Image potential states mediated STM imaging of cobalt phthalocyanine on NaCl/Cu(100)

The adsorption and electronic properties of isolated cobalt phthalocyanine(Co Pc) molecule on an ultrathin layer of NaCl have been investigated. High-resolution STM images give a detailed picture of the lowest unoccupied molecular orbital(LUMO) of an isolated CoPc. It is shown that the Na Cl ultrathin layer efficiently decouples the interaction of the molecules from the underneath metal substrate, which makes it an ideal substrate for studying the properties of single molecules. Moreover, strong dependence of the appearance of the molecules on the sample bias in the region of relatively high bias( 3.1 V) is ascribed to the image potential states(IPSs) of NaCl/Cu(100), which may provide us with a possible method to fabricate quantum storage devices.     

Increasing the optical modulation of low energy electron transmission by the deposition of copper phthalocyanine dye on Si(111)

When films of copper phthalocyanine dye (CuPc) are deposited on etched Si(111) wafers, there is approximately an order of magnitude increase in the optically modulated transmission of low energy electrons. For comparison, the relatively small optically modulated currents obtained for CuPc films on metal contacts have also been measured. This increase in the optically modulated current due to the CuPc deposition occurs for both n- and p-type Si but does not occur when an intervening layer of insulating oxide is present at the Si-phthalocyanine interface. The dependence of this increase in the optically modulated current on both the incident photon and electron energy has been examined. The dependence on photon energy is consistent with photo-generation of electron hole pairs in Si while the complicated electron energy dependence indicates that electronic interactions with the phthalocyanine molecule are probably involved.     

Bistability in scanning tunneling spectroscopy of Ga-terminated Si(111)

Bistable electron transport, a phenomenon usually associated with double-barrier structures, has been observed with a conventional STM junction formed between a metal tip and a Ga-terminated Si(111) surface at 77 K. Large hysteresis loops appear in the current-voltage characteristics when electrons are injected from the tip to the surface. The turn-on bias varies from -3.1 to -4.0 V and shows an inverse dependence on the tip-sample distance, indicating a strong field effect. The turn-off bias, however, is essentially pinned at a conductance threshold of -2.7 V.     

STM images of a large organic molecule adsorbed on a bare metal substrate or on a thin insulating layer: Visualization of HOMO and LUMO

An isomer of the methylterrylene molecule was adsorbed both on Cu(111) and on a NaCl bilayer deposited on Cu(111) and imaged by ultra high vacuum scanning tunneling microscopy at low temperature (5 K). On the bare metal surface, the STM images do not reveal any intramolecular resolution and do not depend on the applied tunnel bias. On the contrary, the images acquired at specific bias voltages for the molecule on the salt layer show a striking similarity with the spatial distribution of the electronic probability density in the highest occupied molecular orbital (HOMO) and in the lowest unoccupied molecular orbital (LUMO) of free methylterrylene. They are well reproduced by elastic scattering quantum chemistry calculations. These data provide a direct view of the hyperconjugative interaction between the methyl group and the frontier orbitals of terrylene.     

MOCVD of Fe atoms on H/Si(111) surfaces using Fe-phthalocyanine

Single Fe atoms are deposited on hydrogen-passivated Si(111) surfaces by decomposition of FePc molecules. The metal-organic molecules are evaporated from powder in a heated crucible of an electron beam source. Scanning tunneling microscopy (STM) indicates the incorporation of the central Fe atom of the molecule into H/Si(111) in the near-surface region. This provides a possible precursor state for implantation deeper into the semiconductor substrate.     

Scanning tunneling microscopy and molecular orbital calculation of pentacene molecules adsorbed on the Si(100)2×1 surface

Adsorption of the organic molecule pentacene on Si(100)2×1 surfaces was imaged using scanning tunneling microscopy (STM). The molecular images exhibit distinct shapes corresponding to the expected shapes for adsorption configurations. Semi-empirical molecular orbital (MO) calculations reveal a local surface density of states for the adsorbed pentacene on the Si surface. In the cases where the pentacene molecule is adsorbed on an Si dimer row, the calculated MOs are in good agreement with the molecular images observed in STM. In the case of pentacene adsorbed on two or three Si-dimer rows, however, the MOs of the pentacene do not correlate directly with the observed STM images. It is thus considered that the STM images are produced by a combination of Si dimer states and MO.     

