Monte Carlo simulated annealing study of mixed Si–Ge and C–C dimer adsorption on a Si (001) 2×1 surface

Energetics and structural relaxations related to the surface complexes formed by mixed Si–Ge and C–C dimer adsorption on predefined adsorption sites on a (2×1) reconstructed Si (001) surface are investigated. Monte Carlo simulated annealing procedure is used in conjugation with Tersoff's semi-empirical potentials. The reliability check of the method is performed by comparing our results for the case of Si–Ge dimer adsorption with the results reported by using ab initio pseudo-potential calculations. The agreement is found to be good. For carbon dimer adsorption, the nucleation centers are found to be different from those for Si and Ge. It is seen that carbon has a tendency to get adsorbed at the dangling bond site, or to form a Si–C–C–Si chain like structure under specific conditions.     

甲烷在多孔硅表面物理吸附特征研究

在密度泛函理论耦合超软贋势第一性原理的平台上,研究了甲烷在Si(111)表面的物理吸附特性。通过建立硅晶胞的不同吸附位置（top、bridge、fcc）模型,对比分析了甲烷在相应位置吸附界面变化的键结构、吸附能和态密度,获得了相应吸附点的吸附特征。对比分析的结果表明,甲烷只有在top位置物理吸附状态较为理想。分析态密度、键长及键角等数据揭示top位甲烷吸附对体系硅晶胞有很大的影响,其体系的键能最低,即此时体系结构最稳定。本文所得研究成果可用于Si表面对甲烷气体的敏感性分析及气体传感器领域。     

甲烷在多孔硅表面物理吸附特征研究(英文)

在密度泛函理论耦合超软贋势第一性原理的平台上,研究了甲烷在Si(111)表面的物理吸附特性.通过建立硅晶胞的不同吸附位置(top、bridge、fcc)模型,对比分析了甲烷在相应位置吸附界面变化的键结构、吸附能和态密度,获得了相应吸附点的吸附特征.对比分析的结果表明,甲烷只有在fcc位置物理吸附状态较为理想.分析态密度、键长及键角等数据揭示fcc位甲烷吸附对体系硅晶胞有很大的影响,其体系的键能最低,即此时体系结构最稳定.本文所得研究成果可用于Si表面对甲烷气体的敏感性分析及气体传感器领域.     

MoO_3/Si界面区钼掺杂非晶氧化硅层形成的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,通过模拟MoO_3/Si界面反应,研究了MoO_x薄膜沉积中原子、分子的吸附、扩散和成核过程,从原子尺度阐明了缓冲层钼掺杂非晶氧化硅(a-SiO_x(Mo))物质的形成和机理.结果表明,在1500 K温度下, MoO_3/Si界面区由Mo, O, Si三种原子混合,可形成新的稳定的物相.热蒸发沉积初始时, MoO_3中的两个O原子和Si成键更加稳定,同时伴随着电子从Si到O的转移,钝化了硅表面的悬挂键. MoO_3中氧空位的形成能小于SiO_2中氧空位的形成能,使得O原子容易从MoO_3中迁移至Si衬底一侧,从而形成氧化硅层;替位缺陷中, Si替位MoO_3中的Mo的形成能远远大于Mo替位SiO_2中的Si的形成能,使得Mo容易掺杂进入氧化硅中.因此,在晶硅(100)面上沉积MoO_3薄膜时, MoO_3中的O原子先与Si成键,形成氧化硅层,随后部分Mo原子替位氧化硅中的Si原子,最终形成含有钼掺杂的非晶氧化硅层.     

Hydrogen-induced surface metallization of beta-SiC(100)-(3x2) revisited by density functional theory calculations

Recent experiments on the silicon terminated (3 x 2)-SiC(100) surface indicated an unexpected metallic character upon hydrogen adsorption. This effect was attributed to the bonding of hydrogen to a row of Si atoms and to the stabilization of a neighboring dangling bond row. Here, on the basis of density-functional calculations, we show that multiple-layer adsorption of H at the reconstructed surface is compatible with a different geometry: in addition to saturating the topmost Si dangling bonds, H atoms are adsorbed at rather unusual sites, i.e., stable bridge positions above third-layer Si dimers. The results thus suggest an alternative interpretation for the electronic structure of the metallic surface.     

Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption

The initial stage of hydrogen (H) adsorption on the Si(001) surface is theoretically investigated to clarify the atomic and electronic structure induced by the adsorption. For this purpose, the electronic states are calculated in the density functional approach with the DV(discretized variation)-Xα-LCAO method. We also simulate the scanning tunneling microscopy (STM) image and the scanning tunneling spectroscopy (STS) spectrum in the first-principles approach. Our results of the STM image do not support the asymmetric dimer structure of the substrate with a H atom bonded to the upper Si atom. They conclude that the bright ball-like spot in the observed images comes from the free dangling bond induced on the remaining Si atom of the reacted dimer. However, the single particle picture cannot reproduce the observed features of the STS spectrum at the spot. We discuss that all the features can be well explained by the Coulomb blockade effect due to the electron correlation in the dangling bond state.     

Low-energy D scattering from Cs and CsCl adsorbed on the Si(100)2 × 1 surface

On the basis of neutralization and inelastic scattering of low-energy D⁺ ions, the bond nature of Cs and CsCl adsorbed on the Si(100)2 × 1 surface has been investigated. In a low-coverage regime ( < 0.2 ML), Cs is adsorbed ionically on Si(100) and subsequent oxygen adsorption readily causes the ionic Cs---O bond. CsCl is dissociatively adsorbed on the surface in a low-coverage regime due to the preferential reaction of Cl with the Si dangling bond and the resultant Cs is ionically bonded to Si.     

Predicting and researching adsorption configurations of pyridazine on Si(100) surface by means of X-ray spectroscopies in theory

The landscape of organic molecule on Si(100) surface has a great significance for organic functionalisation of Si semiconductor. Several possible adsorption configurations for pyridazine on Si(100) surface have been forecasted by systemic comparison and investigation. The C1s XPS and NEXAFS spectra of these adsorption systems based on density functional theory and full core-hole potential approximation have been calculated. Although the sensibility of XPS to these adsorption configurations is not very strong, these configurations can be absolutely distinguished by NEXAFS spectra, which will bring tremendous reference to the future experimental study. Mode II, III, V and VI have a significantly higher adsorption energy, which are most likely to be present in experiment. In addition, we have made the research on specific sources of the peaks in spectra by analysing their decomposed NEXAFS spectra, the results show that the Carbon atoms which do not bond to surface atoms, make the most contribute to the intensity of characteristic peaks in spectra.     

Effect of adsorption of group VI atoms on the silicon work function

A model of the adsorption of S, Se, and Te atoms on silicon is proposed. The model adequately describes the variation of the work function of the S/Si(100) and Se/Si(111) systems over the coverage range from zero to one monolayer. The S-Si, Se-Si, and Te-Si adsorption bond energies are estimated using the bonding-orbital method.     

Charge exchange in Li scattering from Si surfaces

Neutral fractions are measured for 4 keV 7Li(+) scattering from clean, hydrogen-covered, and cesiated Si surfaces. The neutral fraction in scattering from clean Si is approximately 26% and it decreases with hydrogen adsorption. When Cs is adsorbed on Si, the neutral fraction does not distinguish the local potential at the Cs sites from the Si sites, unless hydrogen is coadsorbed. These results demonstrate that resonant charge transfer occurs due to coupling of the Li ionization level with the dangling bond surface states, and that the influence of the dangling bonds extends beyond the local scattering sites.     

Tetra-σ bonding adsorption of pyridine on Si(1 0 0)-2 × 1

We studied adsorption of pyridine on Si(1 0 0) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray adsorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, N 1s spectra of pyridine on Si(1 0 0) showed that pyridine is chemisorbed on Si(1 0 0)-2 × 1 through the formation of the tetra-σ-bonded structure with the N atom and three C atoms. NEXAFS was conducted to characterize the adsorption geometry of pyridine on Si(1 0 0). The π* orbital of CC bond showed a good angle dependence in C K-edge NEXAFS spectra, and we were able to estimate the adsorption angle between chemisorbed pyridine of CC bond and the Si(1 0 0) surface using an analytical solution of NEXAFS intensity. We find the coexistence of two different tight bridges with the adsorption angles 42 ± 2° and 45 ± 2° with almost equal abundance.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Theoretical study of interaction between atoms of Au, Ag, Cu and clean Si(1 1 1) surface

To evaluate the interactions between the atoms of Au, Ag and Cu and clean Si(1 1 1) surface, two types of silicon clusters Si₄H₇ and Si₁₆H₂₀ together with their metal complexes were studied by using hybrid (U)B3LYP density functional theory method. Optimized geometries and energies on different adsorption sites indicate that: (1) the binding energies at different adsorption sites are large (ranging from 1.2 to 2.6 eV depend on the metal atoms and adsorption sites), suggesting a strong interaction between metal atom and silicon surface; (2) the most favorable adsorption site is the on top (T) site. Mulliken population analysis indicated that in the system of on top (T) site, a covalent bond is formed between metal atom and dangling bond of surface Si atom.     

