AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers

In this paper, a new gate-recessed AlGaN/GaN-based high electron mobility transistor (HEMT) on SiC substrate is proposed and its DC as well as microwave characteristics are discussed for Si₃N₄ and SiO₂ passivation layers using technology computer aided design (TCAD). The two-dimensional electron gas (2DEG) transport properties are discussed by solving Schr?dinger and Poisson equations self-consistently resulting in various subbands having electron eigenvalues. From DC characteristics, the saturation drain currents are measured to be 600?mA/mm and 550?mA/mm for Si₃N₄ and SiO₂ passivation layers respectively. Apart from DC, small-signal AC analysis has been done using two-port network for various microwave parameters. The extrinsic transconductance parameters are measured to be 131.7?mS/mm at a gate voltage of V _gs?= ?0.35?V and 114.6?mS/mm at a gate voltage of V _gs?= ?0.4?V for Si₃N₄ and SiO₂ passivation layers respectively. The current gain cut-off frequencies (f _t) are measured to be 27.1?GHz and 23.97?GHz in unit-gain-point method at a gate voltage of ?0.4?V for Si₃N₄ and SiO₂ passivation layers respectively. Similarly, the power gain cut-off frequencies (f _max) are measured to be 41?GHz and 38.5?GHz in unit-gain-point method at a gate voltage of ?0.1?V for Si₃N₄ and SiO₂ passivation layers respectively. Furthermore, the maximum frequency of oscillation or unit power gain (MUG = 1) cut-off frequencies for Si₃N₄ and SiO₂ passivation layers are measured to be 32?GHz and 28?GHz respectively from MUG curves and the unit current gain, ?O?h ₂₁??O?=?1 cut-off frequencies are measured to be 140?GHz and 75?GHz for Si₃N₄ and SiO₂ passivation layers respectively from the abs ?O?h ₂₁??O curves. HEMT with Si₃N₄ passivation layer gives better results than HEMT with SiO₂ passivation layer.     

An intermediate monoclinic phase and electromechanical interactions in xPbTiO3-(1−x)Pb(Zn1/3Nb2/3)O3 crystals

The elastic matching of phases in the vicinity of the morphotropic phase boundary in xPbTiO₃-(1?x)Pb(Zn_1/3Nb_2/3)O₃ crystals is investigated in an external electric field with strength E ‖ [001]. The field dependences of the unit cell parameters of the monoclinic phase are determined experimentally in the range 0≤E≤2 MV/m. The results obtained are used in analyzing specific features in the electromechanical properties of xPbTiO₃-(1?x)Pb(Zn_1/3Nb_2/3)O₃ crystals (0.08?x?0.09), in which the monoclinic phase is intermediate between the rhombohedral and tetragonal phases and can coexist with these phases. A correlation between the optimum volume concentrations of domains or twins in different two-phases states is revealed and interpreted for the first time.     

First principles calculations of Sr-based fluoroperovskite compounds under applied pressure

The structural, electronic and thermoelectric properties of SrXF₃ (X?=?Li, Na, K, Rb) compounds are performed using first principle calculations. The mBJ-GGA method has been considered to obtain accurate band gaps. The present compounds are found to be thermodynamically stable under 0?GPa and 10?GPa. This stability has been determined using the standard enthalypy of formation. The band structures of the compounds display direct band-gap (Γ-Γ). The band gap has slightly increased for almost studied compounds under 10?GPa. The Boltzmann transport calculations are used to calculate and explain the thermoelectric properties as a function of temperature within the range 20–1500?K. The majority charge carriers of SrXF₃ compounds are holes rather than electrons. Under 10 GP pressure the SrLiF₃ compound is shifted from n-type to p-type doping, whereas SrKF₃ and SrRbF₃ are shifted from p-type to n-type. SrNaF₃ has p-type doping character under 0?GPa and 10?GPa. The Seebeck coeffiecient is found to decrease, whereas σ/τ and S² σ/τ increase for higher temperature. According to the figure of merit and the high S² σ/τ values for SrXF₃, promising thermoelectric applications are expected for the present compounds.     

