电沉积－退火工艺制备铜铟硒太阳能电池薄膜及表征

利用电沉积硒气氛下后续退火的工艺制备出了高结晶质量的铜铟硒薄膜．通过X射线衍射、扫描电子显微镜、拉曼光谱、紫外-可见-近红外光谱和阻抗谱技术对退火后的铜铟硒薄膜进行表征,结果表明530 oC硒化退火后的铜铟硒薄膜具有四方的黄铜矿晶体结构,晶粒尺寸达到微米量级,光学带隙为0.98 eV,经过KCN溶液去除表面高导电性的铜硒化合物后铜铟硒薄膜的载流子浓度在10¹⁶ cm^-3量级．利用硒化退火的铜铟硒薄膜作为光吸收层制备了结构为AZO/i-ZnO/CdS/CIS/Mo/glass的太阳能电池,在AM1.5光照条件下对其电流-电压特性测试后发现面积为0.2 cm²的电池可以达到0.96％的能量转换效率,并对限制电池效率的原因做出了初步的分析和讨论.     

化学浴沉积法制备CdS多晶薄膜

利用化学浴沉积法制备适合于铜铟镓硒薄膜太阳能电池缓冲层材料的CdS多晶薄膜,研究了在不同温度和不同时间下沉积薄膜的性质．薄膜生长开始由ion-by-ion机制控制,随着时间的进行,cluster-by-cluster机制占据主导．薄膜的生长速度随着沉积温度的升高而快速增加,直到达到饱和厚度．并且饱和厚度随温度升高而相应降低．SEM表明随沉积时间增加以及温度升高,薄膜表面形貌从多孔到粗糙的不均匀转变．XRD结果显示,薄膜由立方和六方两相结构组成,控制沉积时间对薄膜的主要晶相结构很关键．所有温度下沉积的CdS     

用磁控溅射法制备Cu薄膜的研究

采用磁控溅射法在玻璃衬底上制备了Cu薄膜 ,应用台阶仪测量Cu膜的厚度 ,研究了薄膜的沉积速率与溅射功率的关系 ;用X射线衍射 (XRD)和扫描电镜Cu对薄膜进行了表征 ,研究了溅射功率对所制备薄膜的影响。制备出致密性和均匀性较好的Cu薄膜。     

金刚石薄膜在多晶铜和磷脱氧铜基片上的生长

分别采用99.99%的多晶铜片和99.95%的磷脱氧铜片作为沉积金刚石薄膜的基片，通过热丝化学汽相沉积法在两种基片上都获得了大面积、自支撑的多晶金刚石膜.使用高分辨率光学显微镜、扫描电子显微镜、Raman光谱和X射线衍射比较分析了两种铜基片上的金刚石膜.脱氧铜上的金刚石膜质量并不亚于多晶铜上的金刚石膜，而且它的成核密度、生长速率以及应力都高于多晶铜上金刚石膜的同类参数.特别采用了退火工艺和优化的生长条件来获得大面积的连续金刚石膜. 关键词：     

铜铟硒薄膜太阳能电池的几个基础问题研究

文章简述了铜铟硒（CIS）薄膜电池的性能特点和研究现状，重点提出了影响其规模化推广的几个基础问题，包括：射频溅射法直接制备CIS薄膜、省略硒化工艺的问题；ZnO替代CdS作为CIS薄膜电池的缓冲层材料的问题；Na^＋离子对CIS薄膜及电池性能的作用及机制问题．这几个基础问题的研究成果，可以为CIS薄膜电池产业化探索新的道路。     

射频磁控溅射法制备ZnS多晶薄膜及其性质

实验采用射频磁控溅射法在玻璃衬底上沉积了ZnS多晶薄膜,研究了沉积气压、退火温度和衬底温度对ZnS薄膜质量的影响.利用X射线衍射(XRD)分析了薄膜的微结构,并计算了内应力值.通过紫外-可见光分光光度计测量了薄膜的透过谱,计算了Urbach能量和禁带宽度.利用扫描电子显微镜(SEM)观察了薄膜的表面形貌.结果表明: 衬底温度为室温时沉积的ZnS薄膜具有较大的压应力,并且内应力值随着工作气压增大而增大,在300 ℃下进行退火处理后内应力松弛,衬底温度为350 ℃时制备的ZnS薄膜内应力小,透过率高,经300 ℃退火处理后结晶质量有所提高. 关键词： ZnS薄膜 射频磁控溅射 内应力     

CdSxTe1-x多晶薄膜的制备与性质研究

采用真空共蒸发方法制备了CdSxTe1 -x 多晶薄膜 ,并用原子力显微镜、x射线衍射和光学透过率谱等研究了CdSxTe1 -x多晶薄膜的结构和性质 .结果表明 :薄膜均匀、致密、无微孔 ,当x≥ 0 5时为n型半导体 ,x <0 5时为p型半导体 .CdSxTe1 -x多晶薄膜的光学能隙随x变化 .结合薄膜的晶格常数和光学能隙得到了薄膜发生相变的组分 ,当x<0 2 5时CdSxTe1 -x 多晶薄膜为立方相 ,当x >0 2 5时为六方结构 .退火后结构没有改变 ,能隙减小 .提出了用CdSxTe1 -x多晶薄膜作为缓冲层的新型结构太阳电池 .     

