Correlation between the size and photoluminescence spectrum of quantum dots in InAs-QD/GaAs

A computational method for determining the real sizes of quantum dots based on the data of atomic force microscopy (AFM) is suggested. It is shown that the experimentally observed measurement error (for the AFM method) of the sizes of the pyramidal quantum dots with a base edge of a ～ 30–46 nm, stemming from convolution, is approximately equal to a quarter of the curvature radius of the AFM probe. Calibration curves of the dependence of the photoluminescence-peak positions of InAs-QD/GaAs heterostructures (in the range 900–1800 nm) on the sizes of the quantum dots measured with the probes whose curvature radii were from from 10 to 100 nm are established.     

碳纳米管薄膜场蒸发效应

在超高真空系统中对基于丝网印刷方法制备的碳纳米管薄膜的场蒸发效应进行实验研究. 实验发现, 碳纳米管薄膜样品存在场蒸发现象, 蒸发阈值场在10.0-12.6 V/nm之间, 蒸发离子流可以达到百皮安量级; 扫描电子显微镜分析和场致电子发射测量结果表明, 场蒸发会使碳纳米管分布变得更加不均匀, 会导致薄膜的场致电子发射开启电压上升(240→300V)、场增强因子下降(8300→4200)、蒸发阈值场上升(10→12.6V/nm), 同时使得薄膜场致电子发射的可重复性明显变好. 场蒸发也是薄膜自身电场一致性修复的表现, 这种修复并非表现在形貌上, 而是不同区域场增强因子之间的差距会越来越小, 这样薄膜场致电子发射的可重复性和稳定性自然会得到改善.     

锯齿型石墨烯纳米窄带中量子霍尔体系的电场调控

应用含自洽格点在位库仑作用的Kane-Mele模型,研究锯齿型石墨烯纳米窄带平面内横向电场对边界带能带结构和量子自旋霍尔(QSH)体系的影响.研究结果显示,当电场强度较弱时,外加电场的方向可以调控自旋向下的两个边界带一起朝不同方向移动,导致波矢q=0.5处自旋向下的两个纯边界态的能量简并劈裂方向可由电场调控;当电场强度进一步增强到超过0.69 V/nm,自旋向下的两个边界带出现较大带隙,能带反转,而自旋向上的电子结构无能隙,系统呈现半金属性,同时QSH体系不再是B类.特别当电场强度为1.17 V/nm时,在自旋向下能带的能隙中,q=0.5处存在自旋向上的纯边界态,意味着在8格点边界处可以产生自旋向上的纯边界电流.当电场强度持续增加时,QSH系统从B类到C类经历3个阶段的变化.当电场强度超过1.42 V/nm后,自旋向上的两个边界带也出现能带反转,分别成为导带和价带,系统成为C类的普通量子霍尔体系.     

Exponential absorption edge in hydrogenated α-Si films

Optical and photoelectric measurements demonstrate that hydrogenated amorphous silicon prepared by glow discharge decomposition of silane has an exponential optical absorption edge, over the photon energy range 1.4–1.8 eV with a slope of 0.05–0.08 eV. Evidence is presented that the photogeneration efficiency is unity at room temperature and independent of electric field (10²?10⁴ V/cm^?1) and photon energy (1.2–2.2 eV).     

Field emission patterns with atomic resolution of single-walled carbon nanotubes by field emission microscopy

Electron emission properties of single-walled carbon nanotubes (SWCNTs) assembled on a tungsten tip were investigated using field emission microscopy (FEM). The transmission electron microscopy (TEM) micrograph confirmed the existence of an SWCNT bundle on the W tip. Under appropriate experimental conditions,a series of FEM patterns with atomic resolution were obtained. These patterns arose possibly from the field emission of the open end of an individual (16,0) SWCNT protruding from the SWCNT bundle. The magnification factor and the resolution under our experimental conditions were calculated theoretically. If the value of the compression factor β was set at β= 1.76, the calculated value of the magnification factor was in agreement with the measured value. The resolving powerof FEM was determined by the resolution equation given by Gomer. The resolutionof 0.277 nm could be achieved under the typical electric field of 5.0×107 V/cm, which was close to the interatomic separation 0.246 nm between carbon atoms along the zigzag edge at the open end for the (16, 0) SWCNT. Consequently, our experimental results were further supported by our theoretical calculation.     

