Surface dependence of field ion energy distributions,He on W

Kinetic energy distributions of helium ions produced by field ionization above the (100), (110), and (111) planes of tungsten field emitters are reported. The energy resolution of these measurements if 0.3 eV fwhm. The main peak of these distributions is found to shift by as much as 0.7 eV at $\text{F = 5.3 V/}\text{A}\text{?}$, T = 21 K, when the origin of the ions collected is changed slightly. Several possible explanations for this shift are discussed. The most plausible of these involves electron tunneling through a field adsorbed helium atom. These results have important implications for the use of field ion energy distributions as a probe of the density of electronic states of the emitter.     

Direct identification of atomic binding sites on a crystal

The atomic resolution of the field ion microscope, in conjunction with its ability to remove and identify individual atomic layers, allowed us to map unambiguously the unit cell of the (111) plane of tungsten and to determine directly the location of single tungsten atoms adsorbed on this plane. Adatoms have been observed to occupy two binding sites only. The predominant site corresponds to a normal lattice position. The second site is of similar symmetry, in that the adatom sits between three first layer atoms; however, at this position the adatom is located above an atom in the second rather than the third lattice layer. The former site is favored energetically, but only by ≈ 0.5 eV. All observations have been made at high fields, however, it is shown from studies of migration and other effects that the binding sites identified in the field ion microscope are typical of a normal, field free environment.     

Electronic states of dysprosium submonolayer films adsorbed on the W(100) surface

The unfilled electronic states of dysprosium submonolayer films absorbed on the W(100) surface are investigated using angle-resolved inverse photoelectron spectroscopy. It is shown that the energy position of the peak at 1.7 eV is independent of the angle of incidence of electrons onto the crystal surface. This specific feature is associated with electron transitions to the Dy 4f state located above the Fermi level. A correlation between the change in the energy position of this peak and the change in the work function with an increase in the absorbed dysprosium coverage suggests that the dipole moment of adatoms is affected by the dipole-dipole interaction.     

Surface diffusion of tungsten adatoms induced by low-energy bombardment with He atoms

Using low-temperature field ion microscope techniques, we studied at the atomic level the elementary events of radiation-induced surface diffusion of tungsten adatoms on the ideally pristine surface. The experiments on surface-damage formation and adatom displacements have been performed in situ with a source of neutral helium atoms with an energy of 5?keV. It was demonstrated that the low-energy He atomic bombardment at grazing incidence was able to induce a substantial surface mobility of adatoms. Most of the radiation-induced adatom displacements were oriented along the direction of irradiation. The long impact-induced jumps of adatoms, spanning more than a nearest-neighbor distance, were revealed. Performed molecular dynamics simulations reproduce the general experimental trends and conclusions.     

Imaging and tunneling spectroscopy of individual iron adsorbates at room temperature

We have imaged for the first time individual atoms and small clusters of metal species on a metal substrate at room temperature by means of a scanning tunneling microscope (STM) operated under ultrahigh vacuum conditions. The system we have studied is Fe on W(110), for which a carbon-induced (15×3)-reconstruction of the W(110) substrate has been found to prevent surface diffusion of Fe atoms at 300 K. Upon positioning the STM-tip above individual Fe adsorbates, local tunneling spectra could be obtained. A pronounced empty-state peak at 0.5 eV above the Fermi level has been found, characteristic for individual Fe adsorbates. This peak can serve as a fingerprint for the identification of Fe adsorbate species.     

Imaging and tunneling spectroscopy of individual iron adsorbates at room temperature

We have imaged for the first time individual atoms and small clusters of metal species on a metal substrate at room temperature by means of a scanning tunneling microscope (STM) operated under ultrahigh vacuum conditions. The system we have studied is Fe on W(110), for which a carbon-induced (15×3)-reconstruction of the W(110) substrate has been found to prevent surface diffusion of Fe atoms at 300 K. Upon positioning the STM-tip above individual Fe adsorbates, local tunneling spectra could be obtained. A pronounced empty-state peak at 0.5 eV above the Fermi level has been found, characteristic for individual Fe adsorbates. This peak can serve as a fingerprint for the identification of Fe adsorbate species.     

