Method of orthogonally polarized bands for analysis of luminescence anisotropy and dichroism in lithium fluoride crystals with color centers

A method for analysis of polarization anisotropy of radiation and dichroism in crystals is proposed that is based on excitation of luminescence by the probe field having the form of a system of light bands with orthogonal polarization. The theoretical and experimental results concerning application of this method to the analysis of lithium fluoride crystals with radiation-produced color centers are presented. The specificity of optical microimage recording in crystals containing a collection of color centers is investigated.     

热处理对ZnO:Zn荧光薄膜结晶性能的影响

用热处理方法对电子束蒸发制备的ZnO:Zn荧光薄膜分别进行400,600℃退火处理。采用X射线衍射、X射线光电子能谱、扫描电子显微镜、光致发光光谱等方法,表征了ZnO:Zn荧光薄膜的结构、成分、形貌、发光性能。在ZnO:Zn荧光薄膜的X射线衍射谱和扫描电子显微镜照片中,可以看出经退火处理后结晶状况大大改善,多晶结构趋于规则,晶粒更加均匀且膜层结构更加致密。在ZnO:Zn荧光薄膜的光致发光谱中,检测到490nm处发光峰,认为一价氧空位(V_O)充当发光中心,且薄膜的光致发光强度受热处理温度的影响很大。实验表明随着退火温度的升高,薄膜的结晶程度提高,弥补了薄膜晶体表面的表面缺陷,薄膜的发光性能不断提高。     

不同退火条件对纳米多孔氧化铝薄膜光致发光的影响

以草酸为电解液,采用二次阳极氧化法制备出了纳米多孔氧化铝薄膜,经不同退火温度和退火气氛处理氧化铝薄膜后,通过分析其光致发光光谱得出：相同的退火气氛中, 退火温度T≤600 ℃ 时,T=500 ℃具有最大的光致发光强度;退火温度T≥700 ℃时,随着退火温度的升高,样品的发光强度增大。在不同的退火气氛中,多孔氧化铝薄膜随着退火温度的升高,发光峰位改变不同,即在空气中退火处理后,随着退火温度的升高,发光峰位蓝移,而在真空中退火处理后,发光峰位并不随退火温度的升高而变化;通过对1 100 ℃高温退火处理后的氧化铝薄膜的光致发光曲线的高斯拟合,可以看出,经退火处理后的多孔氧化铝,主要存在三个发光中心,发光曲线在350～600 nm范围内对应三个发射峰, 发射波长分别为387,410,439 nm。相同的退火温度下,空气中退火得到的氧化铝薄膜的光致发光强度大于真空中退火处理后的氧化铝薄膜。基于实验结果,结合X射线色散能谱(EDS)、红外反射光谱等表征手段,探讨了多孔氧化铝薄膜的发光机制,并对经过不同退火条件得到的多孔氧化铝薄膜的光致发光特性的改变做出了合理的解释。     

Luminescence excitation spectra and characteristics of luminescence centers with overlapping absorption bands

For an ensemble of different types of luminescence centers with overlapping absorption bands, with no restrictions on the optical densities, we have obtained relations describing the luminescence excitation spectra for each type of center. We consider transformations of the relations in some limiting cases. We suggest a procedure for using the equations obtained to determine the characteristics of the luminescence centers. Some of these procedures have been experimentally implemented in study of intrinsic radiation color centers in lithium fluoride crystals. We have determined the ratios of the luminescence quantum yields for F₂ and F₃⁺ color centers, and we have observed that a major role is played by nonradiative transitions in deactivation of the first excited singlet state of F₃⁺ centers. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 365–371, May–June, 2008.     

The photoluminescence excitation spectra of multicomponent media

With no restrictions on the value of optical density, we derive an equation that describes the photoluminescence excitation spectra of separate components with overlapping absorption bands in a multicomponent medium. Based on the equation obtained, we propose methods for measuring the ratios of absorption optical densities of the components and quantum yields of their luminescence. The applicability of the proposed methods is demonstrated by measuring the characteristics of coumarin and porphyrin dissolved in different proportions in ethanol. We have also measured the quantum yield and luminescence decay time of the radiationinduced color centers F ₃ ⁺ in the lithium fluoride crystal and calculated probabilities of radiative and nonradiative transitions from the first excited singlet state of these centers.     