Luminescent properties of Sr2.5−3x/2Ba0.5SmxAlO4F oxyfluorides

Effective orange Sm³⁺-doped Sr_2.5Ba_0.5AlO₄F phosphors excited at 254 and 408 nm excitation were prepared by the solid-state method. The excitation and emission spectra of Sr_2.5?3x/2Ba_0.5Sm_xAlO₄F and Sr_2.5?3x/2Ba_0.5Sm_xAlO_4?αF_1?δ (x=0.001～0.1) based on photoluminescence spectroscopy are investigated. The defects in anion-deficient Sr_2.5?3x/2Ba_0.5Sm_xAlO_4?αF_1?δ (x=0.001, 0.01) are monitored by broad-band photoluminescence emission centered near 480 nm along with the orange emission transitions of Sm³⁺. CIE values and relative luminescent intensities of Sr_2.5?3x/2Ba_0.5Sm_xAlO₄F and Sr_2.5?3x/2Ba_0.5Sm_xAlO_4?αF_1?δ by changing the Sm³⁺ content (x=0.001～0.1) are discussed.     

Photoelectron spectra and sum rule consideration: Effect of chlorine substitution on ionization energies for chloroethanes,chloroacetaldehydes and chloroacetyl chlorides

He(I) photoelectron spectra are reported for various series of chlorine-substituted compounds: (a) CH₃CH_3?mCl_m, (b) CH_3?mCl_mCCl₃, (c) CH_3?mCl_mCHO and (d) CH_3?mCl_mCOCl, where m = 1, 2 and 3. In each series it is shown that the total sum of vertical ionization energies over all p-type localized molecular orbitals (LO's) has an excellent linear relationship to the number of substituted chlorine atoms. The differences in the total orbital energy sum by successive chlorine substitutions are found to be 26.7 eV for series a and b and 27.2 eV for series c and d, yielding the corresponding experimental σ_CCl, energies useful for sum rule considerations. The photoelectron spectra of the chloro compounds studied are interpreted with the help of the sum rule as well as CNDO/2 calculations. Orbital correlation diagrams have been constructed for these compounds.     

Heat capacity of the 0.7PbNi1/3Nb2/3O3-0.3PbTiO3 ferroelectric ceramics

The temperature dependence of the heat capacity of the 0.7PbNi_1/3Nb_2/3O₃-0.3PbTiO₃ compound has been studied in the temperature range 120?C800 K. The temperature dependence of the heat capacity C _p has two diffuse anomalies in the temperature ranges 250?C450 K and 450?C650 K and a ?? anomaly at temperatures T ?? 225 K. The results are discussed with inclusion of the dielectric and structural data.     

Description of ferroelectric phase transitions in solid solutions of relaxors in the framework of the random-field theory

A model based on the random-field theory is proposed for calculating the properties of solid solutions of ferroelectric relaxors. The electric dipoles randomly distributed in the system are treated as sources of random fields. The random field distribution function is calculated taking into account the contribution of nonlinear and correlation effects and the differences in the dipole orientations for different solid solution components. The dependence of the phase transition temperature T _c on the concentration of solid solution components is analyzed. Numerical calculations are performed for the lead scandoniobate and lead scandotantalate solid solutions (PbSc_1/2Nb_1/2O₃)_1?x (PbSc_1/2Ta_1/2O₃)_x with different degrees of ordering and the lead magnoniobate and lead titanate solid solution (PbMg_1/3Nb_2/3O₃)_1?x (PbTiO₃)_x. It is shown that the higher transition temperature for more disordered solid solutions of the composition (PbSc_1/2Nb_1/2O₃)_1?x (PbSc_1/2Ta_1/2O₃)_x in the range 0≤x<0.5 is associated with the larger nonlinearity coefficient for PbSc_1/2Nb_1/2O₃ as compared to that for PbSc_1/2Ta_1/2O₃. The theory provides a means for calculating the region of the coexistence of the phases with different symmetry groups in the temperature-composition phase diagram of the (PbMg_1/3Nb_2/3O₃)_1?x (PbTiO₃) solid solution. Numerical calculations with the use of the fitting parameters obtained from the known transition temperatures T _c for the solid solution components adequately describe the experimental phase diagrams for the aforementioned solid solutions of ferroelectric relaxors.     

