Effects of annealing on gap states in amorphous Si films

Annealing behaviors of the activation energy for electrical conduction, the optical gap, and the spin density in amorphous Si are investigated. It is found that the Fermi level shifts downwards with the decrease of the spin density, increasing the decay length of the wave function of localized state at the Fermi level. The downward shift of the Fermi level suggests that the localized states in the upper energy region in the gap are annealed out more easily than those in the lower one.     

Electronic structure of half-metallic ferromagnet Co<Subscript>2</Subscript>MnSi at high-pressure

In this study, first principles calculation results of the half-metallic ferromagnetic Heusler compound Co₂MnSi are presented. All calculations are based on the spin-polarized generalized gradient approximation (σ-GGA) of the density functional theory and ultrasoft pseudopotentials with plane wave basis. Electronic structure of related compound in cubic L2₁ structure is investigated up to 95 GPa uniform hydrostatic pressure. The half-metal to metal transition was observed around ~70 GPa together with downward shift of the conduction band minimum (CBM) and a linear increase of direct band gap of minority spins at Γ-point with increasing pressure. The electronic density of states of minority spins at Fermi level, which are mainly due to the cobalt atoms, become remarkable with increasing pressure resulting a sharp decrease in spin polarization ratio. It can be stated that the pressure affects minority spin states rather than that of majority spins and lead to a slight reconstruction of minority spin states which lie below the Fermi level. In particular, energy band gap of minority spin states in equilibrium structure is obviously not destroyed, but the Fermi level is shifted outside the gap.     

Electronic,magnetic and Fermi properties investigates on quaternary Heusler NiCoCrAl,NiCoCrGa and NiFeCrGa

Using the full-potential local-orbital minimum-basis method within the framework of density functional theory, we study the electronic, magnetic and Fermi properties of three quaternary Heusler compounds: NiCoCrAl, NiCoCrGa and NiFeCrGa. Results identify that these compounds are half-metallic ferromagnets with integer spin magnetic moment, and their spin moments follow the Slater–Pauling rule. Accordingly, the origin of gap and magnetic moment are also discussed. In addition, the Fermi surface is further plotted to explore the behavior of electronic states in the vicinity of Fermi level for these compounds. Finally, we argue the influence of tetragonal deformation on electronic and magnetic properties. Meanwhile, the possible L2₁ disorder is also discussed for NiCoCrAl and NiCoCrGa.     

Evolution of electronic structure in Eu1−xLaxFe2As2

We report an angle-resolved photoemission spectroscopy study of electronic structures of Eu_1−xLa_xFe₂As₂ single crystals, in which the spin density wave transition is suppressed with La doping. In the paramagnetic state, the Fermi surface maps are similar for all dopings, with chemical potential shifts corresponding to the extra electrons introduced by the La doping. In the spin density wave state, we identify electronic structure signatures that relate to the spin density wave transition. Bands around M show that the energy of the system is saved by the band shifts towards high energies, and the shifts decrease with increasing doping, in agreement with the weakened magnetic order.     

Electronic structure and magnetism of metastable bcc Co(001)

The electronic structure and magnetism of thin films of metastable bcc phase Co(001) consisting of one-, five- and nine-layers is determined by means of all-electron local spin density full potential linearized augmented plane wave (FLAPW) calculations at the lattice constant found for bcc Co stabilized on a GaAs substrate by Prinz. Band structure, surface states, density of states, charge and spin densities and contact hyperfine fields are presented. The center layer of the many-layer films yields a spin magnetic moment of 1.76μ_B which agrees well with results of bulk calculations for bcc Co. The surface layer has a moment (1.94μ_B) which is only 10% greater than the bulk value - in sharp contrast to the enhancement found for other transition metal surfaces [35% for Fe(001), 20% for Ni(001) and over 300% for Cr(001)]. Unlike these other transition metal surfaces, even the first layer below the surface layer in Co has the bulk magnetic moment - which indicates that the spin density, like the charge density, shows very short range screening of the surface-vacuum interface.     

