A Raman study of lattice vibrations in II–VI semiconductors doped with 3<Emphasis Type="Italic">d</Emphasis> elements

Room-temperature Raman spectra were obtained for powder samples of Zn_1?xNixSe and Zn_1?yCr_ySe compounds and for a single-crystal Zn_1?xNi_xSe (x = 0.0025) sample in the temperature range 5–140 K. The results obtained are interpreted in terms of large-scale lattice shear strains induced by 3d elements in these solid solutions.     

X-ray reflectivity and photoelectron spectroscopy of superlattices with silicon nanocrystals

The structural properties and features of the chemical composition of SiO _x N _y /SiO₂, SiO _x N _y /Si₃N₄, and SiN _x /Si₃N₄ multilayer thin films with ultrathin (1–1.5 nm) barrier SiO₂ or Si₃N₄ layers are studied. The films have been prepared by plasma chemical vapor deposition and have been annealed at a temperature of 1150°С for the formation of silicon nanocrystals in the SiO _x N _y or SiN _x silicon-rich layers with a nominal thickness of 5 nm. The period of superlattices in the studied samples has been estimated by X-ray reflectivity. The phase composition of superlattices has been studied by X-ray electron spectroscopy using the decomposition of photoelectron spectra of the Si 2p, N 1s, and O 1s levels into components corresponding to different charge states of atoms.     

Synthesis and vibrational spectra of solid solutions based on lanthanum gallate

The synthesis conditions for single-phase solid solutions based on lanthanum gallate, LaGa_{1 ? x} Mg _x O_{3 ? δ}(x= 0–0.25, solid-phase method) and La_{1 ? y}Sr_yGa_{1 ? y}Mg_yO_{3 ? δ}(y= 0–0.2, glycine nitrate method), have been investigated. The structural parameters have been calculated using X-ray powder diffraction data. The IR and Raman spectra have been analyzed. Regularities in the changes in the structural parameters and vibrational spectra with composition are established.     

Mechanical and Dynamic Stability of Complete and Nonstoichiometric 3<Emphasis Type="Italic">C</Emphasis>-Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>C<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript> from Ab Initio Calculations

The energies of formation of vacancies in the carbon and silicon sublattices, the independent elastic constants, the all-round compression, shear and Young’s moduli, and the anisotropy coefficients are determined for the complete and nonstoichiometric cubic phases of 3C-Si_xC_y (x, y = 1.0–0.75) by ab initio methods of the band theory. In the formalism of the density functional perturbation theory (DFPT), the phonon dispersion dependences are obtained for these phases (the comparison with the experiment is given for the complete phase). It is shown that the mechanical characteristics of the phases become strongly anisotropic upon the transition from 3C-SiC_0.875 to 3C-SiC_0.75. It is established from the analysis of the phonon dispersion curves that the 3C-SiC_0.875 and 3C-SiC_0.75 phases, in contrast to the complete 3C-SiC phase, are dynamically unstable at T = 0 K.     

Raman spectroscopy of SrB<Subscript>4</Subscript>O<Subscript>7</Subscript> single crystals in the temperature range 300–1273 K

The polarized Raman spectra of SrB₄O₇ (SBO) single crystals are studied in detail in the temperature range of 300–1273 K. The TO, LO, and IO phonon lines of A₁, A₂, B₁, and B₂ symmetries of rhombic SBO at 300 K are identified. The behavior of the Raman spectra of SBO crystals is studied upon heating up to their melting. The relation of Raman spectra with the structure of boron–oxygen fragments, as well as the transformation of spectra in the process of melting of SBO crystals, is discussed.     

Effect of chromium and tellurium impurities on the thermoelectric parameters of galena

Concentration dependences of the Seebeck coefficient, resistivity, and thermal conductivity of thermoelectric PbS crystals with chromium (0 < x ≤ 0.01) and tellurium (0 < y ≤ 0.03) impurities are examined in the temperature region of 300–800 K. It is shown that the introduction of chromium increases the number of free electrons in PbCr _x S _1–x crystals and reduces the Seebeck coefficient. However, an increase in the concentration of tellurium in PbCr _x S _1–x–y Te _y alloys raises the Seebeck coefficient while simultaneously reducing the thermal conductivity. As a result, the thermoelectric efficiency of PbCr _x S _1–x–y Te _y crystals increases. The reasons for the observed effects are discussed.     

