1MV阳极杆箍缩二极管数值模型实验研究

阳极杆箍缩二极管（RPD）具有小焦斑、高亮度的特点,是闪光X光机领域的研究热点。基于Marx发生器和脉冲形成线技术路线产生1 MV高电压脉冲驱动RPD,开展了不同结构参数二极管实验研究。基于RPD物理过程的数值模型,分析了结构参数对箍缩物理过程的影响。研究表明在1 MV电压下,RPD阴极等离子体平均扩散速度、阳极等离子体平均扩散速度分别为2,0.6 cm/μs时,该模型可以较好地描述实验结果。在阳极杆直径一定的情况下,二极管数值模型表明减小阴极孔径可以使二极管更快进入强箍缩状态,但过小的阴极孔径会导致二极管间隙过早闭合。     

Relativistic electron beam generation in a plasma-filled diode withfoilless injection into a dense plasma

In the experiments an relativistic electron beam (REB)-plasma interaction, the foilless injection of REB from a magnetized diode is of special interest due to the low spread angle of the beam and high repetition rate of the shots. In the experiments presented, the problem of diode shortening in the presence of a dense plasma from the interaction chamber has been solved using a special drift pipe as an anode of the foilless diode. The electron beam (U_d~0.7 MeV, t _b~100-200 ns) produced by an axially symmetric magnetically insulated diode has been injected into a magnetized hydrogen plasma column with density ranging from 1·10¹⁵-3·10 ¹⁶ cm^-3. It has been found that the anode pipe substantially reduces the plasma flow into the diode gap, but does not stop it completely, thus the REB generation in a plasma-filled diode has taken place. In some regimes of the beam generation it becomes possible to increase significantly the injected current and total energy deposition of the beam in comparison with the case of a vacuum magnetized diode of the same geometry. The experiments have shown effective dense plasma heating under the foilless injection     

Operational characteristics of a plasma cathode with a grid stabilization in a two-stage ion source

The discharge characteristics and the parameters of the cathode plasma in a two-stage ion source with a grid plasma cathode and a magnetic trap in the anode region are investigated. It is shown that an increase in the gas pressure and the accompanying increase in the reverse ion current in the bipolar diode between the cathode and anode plasmas lead to an increase in the cathode plasma potential and a transition of the cathode into the regime of electron emission from the open plasma boundary. The dependence of the ion current extracted from the anode plasma on the area of the exit aperture of the hollow cathode and the mesh size of the grid plasma cathode is explained. The conditions at which the ion emission current from the anode plasma is maximum are determined. The potential difference at the bipolar diode is measured by using the probe method. It is shown that, when the gas pressures reaches a critical value determined by the mesh size of the grid plasma cathode, the discharge passes into a contracted operating mode, in which the ion current extracted from the anode plasma decreases severalfold.     

Injection-locking technique for heterodyne optical phase locking of a diode laser

A novel technique is demonstrated for heterodyne optical phase locking of a diode laser to a single-frequency source by injection seeding. By modulation of the drive current of the diode laser at as much as several gigahertz, FM sidebands are imposed upon the output. We demonstrate that it is possible to phase lock either sideband to an injected beam. The carrier of the diode laser output is therefore locked in phase with the injected light but with a frequency difference given by the modulation of the drive current. The phase fluctuations between the lasers are analyzed, and the variance is found to be (4.4( degrees ))(2) , corresponding to 99.4% of the diode carrier light locked to the injected beam.     

Computer Simulation of High-Power Ion Beam Generation Using the Plasma Erosion Opening Switch and Microsecond Store Systems

This paper deals with computer simulation of plasma erosion opening switch (PEOS) operation in the context of short-pulse high-power ion beam (HPIB) generation in microsecond store systems. The scaling of PEOS parameters and ion diode characteristics with various operating conditions was determined. The simulations showed the best PEOS characteristics for a hydrogen plasma (i.e., the lowest mass) with a high flow velocity and low density, although for some applications a plasma with A/Z > 1 may be preferable. It was shown that the efficiency of HPIB generation in the diode depends on its location relative to the PEOS, the time delay of anode plasma formation, the use of a spiral electrode in the PEOS region, and the use of an arrangement involving an ion return current bypass through the PEOS region. The optimization of the PEOS and ion diode with coaxial configurations and 100 kJ stored in the 600-kV Marx yielded a 16-percent overall efficiency HPIB generation in the diode, with a diode voltage and power of 4.2 MV and 0.42 TW, respectively.     

