Properties of a Thin-Film Optical Waveguide Using Fluorinated Silicon Oxide and Organic Spin-on-Glass Films

A thin-film optical waveguide using a fluorinated silicon oxide (SiOF) as a core layer was investigated. An organic spin-on-glass (SOG) film was used for a cladding layer. The SiOF films were formed at 23°C by a liquid-phase deposition (LPD) technique using a supersaturated hydrofluosilicic acid (H₂SiF₆) aqueous solution. A thin-film optical waveguide structure for single mode was designed and fabricated, based on the dispersion properties of refractive indices for the LPD-SiOF and organic SOG films. The refractive indices at a wavelength of 632.8 nm were 1.430 and around 1.400 for the LPD-SiOF and organic SOG films, respectively. The thickness of LPD-SiOF films deposited was 1.18 μm. Thicknesses of cladding organic SOG films cured at 300 and 400°C were 1.28 and 1.31μm, respectively. The effective refractive indices for single mode were 1.4169 and 1.4158 at a wavelength of 632.8 nm for the cladding organic SOG films cured at 300 and 400°C, respectively, and differences between the measured and calculated incident angles were 0.84° and 1.29° for the cladding organic SOG films cured at these respective temperatures. A streak of guided-light was observed for the LPD-SiOF/SOG structure optical waveguide. The transmission loss was 7.6-7.9 dB/cm.     

Fabrication and characteristics of thin-film optical switches using fluorinated silicon oxide deposited by a liquid-phase technique

Optical switching devices have been studied using thin-film optical waveguides with fluorinated silicon oxide (SiOF) films deposited by a liquid-phase deposition (LPD) technique. This report focuses on the structure of the thermo-optical (TO) switch and its optimization. TO devices with double-and triple-layer structures were fabricated using a material with an organic spin-on-glass (SOG) cladding layer and a liquid-phase deposited (LPD) SiOF core layer. The maximum extinction ratio of 15.97 dB was obtained for the double-layer structure TO devices at the half-wavelength power of 2.78 W, and at the heater area of 0.02 mm². The response time decreased with decrease in the heater area for both double-and triple-layer structures. The response time as short as 6.3 ms was obtained at the heater area of 0.02 mm² for the double-layer structure. For the triple-layer structure, an even shorter response time of 2ms was achieved at the heater area of 0.08 mm², and this was over one order of magnitude smaller than that for the double-layer structure at the same heater area (280 ms).     

Effect of oxygen partial pressure on the structural and optical properties of dc reactive magnetron sputtered molybdenum oxide films

Molybdenum oxide films (MoO₃) were deposited on glass and crystalline silicon substrates by sputtering of molybdenum target under various oxygen partial pressures in the range 8 × 10⁻⁵–8 × 10⁻⁴ mbar and at a fixed substrate temperature of 473 K employing dc magnetron sputtering technique. The influence of oxygen partial pressure on the composition stoichiometry, chemical binding configuration, crystallographic structure and electrical and optical properties was systematically studied. X-ray photoelectron spectra of the films formed at 8 × 10⁻⁵ mbar showed the presence of Mo⁶⁺ and Mo⁵⁺ oxidation states of MoO₃ and MoO_3−x. The films deposited at oxygen partial pressure of 2 × 10⁻⁴ mbar showed Mo⁶⁺ oxidation state indicating the films were nearly stoichiometric. It was also confirmed by the Fourier transform infrared spectroscopic studies. X-ray diffraction studies revealed that the films formed at oxygen partial pressure of 2 × 10⁻⁴ mbar showed the presence of (0 k 0) reflections indicated the layered structure of α-phase MoO₃. The electrical conductivity of the films decreased from 3.6 × 10⁻⁵ to 1.6 × 10⁻⁶ Ω⁻¹ cm⁻¹, the optical band gap of the films increased from 2.93 to 3.26 eV and the refractive index increased from 2.02 to 2.13 with the increase of oxygen partial pressure from 8 × 10⁻⁵ to 8 × 10⁻⁴ mbar, respectively.     

