Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs.     

ZnCuInS量子点的变温光致发光

测量了红色和深红色发光的ZnCuInS量子点在100~300 K温度范围内的光致发光光谱,研究了ZnCuInS量子点的发光机理,对ZnCuInS量子点的发光峰值能量、线宽和积分强度与温度的关系进行了细致的分析。在ZnCuInS量子点中观察到一种反常的发光峰值能量随着温度升高而增加的现象,同时发现ZnCuInS量子点的发光线宽很宽,约为300 meV,拟合积分强度与温度的关系曲线所得到的激活能为100 meV。这些结果表明,ZnCuInS量子点的发光不可能只来源于一种发光中心,而应该是来源于ZnCuInS量子点内部及表面的多种缺陷相关的多种发光中心组合。     

Photoinduced charge redistribution and its influence on excitonic states in Zn(Cd)Se/ZnMgSSe/GaAs quantum-well heterostructures

The photoinduced charge redistribution in Zn(Cd)Se/ZnMgSSe/GaAs quantum-well heterostructures under different conditions of optical excitation has been investigated using scanning probe microscopy and optical spectroscopy in the temperature range from 5 to 300 K. Excitation of the samples by radiation with a photon energy greater than the band gap of Zn(Cd)Se leads to the accumulation of electrons in quantum wells, which is detected using scanning spreading resistance microscopy. For moderate excitation densities (up to 25 W/cm²) and at temperatures ranging from 80 to 100 K, the density of a quasi-two-dimensional electron gas formed in quantum wells is several orders of magnitude higher than the density of electron-hole pairs generated by the excitation radiation. The excess electron concentration in the quantum well leads to a broadening of the exciton resonances and to an increase in the relative intensity of the donor-bound exciton emission line and also determines the increase in the luminescence quantum yield with increasing excitation intensity. An additional illumination with a photon energy less than the band gap of Zn(Cd)Se decreases the concentration of excess electrons in quantum wells. The influence of the additional illumination is observed at a temperature of approximately 100 K and almost completely suppressed at 5 K. The obtained results are explained in terms of the formation of a potential barrier for electrons at the ZnMgSSe/GaAs interface and by the specific features of recombination processes in the electron-hole system containing impurity centers with different charge states.     

Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

Self-assembled InAs/GaAs (001) quantum dots (QDs) were grown by molecular beam epitaxy using ultra low-growth rate. A typical dot diameter of around 28 ± 2 nm and a typical height of 5 ± 1 nm are observed based on atomic force microscopy image. The photoluminescence (PL) spectra, their power and temperature dependences have been studied for ground (GS) and three excited states (1–3ES) in InAs QDs. By changing the excitation power density, we can significantly influence the distribution of excitons within the QD ensemble. The PL peak energy positions of GS and ES emissions bands depend on an excitation light power. With increasing excitation power, the GS emission energy was red-shifted, while the 1–3ES emission energies were blue-shifted. It is found that the full width at half maximum of the PL spectra has unusual relationship with increasing temperature from 9 to 300 K. The temperature dependence of QD PL spectra shown the existence of two stages of PL thermal quenching and two distinct activation energies corresponding to the temperature ranges I (9–100 K) and II (100–300 K).     

Energy scaling of 4.3 μm room temperature Fe:ZnSe laser

We demonstrate a fourfold increase of the output energy of the gain-switched mid-IR Fe:ZnSe laser. Iron doping of the ZnSe polycrystalline samples was realized using a postgrowth thermal-diffusion method from the metal film. Gain-switched Er:Cr:YSGG (2.8 μm) laser pumped Fe:ZnSe lasing was studied in a Fabry-Perot cavity over a 236-300 K temperature range. The maximum output energy reached 4.7 mJ at 4.3 μm and 3.6 mJ at 4.37 μm at 236 K and 300 K and was limited only by available pump energy. The laser threshold was about 8 mJ and was practically unchanged over the studied temperature range. The laser slope efficiencies, measured with respect to the input pump energy, decreased from 19% to 16% with an increase of temperature from 236 to 300 K. The output radiation featured a Gaussian spatial profile with M(2) = 2.6.     

Stabilization of the Soliton Transported Bio-energy in Protein Molecules in the Improved Model

We study the stabilization of the soliton transported bio-energy by the dynamic equations in the improved Davydov theory from four aspects containing the feature of free motion and states of the soliton at the long-time motion and at biological temperature 300 K and behaviors of collision of the solitons by Runge-Kutta method and physical parameter values appropriate to the $\alpha$-helix protein molecules. We prove that the new solitons can move without dispersion at a constant speed retaining its shape and energy in free and long-time motions and can go through each other without scattering. If considering further influence of the temperature effect of heat bath on the soliton, it is still thermally stable at biological temperature 300 K and in a time as long as 300 ps and amino acid spacings as large as 400, which shows that the lifetime of the new soliton is at least 300 ps, which is consistent with analytic result obtained by quantum perturbation theory. These results exhibit that the new soliton is a possible carrier of bio-energy transport and the improved model is possibly a candidate for the mechanism of this transport.     