Spectroscopy of optical centers of Eu<Superscript>3+</Superscript> ions in partially stabilized and stabilized zirconium crystals

The structure of the optical centers of Eu³⁺ ions in tetragonal (ZrO₂)_1–x–y (Y₂O₃) _x (Eu₂O₃) _y (х = 2.7–3.6; y = 0.1) and cubic (ZrO₂)_1–x–y (Y₂O₃) _x (Eu₂O₃) _y (х = 8–38; y = 0.1–0.5) crystals of solid solutions on the basis of zirconium dioxide is studied using the methods of optical and Raman-scattering spectroscopy. Characteristic optical centers of Eu³⁺ ions with different crystalline environments are revealed in the above compounds.     

Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy

Epitaxial layers in a system of InAs_1–x–ySb_yP_x solid solutions in the composition range of 0 < x < 0.72 were obtained on an InAs(001) substrate by metalorganic vapor phase epitaxy (MOVPE). The layer-by-layer analysis of obtained structures by secondary ion mass spectrometry showed a gradient change in the composition along the growth direction. A dramatic change in the composition at the layer/substrate heteroboundary was observed for the quaternary InAsSbP solid solutions due to the presence of radicals of arsenic compounds in the gas phase. Upon MOVPE deposition on the InAs substrate in a system of InAsSbP solid solutions, the decrease in the solid-phase content of arsenium by less than (1–x–y) < 0.3 resulted in a suppression of the deposited layer gradientness, as well as suppressed fluctuations in the composition in the initial transition layer.     

Intersubband cyclotron resonance of holes in strained Ge/GeSi(111) heterostructures with germanium wide quantum wells and cyclotron resonance of 1<Emphasis Type="Italic">L</Emphasis> electrons in GeSi layers

The submillimeter (?ω=0.5–5 meV) magnetoabsorption spectra of strained Ge/Ge_1?xSi_x(111) multilayer heterostructures with thick Ge layers (d_Ge=300–850 Å, d_GeSi≈200 Å, x≈0.1) are investigated at T=4.2 K upon band-gap optical excitation. It is revealed that the absorption spectra contain cyclotron resonance lines of 1L electrons localized in GeSi solid solution layers (unlike the previously studied structures with thin Ge layers as quantum wells for 3L electrons). The absorption spectra of the samples with thick Ge layers (d_Ge=800–850 Å) exhibit cyclotron resonance lines of holes due to transitions from the lower Landau levels in the first quantum-well subband to the Landau levels belonging to the third and fifth higher subbands.     

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si<Subscript>1−x</Subscript> Ge<Subscript>x</Subscript>/Ge/Si<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript> type-I quantum wells

This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si_1?x Ge _x /Si_1?y Ge _y heterointerfaces in Γ _15C , Γ _2′C and L upper bands minima, as well as the room-temperature strained (vs. relaxed) band gaps deduced from the classical model-solid theory. Based upon the obtained data, we propose a type-I W-like Si_1?y Ge _y /Si_1?x Ge _x /Ge/Si_1?x Ge _x /Si_1?y Ge _y quantum wells heterostructure optimized in terms of compositions and thicknesses. Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias voltage. An accurate investigation of the optical properties of this heterostructure is done by calculating the energies of the interband transitions and their oscillator strengths. Moreover, a detailed computation of the bias-voltage evolution of the absorption spectra is presented. These calculations prove the existence of type-I band alignment at Γ _2′C point in compressively strained Ge quantum wells grown on relaxed Ge-rich Si_1?y Ge _y buffers. The strong absorption coefficient (> 8 × 10³ cm^-1) and the large Stark effect (0.1 eV @ 2 V) of the Γ _2′C transitions thresholds open up perspectives for application of these heterostructures for near-infrared optical modulators.     

Synthesis,structure, and optical and photocatalytic properties of quasi-one-dimensional ZnO doped with Со<Subscript>3</Subscript>O<Subscript>4</Subscript> and carbon

One-dimensional nanocomposites Zn_1–x Co _x O_1–y С _у :nCo₃O₄ and solid solutions Zn_1–x Co _x O_1–y С _у , which are promising photocatalysts for the oxidation of toxic organic compounds in visible light, are obtained via the thermolysis of Zn_1–x Co _x (HCOO)(OCH₂CH₂O)_1/2 (0.1 ≤ x ≤ 0.5) precursor in a controlled gaseous atmosphere.     

