Genesis of the anomalous Hall effect in CeAl<Subscript>2</Subscript>

The Hall coefficient R _H , resistivity ρ, and Seebeck coefficient S of the CeAl₂ compound with fast electron density fluctuations were studied in a wide temperature range (from 1.8 to 300 K). Detailed measurements of the angular dependences R _H (? T, H≤70 kOe) were performed to determine contributions to the anomalous Hall effect and study the behavior of the anomalous magnetic R _H ^am and main R _H ^a components of the Hall signal of this compound with strong electron correlation. The special features of the behavior of the anomalous magnetic component R _H ^am were used to analyze the complex magnetic phase diagram H-T determined by magnetic ordering in the presence of strong spin fluctuations. An analysis of changes in the main contribution R _H ^a (H, T) to the Hall effect made it possible to determine the complex activation behavior of this anomalous component in the CeAl₂ intermetallic compound. The results led us to conclude that taking into account spin-polaron effects was necessary and that the Kondo lattice and skew-scattering models were of very limited applicability as methods for describing the low-temperature transport of charge carriers in cerium-based intermetallic compounds. The effective masses and localization radii of manybody states in the CeAl₂ matrix were estimated to be (55–90)m₀ and 6–10 Å, respectively. The behaviors of the parameters R _H , S, and ρ were jointly analyzed. The results allowed us to consistently describe the transport coefficients of CeAl₂.     

Role of Ge incorporation in the physical and dielectric properties of Se<Subscript>75</Subscript>Te<Subscript>25</Subscript> and Se<Subscript>85</Subscript>Te<Subscript>15</Subscript> glassy alloys

The effect of Ge additive on the physical and dielectric properties of Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has been investigated. It is inferred that on adding Ge, the physical properties i.e., average coordination number, average number of constraints and average heat of atomization increase but lone pair electrons, fraction of floppy modes, electronegativity, degree of crosslinking and deviation of stoichiometry (R) decrease. The effect of Ge doping on the dielectric properties of the bulk Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has also been studied in the temperature range 300–350 K for different frequencies (1 kHz–5 MHz). It is found that, with doping, the dielectric constant ε^′ and dielectric loss ε^″ increase with increase in temperature and decrease with increase in frequency. The role of the third element Ge, as an impurity in the two pure binary Se₇₅Te₂₅ and Se₈₅Te₁₅ glassy alloys has been discussed in terms of the nature of covalent bonding and electronegativity difference between the elements used in making the aforesaid glassy systems.     

Nonergodic state of relaxation ferroelectric Cd<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>7</Subscript> in a constant electric field

The temperature dependence of the residual polarization of the nonergodic relaxation state (NERS) obtained from the measurements of pyroelectric current during zero-field heating (ZFH) in the temperature interval from 10 to 295 K is investigated for the Cd₂Nb₂O₇ relaxation system in two cases: (1) after sample cooling in a constant electric field E (FC) from T = 295 K to a preset temperature, which is much lower than the “freezing” temperature of the relaxation state (T _f ≈ 182 K), field removal, and subsequent cooling in zero field (ZFC) to T = 10 K and (2) after ZFC from T = 295 K to the same temperature below T _f , application of the same field, and FC to T = 10 K. The behavior of the P _r ^FC (T) and P _r ^ZFC (T) dependences is analyzed. In the field E < 2 kV/cm, the P _r ^ZFC curves as functions of 1/T have a broad low-intensity peak in the region T ≈ T _f , which vanishes in stronger fields, when the P _r ^FC (1/T) curves intersect at T ≈ T _f and have no anomalies. The difference in the behavior of P _r ^ZFC (T) and P _r ^FC (T) indicates the difference in the nature of NERS formed during ZFC and FC of the system upon a transition through T _f . In the ZFC mode, NERS exhibits glasslike behavior; in the FC regime, features of the ferroelectric behavior even in the weak field. Analogous variations of P _r ^ZFC (T) and P _r ^FC (T) in a classical ferroelectric KDP are also given for comparison.     