Half-metallic silicon nanowires: first-principles calculations

From first-principles calculations, we predict that specific transition metal (TM) atom-adsorbed silicon nanowires have a half-metallic ground state. They are insulators for one spin direction, but show metallic properties for the opposite spin direction. At high coverage of TM atoms, ferromagnetic silicon nanowires become metallic for both spin directions with high magnetic moment and may have also significant spin polarization at the Fermi level. The spin-dependent electronic properties can be engineered by changing the type of adsorbed TM atoms, as well as the diameter of the nanowire. Present results are not only of scientific interest, but also can initiate new research on spintronic applications of silicon nanowires.     

(Mg,Fe)SiO_3钙钛矿在高压下光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势方法并结合局域密度近似(LDA),计算了(Mg_(0.875),Fe_(0.125))SiO_3钙钛矿在高压下的光吸收和折射率性质.结果表明:(1)计算得到的二价铁吸收带的波数位置以及其吸收带随压力增大出现的蓝移现象与实验观测结果基本一致.(2)压力是导致二价铁吸收带强度降低的一个重要因素,而二价铁自旋态的转变对其吸收带强度的降低没有贡献.因此,实验中观测到的二价铁吸收带强度的降低或许与其自旋态的转变无关.(3)在近红外和可见光区,折射率随着压力增大而降低,随波数增加而缓慢上升.     

二维应变作用下超导薄膜LiFeAs的磁性和电子性质

基于密度泛函理论的第一性原理计算,研究了二维应变作用下LiFeAs超导薄膜的磁性结构、电子能带和态密度变化,分析了应变对其超导电性的作用.结果显示,对体系施加1%—6%的二维平面张、压应变均不改变其基态条形反铁磁性结构,费米面附近的电子态密度主要来自于Fe-3d轨道电子以及少量的As-4p电子.研究发现,与无应变情形相比,当施加压应变时,体系中Fe离子的反平行的电子自旋局域磁矩减小,薄膜反铁磁性受到抑制,费米面上电子态密度增加,超导电性来自于以反铁磁超交换耦合作用为媒介的空穴型费米面和电子型费米面间嵌套的Cooper电子对.而在张应变作用时,局域反铁磁性增强,费米面上电子态密度减小,金属性减弱,特别是张应变时费米面上空穴型能带消失, Cooper电子对出现概率显著降低,将抑制超导相变.     

Quantum phase transition of cold atoms trapped in optical lattices

We review our recent theoretical advances in phase transition of cold atoms in optical lattices, such as triangular lattice, honeycomb lattice, and Kagomé lattice. By employing the new developed numerical methods called dynamical cluster approximation and cellular dynamical mean-field theory, the properties in different phases of cold atoms in optical lattices are studied, such as density of states, Fermi surface and double occupancy. On triangular lattice, a reentrant behavior of phase translation line between Fermi liquid state and pseudogap state is found due to the Kondo effect. We find the system undergoes a second order Mott transition from a metallic state into a Mott insulator state on honeycomb lattice and triangular Kagomé lattice. The stability of quantum spin Hall phase towards interaction on honeycomb lattice with spin-orbital coupling is systematically discussed. And we investigate the transition from quantum spin Hall insulator to normal insulator in Kagomé lattice which includes a nearest-neighbor intrinsic spin-orbit coupling and a trimerized Hamiltonian. In addition, we propose the experimental protocols to observe these phase transition of cold atoms in optical lattices.     

Magnetism, spin-orbit coupling, and superconducting pairing in UGe2

A consistent picture on the mean-field level of the magnetic properties and electronic structure of the superconducting itinerant ferromagnet UGe2 requires inclusion of correlation effects beyond the local density approximation (LDA). The " LDA+U" approach reproduces both the magnitude of the observed moment and the magnetocrystalline anisotropy. The largest Fermi surface sheet is composed primarily of spin majority states with orbital projection m(l) = 0, suggesting a much simpler picture of the pairing than is possible for general strong spin-orbit coupled materials. The quasi-two-dimensional geometry of the Fermi surface supports the likelihood of magnetically mediated p-wave triplet pairing.     