Optical surface polaritons of TM type at the nonlinear semiconductor–nanocomposite interface

TM-polarized optical surface polaritons in a nonlinear semiconductor–nanocomposite guiding structure have been considered. The nanocomposite consists of alternating layers of bismuth-containing garnet ferrite (BIG, Lu_{3 – x}Bi_xFe_{5 – y}Ga_yO₁₂) and gallium–gadolinium garnet (Gd₃Ga₅O₁₂), and the semiconductor (n-InSb) has a cubic nonlinearity and is characterized by two components of the nonlinear susceptibility tensor. With allowance for the anisotropy of the optical properties of the nanocomposite, caused by the magnetization of the BIG layers, the dispersion relation has been obtained and analyzed and its solutions are shown to split into two pairs of high- and low-frequency branches. The influence of the electric field at the interface on the wave characteristics and the existence domains of nonlinear surface TM polaritons has been studied. By solving the inverse problem of finding the profile of the longitudinal electric component of the surface polariton, it has been found that the nonlinearity gives rise to soliton-like wave fields.     

Multicomponent <Emphasis Type="Italic">n</Emphasis>-(Bi,Sb)<Subscript>2</Subscript>(Te,Se,S)<Subscript>3</Subscript> solid solutions with different atomic substitutions in the Bi and Te sublattices

The thermoelectric properties of n-Bi_{2 ? x} Sb _x Te_{3 ? y ? z} Se _y S _z solid solutions are studied in the temperature range 300–550 K. It is shown that an increase in the parameter β determining the figure-of-merit Z of the material is observed in compositions with the optimally related effective mass of the density of states m/m ₀, the carrier mobility μ₀, and the lattice thermal conductivity κ _L . Within the temperature range 300–350 K, the parameter β and the figure-of-merit Z are found to increase in solid solutions with substitutions in both bismuth telluride sublattices Bi → Sb and Te → Se, S (x = 0.16, y = z = 0.12) for optimum electron concentrations. An increase in the electron concentration and substitutions of atoms only in the tellurium sublattice bring about an increase in the β parameter and the value of Z at higher temperatures. Within the range 350–450 K, the parameters β and Z are observed to increase in a solid solution with a low content of substituted atoms in the tellurium sublattice Te → Se, S for y = z = 0.09 and, at higher temperatures up to 550 K, in compositions with tellurium substituted by selenium only, with increasing content of substituted atoms.     

Investigation of the cation distribution in perovskite-like oxides with Mössbauer spectroscopy

Complex perovskite-like oxides, such as LnFe_2/3Mo_1/3O₃ orthoferrites, Ln_8?ySr_yCu_8?xFe_xO₂₀ (8-8-20), Pr₄BaCu₄FeO_13-δ(4-1-5), YBa_2-yLa _y Cu_3-xFe _x O_7-δ and Y_1-yCa _y Ba _y La _y Cu_3-xFe _x O_7-δ (1-2-3), are studied by means of Mössbauer spectroscopy. At room temperature, the spectra of the orthoferrites contain only magnetic components. The spectra of the 1-2-3 compounds contain only magnetically disordered components: iron atoms substitute for copper at Cu(1) sites, taking various configurations: planar squares, quadratic pyramids, and octahedra. Cuprates 8-8-20 and 4-1-5 have a wide diversity of spectra. In the 8-8-20 oxides, a phase related to the pyramidal environment of the iron cations is present at any iron concentration. In all the perovskites, iron cations become magnetically ordered only at octahedral sites of the structure.     

The Nernst-Ettingshausen coefficient in the normal phase of doped HTSCs of the YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>y</Subscript> system

The temperature dependence of the Nernst-Ettingshausen coefficient Q(T) in the normal phase of doped HTSCs of the yttrium system was studied. The main features characterizing the behavior of this coefficient were revealed, and the character and mechanism of the effect that various nonisovalent substituents exert on the Q(T) dependence were analyzed. It is shown that the narrow-band model permits one not only to describe all the specific features observed in the Q(T) curves but also to perform a simultaneous quantitative analysis of the temperature dependences of four kinetic coefficients (the electrical resistivity and the Seebeck, Hall, and Nernst-Ettingshausen coefficients) with the use of a common set of model parameters characterizing the band structure and carrier system in the normal phase of an HTSC. This approach was employed to determine the carrier mobilities and the asymmetry of the dispersion curve in the systems studied (YBa₂Cu₃O_y, y = 6.37–6.91; YBa₂Cu_3?xCo_xO_y, x = 0–0.3; Y_1?xCa_xBa₂Cu₃O_y, x = 0–0.25; Y_1?xCa_xBa_2?xLa_xCu₃O_y, x = 0–0.5) and to analyze the effect of the substitutions involved on the variation of these parameters.     