Chemical-specific imaging of multicomponent metal surfaces on the nanometer scale by scanning tunneling spectroscopy

The topographic and chemical surface structure of a submonolayer iron film on a W(110) substrate has been studied by combined scanning tunneling microscopy and spectroscopy. Local tunneling spectra revealed a pronounced difference in the electronic structure between nanometer-scale iron islands of monolayer height and the bare W(110) substrate. In particular, a pronounced empty-state peak at 0.2 eV above the Fermi level has been identified for the iron islands. Based on the pronounced difference in the local tunneling spectra measured above the iron islands and the tungsten substrate, chemical-specific imaging was achieved by performing spatially resolved measurements of the differential tunneling conductivitydl/dU (x, y) at selected sample bias voltages.     

Virtual bound states in AuTi alloys

We have measured the optical absorption of dilute AuTi alloys for photon energies from 0.1 to 4.5 eV. The extra absorption we observe below the Au interband threshold can be accounted for if the Ti impurities form virtual bound states with half-width at half height δ ～ 0.6 ± 0.2 eV centered E_d ～ 0.5 ± 0.2 eV above the Fermi level and containing 2.7 ± 0.3 electrons.     

Unraveling the symmetry of the hole states near the Fermi level in the MgB2 superconductor

We use x-ray absorption spectroscopy (XAS) and electron energy loss spectroscopy (EELS) to study the fine structure at the K edge of boron in MgB(2). We observe in XAS a peak of width 0.7 eV at the edge threshold, signaling a narrow energy region with empty boron p states near the Fermi level. The changes in the near edge structure observed in EELS with direction of the momentum transfer imply that these states have p(x)p(y) symmetry. Our observations are consistent with electronic structure calculations indicating a narrow energy window of empty p(x)p(y) states that falls to zero at 0.8 eV above the Fermi level. The disappearance of the p(x)p(y) feature in EELS at grain boundaries suggests that this signature may become powerful in probing superconductivity at nanoscale.     

Migration energy of He in W revisited by ab initio calculations

We use state of the art ab initio calculations to obtain the diffusion properties of He in tungsten. The calculated migration energy of He is very low, around 0.06 eV. This value is much lower than the experimental field-ion microscopy results which lead to a migration energy of the order of 0.24-0.32 eV. The reason for this discrepancy is the high propensity for He to form He-He clusters characterized by a very large binding energy of the order of 1 eV. Such a large binding energy indicates that He atoms can be trapped by other He atoms and can explain the formation of He blisters close to the surface of He implanted tungsten.     

Resonances in the cesium atom yield in electron-stimulated desorption from tungsten coated with a germanium monolayer

The yield and energy distributions of Cs atoms emerging from cesium layers, which are adsorbed on tungsten coated with a thin germanium film (1-to 2-monolayers thick), have been measured as a function of the incident electron energy, the amount of adsorbed cesium, and the substrate temperature. The measurements were performed by the time-of-flight technique with a surface ionization detector. At low cesium coverages (Θ < 0.1), the Cs atom appearance threshold at a substrate temperature T = 160 K is ～24 eV, which correlates with the Cs 5s-level ionization energy. As the electron energy is increased, the yield passes through a broad plateau and reaches saturation. The signal intensity in the plateau region decreases gradually with increasing cesium coverage and tends to zero for Θ > 0.14. For Θ ≥ 0.15, the cesium atom appearance threshold shifts to ～30 eV, which corresponds to the Ge 3d-level ionization energy and the plateau is replaced by a resonance peak at ～38 eV, which can be identified with the ionization energy of the W 5p _3/2 level. This peak is observed only for Θ < 0.3 and T = 160 K. For Θ ≥ 0.3, there appears a resonance peak at ～50 eV, and for Θ ≥ 0.5, another resonance peak appears at ～80 eV. These peak positions correlate with the ionization energies of the W 5p _1/2 and W 5s levels, and their intensity is maximum at Θ = 1. The Cs atom energy distributions for Θ < 0.15 consist of a bell-shaped peak with a maximum at ～0.55 eV, and those for Θ ≥ 0.15 contain two nearly resolved maxima, a broad one peaking at ～0.5 eV and a narrow one at ～0.35 eV. The above results argue for the existence of three channels of Cs atom desorption. One channel involves reverse motion of the Cs²⁺ ion; another channel, neutralization of the adsorbed Cs⁺ ion following the Auger decay of a vacancy in the Ge atom; and the third channel involves desorption of a CsGe molecule as it is repelled from a W core exciton.     