High-frequency EPR of Cr<Superscript>2+</Superscript> ions in CdGa<Subscript>2</Subscript>S<Subscript>4</Subscript>

High-frequency broad-band (65–240 GHz) EPR is used to study impurity centers of bivalent chromium in a CdGa₂S₄ crystal. It is found that the EPR spectra correspond to tetragonal symmetry. The spin Hamiltonian H = βB · g · S + B ₂ ⁰ O ₂ ⁰ + B ₄ ⁰ O ₄ ⁰ + B ₄ ⁴ O ₄ ⁴ with the parameters B ₂ ⁰ =23659±2 MHz, B ₄ ⁰ =1.9±1 MHz, |B ₄ ⁴ |=54.2±2 MHz, g_‖=1.93±0.02, and g_⊥=1.99±0.02 is used to describe the observed spectra. It is concluded that chromium ions occupy one of the tetrahedrally coordinated cation positions.     

Optical and x-ray diffraction studies of the symmetry of distorted phases of the (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>ZrF<Subscript>7</Subscript> crystal

(NH₄)₃ZrF₇ single crystals were grown, and polarization-optical and x-ray diffraction studies were performed on powders and crystalline plates of various cuts over a wide temperature range. Phase transitions are revealed at temperatures T _1↑ = 280 K, T _2↑ = 279.6 K, T _3↑ = 260–265 K, and T _4↑ = 238 K on heating and at T _1↓ = 280 K, T _2↓ = 269–270 K, T _3↓ = 246 K, and T _4↓ = 235 K on cooling. The sequence of changes in symmetry is established to be as follows: O _h ⁵ (Z = 4) ? D _2h ²⁵ (Z = 2) ? C _2h ³ (Z = 2) ? C _i ¹ (Z = 108) ? monoclinic²(Z = 216).     

Study of the formation and unimolecular fragmentation of Si<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript>O<Stack><Subscript><Emphasis Type="Italic">m</Emphasis></Subscript><Superscript>+</Superscript></Stack> clusters under ion bombardment

The dependences of the emission and fragmentation of clusters sputtered by Xe⁺ ions from the surface of Si _n O _m ⁺ on the oxygen pressure near the bombarded surface are studied using secondary ion mass spectrometry. It is shown that the process of Si _n O _m ⁺ cluster formation under ion bombardment can be described within the framework of the mechanism of combinatorial synthesis by taking into account the mutual reversibility of the reactions of formation and unimolecular decay.     

Low-energy Ce spin excitations in CeFeAsO and CeFeAsO<Subscript>0.84</Subscript>F<Subscript>0.16</Subscript>

We use inelastic neutron scattering to study the low-energy spin excitations of polycrystalline samples of nonsuperconducting CeFeAsO and superconducting CeFeAsO_0.84F_0.16. Two sharp dispersionless modes are found at 0.85 and 1.16 meV in CeFeAsO below the Ce antiferromagnetic (AF) ordering temperature of T _N ^Ce ? 4 K. On warming to above T _N ^Ce ? 4 K, these two modes become one broad dispersionless mode that disappears just above the Fe ordering temperature T _N ^Fe ? 140 K. For superconducting CeFeAsO_0.84F_0.16, where Fe static AF order is suppressed, we find a weakly dispersive mode center at 0.4 meV that may arise from short-range Ce-Ce exchange interactions. Using a Heisenberg model, we simulate powder-averaged Ce spin wave excitations. Our results show that we need both Ce spin wave and crystal electric field excitations to account for the whole spectra of low-energy spin excitations.     

Optical characteristics of radiation from N<Stack><Subscript>2</Subscript><Superscript>*</Superscript></Stack> dimers in a barrier discharge

The spectral and power characteristics of radiation of the second positive system of nitrogen (C ³Π _u → B ³Π _g ) in Ar-N₂ and Ar-N₂-Cl₂ mixtures excited by barrier discharge have been studied experimentally. Addition of argon to N₂ increased the radiation power by sixfold. In the triple mixture Ar-N₂-Cl₂ = 210/0.5/0.005, minor chlorine additions increased the intensity of the C ³Π _u → _B ³Π _g transition by 26% compared to Ar-N₂ mixtures. Radiation power density of 2.7 mW/cm² has been achieved. In both binary and triple mixtures, the second positive system of nitrogen was the major contributor to radiation, while the contributions of the fourth positive system of N ₂ ^* (D ³Σ _u ⁺ → B ³Π _g ), the Vegard-Kaplan transition of N ₂ ^* (A ³Σ _u ⁺ → X ¹Σ _g ⁺ ), and the D′ → A′ band of Cl ₂ ^* were negligibly small.     

