscopy techniques. The results indicated that the preferred orientation of crystallites greatly depends upon the kinetic energy of the sputtered species (target power) and seed layers used. Furthermore, AlN thin films with c‐axis perpendicular to the substrate grew on both types of metal electrodes at all power levels larger than 100 W. By comparing the structural properties and compressive stresses at perfect c‐axis orientation conditions, it is evident that AlN films deposited on (110) oriented Mo substrates exhibited superior properties as compared with Pt/Ti seed layers. Furthermore, less values of compressive stresses (?3 GPa) as compared with Pt/Ti substrates (?7.08 GPa) make Mo preferentially better candidate to be employed in the field of suspended Micro/Nano ‐ electromechanical systems (MEMS/NEMS) for piezoelectric devices. Copyright © 2017 John Wiley & Sons, Ltd.     

Metal deposits on well-ordered oxide films

Metal oxide interfaces, metal coatings or dispersed metals on oxide supports play an important part in many technological areas. Nevertheless, there is still a lack of fundamental knowledge about the essential properties of thin metal films and small metal particles on oxide supports, although a deeper understanding could help to improve the electronic, mechanical or catalytic performance of such systems. In the past, a number of different approaches have been proposed and explored aiming at the preparation of suitable model systems. In this review, we discuss the possibility to use thin, well-ordered oxide films as supports for the study of deposited metal particles. This approach offers the advantage to permit the unrestricted application of all experimental methods, which rely on a good electrical or thermal conductivity of the sample, like PES, LEED, STM or TDS. With the help of several examples taken from our own work on a thin alumina film, we show that it is feasible to characterise such systems on a microscopic level with respect to all relevant structural, electronic and adsorption properties. In this way, correlations between these features can be established helping to understand the particular chemistry and physics of small metal aggregates.     

Preparation of polyimide/BaTiO3‐nanocrystal hybrid thin films and their dielectric property

High dielectric constant is highly desirable in capacitors and memory devices. In this work, oleic acid (OA)‐capped BaTiO₃ nanocrystals were synthesized by a two‐phase approach. Polyimide (PI)/BaTiO₃‐nanocrystal composite thin films with high dielectric constant have been successfully fabricated. The morphologies and dielectric properties of the hybrid films were exploited. The results showed that BaTiO₃ nanocrystals can be uniformly dispersed in the PI thin films owing to the surface modification of OA‐capped BaTiO₃ nanocrystals. It was found that the dielectric constant of composite film varies with the volume fraction of BaTiO₃ nanocrystals and sintering temperatures and reaches a maximum value of 44.1, which is around 13 times higher than that of pristine PI thin film (3.2). These results demonstrated that PI/BaTiO₃‐nanocrystal composite films have considerable application potential in microelectronic fields.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Deposition of plasma conjugated polynitrile thin films and their optical properties

The plasma polymerization of 4-phenylbenzonitrile was carried out with the objective of synthesizing a novel conjugated polynitrile thin film with a better optical property. The structure, compositions and morphology of the plasma-polymerized 4-phenylbenzonitrile (PPBPCN) thin films were investigated by Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). A fine, homogenous PPBPCN film with a large π-conjugated system and a high retention of the aromatic ring structure of the starting monomer in the deposited plasma films is obtained when a low discharge power of 30 W was used during film formation. For the first time, a blue emission with relatively high photoluminescence intensity for PPBPCN thin films was observed.     

Effect of sol-gel preparation method on particle morphology in pure and nanocomposite PZT thin films