Waveguide and diode heterodyne measurements with CO2 laser and assignment of the CW FIR laser emission of OCS

Heterodyne spectra of carbonyl sulfide have been obtained with saturation in a CO₂ waveguide laser and without saturation with a diode laser. The absolute uncertainties of the measured positions lie between 10⁻⁴ and 7 × 10⁻⁶ cm⁻¹. The CW submillimeter laser line of OCS at 378 μm has been assigned to the J = 65 → 64 transition in the 02²0e state of ¹⁶O¹²C³²S, with a pumping through the R(64) line of 02²0e ← 00⁰0, a Δ-Σ transition weakly allowed by the l-type resonance.     

Si-nanostructures formation in amorphous silicon nitride SiNx:H deposited by remote PECVD

The formation of silicon nanoclusters embedded in amorphous silicon nitride (SiN_x:H) can be of great interest for optoelectronic devices such as solar cells. Here amorphous SiN_x:H layers have been deposited by remote microwave-assisted chemical vapor deposition at 300 °C substrate temperature and with different ammonia [NH₃]/silane [SiH₄] gas flow ratios (R=0.5−5). Post-thermal annealing was carried out at 700 °C during 30 min to form the silicon nanoclusters. The composition of the layers was determined by Rutherford back scattering (RBS) and elastic recoil detection analysis (ERDA). Fourier transform infrared spectroscopy (FTIR) showed that the densities of SiH (2160 cm⁻¹) and NH (3330 cm⁻¹) molecules are reduced after thermal annealing for SiN:H films deposited at flow gas ratio R>1.5. Breaking the SiH bonding provide Si atoms in excess in the bulk of the layer, which can nucleate and form Si nanostructures. The analysis of the photoluminescence (PL) spectra for different stoichiometric layers showed a strong dependence of the peak characteristics (position, intensity, etc.) on the gas flow ratio. On the other hand, transmission electron microscopy (TEM) analysis proves the presence of silicon nanoclusters embedded in the films deposited at a gas flow ratio of R=2 and annealed at 700 °C (30 min).     

Effect of surface roughness of TiO2 films on short-circuit current density of photoelectrochemical cell of ITO/TiO2/PVC-LiClO4/graphite

This paper reports the effect of surface topography of titanium dioxide films on short-circuit current density of photoelectrochemical solar cell of ITO/TiO₂/PVC-LiCLO₄/graphite. The films were deposited onto ITO-covered glass substrate by screen-printing technique. The films were tempered at 300 °C, 350 °C, 400 °C, 450 °C and 500 °C for 30 min to burn out the organic parts and to achieve the films with porous structure. The surface roughness of the films were studied using scanning electron microscope (SEM). Current–voltage relationship of the devices were characterized in dark at room temperature and under illumination of 100 mW cm⁻² light from tungsten halogen lamp at 50 °C. The device utilising the TiO₂ film annealed at 400 °C produces the highest short-circuit current density and open-circuit voltage as it posses the smoothest surface topography with the electrolyte. The short-circuit current density and open-circuit voltage of the devices increase with the decreasing grain size of the TiO₂ films. The short-circuit current density and open-circuit voltage are 0.6 μA/cm² and 109 mV respectively.     

The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation

The influence of P ion doping on the photoluminescence (PL) of the system of nanocrystals in SiO₂ matrix (SiO₂:Si) both without annealing and after annealing at various temperatures (provided before and after additional P implantation) is investigated. The Si and P implantation was carried out with ion energies of 150 keV and doses Φ_Si=10¹⁷ cm⁻² and Φ_P=(0.1–300)×10¹⁴ cm⁻² (current density j3 μAcm⁻²). The system after Si implantation was formed at 1000°C and 1100°C (2 h). For the case of SiO₂:Si system as-implanted by P, the intensity of PL was drastically quenched, but partially retained. As for the step-by-step annealing (at progressively increased temperatures) carried out after P implantation, the sign and degree of doping effect change with annealing temperature. The possible mechanisms of these features are discussed.     

Atomic layer deposition and characterization of Ga-doped ZnO thin films

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H₂O as Zn and O precursors. ZnO thin films were grown on c-plane sapphire (c- Al₂O₃) substrates at 300 C. For undoped ZnO thin films, it was found that the intensity of ZnO () reflection peak increased and the electron concentration increased from 6.8×10¹⁸ to 1.1×10²⁰ cm⁻³ with the increase of DEZ flow rate, which indicates the increase of O vacancies () and/or Zn interstitials (Zn_i). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0×10⁻⁴ Ω cm was achieved at the TEG flow rate of 0.24 μmol/min.     