Fen/Crn超晶格磁性和电子结构的第一性原理研究

采用基于密度泛函原理的全势线性缀加平面波方法(FLAPW),计算了超晶格Fen/Crn(n=1,3,5)的电子结构和磁性,结果表明铁磁耦合状态是基态,铁层的磁矩由于铬层的加入而有一些变化,铁层的磁矩随着n的增大而逐渐增强.铬层的磁矩的方向是正负相间变化的,相邻的铁层和铬层之间是反铁磁性耦合的,铁原子的d轨道和铬原子的d轨道在费米能附近有中等程度的杂化.     

Influence of Interface Structure of Co/Cu （100） Superlattices on Electronic Structure and Giant Magnetoresistance

Electronic structures and magnetoresistance （MR） of Co3 Cu5 and Co3 Cur models as well as their interface atom exchange models Co2 CuCoCu4 and Co2 CuCoCu6 are investigated by the tlrst-principles pseudopotential planewave method based on density functional theory. Charge transfer, magnetic moment, density of states, spin asymmetry factor, and MR ratio are discussed. The results show that the values of charge transfer and spin asymmetry factor at the Fermi level of Co layers are closely related to the neighbouring background of the Co layer. The Co layer with two sides adjacent to the Cu layer would transfer more charge to the Cu layer than other neighbouring background and have the largest spin asymmetry factor at the Fermi level. The Co layer with two neighbouring Co layers （interior Co） would gain a little charge and have the smallest spin asymmetry factor at the Fermi level. Two-current model is used to evaluate the MR ratio of Co2CuCoCu4 （Co2CuCoCu6） to be larger than that of Co3 Cu5 （Co3 CUT）, which can be explained by the charge transfer and spin asymmetry factor.     

单层正三角锯齿型石墨烯量子点的电子结构和磁性

采用基于密度泛函理论的广义梯度近似(GGA),对不同尺寸(N=2—11)的单层正三角锯齿型石墨烯量子点(Z_N -GNDs)的结构进行优化,得到与实验数据较好符合的晶格常数,进一步计算得到不同尺寸下体系的自旋多重度、磁矩、电子态密度以及自旋电子密度.结果表明:所有体系都呈现金属性,在尺寸较小的体系中量子尺寸效应对电子结构的影响比较明显;与单层石墨烯片一样,sp²杂化作用和非键态电子在量子点中仍起到非常重要的作用;费米能级上有自旋向上的电子分布,体系的 关键词： 石墨烯 量子点 电子结构 磁性     

Ce1-xYxFe2的电子结构和磁性质

关键词：     

Half-Heusler合金Cu1-xFexMnSb的电子结构和反铁磁-铁磁相变

基于密度泛函理论（DFT）,使用局域密度近似（LDA）研究了Heusler合金Cu1-xFexMnSb的电子结构和反铁磁-铁磁相变。研究发现,两种磁状态下的合金晶格常数随掺杂浓度x变化很好地满足Vegard定理。当x>0.5时,铁磁态合金的总磁矩很好地符合SP规律,然而当x<0.5时,却发生了明显的偏离。由于整个体系存在RKKY和超交换磁耦合的竞争,因而在x=0.25时,我们观察到了独特的反铁磁—铁磁相变。进一步的态密度分析发现,Cu的掺杂浓度可以有效调整铁磁态合金的费米面位置,并且反铁磁态合金由于不同自旋方向的Mn原子的分波态密度相互补偿,总态密度形成了几乎完全对称的自旋向上带和自旋向下带。     

