Spin-polarized current produced by a double barrier resonant tunneling diode

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) made with a semimagnetic semiconductor is studied theoretically. The calculated spin-polarized current and polarization degree are in agreement with recent experimental results. It is predicted that the polarization degree can be modulated continuously from +1 to −1 by changing the external voltage such that the quasi-confined spin-up and spin-down energy levels shift downwards from the Fermi level to the bottom of the conduction band. The RTD with low potential barrier or the tunneling through the second quasi-confined state produces larger spin-polarized current. Furthermore a higher magnetic field enhances the polarization degree of the tunneling current.     

Coulomb drag, magnetoresistance, and spin-current injection in magnetic multilayers

We study the effect of spin Coulomb drag on the magnetoresistance and the spin-current injection efficiency of a layered structure consisting of a nonmagnetic semiconductor sandwiched between two ferromagnetic electrodes of spin polarization p. The calculations are done within the framework of the drift-diffusion theory, which we generalize to include the spin trans-conductivity σ_↑↓. We find that for p close to 100% the spin drag enhances the magnetoresistance, while for smaller values of p it reduces it. A new approach to the measurement of σ_↑↓ is suggested.     

The effect of additional Si and SiGe layers on the confinement potential of GeMn diluted ferromagnetic semiconductor

In this work we analyze the spin-polarized charge density distribution in the GeMn diluted ferromagnetic semiconductors (DFS). The calculations are performed within a self-consistent k·p method, in which the exchange correlation effects in the local density approximation, as well as the strain effects due to the lattice mismatch, are taken into account. Our findings show that the extra confinement potential provided by the barriers and the variation of the Mn content in the DFS are responsible for a separation between the different spin charge densities, giving rise to higher mobility spin-polarized currents or high ferromagnetism transition temperatures systems.     

Ferromagnetism in dilute magnetic semiconductors and new materials for spintronics

Spintronics materials may be classified under concentrated magnetic semiconductors, semimetals and half-metals, semimagnetic semiconductors, and dilute magnetic semiconductors (DMS). The nature of ferromagnetism, that occurs in p-type DMS with an increase in the transition metal content, is governed by the proposed kinematic exchange involving the kinetic energy gain of the heavy hole carriers caused by their hybridization with 3d electrons of impurities. The synthesis of DMS (In,Mn)Sb is proposed on the basis of hint at its T_C from kinematic mechanism. The effect of the dimensionality-driven T_C increase is derived for spintronics materials such as delta-doped DMS (DDMS) and DMS heterostructures. The state-of-the-art in the field of synthesis and research of “new” DMS with announced “high T_C” is also outlined with particular attention to chalcopyrite-based systems.     

GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响

通过理论计算研究GaMnN铁磁共振隧穿二极管自旋电流输运特性.理论结果表明在电流特性曲线上出现两个明显的自旋分裂峰.该电流自旋分裂峰和相应的自旋极化随温度的升高而逐渐减小消失.当进一步考虑到GaN异质结界面极化电荷影响时,自旋向下的电流共振峰得到明显增强,同时电流的自旋极化也得到相应的提高.在一定的极化电荷条件下,可以获得较高的自旋极化电流. 关键词： GaMnN 共振隧穿 自旋电流 极化电荷     

Spin-polarized tunneling in ferromagnetic double barrier junctions

Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers. Received 9 June 2001 and Received in final form 20 August 2001     

Pre-edge features in X-ray absorption structure of Mn in GaMnN,GaMnAs and GeMn

_Ga1-xMnxN${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{N}$ samples with a wide range of concentrations, from x=0.003$x=0.003$ to 0.057, were grown by molecular beam epitaxy. X-ray diffraction and the simulation of the extended X-ray absorption fine structure (EXAFS) confirmed the wurtzite structure of the samples, without any secondary phase, and the location of Mn in the gallium sublattice of GaN. The valence state of Mn was studied using the X-ray absorption near-edge structure (XANES) at the K-edge of Mn. The shape of the measured XANES spectra does not depend on the Mn concentration: that implies the same valence state and local atomic structure around the Mn atom in all samples. A calculation of the electronic band structure of GaMnN, GaMnAs, GeMn and the XANES spectra of Mn in GaMnN was performed using the linearized augmented plane wave (LAPW) method. The calculated spectra fit well our experimental data. In particular, the comparison demonstrates that a peak in the pre-edge structure is directly related to the 3+$3+$ valence state of Mn. This was confirmed experimentally by measurements of the Mn K-edge in GaMn²⁺As${\mathrm{GaMn}}^{2+}\mathrm{As}$ and ZnMn²⁺Te${\mathrm{ZnMn}}^{2+}\mathrm{Te}$. An application of proposed interpretation for GeMn is discussed.     

The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures

We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band offset based on the experimental data, we found that the spin current densities strongly depend on the Mn concentration. The magnitude as well as the sign of the electron-spin polarization and the tunnel magnetoresistance can be tuned by varying the Mn concentration, the width of the paramagnetic layer, and the external magnetic field. By an appropriate choice of the Mn concentration and the width of the paramagnetic layer, the degree of spin polarization for the output current can reach 100% and the device can be used as a spin filter.     