用射频溅射方法制备的多晶ZnO薄膜的光响应与其结构变化

用射频溅射方法在较高氧压下沉积的多晶的ZnO薄膜,其光响应主要由两部分组成:第一部分来源于膜内晶粒界面所吸附氧原子的光脱附,该部分光响应可使膜的电导率增加两个数量级且响应速度较快;第二部分来源于薄膜表面所吸附氧原子的光脱附,此光响应可使膜的电导率增加4一5个数量级,但响应速度非常缓慢.两部分光响应都来自薄膜的结构变化,膜的结构变化与膜所处环境中气体的种类,压强以及膜的温度有关. 关键词：     

多晶薄膜表面粗化与生长方式转变

采用原子力显微镜研究了磁控溅射多晶薄膜表面粗化行为对归一化沉积温度T_s/T_m(T_s是沉积温度，T_m是材料熔点)的依赖性与薄膜生长方式转变行为.随着T_s/T_m增加，薄膜表面粗糙度增加，而表征粗糙度随时间演化特征的生长指数β历经了先减小再增加的过程.β对T_s/T_m的依赖关系反映了薄膜生长方式的转变行为，即薄膜生长依次由随机生长方式向表面扩散驱动生长方式与异常标度行为生长方式转变.在低于体扩散控制薄膜生长的温度时，晶界扩散机理导致多晶薄膜的表面粗化的异常标度行为. 关键词： 多晶薄膜 表面粗化 温度 生长     

Preparation of boron carbon nitride thin films by radio frequency magnetron sputtering

Boron carbon nitride films were deposited by radio frequency magnetron sputtering using a composite target consisting of h-BN and graphite in an Ar-N₂ gas mixture. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The results suggest that the films are atomic-level hybrids composed of B, C and N atoms. The boron carbon nitride films prepared in the present experiment have a disordered structure. The sputtering power varied from 80 W to 130 W. This sputtering power was shown to have regular effect on the composition of boron carbon nitride films. The samples deposited at 80 W and 130 W are close to the stoichiometry of BC₃N. The sample deposited at 110 W is close to the stoichiometry of BCN. The samples deposited at 100 W and 120 W approach to BC₂N. It is very significant for us to synthesize boron carbon nitride compound with controllable composition by changing the sputtering power.     

直流磁控溅射一步法原位制备MgB2超导薄膜

用MgB2靶,控制直流磁控溅射工作在异常辉光放电或弧光放电状态,在SrTiO3衬底上原位一次性得到了MgB2超导薄膜,其起始转变温度为32K,零电阻温度为15K. 关键词： 高温超导体 超导薄膜 磁控溅射 二硼化镁     

The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing

In order to fabricate AlSb polycrystalline thin films without post annealing, this paper studies a technology of magnetron co-sputtering onto intentionally heated substrate. It compares the structural characteristics and electrical properties of AlSb films which are deposited at different substrate temperatures. It finds that the films prepared at a substrate temperature of 450 oC exhibit an enhanced grain growth with an average grain size of 21 nm and the lattice constant is 0.61562 nm that goes well with unstained lattice constant (0.61355 nm). The ln(σ_dark) ～1/T curves show that the conductivity activation energy is about 0.38 eV when the film is deposited at 450 oC without an annealing. The transmittance and reflectance spectra show that the film deposited at 450 oC has an optical band gap of 1.6 eV. These results indicate that we have prepared AlSb polycrystalline films which do not need a post annealing.     

衬底温度对反应磁控溅射W掺杂ZnO薄膜的微观结构及光电性能的影响

采用直流脉冲反应磁控溅射方法生长W掺杂ZnO（WZO）透明导电氧化物薄膜并研究了衬底温度对薄膜微观结构、组分、表面形貌以及光电性能的影响.实验结果表明,WZO薄膜具有良好的（002）晶面择优取向,且适当的衬底温度是制备优质WZO薄膜的关键因素.随着衬底温度升高,薄膜表面粗糙度先增大后减小;衬底温度较高时,薄膜的结构致密,结晶质量好,电子迁移率高.当衬底温度为325℃时,WZO薄膜获得最低电阻率9.25×10^-3Ω·cm,方块电阻为56.24Ω/□,迁移率为11.8 cm² V^-1·s^-1,其在可见光及近红外区域（400—1500 nm）范围的平均透过率达到85.7%.     