Temperature dependent characteristics of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy

We report on the temperature dependent lasing characteristics of InAs/GaAs quantum dot lasers under continuous wave mode. The five-stacked InAs quantum dots were grown by gas-source molecular beam epitaxy with slightly different thickness. Ridge waveguide laser with stripe width of 6 μm was processed on the growth structure. The characteristic temperature was measured as high as infinity in the temperature range of 80–180 k. With the increase of injection current, the lasing spectra of laser diode broaden gradually at low temperature of 80 k. However, when the operation temperature increases from 80 to 300 K, the width of lasing spectrum reduces gradually from 40 to 2.0 nm. The lasing process is obviously different from that of a reference quantum well laser which widens its width of lasing spectra by increasing operation temperature. These experiments demonstrate that a carrier transfer from the smaller size of dots into larger dots caused by thermal effect play an important role in the lasing characteristic of quantum dot lasers. In addition, the laser can operate at maximum temperature of 80 °C under continuous wave mode with a maximum output power of 52 mW from one facet at 20 °C. A wavelength thermal coefficient of 0.196 nm/K is obtained, which is 2.8 times lower than that of QW laser. The low wavelength thermal coefficient of quantum dot laser is mainly attributed to its broad gain profile and state filling effects.     

Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots

Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski–Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H₂-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.     

新型酞菁的光致发光性质研究

研究了2,3-四-(2-异丙基一5-甲基苯氧基)氢酞菁在10,77,177和300 K下石英衬底上的浇铸膜和单晶硅衬底上真空镀膜(约200 nm厚)在300 K下光致发光光谱.氢酞菁的浇铸膜光致发光光谱在上述温度下均出现荧光发射和磷光发射峰,在177和300 K下出现了1 673 nm激基缔合物峰.该峰的出现与分子抗聚集能力的强弱有关,在300 K激基缔合物峰比在177 K下的峰强,从氢酞菁分子结构特点讨论了形成激基缔合物的原因.随着温度的升高,可以观察到荧光发射峰渐渐减弱而激基缔合物峰变强.由于浇铸膜和真空镀膜的酞菁分子聚集态不同导致了斯托克司位移的差异,真空镀膜的发光峰峰值在1 140 nm左右,与酞菁浇铸膜的峰值差别较大.浇铸膜的发光峰的半高宽为300 nm,而真空镀膜发光峰的半高宽为100 nm左右.     

InGaAsN量子阱的光致发光谱研究(英文)

我们测量了低N组分的InGaAsN/InGaAs/GaAs量子阱材料的光致发光(PL)谱,测量温度范围从13K到300K。实验结果显示,InGaAsN的PL谱的主峰值的能量位置随温度的变化呈现出反常的S型温度依赖关系。用Varshni经验公式对实验数据进行拟合之后,发现在低温下InGaAsN量子阱中的载流子是处于局域态的。此外,我们还测量了样品在不同的温度、不同的能量位置的瞬态谱,结果进一步证实了:在低温下,InGaAsN的PL谱谱峰主要是局域态激子的复合发光占据主导地位,而且InGaAsN中的载流子局域态主要是由N等电子缺陷造成的涨落势引起的。     

Photoluminescence study of ZnCdSe/ZnSe quantum dot systems

The optical properties of the populated ZnCdSe/ZnSe quantum dots have been studied by photoluminescence spectra measured with different laser excitation apertures at temperatures from 22 to 300 K. The differences of spectral features between small and large excitation spot suggest the existence of quantum dot size fluctuation in the system. The temperature evolution of photoluminescence spectral features revealed that two types of quantum dots with different densities and sizes coexist in ZnCdSe/ZnSe system. The energy spacings of the two kinds of quantum dot emissions are about 50 meV at various temperatures. The thermally activated lateral transfer processes of carriers populated in the two sorts of quantum dots are investigated by temperature dependences of spectral intensities.     

Nonstandard behavior of a negative ion reaction at very low temperatures

We have studied the negative ion reaction NH2-+H_{2}-->NH_{3}+H- in the temperature range from 300 to 8 K. We observe a strongly suppressed probability for proton transfer at room temperature. With decreasing temperature, this probability increases, in accordance with a longer lifetime of an intermediate anion-neutral complex. At low temperatures, a maximum in the reaction rate coefficient is observed that suggests the presence of a very small barrier at long range or a quantum mechanical resonance feature.     