Diffusion of silicon in titanium nitride films. Efficiency of TiN barrier layers

Two kinds of reactively evaporated titanium nitride films with columnar (B ₀ films) and fine-grained film structure (B ₊ films) have been examined as diffusion barriers, preventing the silicon diffusion in silicon devices. The silicon diffusion profiles have been investigated by 2 MeV ⁴He⁺ Rutherford backscattering spectrometry (RBS) after annealing at temperatures up to 900° C, in view of application of high-temperature processes. The diffusivity from 400 to 900° C: D (m² s^–1)=2.5×10^–18 exp[–31 kJ/mol/(RT)] in B ₀ layers and D (m² s^–1)=3×10^–19 exp[–26 kJ/mol/(RT) in B ₊ TiN layers. The diffusivities determined correspond to grain boundary diffusion, the difference being due to the different microstructure. The very low diffusivity of silicon in B ₊ TiN layer makes it an excellent high-temperature barrier preventing silicon diffusion.     

Millimeter-Wave and High-Resolution Infrared Spectra of Monoisotopic SCSe: Equilibrium, Ground State, and ν1, mν2, and nν3 Rovibrational Parameters

The Fourier transform infrared spectrum of monoisotopic SC⁸⁰Se has been investigated in the ν₂, ν₃, 2ν₂, 2ν₃, and ν₁ regions with a resolution between 3 and 4 × 10⁻³ cm⁻¹. In addition, the millimeter-wave spectrum has been studied in the region 150 to 320 GHz, and ground and ν₂ = 1 excited state transitions have been measured. Ground state constants, B₀ = 2043.285 4(4) MHz and D₀ = 146.53(5) Hz, have been determined from a merge of millimeter-wave data and ground state combination differences spanning J values up to 77 and 143, respectively. The band centers ν₂ = 352.341 075(9) cm⁻¹ and ν₃ = 505.480 06(5)cm⁻¹ have been determined. The rovibrational parameters of numerous overtone and combination levels (ν₁ν^l2₂ν₃) = 02⁰0, 02²0, 03¹0, 03³0, 04⁰0, 04²0, 00⁰2, and 00⁰3 have been obtained from polynomial analyses whose standard deviations ranged from 0.7 to 3.5 × 10⁻⁴ cm⁻¹. The 10⁰0 level, ν_eff 1435.840 cm⁻¹, is anharmonically perturbed by the 04⁰0 level, with an avoided crossing at J = 55, and W₁₂₂₂₂ = 0.963 09(1) cm⁻¹. Transitions to both the upper (E⁺) and lower (E⁻) sublevels of the dyad were observed for 1 ≤ J′ ≤ 117 and 4 ≤ J′ ≤ 171, respectively, and the deperturbed wavenumbers ν₁ = 1435.542 76(2) and 4ν⁰₂ = 1432.725 00(3) cm⁻¹ were derived. Furthermore, a local crossing of the E⁻ and 04²0 levels involving l-type resonance was observed at J = 91.     

On the influence of a TiN interlayer on DLC coatings produced by pulsed vacuum arc discharge: Compositional and morphological study

The influence of a TiN interlayer on DLC coatings grown on silicon (1 0 0), 316 stainless steel and KCl by using the PAPVD pulsed arc discharge technique is presented in this paper. The structure of the coatings was determined by means of FTIR through observation of the absorption band modes of CH₂ between 3100 and 2800 cm⁻¹ and representation of the sp³ and sp² carbon bonds, respectively. The sp³/sp² bonds ratio was calculated by using the base line method and producing a value greater than 1 which was a good prediction of high hardness. XPS analysis of the films was made; the wide spectrum showed the elemental composition of the films (Ti, N, C). A narrow spectrum of C1s at binding energy of 284.48 eV was obtained, and its deconvolution showed peaks of sp³, sp² and Ti–C. Ti–C bonds were formed due to diffusion of carbon atoms into a TiN matrix. The concentration for the XPS spectra was calculated by using the area under the curve of sp³ and sp² peaks. The morphology of the bilayer, including roughness, grain size and thickness was studied through SPM techniques.     