重复频率脉冲强X射线源

 介绍了一台重复率1～2Hz、采用等离子体断路开关和电感储能技术的脉冲强X射线源。距辐射靶0.5m处的峰值剂量率为0.25MGy/s,1m处的平均剂量率为0.15kGy/h,脉宽(FWHM)约为100ns。给出了装置构成、原理及初步调试结果。     

1.2MV“天蝎”X光机杆箍缩二极管性能模拟

为了深入研究杆箍缩二极管的物理性能,采用蒙特卡罗方法对中国工程物理研究院流体物理研究所1.2 MV"天蝎"X光机的杆箍缩二极管进行模拟研究,包括PIC模拟和光电子输运模拟。着重分析了杆箍缩二极管结构参数与阻抗及出光剂量等的关系,发现阻抗和出光剂量与阴阳极半径比正相关,而出光剂量和杆探出长度正相关。提出一种阻止阴极盘后表面发射电子的设想,有望显著提高X射线辐射剂量。     

Method for modifying the structure and elemental composition of the solid surface during a high-voltage vacuum discharge

A new method for modifying the surface of a solid, which makes it possible to change effectively the structure and elemental composition of the surface with a high precision, is developed and tested experimentally. The method is based on the action of the plasma of a pulsed high-voltage vacuum discharge, the ion beam from the plasma, and the electron beam on a solid target. The emission and plasma parameters are observed in a pulsed electric field produced in the diode system to which a pulsed voltage with an amplitude of ～10³–10⁵ V and a duration from 10^?9 to 10^?5 s is applied.     

强光一号Z箍缩产生keV级特征X射线初步研究

 分析了高功率Z箍缩产生keV级特征X射线辐射的物理机理和用于计算等离子体K层辐射二能级模型，给出了采用二能级模型进行数值模拟的结果，描述了强光一号装置驱动Z箍缩负载的脉冲功率源特性参数，介绍了所设计研制的双层喷Ne气和双层铝丝阵两类Z箍缩负载的结构与参数，并对下一步拟开展的实验研究工作进行了说明。利用特制真空X射线二极管测量了强光一号双层喷氖气Z箍缩实验产生的X射线波形，实验结果表明，当气室内初始气压在0.8 MPa时，喷Ne气Z箍缩可获得较好的keV量级的X射线辐射。     

Otpically illuminated dielectric interfaces as high-speed far-infrared modulators

A new device for the gigahertz modulation of far-infrared radiation is analytically and numerically analyzed. It consists of a thin layer of a high-mobility, direct-bandgap semiconductor, such as GaAs, in which a high-density electron-hole plasma is rapidly created and destroyed, thereby rapidly changing the free-carrier reflectivity of the active layer. Illumination by a high-power, near-infrared laser diode array generates the plasma through intrinsic photoconduction. It is shown that this device acis primarily as an amplitude modulator, and that its efficiency increases sharply with increasing far-IR frequency, in contrast to a Schottky diode, which acts primarily as a phase modulator, and whose efficiency falls off sharply with far-IR frequency. The breakeven frequency lies at about 1.5 THz, depending slightly on the assumed device parameters. The relative advantage of the new device increases rapidly with increasing far-infrared frequency. At an operating frequency of 2.5 THz (119 m), for example, a 1 GHz modulation bandwidth may be achieved with a single-sideband conversion loss of only-21 db, versus a Schottky's loss of-39 db, assuming a laser diode power of 1 W, which is readily available from recently developed laser diode arrays.     

An efficient Schottky-varactor frequency multiplier at millimeter waves. Part I: Doubler

The efficiency of millimeter wave doublers with a wide tunable bandwidth was studied. The efficiency depends on the varactor parameters and the embedding impedances seen by the diode at fundamental and harmonic frequencies. Millimeter wave doublers were simulated with a nonlinear analysis program to find optimum embedding impedances for a given diode. Also the sensitivity of the efficiency to various diode and circuit parameters was evaluated. A scaled model was constructed in order to experimentally optimize the impedances. For experimental verification a doubler from 40–58 GHz to 80–116 GHz was constructed. The highest efficiency measured was 45% at 94 GHz with 5 mW input power. The highest efficiency obtained with 20 mW input power was 38%.     

Hard X-ray source based on low-impedance rod pinch diode

The results of experiments on the formation of a low-impedance diode in a rod pinch diode configuration preliminarily short-circuited by a radial foil have been described. The low-impedance diode is formed as a result of detachment of the foil (accelerated by the current of a high-current generator) from the anode rod. It has been shown that, by changing the shape of the anode tip, the thickness of the aluminum foil, and its position relative to the anode tip as by reconnecting the current via the foil and rod plasma, it is possible to obtain from one to several sequential hard X-ray pulses.     

短脉冲高剂量率γ射线源技术研究

 介绍了“强光一号”加速器产生宽度约20 ns的高剂量率脉冲γ射线的工作过程;分析了短脉冲γ射线源二极管的管绝缘体和真空磁绝缘传输线的结构与绝缘性能;说明了等离子体断路开关的工作特性;阐述了二极管工作阻抗和阴阳极的设计原则与设计参数。给出了不同短脉冲γ射线源的实验结果,得到了3种辐射参数：脉冲宽度约20 ns,辐射面积为2,30和100 cm²时,相应的辐射剂量率为10¹¹,0.7×10¹¹和10¹⁰ Gy/s。     

太赫兹GaAs肖特基混频二极管高频特性分析

在太赫兹波段,存在几种新的高频效应会限制混频二极管的高频特性.应用热电子发射理论和隧道理论,研究了外延层肖特基二极管的高频特性,并以截止频率为品质因数对二极管进行优化设计.研究表明,当二极管工作频率大于等离子频率时,二极管相当于一个电容,失去了混频性能;提高基底掺杂浓度可以减小基底等离子共振效应;外延层等离子频率非常重要并且在研究外延层等离子共振效应时必须考虑传输时间效应;减小阳极直径、减小外延层厚度、提高外延层掺杂浓度可以提高二极管的工作频率.这对太赫兹波段室温混频器件的研制具有重要的参考价值.     