Formation of defects in lithium fluoride ceramics upon irradiation with femtosecond laser pulses

The interaction between femtosecond laser radiation in the filamentation mode and lithium fluoride optical ceramics is investigated experimentally. It is shown that irradiating optical ceramics based on lithium fluoride with femtosecond laser pulses in the near infrared spectral region effectively produces luminescence centers characteristic of radiation-colored single crystals.     

氧离子注入微晶金刚石薄膜的微结构与光电性能研究

本文系统研究了氧离子注入剂量和退火温度对含有Si-V发光中 心的微晶金刚石薄膜的微结构和光电性能的影响. 结果表明, 氧离子注入并在较高温度退火有利于提高薄膜中Si-V中心的发光强度. 当氧离子注入剂量从10¹⁴ cm^-2增加到10¹⁵ cm^-2时, 薄膜中Si-V发光强度增强. Hall效应测试结果表明退火后薄膜的面电阻率降低. 不同温度退火时, 氧离子注入薄膜的Si-V发光强度较强时, 薄膜的面电阻率增加, 说明Si-V发光中心不利于提高薄膜的导电性能. Raman光谱测试结果表明, 薄膜中缺陷数量的增多会增强Si-V的发光强度, 而降低薄膜的导电性能. 关键词： 金刚石薄膜 氧离子注入 电学性能 Si-V缺陷     

磁控共溅射法制备的Zn2GeO4多晶薄膜结构及其光致发光研究

用射频磁控共溅射方法在不同温度的单晶硅基片上生长薄膜,然后在800℃真空环境下对薄膜进行退火处理,成功获得了结晶状态良好的Zn₂GeO₄多晶薄膜.利用X射线衍射(XRD),X射线光电子能谱(XPS)和原子力显微镜(AFM)对薄膜进行了结构、成分和形貌分析,研究了基片温度对三者的影响. 结果显示,当基片温度升高到400℃以上时,薄膜中的Zn₂GeO₄晶粒在(220)方向上显示出了明显的择优取向. 当基片温度在500—600℃范围内,有利于GeO₂结晶相的形成. XPS显示薄膜中存在着Zn₂GeO₄,GeO₂,GeO,ZnO四种化合态. 同时,随着基片温度的升高,晶粒尺寸增大且薄膜表面趋于平整. 薄膜的光致发光在绿光带存在中心波长为530和550nm两个峰,应该归因于主体材料Zn₂GeO₄中两个不同的Ge²⁺的发光中心. 关键词： 射频磁控溅射 2GeO₄')" href="#">Zn₂GeO₄ 荧光体     

反应溅射氧化锌薄膜的结构特点及性质

以金属Zn(纯度为99.99%)作为靶材,采用离子束反应溅射法在玻璃衬底上溅射沉积了一系列ZnO薄膜样品。通过对薄膜样品X射线衍射(XRD)谱的分析,发现尽管溅射条件不同,但是ZnO薄膜只沿(0002)晶面取向生长。衬底温度和溅射气体的氧分压对薄膜沿c轴取向生长有影响,其中衬底温度的影响较明显。溅射过程中发现衬底温度为360℃最适合(0002)晶面的生长,在此温度下溅射获得了完全沿c轴取向生长且衍射峰最强的ZnO薄膜。室温下测量了ZnO薄膜的发射光谱,发现薄膜在紫外区(364nm附近)、蓝绿区(470nm附近)有较强的发光峰,在紫光区(398nm附近)、蓝光区(452nm附近)和红外区(722nm附近)有较弱的发光峰。ZnO薄膜在空气中退火,对薄膜的结构、发光和电学性质都有一定影响。合适的退火温度可以促进薄膜沿c轴的取向生长;退火后ZnO多晶薄膜的晶粒比未退火的略大;退火使部分发光峰的位置发生偏移并使薄膜的发光强度增强;退火使薄膜的电阻率显著增大,薄膜的电阻率随氧分压的增大而增大。     