Mechanical and electrical characteristics of silver stabilizer layer prepared by using nano silver paste for coated conductor

Mechanical and electrical properties of silver stabilizer layer of coated conductor, which was prepared using nano silver paste as starting materials, have been investigated. Nano silver paste was coated on YBCO (Y₁Ba₂Cu₃O_7−δ) film by a dip coating method with a speed of 25 mm/min. Coated film was dried in air and heat treated at 400–700 °C in a flowing oxygen atmosphere. Adhesion strength between YBCO and silver layer was measured by Tape test (ASTM D 3359). The hardness and electrical conductivity of the sample were measured by pencil hardness test (ASTM D 3363). Surface and volume resistance were measured by using LORESTA-GP (MITSUBISHI). The sample heat treated at 500 °C showed poor adhesiveness of 1B but it is clearly enhanced to 5B when samples were heat treated at higher than 600 °C. The silver layer heat treated at 700 °C showed a high hardness value of higher than 9H and a volume resistance of 1.417 × 10⁻⁷ Ω mm at room temperature. SEM observations showed that a dense silver layer was formed with a thickness of about 2 μm. Dip coated silver layer prepared by using nano silver paste showed superior electrical and mechanical characteristics which is comparable to those that sputter deposited Ag layer.     

Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors

We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO₂) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μ_sat) from 0.01 cm²/(V s) to 0.76 cm²/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase.     

Thermal oxidation of n-type ZnN films made by -sputtering from a zinc nitride target, and their conversion into p-type films

Transparent p-type thin films, containing zinc oxide phases, have been fabricated from the oxidation of n-type zinc nitride films. The zinc nitride thin films were deposited by rf-magnetron sputtering from a zinc nitride target in pure N₂ and pure Ar plasma. Films deposited in Ar plasma were conductive (resistivity 4.7×10⁻² Ω cm and carrier concentrations around 10²⁰ cm⁻³) Zn-rich Zn_xN_y films of low transmittance, whereas Zn_xN_y films deposited in N₂ plasma showed high transmittance (>80%), but five orders of magnitude lower conductivity. Thermal oxidation up to 550 C converted all films into p-type materials, exhibiting high resistivity, 10²–10³ Ω cm, and carrier concentration around 10¹³ cm⁻³. However, upon oxidation, the Zn_xN_y films did not show the zinc oxide phase, whereas Zn-rich Zn_xN_y films were converted into films containing ZnO and ZnO₂ phases. All films exhibited transmittance >85% with a characteristic excitonic dip in the transmittance curve at 365 nm. Low temperature photoluminescence revealed the existence of exciton emissions at 3.36 and 3.305 eV for the p-type zinc oxide film.     

AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy

We report the realization of an AlGaN/GaN HEMT on silicon (001) substrate with noticeably better transport and electrical characteristics than previously reported. The heterostructure has been grown by molecular beam epitaxy. The 2D electron gas formed at the AlGaN/GaN interface exhibits a sheet carrier density of 8×10¹² cm⁻² and a Hall mobility of 1800 cm²/V s at room temperature. High electron mobility transistors with a gate length of 4 μm have been processed and DC characteristics have been achieved. A maximum drain current of more than 500 mA/mm and a transconductance g_m of 120 mS/mm have been obtained. These results are promising and open the way for making efficient AlGaN/GaN HEMT devices on Si(001).     

Enhancement of the photoluminescence of silicon nanocrystals under the influence of electric field

The effect of electric field generated by the application of surface acoustic waves on photoluminescence (PL) of silicon nanocrystals embedded in SiO₂ films is studied. It is shown that the application of electric field results in an increase in the intensity of nanocrystal PL, the increase amounting to 10% at a field amplitude of 6 kV cm⁻¹. The results are discussed within the frame of the self-trapped exciton model.     