Anomalous proximity effect in superconducting oxide structures with an antiferromagnetic layer

The electrophysical parameters of superconductor/antiferromagnetic insulator structures based on the Nb/Au/Ca_1?x Sr _x CuO₂/YBa₂Cu₃O_7?δ hybrid heterostructure have been examined. YBa₂Cu₃O_7?δ and Ca_1?x Sr _x SuO₂ epitaxial films are grown by the laser ablation method on NdGaO₃ single crystal substrates, the thickness of the Ca_1?x Sr _x CuO₂ layer varies from 20 to 50 nm, and x = 0.15 and 0.5. The superconducting pair potential in the interface between the YBa₂Cu₃O_7?δ superconductor and Ca_1?x Sr _x CuO₂ antiferromagnet is found to penetrate into the antiferromagnet at distances much larger than the coherence length calculated for the ferromagnetic layer. The critical current of the superconducting transition manufactured at such an interface is highly sensitive to the magnetic field.     

Features of the absorption spectra of thin films of M 2Ag1 − x CuxI3 solid solutions (M = Rb, Cs)

The absorption spectra of thin films of (MI)_{1 ? y} (Ag_{1 ? x} Cu_xI)_y solid solutions (M = Rb, Cs) with the initial molar concentration y = 0.33 have been investigated. It is established that, at low concentrations x, a local exciton band due to Cu⁺ ions is split off from the main long-wavelength exciton bands. In Rb₂Ag_{1 ? x} Cu_xI₃ solutions, the concentration shift of exciton bands indicates the formation of a persistent-type exciton spectrum. However, in Rb₂Ag_{1 ? x} Cu_xI₃ with x ≥ 0.5 and in Cs₂Ag_{1 ? x} Cu_xI₃ with x > 0.2, exciton spectra of amalgamation type are observed, which are related to the formation of more stable M ₃Ag_{2 ? 2x} Cu_2x I₅ solid solutions. The formation of these solutions leads to broadening of the exciton bands and to the concentration transition from persistent-to amalgamation-type exciton spectra.     

Multicomponent dense electron gas as a model of Si MOSFET

We solve a 2D model of N-component dense electron gas in the limit N→∞ and in the range of the Coulomb interaction parameter N ^?3/2?r _s ?1. The quasiparticle interaction on the Fermi circle vanishes as ?²/Nm. The ground-state energy and the effective mass are found as series in powers of r _s ^2/3 . In the quantum Hall state on the lowest Landau level at integer filling 1?ν<N, the charge-activation-energy gap and the exchange constant are Δ=log(r _s N^3/2)?ω_H/ν and J=0.66?ω_H/ν.     

Photoluminescence in YbGa2Se4 and YbGa2Se4:Nd3+ single crystals

The excitation and photoluminescence spectra of YbGa₂Se₄ and YbGa₂Se₄:Nd³⁺ single crystals recorded at different temperatures and neodymium concentrations have been investigated. The photoluminescence spectrum exhibits intracenter luminescence lines of the Nd³⁺ ion in wavelength ranges of 0.804?C0.84, 0.88?C0.92, 0.96?C0.996, and 1.06?C1.12 ??m against a broadband emission background. These ranges are related, respectively, to the ⁴ F _5/2-⁴ I _9/2, ⁴ F _3/2-⁴ I _9/2, ⁴ F _5/2-⁴ I _11/2, and ⁴ F _3/2-⁴ I _11/2 transitions.     

High temperature thermoelectric properties of Ca1−xBixMn1−yV yO3−δ (0≤x=y≤0.08)

CaMnO_3?δ with complex additives Bi₂O₃–V ₂O₅ were prepared by the solid-state reaction. The crystal structures of the Ca_1?xBi_xMn_1?yV _yO_3?δ (0≤x=y≤0.08) solid solutions were determined by means of the powder X-ray diffraction (XRD) using Rietan 2000 program and the high temperature thermoelectric properties were also investigated. Perovskite-type Ca_1?xBi_xMn_1?yV _yO_3?δ solid solutions are n-type semiconductors. The lattice parameters increase with increasing dopant level. The high temperature thermoelectric properties are improved due to Bi₂O₃–V ₂O₅ simultaneous doping. A maximum ZT value reaches to 0.21 for electron-doped Ca_0.96Bi_0.04Mn_0.96V _0.04O_3?δ at 1050 K, which is about twice as high as that of CaMnO_3?δ. The thermal shock resistance at temperatures between 20 and 450 ^°C is also highly improved.     