Half-Heusler合金Cu1-xFexMnSb的电子结构和反铁磁-铁磁相变简

基于密度泛函理论(DFT),使用局域密度近似(LDA)研究了Heusler合金Cu1-xFex MnSb的电子结构和反铁磁-铁磁相变.研究发现,两种磁状态下的合金晶格常数随掺杂浓度x变化很好地满足Vegard定理.当x0.5时,铁磁态合金的总磁矩很好地符合SP规律,然而当x0.5时,却发生了明显的偏离.由于整个体系存在RKKY和超交换磁耦合的竞争,因而在x=0.25时,我们观察到了独特的反铁磁—铁磁相变.进一步的态密度分析发现,Cu的掺杂浓度可以有效调整铁磁态合金的费米面位置,并且反铁磁态合金由于不同自旋方向的Mn原子的分波态密度相互补偿,总态密度形成了几乎完全对称的自旋向上带和自旋向下带.     

Hartree-Fock ground state of the three-dimensional electron gas

In 1962, Overhauser showed that within Hartree-Fock (HF) the electron gas is unstable to a spin-density wave state. Determining the true HF ground state has remained a challenge. Using numerical calculations for finite systems and analytic techniques, we study the unrestricted HF ground state of the three-dimensional electron gas. At high density, we find broken spin symmetry states with a nearly constant charge density. Unlike previously discussed spin wave states, the observed wave vector of the spin-density wave is smaller than 2k(F). The broken-symmetry state originates from pairing instabilities at the Fermi surface, a model for which is proposed.     

Sb系half-Heusler合金磁性及电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理方法,计算了Sb系half-Heusler合金XYSb(X=Ni,Pd,Pt;Y=Mn,Cr)的晶体结构、磁性及电子结构.计算结果表明,在平衡晶格常数下,合金NiMnSb为半金属,其他为金属.合金的总磁矩主要由Y元素自旋磁距贡献,随着元素X原子序数减小,费米能级移向自旋向下能带导带底;压缩使费米能级上移,远离Sb原子p能带,PtMnSb,PdMnSb与NiCrSb在压应力下可实现金属—磁性半金属转变. 关键词： 第一性原理 磁性 电子结构 金属—磁性半金属转变     

Orbital ordering and spin-ladder formation in La2RuO5

The semiconductor-semiconductor transition of La2RuO5 is studied by means of augmented spherical wave electronic structure calculations as based on density-functional theory and the local density approximation. This transition has lately been reported to lead to orbital ordering and a quenching of the local spin magnetic moment. Our results hint towards an orbital ordering scenario which, markedly different from the previously proposed scheme, preserves the local S=1 moment at the Ru sites in the low-temperature phase. The unusual magnetic behavior is interpreted by the formation of spin ladders, which result from the structural changes occurring at the transition and are characterized by antiferromagnetic coupling along the rungs.     

Local spin density total energy study of surface magnetism: V (100)

Results of self-consistent all-electron local (spin) density functional studies of the electronic and magnetic properties of vanadium (100) 1-, 3-, 5- and 7-layers films are reported using our full-potential linearized augmented plane wave (FLAPW) method. The calculated work function, 4.2 eV, agrees very well with the experimental value of 4.12 eV. From both Stoner factor analyses and spin-polarized total energy calculations, it is concluded that V(100) undergoes a ferromagnetic phase transition only for the monolayer system. The magnetic moment is found to be 3.09μ_B per atom of this monolayer film and to have a total energy 57 mRy below that of the paramagnetic structure. For multilayer V(001) systems, the sharp surface density-of-states peak which is characteristic of the occurrence of surface magnetism in the 3d transition metals is located 0.3 eV above the Fermi level. As a result, the paramagnetic state is stable. In addition, no enhancement of the exchange-correlation integral is found for the surface atoms compared with the bulk value. The lower energy of the paramagnetic structure is further supported by total energy investigations of the multilayer relaxation of V(100) — the calculated interlayer spacings for the paramagnetic surface with a 9% contraction of the topmost interlayer spacing and a 1% expansion of the second interlayer spacing with respect to its bulk value are in good agreement with LEED measurements. It is suggested that the surface magnetism of V(100) may be associated with surface oxygen or caused by impurity induced surface reconstructions.