Development of epitaxial silicon lattice-matched insulators: silicon heterostructures for quantum confinement

Epitaxial films of the wide-bandgap II–VI beryllium chalcogenide semiconductors, BeTe, BeSe, and BeSeTe were grown on arsenic-terminated silicon substrates by MBE. Silicon was also epitaxially regrown on Be-chalcogenide films. Initial structural characterization revealed the desired smooth two-dimensional nature of the layer growth. The composition of BeSeTe ternary films was governed by the Be/Se flux ratio during deposition rather than by the Se/Te flux ratio. The variation in Be/Se flux ratio or in the sticking coefficients due to temperature gradients led to radial compositional inhomogeneity. Current versus temperature measurements of the Be-chalcogenide films at elevated temperatures analyzed assuming thermionic emission over the heterojunction barrier, showed conduction band offsets of 1.2 eV for the BeSe_0.41Te_0.59/As/Si and 1.3 eV for the BeSe/As/Si heterostructures. At room temperature, current density through BeSe/Si and BeSe_0.41Te_0.59/Si films was mid-10 ^{− 9}A cm ^{− 2}at 0.1 MV cm ^{− 1}, similar to previously reported values for ZnS/Si, while BeTe/Si films had orders of magnitude higher current density, possibly due to interfacial recombination.     

Silicon nanocrystals in SiO2 matrix obtained by ion implantation under cyclic dose accumulation

Silicon ions were implanted into the films of silicon oxide obtained by thermal oxidation of silicon wafers in a damp oxygen. Accumulation of the implantation dose was performed either in one step or cyclically in step-by-step mode, and after each stage of implantation the samples were annealed in a dry nitrogen. The second series of the samples differed from the first one by the formation of SiO₂ matrix that included additional annealing in the air at 1100 °C for 3 h before ion implantation. X-ray absorption near edge structure (XANES) was obtained with the use of synchrotron radiation. Two absorption edges were observed in all of Si L_2,3-spectra. One of them is related to elementary silicon while the other one-to silicon in SiO₂. The fine structure of the first one indicates the formation of nanocrystalline silicon nc-Si in SiO₂ matrix. Its atomic and electron structure depends on the technology of formation. For both series of samples, a cyclical accumulation of the total dose Φ=10¹⁷ cm⁻² (for the total time of annealing—2 h) resulted in the appearance of more distinct structure in the range of absorption edge for the elementary silicon as compared with the case of single-step accumulation dose. In the more “dense” oxide of the samples from the second series, the probability of formation of silicon nanocrystals in a thin near-surface region of the implanted layer was reduced. These results can be interpreted with the account of the previously obtained photoluminescence, Raman scattering and electron microscopy data for these samples.     

Preparation and characterization of ZnO thin films prepared by thermal oxidation of evaporated Zn thin films

In this paper, the experimental results regarding some structural, electrical and optical properties of ZnO thin films prepared by thermal oxidation of metallic Zn thin films are presented.Zn thin films (d=200–400 nm) were deposited by thermal evaporation under vacuum, onto unheated glass substrates, using the quasi-closed volume technique. In order to obtain ZnO films, zinc-coated glass substrates were isochronally heated in air in the 300–660 K temperature range, for thermal oxidation.X-ray diffraction (XRD) studies revealed that the ZnO films obtained present a randomly oriented hexagonal nanocrystalline structure. Depending on the heating temperature of the Zn films, the optical transmittance of the ZnO films in the visible wavelength range varied from 85% to 95%. The optical band gap of the ZnO films was found to be about 3.2 eV. By in situ studying of the temperature dependence of the electrical conductivity during the oxidation process, the value of about 2×10⁻² Ω⁻¹ m⁻¹ was found for the conductivity of completely oxidized ZnO films.     

Effects of carbon substitution via ball-milling in MgB2

In this study, we have synthesized the C-doped MgB₂ samples by solid-state reaction after mixing Mg powder with the attrition-milled B and C powders. The C added powders were mixed according to the nominal atomic ratio of Mg(B_1−xC_x)₂ with x = 0, 0.005, 0.015, 0.025, and 0.05. The analysis of X-ray diffraction showed that the (1 1 0) peaks, which correspond to the lattice parameter a, were shifted to a higher angle as the increasing of carbon contents. These results indicated that the B substitution for C became more dominant at higher doping level of C. The sample having the composition of Mg(B_0.975C_0.025)₂ gave the best critical current density (Jc) of ≈5000 A cm⁻² at 8 T and 5 K, as compared to the ≈1200 A cm⁻² for the undoped sample.