Double-scale composite lead zirconate titanate Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films of 360 nm thickness were prepared by a modified composite sol-gel method. PZT films were deposited from both the pure sol and the composite suspension on Pt/Al₂O₃ substrates by the spin-coating method and were sintered at 650°C. The composite suspension formed after ultrasonic mixing of the PZT nanopowder and PZT sol at the powder/sol mass concentration 0.5 g mL⁻¹. PZT nanopowder (≈ 40–70 nm) was prepared using the conventional sol-gel method and calcination at 500°C. Pure PZT sol was prepared by a modified sol-gel method using a propan-1-ol/propane-1,2-diol mixture as a stabilizing solution. X-ray diffraction (XRD) analysis indicated that the thin films possess a single perovskite phase after their sintering at 650°C. The results of scanning electron microscope (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses confirmed that the roughness of double-scale composite PZT films (≈ 17 nm) was significantly lower than that of PZT films prepared from pure sol (≈ 40 nm). The composite film consisted of nanosized PZT powder uniformly dispersed in the PZT matrix. In the surface micrograph of the film derived from sol, large round perovskite particles (≈ 100 nm) composed of small spherical individual nanoparticles (≈ 60 nm) were observed. The composite PZT film had a higher crystallinity degree and smoother surface morphology with necklace clusters of nanopowder particles in the sol-gel matrix compared to the pure PZT film. Microstructure of the composite PZT film can be characterized by a bimodal particle size distribution containing spherical perovskite particles from added PZT nanopowder and round perovskite particles from the sol-matrix, (≈ 30–50 nm and ≈ 100–120 nm), respectively. Effect of the PZT film preparation method on the morphology of pure and composite PZT thin films deposited on Pt/Al₂O₃ substrates was evaluated.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Luminescent properties of PP and LDPE films and rods doped with the Eu(III)‐La(III) complex

The work is devoted to luminescent properties of trivalent lanthanide complexes dispersed in thermoplastic host matrices. Polyethylene films and polypropylene‐rods, both doped with these complexes, were manufactured using an extrusion technique. Two kinds of dopants were used: Eu(III)‐thenoyltrifluoroacetone‐1,10‐phenanthroline complex (1) and Eu(III)‐La(III)‐1,10‐phenanthroline complex (2). Absorption, excitation, emission spectra and lifetime of luminescence were studied. The impact of the polymer matrix on the emission spectra was investigated. Emission spectra of the films were studied at room and helium temperatures. Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) surface mapping showed that in the Eu(III)‐La(III) complex europium forms islands (clusters) with a dimension of 1 µm, whereas lanthanum was dispersed more uniformly in the polymer matrix. Dependence of emission intensity on the excitation was determined. Copyright © 2006 John Wiley & Sons, Ltd.     

Influence of local structure on local electric field in Island‐like silver films

The infrared absorption enhancement phenomenon in the normal configuration of vacuum‐evaporated metal films on a transparent substrate is known to depend not only on the metal film morphology but also on the local structures of metal particles. To date, however, few studies have examined the effect of local structure on the phenomenon. Size distributions of islands and gaps, along with the volume fractions of Ag in thin films, were measured using scanning electron microscopy as a function of film thickness. The local structure of Ag nano clusters deposited on silicon substrates was investigated using a total conversion electron yield X‐ray absorption fine structure (XAFS) method at the Ag K‐edge. We observed a correlation between the electromagnetic field intensity at the surface as evaluated by IR measurement and the coordination numbers evaluated by XAFS. We found that the film morphology had a greater effect on resonant and nonresonant contributions than did the local structure of a particle. Copyright © 2006 John Wiley & Sons, Ltd.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

The mechanism of formation and some properties of thin fluorocarbon films deposited onto silicon plates by electron-beam polymerization of hexafluoropropylene from the vapor phase

The results of studying thin fluorocarbon films deposited onto single-crystal silicon plates through electron beam polymerization of hexafluoropropylene from the vapor phase are presented. The films are deposited under the action of an electron beam with an energy of 40 keV at a monomer vapor pressure of 5- 20 hPa. It is shown that plastic solid films consisting of a low-molecular-mass polymer with low thermal stability are formed at a beam current density on the order of 20 μA/cm², while at current densities on the order of 150 μA/cm², rigid brittle films of three-dimensional crossl inked polymer are formed with a thermal stability of about 350°C. It is assumed that the films are formed via chain polymerization, which at high current densities, is accompanied by polyrecombination processes leading to efficient chain crosslinking. It is found that polymer clusters are ordered in the course of film formation.     

沉积电位对电沉积ZnS薄膜的影响

采用电沉积方法,在不同沉积电位条件下,在氧化锡铟(ITO)导电玻璃上沉积制备了ZnS薄膜,利用XRD、SEM和UV-VIS测试技术对在不同沉积电位所制备薄膜的晶相结构、表面微观形貌和光学性能进行了表征.研究结果表明:沉积电位在1.5 V—1.7 V范围内制备的ZnS薄膜呈非晶态,其可见光透过率从60 %降低到20 %,薄膜的光学带隙约为3.97 eV.在沉积电位为2.0 V条件下所沉积薄膜为ZnS结晶相和金属Zn混合相,薄膜透过率显著降低.