充空气的同轴慢波结构高功率微波器件粒子模拟

 粒子模拟了电子碰撞空气产生的等离子体对同轴慢波结构高功率微波器件的影响，并且在充空气条件下对器件结构参数进行了进一步优化。模拟表明，气压越高，产生的二极管电流越大，二极管电压越低，频率越低。等离子体离子对电子束的空间电荷中和及等离子体电子对微波的能量吸收共同影响输出微波功率的大小。在一定的气压范围内，提高气压能够提高输出功率，此时等离子体离子对电子束的空间电荷中和起主导作用。气压高于一定值时，所产生的等离子体电子强烈吸收微波，输出功率迅速下降，甚至引起脉冲缩短。此外，由于等离子体的存在，器件最佳相互作用区长度以及最优端面反射系数均有可能发生改变。最后还对慢波结构周期数以及漂移段长度等进行了研究，优化的器件内、外导体周期数为11和8.5，慢波结构前端以及内外慢波结构末端分别接4, 17和2 mm的漂移段，在气压4 Pa下获得了1.64 GW的输出功率，效率39%。     

Control of the clustering process in molecular beams using IR lasers

The prebreakdown stage of a gas discharge in a diode with strongly overloaded cathode is studied by laser methods (by simultaneous use of multiframe interferometry and shadow and schlieren photographing) at atmospheric pressure. The spatial resolution of the methods is about 20 μm. A probing pulse of a laser (LS-2151 Nd: YAG laser with a half amplitude duration of 70 ps and a pulse energy of up to 40 mJ) is synchronized with a voltage pulse with accuracy of about 1 ns. High field strength at the cathode is achieved due to the use of thin individual metal tips on the electrodes. It is shown that the initial stage of breakdown of a discharge gap is accompanied by the emergence of a dense plasma cloud at the end of a tip with electron density of about 5 × 10¹⁹ cm^–3 with a size of tens of microns, as well as by a sharp increase in the total current through the diode. After the emergence of a dense plasma cloud at the end of a cathode tip, a similar cloud is formed on the surface of the anode; sometime later, these clouds join together and form a tubular current channel. The dynamics of the breakdown, as well as the parameters of the plasma are studied by the abovementioned techniques in three independent optical channels.     

预充等离子体密度对杆箍缩二极管特性的影响

在杆箍缩二极管工作前预先填充一定密度的等离子体,可以改善二极管特性,从而提高二极管出射X射线的剂量率。建立了预充等离子体的杆箍缩二极管的粒子模拟模型,通过收集轰击到阳极上的电子,诊断其轴向分布,可以给出不同时刻的束流箍缩特性。利用"剑光一号"加速器低阻抗状态(1 MV/9Ω/40ns)开展了预充等离子体的杆箍缩二极管实验研究。预充适当密度的等离子体后,二极管阻抗降低到10Ω,X射线辐射剂量从0.76mGy提高到3.19mGy,侧向焦斑从9mm降到4mm。模拟结果和实验基本符合。     

真空二极管辐射微波的机理分析

在研究真空开关的过程中,发现真空二极管能辐射出宽带微波.这种器件只由带触发装置的阴极和平板阳极组成,不存在金属波纹慢波结构,所以真空二极管的辐射机理与等离子体填充微波器件不同,不能直接套用等离子体填充微波器件的相关理论.本文描述了真空二极管产生辐射的物理过程,建立了真空二极管辐射的数学模型,通过求解波动方程得到产生辐射的色散关系,并绘制出了色散曲线.将理论分析得到的色散曲线与已经测得的微波辐射进行比较,两者能很好地符合.理论分析和实验结果表明,电子束和磁化等离子体的相互作用是真空二极管产生微波辐射的原因.     

向内发射同轴型二极管电流电压关系二维修正

 给出了对同轴型强流电子束二极管的电流电压关系进行的部分理论推导与介绍,同时利用PIC数值模拟以及实验研究得到的二维效应修正关系曲线。在研究中首先给出了对向内发射同轴型二极管在不同电压等级下的电流电压关系,然后用PIC数值模拟方法进行验证。对数值模拟的结果也给出了理论推导公式在不同状态下的二维效应修正因子与电子束流运动的特点。在研究中得到的电流电压关系理论公式基本上反映了不同条件下同轴型二极管的束流特性,所以此研究结果可以直接应用于包含同轴型二极管结构的脉冲功率器件的设计与实验结果的分析中,为实验中相关问题的解决提供设计的依据与理论分析基础。