Specific features of the three-electron <Emphasis Type="Italic">KL</Emphasis><Stack><Subscript>2, 3</Subscript><Superscript>2</Superscript></Stack> ionization of silicon atoms upon near-threshold photoabsorption

The shape and relative intensity of the group of the Kα_5–8 satellites (radiative transitions KL _{2, 3} ² )-L _{2, 3} ³ of Si atoms are experimentally studied upon photoabsorption near and far from the KL _{2, 3} ² ionization threshold. The satellites were excited near the ionization threshold by lines of the characteristic L spectrum and bremsstrahlung radiation from Nb and Mo anodes and far from the threshold by the L spectrum and bremsstrahlung radiation from an Ag anode and by monochromatized Kα_{1, 2} radiation from a Ti anode. It is established that the probability P(L _{2, 3} ² ) of formation of two additional 2p vacancies during KL _{2, 3} ² photoabsorption of Si atoms near the energy threshold is by a factor of 1.5 lower than that during photoionization in a more distant energy region beyond the threshold. At the same time, the P(L _{2, 3} ² )/P(L _{2, 3}) ratio remains invariable for the absorbed photons throughout the energy range studied. It is demonstrated that, as the KL _{2, 3} ² ionization threshold is approached, an intensity redistribution occurs among the components of the group of the Kα_5–8 lines, which reflects a decrease in the excitation cross section ratio σ(⁴ P)/σ(² P) of the ⁴ P and ² P terms of the KL _{2, 3} ² configuration. A conclusion is drawn that the effects of suppression of the generation of P terms of higher multiplicity during the KL _{2, 3} and KL _{2, 3} ² near-threshold photoionizations are of a common nature.     

Critical behavior of La<Subscript>0.825</Subscript>Sr<Subscript>0.175</Subscript>MnO<Subscript>2.912</Subscript> anion-deficient manganite in the magnetic phase transition region

For La _0.825 ³⁺ Sr _0.175 ² +Mn³⁺O _2.912 ^2? anion-deficient manganite, the specific magnetization, the dynamic magnetic susceptibility, and the heat capacity are investigated. This material is found to be an inhomogeneous ferromagnet below the Curie point T _C ≈ 122 K, which is much lower than the Curie point determined for the stoichiometric composition (T _C ≈ 268 K). An increase in magnetic field by two orders of magnitude leads to an increase in the Curie temperature by ΔT ≈ 12 K. The presence of oxygen vacancies leads to the frustration of a part, namely, V _fr ≈ 22%, of the indirect Mn³⁺-O-Mn³⁺ exchange interactions, but the spin glass state is not realized. The ferromagnetic matrix of the material under study is characterized by a scatter in the exchange interaction intensities. The heat capacity is found to exhibit an anomalous behavior. Based on the Banerjee magnetic criterion, it is established that the ferromagnet-paramagnet transition observed for La _0.825 ³⁺ Sr _0.175 ²⁺ Mn³⁺O _2.912 ^2? anion-deficient manganite is a second-order thermodynamic phase transition. The mechanism and origin of the critical behavior of the system under investigation are discussed.     

Frustrated antiferromagnetism in the Sr<Subscript>2</Subscript>YRuO<Subscript>6</Subscript> double perovskite

The spins of Ru⁵⁺ ions in Sr₂YRuO₆ form a face-centered cubic lattice with antiferromagnetic nearest neighbor interaction J≈25 meV. The antiferromagnetic structure of the first type experimentally observed below the Néel temperature T _N =26 K corresponds to four frustrated spins of 12 nearest neighbors. In the Heisenberg model in the spin-wave approximation, the frustrations already cause instability of the antiferromagnetic state at T=0 K. This state is stabilized by weak anisotropy D or exchange interaction I with the next-nearest neighbors. Low D/J～I/J～10^?3 values correspond to the experimental T _N and sublattice magnetic moment values.     