Surface self-diffusion behavior of individual tungsten adatoms on rhombohedral clusters

The diffusion of single tungsten adatoms on the surfaces of rhombohedral clusters is studied by means of molecular dynamics and the embedded atom method. The energy barriers for the adatom diffusing across and along the step edge between a {110} facet and a neighboring {110} facet are calculated using the nudged elastic band method. We notice that the tungsten adatom diffusion across the step edge has a much higher barrier than that for face-centered cubic metal clusters. The result shows that diffusion from the {110} facet to a neighboring {110} facet could not take place at low temperatures. In addition, the calculated energy barrier for an adatom diffusing along the step edge is lower than that for an adatom on the flat (110) surface. The results show that the adatom could diffuse easily along the step edge, and could be trapped by the facet corner. Taking all of this evidence together, we infer that the {110} facet starts to grow from the facet corner, and then along the step edge, and finally toward the {110} facet center. So the tungsten rhombohedron can grow epitaxially along the {110} facet one facet at a time and the rhombohedron should be the stable structure for both large and small tungsten clusters.     

Tungsten cluster migration on nanoparticles: minimum energy pathway and migration mechanism

Saddle point searches have been employed to investigate the migration mechanisms of W clusters on W nanoparticles, and to determine the corresponding migration energies for the possible migration paths of these clusters. The tungsten clusters containing up to four adatoms are found to prefer 2D-compact structures with relatively low binding energies. The effect of interface and vertex regions on the migration behavior of the clusters is significantly strong, as compared to that of nanoparticle size. The migration mechanisms are quite different when the clusters are located at the center of the nanoparticle and near the interface or vertex areas. Near the interfaces and vertex areas, the substrate atoms tend to participate in the migration processes of the clusters, and can join the adatoms to form a larger cluster or lead to the dissociation of a cluster via the exchange mechanism, which results in the adatom crossing the facets. The lowest energy paths are used to be determined the energy barriers for W cluster migrations (from 1- to 4-atoms) on the facets, edges and vertex regions. The calculated energy barriers for the trimers suggest that the concerted migration is more probable than the successive jumping of a single adatom in the clusters. In addition, it of interest to note that the dimer shearing is a dominant migration mechanism for the tetramer, but needs to overcome a relatively higher migration energy than other clusters.     

Photoelectron spectroscopy from CO adsorbed on a Cu(111) surface

He II-ultraviolet photoelectron spectra (hv = 40.8 eV) from a carbon monoxide layer adsorbed on a Cu(111) surface exhibit two peaks at 8.5 and 11.6 eV below the Fermi level and a weaker maximum centered at about 13.5 eV. The emission from the Cu d-band is markedly suppressed after adsorption. The results are discussed in terms of the recent models for assigning the UPS peaks observed after adsorption of CO on transtion metals     

Direct observation of adatom-substitutional atom interaction on dilute metal alloy surfaces

The field ion microscope is used to study interactions of a migrating tungsten adatom with substitutional rhenium atoms in the (110) plane of a W-3%Re alloy. By observing about 300 migration periods on a single (110) surface plane of a small field ion emittier, each position of the adatom with respect to deduced Re atom locations can be identified. The interaction is found to be attractive with a strength of 90 ± 7 meV at the closest equilibrium separation, and repulsive with a strength of at least 80 meV at the second closest separation. No interaction could be observed for larger separations indicating a strength of less than 10 meV. Results of a control experiment, diffusion of single W adatoms on the (110) plane of pure W, are also presented for comparison.     