Characteristics of ZnO:In thin films prepared by RF magnetron sputtering

In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10⁻³ Ω cm.     

非平衡磁控溅射法类金刚石薄膜的制备及分析

利用非平衡磁控溅射物理气相沉积技术制备了光滑、致密、均匀的类金刚石薄膜.分析沉积工艺参数对所得类金刚石薄膜的电学特性的影响以及溅射粒子的大小、能量、碰撞及沉积过程中的相变机理后认为：溅射粒子越小、与环境气体分子的碰撞次数越多、与衬底相互作用时具有适当动量等，能够有效提高薄膜中sp^３杂化碳原子的含量.利用拉曼光谱 、纳米力学探针、红外光谱、扫描电镜等分析了所得类金刚石膜的结构、力学及光学性能、 表面形貌等特征.结果表明，类金刚石膜中sp^３杂化碳原子的含量较高，显微硬 度大于11GPa，薄膜光学透过率达到89.4％，折射系数为1.952，沉积速率为0.724μm/h，表 面光滑、致密、均匀，不存在明显的晶粒特征. 关键词： 非平衡磁控溅射 类金刚石膜 拉曼光谱 红外光谱     

Deposition of MgO films by pulsed mid-frequency magnetron sputtering

MgO films were deposited by pulsed mid-frequency magnetron sputtering from metallic targets in the mixture of Ar and O₂ gas. The surface morphology, crystalline structure, and optical properties were characterized by using atomic force microscopy (AFM), X-ray diffraction (XRD), and spectroscopic ellipsometry, respectively. The secondary electron emission coefficients of MgO films were measured by using a self-made apparatus in He gas. A pronounced hysteresis phenomenon of target voltage, current, and deposition rate with increasing and decreasing O₂ flow rate was observed. The structure of films deposited at a metallic mode changes from Mg phase to the mixed Mg and MgO phase, and the films have a very rough surface. All the films deposited at oxide mode have high transparency and smooth surface, and show (2 2 0) preferred orientation growth. The refractive index and extinction coefficient at a wavelength of 670 nm for MgO films deposited at oxide mode with a O₂ flow rate of 3 sccm are 1.698 and 1.16×10⁻⁴, respectively. The secondary emission coefficient at a E/p of 57.8 V/(cm Torr) for MgO films deposited at a O₂ flow rate of 3 sccm is 0.16, which is higher than that of MgO films deposited by e-beam evaporation.     

利用等离子体辅助脉冲磁控溅射实现 多晶硅薄膜的低温沉积

本文报道了利用电感耦合等离子体辅助中频直流脉冲磁控溅射在温度300 ℃ 以下沉积氢化多晶硅薄膜的制备方法. 利用拉曼散射、X射线衍射、透射电子衍射和傅里叶红外光谱对多晶硅薄膜进行了表征. 详细研究了氢气在沉积过程中所起的作用, 并结合Langmuir探针和发射光谱等等离子体诊断方法, 对辅助等离子体源在多晶硅薄膜制备过程中所起到的作用进行了讨论.     

The structure and photocatalytic activity of TiO2 thin films deposited by dc magnetron sputtering

This paper seeks to determine the optimal settings for the deposition parameters, for TiO₂ thin film, prepared on non-alkali glass substrates, by direct current (dc) sputtering, using a ceramic TiO₂ target in an argon gas environment. An orthogonal array, the signal-to-noise ratio and analysis of variance are used to analyze the effect of the deposition parameters. Using the Taguchi method for design of a robust experiment, the interactions between factors are also investigated. The main deposition parameters, such as dc power (W), sputtering pressure (Pa), substrate temperature (°C) and deposition time (min), were optimized, with reference to the structure and photocatalytic characteristics of TiO₂. The results of this study show that substrate temperature and deposition time have the most significant effect on photocatalytic performance. For the optimal combination of deposition parameters, the (1 1 0) and (2 0 0) peaks of the rutile structure and the (2 0 0) peak of the anatase structure were observed, at 2θ ∼ 27.4°, 39.2° and 48°, respectively. The experimental results illustrate that the Taguchi method allowed a suitable solution to the problem, with the minimum number of trials, compared to a full factorial design. The adhesion of the coatings was also measured and evaluated, via a scratch test. Superior wear behavior was observed, for the TiO₂ film, because of the increased strength of the interface of micro-blasted tools.