Ferroelastic transition and the relaxor state in SrTiO3-PbMg1/3Nb2/3O3

Dielectric and acoustic properties of the (1 ? x)SrTiO₃?xPbMg_1/3Nb_2/3O₃ solid solutions (0 ? x ? 1) have been studied at temperatures ranging from 4.2 to 350 K. It has been found that the improper ferroelastic transition exists up to a concentration x = 0.4 and that the phase transition temperature grows with x increasing from 0 to 0.4. As the concentration of the second component is further increased, the transition becomes suppressed by the relaxor phase forming at x _c ≈ 0.22. The results obtained are discussed in terms of the current concepts of relaxor ferroelectrics.     

Non-stoichiometry in uranium sesquinitride

A statistical model is proposed for analyzing thermodynamic properties of non-stoichiometric uranium sesquinitride. It consists of the combination of the site exclusion mechanism and cluster formation reactions. The model was applied to the three ionic possibilities of U_3/2⁴⁺U_1/2⁶⁺N₃^3?, U⁴⁺U⁵⁺N₃^3? and U₂³⁺N₃^2?. By fitting the theoretical equations to the experimentally observed data, it was found that the set U_3/2⁴⁺U_1/2⁶⁺U₃^3?, β=2, 1:2 cluster gave the most satisfactory results. From β=2, the upper limit of non-stoichiometry is expected to be N/U=1·75. The result that the 1:2 clusters predominantly exist in U₂N_3+x suggests the existence of UN_1·75 phase. The energy required for nitrogen atom for occupying the lattice site of the crystal, E, was calculated to be ?120·5 kcal/mole, and the interaction energy to form clusters, E_c, was ?11·07 kcal/mole.     

Effect of different doped elements on visible light absorption and ultraviolet light emission on Er3+:Y3Al5O12

In this progress report, seven kinds of novel carefully designed and fabricated up-conversion luminescence agents, Er³⁺:Y₃Al₅O₁₂, Er³⁺:Yb_nY_3?nAl₅O₁₂, Er³⁺:Y₃B_aAl_5?aO₁₂, Er³⁺:Y₃Ga_bAl_5?bO₁₂, Er³⁺:Y₃Al₅N_xO_12?x, Er³⁺:Y₃Al₅F_yO_12?y and Er³⁺:Yb_nY_3?nB_aGa_bAl_5?a?bN_xF_yO_12?x?y, are successfully synthesized using sol–gel methods. After that, their corresponding photocatalysts, Er³⁺:Y₃Al₅O₁₂/TiO₂, Er³⁺:Yb_nY_3?nAl₅O₁₂/TiO₂, Er³⁺:Y₃B_aAl_5?aO₁₂/TiO₂, Er³⁺:Y₃Ga_bAl_5?bO₁₂/TiO₂, Er³⁺:Y₃Al₅N_xO_12?x/TiO₂, Er³⁺:Y₃Al₅F_yO_12?y/TiO₂ and Er³⁺:Yb_nY_3?nB_aGa_bAl_5?a?bN_xF_yO_12?x?y/TiO₂, are also prepared by sol–gel coating process. The obtained up-conversion luminescence agents and photocatalysts were characterized by using XRD, XPS, SEM, UV–vis and fluorescence spectrophotometer. Synchronously, several kinds of organic dyes are used to test their photocatalytic degradation using prepared photocatalysts. It indicates that the up-conversion luminescence ability of Er³⁺:Y₃Al₅O₁₂ can be improved obviously through doping of some elements. And then, the photocatalytic activity of TiO₂ is markedly enhanced by modified up-conversion luminescence agents which can transform much visible light into ultraviolet light.     

X-ray magnetic circular dichroism at IrL2,3 edges in Fe100−x Ir x and Co100−x Ir x alloys: Magnetism of 5d electronic states

The formation of induced 5d magnetic moment on Ir in Fe_100−x Ir _x (x=3, 10 and 17) and Co_100−x Ir _x (x=5, 17, 25 and 32) alloys has been investigated by X-ray magnetic circular dichroism (XMCD) at Ir L_2,3 absorption edges. Sum rule analysis of the XMCD data show that the orbital moment of Ir is in the range of −0.071(2)μB to −0.030(1)μB in Fe-Ir alloys and −0.067(2)μB to 0.024(1)μB in Co-Ir alloys. We find that the total moment of Ir in Fe-Ir alloys is approximately 1/5 of the total 3d moment on Fe at all the three compositions. In contrast, the total moment on Ir in Co-Ir alloys varies between 1/6 to 1/16 of the 3d moment on cobalt. The observed trends of Ir moments and the role of interatomic exchange interactions in 5d moment formation are discussed.     