第一过渡金属酞菁分子的电子结构的第一性原理计算

对第一过渡金属酞菁化合物(Metal Phthalocyanine,MPc,M=Sc,Ti,V,Cr,Mn,Fe,Co,Ni和Cu)的电子结构和基本物理化学性质进行了第一性原理计算.理论模拟出来的STM图像表现出亚分子结构,与已有的实验观察结果相当吻合,且跟金属原子的d电子组态明显有关.在小偏压条件下,第一过渡金属首尾端ScPc,NiPc和CuPc分子的中央金属离子在STM图像表现为空洞,其他所有金属酞菁分子的中央金属离子均为亮斑.同时还研究了ScPc和NiPc分子的STM图像与偏压的关系,当针尖偏压分别 关键词： STM图像模拟 金属酞菁 电子结构     

Rectification behaviour of molecular layers on Si(111)

Reproducible and strong diode-like behaviour is observed for molecular films of 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) on n-type Si(111)- 7×7 surfaces studied by scanning tunnelling microscopy (STM) and spectroscopy (STS) at 77 K. The mechanism behind the rectification is likely to be related to the electron distribution at the molecule-silicon interface. We suggest that the adsorption of the molecular layer profoundly modifies the electronic structure of the Si(111)- 7×7 surface.     

Correlations between the scanning tunneling microscopy imaged configurations and the electronic structure on stepped Si(111)-( 7x7) surfaces

We have observed the dependence of the scanning tunneling microscopy (STM) imaged atom intensity within the (7x7) unit cell on stepped Si(111) as a function of the tunneling voltage. Pronounced differences from the corresponding atom intensity on the flat surface are observed for the contrast of atoms on the low versus the high side of the step and for the contrast between the faulted versus unfaulted subcells of the (7x7) structure. These differences can be accounted for by changes in the electronic structure within the (7x7) subcells adjacent to the step. Calculations of the local density of states and the STM images using a tight-binding method are in excellent agreement with the experimental results.     

Preparing and regulating a bi-stable molecular switch by atomic manipulation

We present a scanning tunneling microscopy (STM) investigation into the influence of the STM tip on the adsorption site switching of polychlorinatedbiphenyl (PCB) molecules on the Si(111)-7?×?7 surface at room temperature. From an initially stable adsorption configuration, atomic manipulation by charge injection from the STM tip prepared a new bi-stable configuration that switched between two bonding arrangements. No switching rate bias dependence was found for +?1.0 to +?2.2?V. Assuming a thermally driven switching process we find that the measured energy barriers to switching are influenced by the exact location of the STM tip by more than 10%. We propose that this energy difference is due the dispersion interaction between the tip and the molecule.     

Structure determination of the Si3N4/Si(111)- (8 x 8) surface: a combined study of Kikuchi electron holography, scanning tunneling microscopy, and ab initio calculations

A comprehensive atomic model for the reconstructed surface of Si3N4 thin layer grown on Si(111) is presented. Kikuchi electron holography images clearly show the existence of adatoms on the Si3N4(0001)/Si(111)-(8x8) surface. Compared with the ab initio calculations, more than 30 symmetry-inequivalent atomic pairs in the outmost layers are successfully identified. Scanning tunneling microscopy (STM) images show diamond-shaped unit cells and nine adatoms in each cell. High-resolution STM images reveal extra features and are in good agreement with the partial charge density distribution obtained from total-energy calculations.     

STM characterisation of organic molecules on H-terminated Si(111)

We present the first high resolution STM images of organic molecules on the technological important hydrogen terminated silicon surface. Ordered layers of PTCDA and PTCDI were prepared on this surface by organic molecular beam epitaxy. The submolecular contrast of these molecules on Si(111)/H obtained in the high resolution images agrees with the corresponding images on HOPG and MoS₂ substrates.     

Influence of the surface morphology of single-crystal Si(111) substrates on the magnetic properties of epitaxial cobalt films

The epitaxial films Co(111)/Cu(111)-R30°/Si(111) have been grown on the atomically smooth and vicinal Si(111) surfaces. The roughnesses of the substrate and the cobalt film have been determined using scanning tunneling microscopy. The dependence of the coercive force has been investigated as a function of the azimuthal angle. The dependence of the magnetic anisotropy and the coercive force on the surface roughness has been determined. It has been shown that, in the epitaxial cobalt films deposited on the atomically smooth silicon surfaces, crystalline anisotropy of the 〈110〉 type leads to the isotropy of the magnetization reversal processes. The step-induced uniaxial anisotropy has been observed upon deposition on the vicinal surfaces. The films deposited on the atomically smooth surfaces have a complex domain structure.     