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Quasi-crystal aluminum-doped zinc oxide (AZO) films were prepared by in situ radio frequency (RF) magnetron sputtering (sputtering without annealing) on glass substrates. The influence of deposition parameters on the optoelectronic and structural properties of the in situ deposited quasi-crystal AZO films was investigated in order to compare resulting samples. X-ray diffraction (XRD) patterns show that the quasi-crystal AZO thin films have excellent crystallization improved with increase of the RF power and substrate temperature, with an extremely preferential c-axis orientation exhibit sharp and narrow XRD pattern similar to that of single-crystal. Field emission scanning electron microscopy (FESEM) images show that quasi-crystal AZO thin films have uniform grains and the grain size increase with the increase of RF power and substrate temperature. Craters of irregular size with the columnar structure are observed in the quasi-crystal AZO thin films at a lower substrate temperature while many spherical shaped grains appeared at a higher substrate temperature. The average optical transmittance of all the quasi-crystal AZO films was over 85% in the 400-800 nm wavelength range. The resistivity of 4.176 × 10⁻⁴ Ω cm with the grain size of 76.4891 nm was obtained in the quasi-crystal AZO thin film deposited at 300 °C, under sputtering power of 140 W.     

Effect of annealing on the structural, optical and electrical properties of ZnO thin films by spray pyrolysis

Zinc oxide thin films have been deposited on glass substrates at a substrate temperature of 673 K by spray pyrolysis. The samples are annealed in ambient atmosphere at various temperatures. The effect of annealing on structural, electrical, and optical properties of ZnO films has been investigated. X-ray diffraction patterns show that crystallinity of the ZnO films has been improved after annealing. The morphology of ZnO thin films is studied by atomic force microscopy. The tensile strain (compressive stress) is found to decrease with increase in annealing temperature which indicates the relaxation of tensile strain in ZnO thin films. A decrease in energy band gap is observed with increase of annealing temperature. The mechanism of blue-green luminescence of ZnO thin film has been analyzed. The resistivity is found to decrease with annealing temperature.     

Storing energy in lithium fluoride crystals irradiated with femtosecond laser pulses

The release of energy in the form of the light sum of thermally stimulated luminescence (TSL), stored under conditions of self-focusing and the multiple filamentation of femtosecond laser radiation during the interaction between model wide-bandgap dielectric crystals of lithium fluoride is studied. It is shown that F₂ color centers are important centers of emission in the TSL process.     

Influence of substrate activation process on structural and optical properties of ZnS thin films

ZnS thin films were deposited on glass substrates by a chemical bath deposition method using a substrate activation process in which aluminum ions become “contaminants” that act as a nucleation center for active components within the deposition solution. The structure and morphology results demonstrate that the films have a ZnS sphalerite crystal structure with a particle size less than 15 nm, and the films consist of small homogeneous grains. The effects of the substrate activation process on the band gap energies and donor-acceptor pair luminescence process were also investigated. A green emission centered at 502 nm was produced due to donor-acceptor transitions from the aluminum acceptor to the ionized and substitution aluminum centers (Al³⁺).     

高频溅射生长ZnS∶Tb，F薄膜的结构与发光

本文采用Ｘ射线衍射和阴极射线发光技术对溅射法生长的ＺｎＳ∶Ｔｂ，Ｆ薄膜的发光光谱和薄膜的微观结构进行了研究，得出了激晶薄膜的晶粒尺寸与发光强度的关系．讨论了稀土离子的价态对掺杂稀土微晶薄膜的发光性质与晶粒尺寸的关系的影响．     

高频溅射生长ZnS:Tb,F薄膜的结构与发光

本文采用X射线衍射和阴极射线发光技术对溅射法生长的ZnS:Tb,F薄膜的发光光谱和薄膜的微观结构进行了研究,得出了激晶薄膜的晶粒尺寸与发光强度的关系.讨论了稀土离子的价态对掺杂稀土微晶薄膜的发光性质与晶粒尺寸的关系的影响.     

Structure and photoluminescence properties of ZnS films grown on porous Si substrates

ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.     