Photovoltaic spectroscopy of InGaAsP/InP multiple quantum wells

Photovoltaic Spectroscopy is used to study lattice matched Au/InGaAsP/InP multiple quantum wells at 4.2 < T < 300 K. Four quantum transitions are clearly identified in the spectra and their temperature shift mapped. The Au/InGaAsP Schottky barrier is found to be nearly temperature independent at φ_B ≃ 0.68 eV, and the binding energy of the 11H associated exciton estimated at E_b ≃ 11 meV. The 11H exciton displays a small electric field shift, to the red at low T, changing over to a blue shift at higher temperatures.     

Temperature‐dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP‐MOCVD have been studied by means of deep ultraviolet time‐integrated photoluminescence (PL) and time‐resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV‐AlGaN/AlGaN MQWs PL emission (E_p) exhibits a similarly anti‐S‐shaped behavior (blueshift – accelerated redshift – decelerated redshift): E_p increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E_p redshift tends towards zero. This temperature‐induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Edge electroluminescence of single-crystal silicon at 80 K: Structures based on a high-efficiency solar cell

The spectral, kinetic, and energy characteristics of edge luminescence of silicon light-emitting diodes (LEDs) with radiating surface area of 0.055 cm² are studied at a temperature of 80 K over a wide range of pulsed currents. The LEDs are fabricated by cutting a high-efficiency solar cell. In contrast to a number of less effective silicon LEDs studied earlier, the external quantum efficiency of our LEDs at a fixed current at 80 K is higher than that at 300 K and its maximum value is about 0.4%. Despite the occurrence of Auger recombination, a record-high emissive power per unit surface area P = 0.2 W/cm² is attained at a pulsed current of 12 A. It is shown that this record value is achieved largely because the mechanism of radiative recombination is changed at large currents. The conditions are analyzed under which the free-exciton luminescence is changed to electron-hole plasma luminescence.     

稀磁半导体Hg0.89Mn0.11Te磁化强度及磁化率的研究

利用MPMS-7(magnetic property measurement system)型超导量子磁强计对垂直布里奇曼法生长的Hg_0.89Mn_0.11Te晶片磁化强度变化规律进行了测量.试验采用了两种不同的外场和冷却条件.首先在5 K恒温下，-5200到5200 kA/m范围内改变磁场强度进行了测定.然后维持800 kA/m恒定磁场，分别在有场冷却和无场冷却条件下，从5到300 K范围内改变温度，研究了变温条件下的磁化特性.并采用分子场近似模型，用类布里渊函数，最小二乘法对磁化强度随磁场强度变化的实验结果进行拟合和分析，结果表明，Mn²⁺离子之间存在反铁磁相互作用.磁化率和温度关系分析表明：在测试范围内Hg_0.89Mn_0.11Te是单一的顺磁相，在高温区磁化率和温度服从居里-万斯定律，呈线性关系，低于40 K时，磁化率和温度的关系偏离居里-万斯定律，表现出顺磁增强现象. 关键词： 0.89Mn_0.11Te')" href="#">Hg_0.89Mn_0.11Te 磁化强度 磁化率 类布里渊函数     

强磁场下Cernox^TM温度传感器的磁致电阻效应研究

以Cernox-1070温度传感器为研究对象,研究了其在磁场强度0-16 T和4.2-300K温区下的磁致电阻效应.实验结果表明：CX-1070温度传感器受磁场的影响较小,在16T、4.2-300K的磁效应值为-0.19-2.38%,产生的最大测量误差为0.11K;15-50K温区为磁效应最低的温度区间,在50-300...     

Real-space direct visualization of the layer-dependent roughening transition in nanometer-thick Pb films

By means of variable-temperature scanning tunneling microscopy and spectroscopy we studied the thickness-dependent roughening temperature of Pb films grown on Cu(111), whose electronic structure and total energy is controlled by quantum well states created by the spatial confinement of electrons. Large scale STM images are employed to quantify the layer population, i.e., the fraction of the surface area covered by different Pb thicknesses, directly in the real space as a function of temperature. The roughening temperature oscillates repeatedly with bilayer periodicity plus a longer beating period, mirroring the thickness dependence of surface energy calculations. Conditions have been found to stabilize at 300 K Pb films of particular magic thicknesses, atomically flat over microns.     

Optical and electrical properties of propolis films

The basic electrical and optical properties of films made of propolis, which is a natural, biologically active, organic compound, are studied. Photoluminescence is found to exist at room temperature with a maximum at 434 nm. The conduction activation energy in the temperature range 283–300 K is 2.9 eV and correlates with the optical band gap.