Magnetic properties of Co films grown on the modified Si(111) surface

The magnetic properties and domain structure of epitaxial Co films grown on a modified Si(111) surface were studied. First, the processes of growth of copper silicide nanostructures on the Si(111) surface were investigated. Copper silicide clusters were formed on the Si(111)-5.55 × 5.55-Cu surface at a substrate temperature of ～550°C. It was established that the nanostructures formed have a perfect faceting, and the lateral edges and long wire side are oriented along the Si〈110〉 crystallographic directions. Then, Co films were deposited on the formed structures. The investigation of the coercive force and reduced remanent magnetization showed that the Co(111) films have the sixth-order crystalline anisotropy. It was found that the coercive force of the Co films deposited on the Cu buffer layer is approximately six times less than that of the Co films deposited on the Si(111)-5.55 × 5.55-Cu surface and Si(111)?5.55 × 5.55-Cu/(Cu-Si) cluster surface.     

Controlling the width of self-assembled dysprosium silicide nanowires on the Si(001) surface

We present STM data that show that it is possible to use a metal induced 2 × 7 reconstruction of Si(001) to narrow the width distribution of Dy silicide nanowires. This behavior is distinct from the effect of the 7 × 7 reconstruction on the Si(111) surface, where the 7 × 7 serves as a static template and the deposited metal avoids the unit cell boundaries on the substrate. In this case, the 2 × 7 is a dynamic template, and the nanowires nucleate at anti-phase boundaries between 2 × 7 reconstruction domains.     

Scattering of surface state electrons at large organic molecules

The scattering of surface state electrons at Lander-type molecules on Cu(111) is investigated by means of scanning tunneling microscope (STM) experiments at low temperature and model calculations. Specific information concerning the electronic interaction of the different internal groups of the molecule with the surface is obtained. Remarkably, the central molecular wire of the molecule, although decoupled from the surface by spacer groups and therefore not visible in STM images, is the main one responsible for scattering of surface state electrons.     

Ag growth on Si(111) with an Sb surfactant investigated by scanning tunneling microscopy

We have investigated a room-temperature growth mode of ultrathin Ag films on a Si(111) surface with an Sb surfactant using STM in a UHV system. On the Sb-passivated Si surface, small sized islands were formed up to 1.1 ML. Flat Ag islands were dominant at 2.1 ML, coalescing into larger islands at 3.2 ML. Although the initial growth mode of Ag films on the Sb-terminated Si(111) surface was Volmer-Weber (island growth), the films were much more uniform than Ag growth on clean (Si(111) at the higher coverages. From the analysis of STM images of Ag films grown with and without an Sb surfactant, the uniform growth of Ag films using an Sb surfactant appears to be caused by the kinetic effects of Ag on the preadsorbed Sb layer. Our STM results indicated that Sb suppresses the surface diffusion of Ag atoms and increases the Ag-island density. The increased island density is believed to cause coalescence of Ag islands at higher coverages of Ag, resulting in the growth of atomically flat and uniform Ag islands on the Sb surfactant layer.     

Dopant-pair structures segregated on a hydrogen-terminated Si(100) surface

Novel atomic structures on a H-terminated Si(100)-(2x1)-H surface were found using scanning tunneling microscopy (STM). The structures are distinguishable only from Si dimers in empty-state STM images. They were observed on arsenic- and phosphorus-doped substrates, but not on boron-doped substrates. Surface density of these structures was found to be proportional to the dopant density in the substrate. First-principles calculations clarify that they are consisting of dopant pairs that are segregated from the bulk material. Hydrogen atoms attached to the dopant pair are found to flip between two positions on the surface due to a quantum effect.     

Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究

为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi₂/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi₂ /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异. 关键词： 2纳米岛')" href="#">TiSi₂纳米岛 Sr/Si(100)表面 扫描隧道显微镜     

Emergence and visualization of an interface state during contact formation with a single molecule

Contact formation dynamics and electronic perturbations arising from the interaction of a metallic probe and a single molecule (1,3 cyclohexadiene) bound on the Si (100) surface are examined using a series of plane wave, density functional theory calculations. The approach of the probe induces a relaxation of the molecule that ultimately leads to the formation of an interface state due to a specific interaction between the probe apex atom and the C=C bond of the molecule. The calculated interface state is located 0.2 eV above the Fermi energy, in agreement with low temperature scanning tunneling spectroscopy local density of states data (0.35 eV), and is responsible for the contrast observed in low bias empty-state STM images.