CO在有K沉积的W(100)面上吸附的角分辨紫外光电子能谱

在不同K覆盖度的W(100)面上吸附CO的Hel紫外光电子能谱研究表明:α和β态的CO由于K的影响,吸附状态发生改变,与CO分子态(α态)有关的5σ/1π分子轨道能级随K覆盖度的增加,结合能位置从8.6eV移到9.3eV,反映K出现后,衬底对α-CO分子反施的增强。在与CO分解态(β态)有关的谱峰位置上(结合能为5.5eV)出现两个离散的谱峰,一个在6.0eV左右,另一个在5.2eV左右。其中结合能在5.2eV左右的谱峰强度随K的覆盖度增加而增大,它的能量位置与O在K覆盖的W(100)面上吸附时的能级位置 关键词：     

Tunneling electron induced bromine hopping on Si(100)-(2 x 1)

Tunneling electrons from the tip of a scanning tunneling microscope can be used to induce adatom hopping on Br-terminated Si(100)-(2x1) at low current and without voltage pulses. Hopping does not occur when electrons tunnel from a sample to a tip. The threshold energy is +0.8 V, and tunneling spectroscopy shows antibonding Si-Br states 0.8 eV above the Fermi level. Electron capture in these states is a necessary condition for hopping, but repulsive adsorbate interactions that lower the activation barrier are also required. Such interactions are strong near saturation for Br but are insufficient when the coverage is low or when Br is replaced by Cl.     

Electron energy loss spectroscopy study of the initial stage of lanthanum oxidation

The electron energy loss spectra (EELS) of a pure metallic lanthanum surface and variations in these spectra at the initial stages of surface oxidation were studied. The measurements were performed at primary-electron beam energies E _p from 200 to 1000 eV. A very pronounced peak at a loss energy of about 7.5 eV arises due to transitions from the La4d electronic states of the valence band into the empty La4f electronic states of the conduction band at 5.0–5.5 eV above the Fermi level. Marked changes are observed in the EELS during the oxidation of lanthanum: the peak at an energy of 7.5 eV disappears, and the peak at 13.5 eV corresponding to bulk collective energy loss in lanthanum oxide becomes more pronounced. The results obtained are discussed in terms of the electronic structure of lanthanum and lanthanum oxide.     

Subthreshold sputtering at high temperatures

The sputtering of tungsten from a target at a temperature of 1470 K during irradiation by 5-eV deuterium ions in a steady-state dense plasma is discovered. The literature values of the threshold for the sputtering of tungsten by deuterium ions are 160–200 eV. The tungsten sputtering coefficient measured by the loss of weight is found to be 1.5×10^?4 atom/ion at a deuterium ion energy of 5 eV. Previously, such a sputtering coefficient was usually observed at energies of 250 eV. The sputtering is accompanied by a change in the target surface relief, i.e., by the etching of the grain boundaries and the formation of a wavy structure on the tungsten surface. The subthreshold sputtering at a high temperature is explained by the possible sputtering of adsorbed tungsten atoms that are released from the traps around the interstitial atoms and come to the target surface from the space between the grains. The wavy structure on the surface results from the merging of adsorbed atoms into ordered clusters.     

Electron-stimulated desorption of cesium atoms from cesium layers deposited on a germanium-coated tungsten surface

The yield and energy distribution of Cs atoms from cesium layers adsorbed on germanium-coated tungsten were measured, using the time-of-flight technique with a surface-ionization-based detector, as a function of the energy of bombarding electrons, germanium film thickness, the amount of adsorbed cesium, and substrate temperature. The threshold for the appearance of Cs atoms is ～30 eV, which correlates well with the germanium 3d-level ionization energy. As the electron energy increases, the Cs atom yield passes through a broad maximum at ～120 eV. For germanium film thicknesses from 0.5 to 2 monolayers, resonance Cs yield peaks were observed at electron energies of 50 and 80 eV, which can be related to the tungsten 5p and 5s core-level ionization energies. As the cesium coverage increases, the Cs atom yield passes through a flat maximum at monolayer coverage. The energy distribution of Cs atoms follows a bell-shaped curve. With increasing cesium coverage, this curve shifts to higher energies for thin germanium films and to lower energies for thick films. The Cs energy distribution measured at a substrate temperature T = 160 K exhibits two bell-shaped peaks, namely, a narrow peak with a maximum at ～0.35 eV, associated with tungsten core-level excitation, and a broad peak with a maximum at ～0.5 eV, deriving from the excitation of the germanium 3d core level. The results obtained can be described within a model of Auger-stimulated desorption.