Measurement of the spin structure function <Emphasis Type="Italic">g</Emphasis><Subscript>1</Subscript> at HERMES

New, preliminary results are presented for the deuteron structure function g ₁ ^d , where the kinematic range has been extended to 0.0021<x<0.85 and Q ²>0.1 GeV², to include 7 new data points at low x with respect to previously released results. Within the present statistics, the structure function ratio g ₁ ^d /F ₁ ^d is found to be independent of Q ².     

Dielectric response of a (1000 nm)SrTiO<Subscript>3</Subscript> layer epitaxially grown on (001)La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> to temperature variation and electric field

The structure and dielectric characteristics of the (1000 nm)SrTiO₃ spacer in a (001)SrRuO₃ ‖ (001)SrTiO₃ ‖ (001)La_0.67Ca_0.33MnO₃ trilayer heterostructure grown on a (001)(LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7 substrate have been studied. Both oxide electrodes, as well as the strontium titanate layer, were cube-on-cube epitaxially grown. The unit cell parameter in the SrTiO₃ layer measured in the substrate plane (3.908±0.003 Å) practically coincided with that determined along the normal to the substrate surface (3.909±0.003 Å). The temperature dependence of the real part of the permittivity ?′ of the SrTiO₃ layer in the range 70–180 K fits the relation (?′)^?1 ～ ? ₀ ^?1 C ₀ ^?1 (T-T _C ) well, where C₀ and T_C are the Curie constant and the Curie-Weiss temperature, respectively, for bulk strontium titanate crystals and ?₀ is the free-space permittivity. The data obtained on the temperature dependence of the permittivity of SrTiO₃ films enabled us to evaluate the effective depth of electric field penetration into the manganite electrode (L _e ≈ 0.5 nm) and the corresponding capacitance (C _e ≈1×10^?6 F/cm²) of the interface separating the (001)SrTiO₃ layer from the (001)La_0.67Ca_0.33MnO₃ bottom electrode.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

Effect of the Lattice and Spin-Phonon Contributions on the Temperature Behavior of the Ground State Splitting of Gd<Superscript>3+</Superscript> in SrMoO<Subscript>4</Subscript>

The temperature behavior of the EPR spectra of the Gd³⁺ impurity center in single crystals of SrMoO₄ in the temperature range T = 99–375 K is studied. The analysis of the temperature dependences of the spin Hamiltonian b ₂ ⁰ (T) = b₂(F) + b₂(L) and P ₂ ⁰ (T) = P₂(F) + P₂(L) (for Gd¹⁵⁷) describing the EPR spectrum and contributing to the Gd³⁺ ground state splitting ΔE is carried out. In terms of the Newman model, the values of b₂(L) and P₂(L) depending on the thermal expansion of the static lattice are estimated; the b₂(F) and P₂(F) spin-phonon contributions determined by the lattice ion oscillations are separated. The analysis of b ₂ ⁰ (T) and P ₂ ⁰ (T) is evidence of the positive contribution of the spin-phonon interaction; the model of the local oscillations of the impurity cluster with close frequencies ω describes well the temperature behavior of b₂(F) and P₂(F).     

Multicomponent <Emphasis Type="Italic">n</Emphasis>-(Bi,Sb)<Subscript>2</Subscript>(Te,Se,S)<Subscript>3</Subscript> solid solutions with different atomic substitutions in the Bi and Te sublattices

The thermoelectric properties of n-Bi_{2 ? x} Sb _x Te_{3 ? y ? z} Se _y S _z solid solutions are studied in the temperature range 300–550 K. It is shown that an increase in the parameter β determining the figure-of-merit Z of the material is observed in compositions with the optimally related effective mass of the density of states m/m ₀, the carrier mobility μ₀, and the lattice thermal conductivity κ _L . Within the temperature range 300–350 K, the parameter β and the figure-of-merit Z are found to increase in solid solutions with substitutions in both bismuth telluride sublattices Bi → Sb and Te → Se, S (x = 0.16, y = z = 0.12) for optimum electron concentrations. An increase in the electron concentration and substitutions of atoms only in the tellurium sublattice bring about an increase in the β parameter and the value of Z at higher temperatures. Within the range 350–450 K, the parameters β and Z are observed to increase in a solid solution with a low content of substituted atoms in the tellurium sublattice Te → Se, S for y = z = 0.09 and, at higher temperatures up to 550 K, in compositions with tellurium substituted by selenium only, with increasing content of substituted atoms.     