Extreme Electromechanical Characteristics and Microstructural Features of Ferro-Piezoceramics Based on Lead Titanate

Microstructural features and electrophysical parameters of a number of solid solutions based on PbTiO₃ are investigated. Solid solutions (Pb_{1–3/2x + z/2}Nd _x )(Ti_1–y–zMn _y Inz)O₃ and Pb_1–xCa _x Ti_1–y(W_1/2Co_1/2) _y O₃ with extreme values of the mechanical Q-factor and electromechanical anisotropy are chosen as the objects of investigation. The ferro-piezoceramic samples are obtained through conventional sintering and hot pressing. X-ray structural and microstructural studies are performed, and the complex elastic, dielectric, and piezoelectric parameters of experimental samples are measured. The frequency dependences of complex parameters of the experimental samples have been studied at frequencies of up to 40 MHz. It is established that the extreme values of the mechanical Q-factor and piezoelectric anisotropy of the investigated PbTiO₃-based solid solutions are due to microstructural features associated with the technological regimes of ferropiezoceramic fabrication.     

Thermodynamic study of compounds of the Nd-Ba-Cu-O system

Standard enthalpies of formation for solid solutions of composition Nd_{1 + x} Ba_{2 ? x} Cu₃O _y (x = 0–0.8, y = 6.65–7.24) from oxides were determined by solution calorimetry. The heat capacity of NdBa₂Cu₃O_6.87 phase was measured in the range 5–320 K by low-temperature adiabatic calorimetry. The absolute entropy S ^o(T), the difference of enthalpies H ^o(T)-H ^o(0 K), and the reduced Gibbs energy Φ^o(T) = S ^o(T)–[H ^o(T)–H ^o(0)]/T were calculated on the basis of smoothed dependence C _p (T) in the 0–320 K range. An assessment was made for the heat capacities and the absolute entropies of solid solutions Nd_1+x Ba_2?x Cu₃O _y . The obtained set of thermodynamic parameters can be used for the calculation of phase equilibria in the Nd-Ba-Cu-O system.     

Effect of cation substitution on the lattice dynamics and ferroelectric instability of cubic BaTiO<Subscript>3</Subscript> and BaZrO<Subscript>3</Subscript> doped with Bi and La ions

The spectra of lattice vibration frequencies of solid solutions Ba_{1 ? x} Bi_2x/3? _x/3Ti(Zr)O₃ and Ba_{1 ? x} La _x Ti(Zr)_{1 ? x/4}? _x/4O₃ are calculated in terms of a generalized Gordon-Kim model with inclusion of the dipole and quadrupole polarizabilities. Over the entire concentration range, the calculated phonon spectra contain a ferroelectric soft mode. The effect of various interactions on the ferroelectric instability of these solid solutions is studied. It is shown that the character of ferroelectric instability is largely determined by the mechanism of charge compensation.     

Synthesis,structure, and properties of BIFENBVOX

Solid solutions Bi₄V_2-x Fe _x/2Nb _x/2O_11-δ (х?=?0.05–1.0) and Bi₄V_2-х-y Fe _x Nb _y O_11–δ (with fixed x or y?=?0.2 and variable х or y?=?0.2–0.5 with step 0.1) were synthesized by the standard ceramic technology in the temperature range 773–1113 K and by mechanochemical activation method using Bi₂O₃, V₂O₅ Fe₂O₃, and Nb₂O₅ oxides as initial compounds. The formation of solid solutions was studied. Ranges of stability and temperature values of phase transitions for different polymorphous modifications were defined using dylatometric and thermo gravimetric studies. The morphology and the local chemical composition of the ceramic samples were studied. Samples with concentration of dopants x?>?0.3 contain two phases; both major and impurity phases are solid solutions of the BIFENBVOX type although the dopants atoms distribution between them is random. The thermal expansion coefficients (TEC) were measured. The electrical conductivity of ceramic samples was investigated in a wide range of temperatures. The highest conductivity values among the studied solid solutions are observed for the sample with a small amount of dopants x?=?0.25.     

Spectroscopy of charge transfer states in Mg<Subscript>1 – <Emphasis Type="Italic">x</Emphasis> </Subscript>Ni<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>O

Photoluminescence and photoluminescence excitation spectra of solid solution Mg_1–xNi_xO (x = 0.008) have been analyzed. The contributions of charge transfer electronic states and nonradiative Auger relaxation to the formation of the photoluminescence spectrum are discussed.