Investigating the interaction of x-ray free electron laser radiation with grating structure

The interaction of free electron laser pulses with grating structure is investigated using 4.6±0.1 nm radiation at the FLASH facility in Hamburg. For fluences above 63.7±8.7 mJ/cm², the interaction triggers a damage process starting at the edge of the grating structure as evidenced by optical and atomic force microscopy. Simulations based on solution of the Helmholtz equation demonstrate an enhancement of the electric field intensity distribution at the edge of the grating structure. A procedure is finally deduced to evaluate damage threshold.     

SiO2and Si nanoscale patterning with an atomic force microscope

The use of an atomic force microscope (AFM) as a nanolithographic tool is demonstrated. A photoresist layer several nanometre thin isindented by the vibrating AFM tip, where software control switches the tapping force from the imaging to the patterning mode. The resist pattern is transferred into a 10 nm SiO₂layer on Si(100) by wet chemical etching resulting in 20–40 nm wide lines. Subsequent transfer into the Si substrate using anisotropic KOH etching formed 60 nm wide V grooves.     

Superconducting properties of V/Fe superlattices

We report measurements on the superconducting properties of V/Fe superlattices with various layer thicknesses. These samples were prepared with a novel UHV evaporator which can produce up to twenty different samples in the same run. The Fe layer, a strong pair breaker, suppresses the superconducting transition temperature in a systematic way. When the V layer thickness is on the order of the BCS coherence length and the Fe layer is only a few atomic planes thick, a 2D–3D crossover has been observed in the temperature dependence of the parallel upper critical field H_C2∥. This implies the coexistence of superconductivity and ferromagnetismm. We observe three dimensional behavior for thinner Fe layers (～1 atomic plane) and two dimensional behavior for thicker Fe layers (greater than 10 atomic planes).     

Rectification effect in poly-p-xylylene-cadmium sulfide graded nanocomposites

The hybrid poly-p-xylylene-cadmium sulfide nanocomposites characterized by gradients of concentrations and sizes of CdS nanoparticles along the lines of an applied electric field have been synthesized using the vapor deposition polymerization in an inhomogeneous electric field. The maximum concentration of cadmium sulfide can exceed 10 vol %, while the average effective sizes of the nanoparticles depend on the concentration and do not exceed 5 nm. The synthesized thin-film nanocomposites exhibit a quantum confinement effect. According to the estimates obtained from the shift of the absorption band edge, the radius of nanoparticles is 2.7 nm near the negative electrode and 3.5 nm near the positive electrode. It has been found that the sample formed in an electric field of 10 kV/cm manifests a rectification effect, which can be associated with the gradient of nanoparticle sizes. The measurements of current-voltage characteristics and photoconductivity have demonstrated that the synthesized samples possess high photoconductivity. The photocurrent in the sample prepared in an electric field of 10 kV/cm can exceed the dark current by two orders of magnitude, and the rectification effect in this case disappears.     

Relaxation of the edge atoms of a stepped Cu(410) surface

The edge atom position of the stepped Cu(410) surface has been investigated with low energy ion scattering (LEIS) using 10–20 keV H⁺. It is possible to determine the atomic position by utilizing atomic shadowing effects. The scattered particles are analysed with a time-of-flight spectrometer. This means that we can detect scattered hydrogen leaving the copper surface in the neutral state as well as in the charged state, so the influence of neutralization of the scattered particles along different outgoing trajectories is eliminated. We find an inward relaxation of the edge atoms; assuming that this relaxation takes place in the (100) plane it amounts to about 8% of the interlayer spacing.     