Investigations on vacuum-evaporated CSZ thin films for thermal barrier applications

Ceria-stabilized zirconia (CSZ) thin films have been developed over Ni-based alloy substrate by vacuum evaporation method using an electron beam. X-ray diffraction (XRD) analysis of the film heat treated at different temperatures reveals monoclinic phase stabilization. Transmission measurements of the films annealed at different temperatures, in the wavelength region 300–1,100 nm, indicate that the band gap energy of the films lies between 3.6 and 3.8 eV. Refractive index of the films was found to increase with the increase in the annealing temperature. Micro hardness of the films increases nonlinearly with the increase in annealing temperature, indicating an improvement in the hardness of the films. Thermal conductivity studies of the CSZ-coated substrate show a nonlinear decrease with the increase in annealing temperature. Surface investigations of the CSZ films confirm an increase in grain size and a decrease in surface roughness with the increase in annealing temperature of the films. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.     

纳米ZnO薄膜可见发射机制研究

利用溶胶－凝胶法 （Sol-Gel）制备了纳米ZnO薄膜,获得了高强的近紫外发射室温下测量了样品的光致发光谱(PL )、吸收谱(ABS)、X射线衍射谱(XRD).X射线衍射(XRD)的结果表明：纳米ZnO薄膜呈多晶态,具有六角纤锌矿结构和良好的C轴取向;发现随退火温度升高,（002）衍射峰强度显著增强,衍射峰的半高宽（FWHM）减小、纳米颗粒的粒径增大.由吸收谱(ABS)给出了样品室温下带隙宽度为3.30 eV.在PL谱中观察到二个荧光发射带,一个是中心波长位于392 nm附近强而尖的紫带,另一个是519 nm附近弱而宽的绿带研究了不同退火温度样品的光致发光峰值强度的变化关系,发现随退火温度升高,紫带峰值强度增强、绿带峰值强度减弱,均近似呈线性变化.证实了纳米ZnO薄膜绿光发射主要来自氧空位(Vo)形成的浅施主能级与锌空位(VZn)形成的浅受主能级之间的复合,或氧空位(Vo)形成的深施主能级上的电子至价带顶的跃迁;紫带来自于导带中的电子与价带中的空位形成的激子复合.     

Specific features of luminescence properties of nanostructured aluminum oxide

Aluminum oxide nanopowders are prepared by the gas phase method and characterized according to the particle sizes and the phase composition. Samples of the nanostructured ceramic material are produced by pressing and annealing in air. The photoluminescence and cathodoluminescence spectra of the Al₂O₃ nanostructured ceramic material and α-Al₂O₃ anion-defect single crystals are investigated under comparable conditions. The luminescence bands of centers formed by oxygen vacancies are revealed in the spectra of two types of samples. The nanostructured ceramic material is characterized by the appearance of a new luminescence band at 3.4 eV and a decrease in the luminescence decay time. The inference is made that the characteristic features of the luminescence of the nanostructured ceramic material can be associated with the presence of non-equilibrium phases and the specific features of relaxation processes.     

Effect of neutron irradiation of colorless sapphire (leucosapphire) single crystals on their absorption and luminescence spectra

Features of the thermoradiative changes in the optical absorption and luminescence spectra of leucosapphire (colorless sapphire) crystals irradiated by neutron fluences within the range 5·10¹⁵ to 5·10¹⁹ cm⁻² have been studied in the visible region. The stepwise character of these processes was established as well as the basic steps involved in bleaching the induced color of the wafers as a result of isochronal annealing. Some anomalies have been observed in the temperature dependence of the optical density of the 460–620 nm bands, the activation energies for the color centers as well as the color center concentrations have been calculated, and the nature of the radiation-induced centers has been analyzed. An analytical expression is proposed to describe the accumulation kinetics for the centers during irradiation of the crystals by reactor neutrons. It is concluded that there is an interconnection between, for example, the 460 nm color centers and the 540 nm luminescence centers, and that there is a common mechanism for the process of radiation-induced defect formation, initially responsible for their formation in the crystal. The possible effect of reabsorption of radiation on the behavior of the Y(Φ) curve in the irradiated material is discussed. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 2, pp. 247–251, March–April, 2007.