Atomic beam magnetic resonance investigations in the3 F 2 Ground State of177Hf,179Hf and180Hf

The 5d ²6s ^{2 3} F ₂ ground state of¹⁷⁷Hf,¹⁷⁹Hf and¹⁸⁰Hf has been studied using the atomic beam magnetic resonance method. The atomic beam was produced by an universal evaporation technique described in a previous paper. The results are¹⁸⁰Hfg _j (³ F ₂)=0.695812 (10)¹⁷⁷Hf Δv(³ F ₂;F=11/2?F=9/2)=991.7917 (10) MHz Δv(³ F ₂;F=9/2?F=7/2)=477.0081 (10) MHz Δv(³ F ₂;F=7/2?F=5/2)=162.8890 (10) MHz¹⁷⁹HfΔv(³ F ₂;F=13/2?F=11/2)=82.1320 (10) MHz Δv(³ F ₂;F=11/2?F=9/2)=392.8498 (10) MHz. The magnetic dipole and electric quadrupole moments of the¹⁷⁷Hf and¹⁷⁹Hf nuclear ground states as calculated from these hyperfine structure measurements are the following: μ(177)=0.75(8)μ _k , Q(177)=4.34 (65) barns μ(179)=?0.61 (6)μ _k , Q(179)=4.90 (75) barns.     

Linear optical properties of γ-modification of bismuth borate BiB3O6

The refractive index dispersion of the ??-BiB₃O₆ crystal in the wavelength range 0.43?C0.81 ??m has been measured. It has been shown that the principal refractive indices n ₁, n ₂, and n ₃ are on average higher than those of ??-BiB₃O₆, but are slightly lower than those of ??-BiB₃O₆. The temperature dependences of the rotation angle ??(T) of the optical indicatrix and birefringence ??n ₂(T) = (n ₁ ? n ₃)(T) have been studied in the temperature range 100?C963 K. It has been shown that the ??-BiB₃O₆ crystal is stable in this temperature region.     

Piezoelectric properties of new ternary Bi1/2(Na, Li)1/2TiO3–(Bi1/2K1/2)TiO3–Ba0.85Ca0.15Ti0.90Zr0.10O3 ceramics

0.852[Bi_1/2(Na_1?x Li _x )_1/2]TiO₃?C0.110(Bi_1/2K_1/2)TiO₃?C0.038Ba_0.85Ca_0.15Ti_0.90Zr_0.10O₃ (BNLT?CBKT?CBCTZ-x) new ternary piezoelectric ceramics were fabricated by the conventional solid-state method, and their piezoelectric properties as a function of the Li content were mainly investigated. A?stable solid solution with a single perovskite structure has been formed, and the depolarization temperature (T _d) of these ceramics was identified by using the temperature dependence of the dielectric loss. The T _d value of these ceramics gradually decreases, while the T _m value increases with increasing the Li content. The dielectric constant increases and the dielectric loss decreases with increasing the Li content, and an enhanced piezoelectric behavior of d ₃₃??223 pC/N and k _p??35.2?% has been demonstrated in these ceramics with x=0.06.     

Electronic structure of dichalcogenide and dipnictide anions

The Self-Consistent-Field Xα Scattered Wave Cluster MO method is used to calculate molecular orbital energy level diagrams for O₂, O₂^?, O₂^2?, S₂, S₂^2?, Se₂^2?, P₂^4?, As₂^4? and AsS^3?. Calculated energies are in good agreement with those measured by photoemission spectroscopy for O₂, S₂, S₂^2? in ZrS₃, Se₂^2? in ZrSe₃ and P₂^4? in TiP₂. For O₂^? the calculated energy of the π_u → π_g transition agrees fairly well with that of the UV absorption observed in LiO₂. The predicted photoemission spectrum of O₂^2? is consistent with a preliminary study on BaO₂. Calculated valence region widths in peroxides are found to be significantly greater than the calculated oxygen atomic valence _s-p separation while valence widths for the other anions closely match atomic valence s-p splittings. This effect arises from the instability of the peroxide antibonding orbitals which correlates with the absence of dsun peroxides and Superoxides. Calculations on a Cin2v geometry FeO₆su9? cluster show that the difference in energy of O2p nonbonding and Fe3d crystal field type orbitals drops sharply as an O-O edge is contracted, providing a mechanism for Fe³⁺ → Fe²⁺ reduction at high pressure.