Ab initio study of field emission from graphitic ribbons

We have performed first-principles calculations on field emission (FE) from graphitic ribbons within the time-dependent density-functional theory. An important finding is that dangling bond states localized at clean edges are major contributors to FE current. H termination makes the FE current small due to the disappearance of the dangling-bond states. FE is found not to occur from the edge state of a H-terminated zigzag ribbon even when the state is at the Fermi level. The results of the FE current from graphitic ribbons give approximately 1 microA for maximum of FE current from a circular edge of graphitic sheets with approximately 1 nm diameter of an open-ended multiwalled carbon nanotube under a high electric field of approximately 1 V/A.     

An AlGaN/GaN HEMT with a reduced surface electric field and an improved breakdown voltage

A reduced surface electric field in an AlGaN/GaN high electron mobility transistor(HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas(2-DEG) channel as an electric field shaping layer.The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions.Compared with the HEMTs with conventional sourceconnected field plates and double field plates,the HEMT with a Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge.By optimizing both the length of Mg-doped layer,L m,and the doping concentration,a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure,respectively.In a device with V GS = -5 V,L m = 1.5 μm,a peak Mg doping concentration of 8×10 17cm-3 and a drift region length of 10 μm,the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

Resonant interaction of femtosecond radiation with a cloud of cold <Superscript>87</Superscript>Rb atoms

The resonant interaction of ⁸⁷Rb atoms in a magneto-optical trap with femtosecond laser radiation in the spectral range 760–820 nm has been investigated experimentally. It has been demonstrated that femtosecond laser radiation with a spectral width of 10 nm interacts with an atomic ensemble as a set of spectrally narrow modes and as an ionizing laser field simultaneously. The dynamics of trap loading in the presence of ionization by femtosecond radiation has been studied, and the 5D _5/2 level population produced by an additional weak laser field has been measured.     

Influence of high magnetic fields on the superconducting transition of one-dimensional Nb and MoGe nanowires

The effects of a strong magnetic field on superconducting Nb and MoGe nanowires with diameter approximately 10 nm have been studied. We have found that the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory of thermally activated phase slips is applicable in a wide range of magnetic fields and describes well the temperature dependence of the wire resistance, over 11 orders of magnitude. The field dependence of the critical temperature, T(c), extracted from the LAMH fits is in good quantitative agreement with the theory of pair-breaking perturbations that takes into account both spin and orbital contributions. The extracted spin-orbit scattering time agrees with an estimate tau(s.o.) approximately tau(variant Planck's over 2pic/Ze(2))(4), where tau is the elastic scattering time and Z is the atomic number.     

Photoconducting nanocrystalline lead sulphide thin films obtained by chemical bath deposition

A chemical bath deposition method of preparing photoconducting nanocrystalline lead sulphide (PbS) thin films at room temperature (RT) is described. The aqueous bath of lead acetate, thiourea, and ammonium hydroxide produce films of about 100?nm thicknesses in 45?minutes. X-ray diffraction (XRD) studies show that these films are nanocrystalline cubic PbS with 10?nm crystallite size. Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) revealed that the films consist of spherical grains of sizes 100 to 200?nm. The transmission spectra of the films show onset of absorption edge around 850?nm and the bandgap is around 1.65?eV. The films are p-type with dark conductivity of 2.5×10^?3?S/cm and mobility of 0.07?cm²/V?s. The photosensitivity is 6–7 for an illumination of 80?mW/cm² from a halogen lamp (50?W, 12?V). Transient photoconductivity measurements reveal short and long life times of minority carriers. Thermoelectric and photothermoelectric studies show that photoconductivity in these films is mainly due to photogenerated majority carriers.     