Adsorption of Al on the Si(0 0 1) surface

The first-principles calculations have been presented to study the adsorption of aluminum (Al) on the Si(0 0 1)(2×1) surface. We have investigated the optimized geometries and electronic structures of the adatom-substrate system. The adsorption energy of the system has been calculated. The most stable adsorption sites were consequently determined to be HH site and T3+T4. It is shown that the Si-Si dimer is asymmetric on the reconstructed bare surface and become symmetric upon Al adsorption. In addition, the bond length of Si-Si was found to be considerably elongated in the adsorption system. It is found that the work function change obtained in our work is different from other previous results on the adsorption of alkali metals on the Si(0 0 1) surface. In order to investigate the relative stability of phases at different coverages, the surface formation energy of the adsorption system was calculated. To shed light on the nature of the Al-Si bond and the character of silicon surface, the density of states (DOS) and difference charge density of the system were evaluated.     

Thermal decomposition of 1,1-dimethylhydrazine on Si(100)-2 × 1

The surface reaction of 1,1-dimethylhydrazine (DMH) with Si(100) has been studied with temperature programmed desorption spectroscopy (TPD), temperature programmed static secondary ion mass spectrometry (TPSSIMS), X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Adsorption of DMH on Si(100) at 170 K followed by annealing to 1100 K results in significant decomposition to form surface carbide and nitride. TPD results show that the only gas phase desoprtion products are hydrogen and dimethylamine. Furthermore, decomposition occurs over a broad temperature range; XPS and TPSIMS results indicate C---N bond cleavage beginning at 400 K and by 600 K, all the C---N bonds have dissociated. We propose a molecular level mechanism that involves partial decomposition upon adsorption followed by extensive bond cleavage to form surface carbide and nitride.     

Adsorption of Ag on Si(1 0 0) surface

The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E_ad) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fourfold site) than on any other sites on Si(1 0 0) surface, the polar covalent bond is formed between Ag atom and surface Si atom, a Ag and Si mixed layer does not exist and does form an abrupt interface at the Ag–Si(1 0 0) interface. This is in agreement with the experiment results. The layer-projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated. Comparing with the Au/Si(1 0 0) system, the interaction is weaker between Ag and Si than between Au and Si.     

Ge(112)-(4×1)-In表面重构的原子结构

用扫描隧道显微镜(STM)研究了亚单层In原子引起的Ge(112)-(4×1)-In表面重构.结合随偏压极性不同而显著不同的STM图象和相应的“原子图象”,为这个重构提出了一个原子结构模型,供进一步研究参考.其中,In原子的吸附位置与它在Si(112)表面的吸附位置一致,但与Al原子和Ga原子在Si(112)表面的吸附位置不同.这个吸附位置的不同主要是由In原子较长的共价键键长引起的 关键词： 表面结构 In Ge 扫描隧道显微镜(STM)     

Conformational isomers of stilbene on Si(1 0 0)

Stilbene (1,2-diphenylethylene) has shown an intriguing isomerisation behavior and may serve as a model system for “molecular switches” incorporating a CC double bond. To evaluate the possible use of such molecules as molecular switches on semiconductor surfaces, the adsorption of cis- and trans-stilbene on Si(1 0 0) has been investigated. Identification of both isomers is achieved by differences in adsorption geometry as revealed by NEXAFS, and differences in electronic structure in the occupied and unoccupied molecular orbitals. For both isomers, bonding takes place via the CC double bond to the Si dimer atoms allowing for free movement of the aromatic rings, a necessary prerequisite for photoinduced isomerisation on the surface. Our experimental results agree well with theoretical calculations.     

Adsorption kinetics and dynamics of small organic molecules on a silica wafer: Butane, pentane, nonane, thiophene, and methanol adsorption on SiO2/Si(1 1 1)

The adsorption kinetics (by thermal desorption spectroscopy) and adsorption dynamics (by molecular beam scattering) have been determined for a number of alkanes, methanol, thiophene, and water on a silica wafer—SiO₂/Si(1 1 1). No indications for bond activation were present, i.e., all probe molecules adsorb molecularly obeying 1st order kinetics. The coverage-dependent heat of adsorption has been determined accordingly. The adsorption dynamics are precursor-mediated with Kisliuk-like shapes of the adsorption probabilities at low impact energies and adsorbate-assisted adsorption at large impact energies.