On the hole scattering anisotropy in the PbSb<Subscript>2</Subscript>Te<Subscript>4</Subscript> layered compound from data on the Nernst-Ettingshausen coefficient

Three independent components of the Nernst-Ettingshausen coefficient tensor Q _ikl are experimentally measured for an anisotropic single crystal of the p-PbSb₂Te₄ layered compound. The components Q ₁₂₃ and Q ₁₃₂ are found to be negative, whereas the component Q ₃₂₁ is positive. The experimental data on the anisotropy of the Nernst-Ettingshausen coefficient are discussed together with the available data on the thermopower, the Hall effect, and the electrical conductivity. The analysis demonstrates that the experimental data on the transport effects in p-PbSb₂Te₄ can be explained within a one-band model of the band spectrum and a mixed mechanism of hole scattering under the assumption that scattering from acoustic phonons and scattering from impurity ions are dominant in the cleavage plane and along the c ₃ trigonal axis, respectively.     

Secondary ion emission from a GaAs single crystal upon bombardment with Bi<Stack> <Subscript> <Emphasis Type="Italic">m</Emphasis> </Subscript> <Superscript>+</Superscript> </Stack> cluster ions

Secondary-ion mass spectra and energy distributions upon bombarding a gallium arsenide single crystal using Bi_m⁺(m = 1–5) cluster ions with energies of 2–12 keV are investigated. The gallium cluster ion yield grew nonadditively with the number of atoms in the cluster projectiles. A quasi-thermal component found in the energy spectra of secondary Ga⁺ and Ga₂⁺ ions is indicative of the occurrence of the thermal spike mode upon cluster ion bombardment. The quasi-thermal component in the yield of atomic Ga⁺ ions upon bombardment with Bi₂⁺–Bi₅⁺–ions is 35–75%.     

Mechanisms of ionization of <Emphasis Type="Italic">F</Emphasis><Subscript>2</Subscript>-centers in laser media on the basis of LiF crystals

F₂ color centers with a superhigh concentration (5000-cm^–1 absorption coefficient at 450 nm) were formed by high-density electron beams in a layer of LiF crystals of micrometer thickness. The F₂-centers excited by high-power nanosecond wide-band optical pulses (the “soft” pumping regime) efficiently amplified the laser radiation and showed high stability under these conditions. A low stability of F₂-centers to laser radiation (the “hard” excitation regime) is explained by the dissociation of (F ₂ ⁺ , F^–) pairs induced by two-step ionization of F₂-centers: (2hν > 4.5 eV) → F₂ → (F₂)* → F ₂ ⁺ + e; F + e → F^–; F ₂ ⁺ + F^– → 3F.     

Magnetic structure of Er<Subscript>5</Subscript>Ge<Subscript>3</Subscript> at 4.2 K

A symmetry analysis of the possible magnetic structures of Er₅Ge₃ in the ground state is performed using the results of measurements of elastic magnetic neutron scattering at 4.2 K. It is shown that the minimum discrepancy factor R _m ≈9.5% corresponds to a modulated collinear magnetic structure in which the magnetic moments of erbium atoms are oriented along the a ₃ axis of the unit cell of the crystal structure and induce an antiferromagnetic longitudinal spin wave (AFLSW). The magnetic structure is characterized by the wave vector k=2π(0, 0, μ /a ₃) (where μ≈0.293) and the modulation period λ≈3.413a ₃. The magnetic ordering temperature T _N ≈38 K is determined from the temperature dependence of the intensity of magnetic reflections. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 9, 2003, pp. 1653–1659. Original Russian Text Copyright ? 2003 by Vokhmyanin, Dorofeev.