Growth and field emission properties of nanotip arrays of amorphous carbon with embedded hexagonal diamond nanoparticles

Nanotip arrays of amorphous carbon with embedded hexagonal diamond nanoparticles were prepared at room temperature for use as excellent field emitters by a unique combination of anodic aluminum oxide (AAO) template and filtered cathodic arc plasma (FCAP) technology. In order to avoid nanopore array formation on the AAO surface, an effective multi-step treatment employing anodization and pore-widening processes alternately was adopted. The nanotips were about 100 nm in width at the bottom and 150 nm in height with density up to 10¹⁰ cm⁻². Transmission electron microscopy investigation indicates that many nanoparticles with diameters of about 10 nm were embedded in the amorphous carbon matrix, which was proved to be hexagonal diamond phase by Raman spectrum and selected-area electron diffraction. There is no previous literature report on the field emission properties of hexagonal diamond and its preparation at room temperature under high-vacuum condition. The nanotip arrays with hexagonal diamond phase exhibit a low turn-on field of 0.5 V/μm and a threshold field of 3.5 V/μm at 10 mA/cm². It is believed that the existence of hexagonal diamond phase has improved the field emission properties.     

Experimental study of annular bright field (ABF) imaging using aberration-corrected scanning transmission electron microscopy (STEM)

Experimental parameters used in the annular bright field (ABF) imaging method were tested using images simulated with the multislice method. Images simulated under identical conditions were found to agree well with experimental images. The ABF technique was shown to be relatively insensitive to the sample thickness and the defocus. In experimental ABF images, atomic columns exhibited dark contrast over a wide range of specimen thickness and defocus values, from 10 to 70 nm and ?20 to +20 nm, respectively. A series of diffraction patterns at atomic columns, obtained using the diffraction imaging method, exhibited higher intensities in their central regions (0–11 mrad) for light elements and in their peripheral regions (11–22 mrad) for heavy elements. The results indicated that the contrast of light elements is enhanced by subtraction of the central region of the transmitted beam, since this is blocked by a circular mask in the ABF-STEM technique. Thus, the overall contrast of light elements is greatly improved, allowing them to be clearly visualized.     

Study of the effects of grain size on the mechanical properties of nanocrystalline copper using molecular dynamics simulation with initial realistic samples

Abstract

Molecular dynamics simulations have been performed to study the mechanical properties of a columnar nanocrystalline copper with a mean grain size between 9.0 and 24 nm. A melting–cooling method has been used to generate the initial samples: this method produces realistic samples that contain defects inside the grains such as dislocations and vacancies. The results of uniaxial tensile tests applied to these samples reveal the presence of a critical mean grain size between 16 and 20 nm, for which there is an inversion of the conventional Hall–Petch relation. The principal mechanisms of deformation present in the samples correspond to a combination of dislocations and grain boundary sliding. In addition, this analysis shows the presence of sliding planes generated by the motion of perfect edge dislocations that are absorbed by grain boundaries. It is the initial defects present inside the grains that lead to this mechanism of deformation. An analysis of the atomic configurations further shows that nucleation and propagation of cracks are localised on the grain boundaries especially on the triple grains junctions.     

Optical characteristics of a low-density electric discharge bromine vapor plasma in the UV-VUV spectral region

The emission characteristics of a glow discharge in bromine vapor have been investigated in the spectral region 130–350 nm. The current-voltage characteristics and the emission spectra of the glow discharge with an interelectrode gap of 10 cm and a discharge tube 14 mm in inner diameter have been studied. The emission characteristics have been optimized as functions of the bromine vapor pressure and the power deposited into the plasma. It has been shown that, at a low pressure of the bromine vapor, the emission spectrum of the lamp is determined by the spectral lines of atomic bromine in the range 158–164 nm, which are analogous to the known lines (such as those at 206.2 nm) of atomic iodine in an iodine-containing glow discharge plasma. As the pressure of the bromine vapor increases above 100 Pa, the intensity of these emission lines of the bromine atom decreases and the lamp spectrum is formed by bromine molecular bands in the form of a continuum with sharp boundaries (λ = 165–300 nm).