Enhanced ferromagnetic properties of diluted Fe doped ZnO with hydrogen treatment

The single-phase diluted magnetic Fe-ion (5%) doped ZnO powders were prepared by solid-state reaction method. The powders were annealed in Ar or Ar/H₂(5%) atmosphere at 1200 °C. The crystal structure, electric and magnetic properties for the Zn_0.95Fe_0.05O powders have been studied with X-ray diffraction (XRD) vibrating sample magnetometer, resistance and Hall measurement. All the peaks for the XRD pattern of samples belong to the hexagonal (P6₃mc) lattice of ZnO, and no indication of a secondary phase. The lattice parameters for the Zn_0.95Fe_0.05O with an annealing in Ar/H₂(5%) atmosphere were a₀=3.256 Å and c₀=5.206 Å at room temperature. The hysteresis curve for the Zn_0.95Fe_0.05O at room temperature was enhanced ferromagnetic behaviour with an annealing in Ar/H₂(5%) atmosphere. We give an explanation for enhanced ferromagnetic behaviour with H₂ treatment by electric properties.     

On the understanding of the microscopic origin of the properties of diluted magnetic semiconductors by atom probe tomography

Spintronics, in which both the spin and charge of electrons are used for logic and memory operations, promises to revolutionize the current information technology. Just as silicon supports microelectronics, diluted magnetic semiconductors (DMSs) will be the platform of spintronics. Ideal DMSs should maintain ferromagnetic and semiconducting properties at operating temperatures to realize the spintronic functions. Although many high-temperature Curie temperature DMSs have been reported, the origin of ferromagnetism remains controversial. Currently, this is a major obstacle to the development of spintronic devices. The solution to this problem depends on a more complete understanding of DMS microstructure, especially the distribution of doped magnetic ions at atomic resolution and any defects introduced. Therefore, an analysis technique is required, possessing both high spatial and elemental resolutions, which is beyond the capability of conventional techniques, such as electron microscopy. However, atom probe tomography (APT), which recently has been successfully applied to nanoscale characterization of structural materials, has the potential to provide the unique combination of near atomic spatial and elemental resolutions needed for such an investigation.     

Spin-polarized transport in one-dimensional waveguide structures with spatially-periodic electronic and magnetic fields

We investigate theoretically the spin-polarized transport in one-dimensional waveguide structure with spatially-periodic electronic and magnetic fields. The interplay of the spin-orbit interaction and in-plane magnetic field significantly modifies the spin-dependent transmission and the spin polarization. The in-plane magnetic fields increase the strength of the Rashba spin-orbit coupling effect for the electric fields along y axis and decrease this effect for reversing the electric fields, even counteract the Rashba spin-orbit coupling effect. It is very interesting to find that we may deduce the strength of the Rashba effect through this phenomenon.     

Spin-dependent shot noise in diluted-magnetic-semiconductor/ semiconductor heterostructures

We investigated the shot noise properties in the diluted-magnetic-semiconductor/semiconductor heterostructures, where the sp-d exchange interaction gives rise to a giant spin splitting when an external magnetic field is applied along the growth direction of the heterostructures. It is found that the noise becomes strongly spin-dependent and can be greatly modulated not only by the external magnetic and electric fields, but also by the structural configuration and geometric parameters. Both the spin-up and spin-down components of the noise spectral density can be greatly suppressed by the magnetic field. The Fano factor is notably sensitive to the transmission probabilities, which varies greatly with the spin-polarization, the external magnetic field, and the structural configuration.     

Inter-particle spin-polarized tunneling in arrays of magnetite nanocrystals

Inter-particle spin-polarized tunneling was measured in an organically capped magnetite nanocrystal (NC) array deposited between 30 nm spaced gold electrodes. Magnetoresistance (MR) measurements performed around the blocking temperature (T_b) of the magnetic moments of the particles in the array, which was relatively high (220 K), yielded negative MR values of the order of 10-25% under moderate magnetic fields of several kOe. The field dependence of the MR followed closely the square of the film's magnetization and its voltage dependence indicated maximal spin polarization around the Fermi level. These findings suggested that the measured MR is the result of spin-polarized tunneling between individual magnetite NCs acting as superparamagnetic spin polarizers.     

Periodic structure of spin-transfer current in ferromagnetic multilayers

We show that the drift-diffusion mechanism in a normal-metal layer in combination with the resonance electron–magnon interactions at ferromagnet-normal interface of F–N–F heterostructure creates spatial instability modes and, out of these modes, a quasi-stable periodic structure of spin-transfer d.c. current can arise with certain channel step and step-to-radius ratio. The ferromagnetic resonance conditions determine spin-transfer current density. Independent nanooscillators creating intersecting arrays of channels can phase-lock on sub-micrometer distance, which depends on multilayer geometry and applied fields. By decreasing the layer thickness, the number of channels affected by each independent d.c.-current source and their radius may be diminished. Phase-locking of multiple independent nanooscillators can be used for enhancement of output power.     

Spin-dependent conductance in FM/quantum-dot/FM tunneling system

We present a theoretical study of the spin-dependent conductance spectra in a FM/semiconductor quantum-dot (QD)/FM system. Both the Rashba spin-orbit (SO) coupling in the QD and spin-flip scattering caused by magnetic barrier impurities are taken into account. It is found that in the single-level QD system with parallel magnetic moments in the two FM leads, due to the interference between different tunneling paths through the spin-degenerate level, a dip or a narrow resonant peak can appear in the conductance spectra, which depends on the property of the spin-flip scattering. When the magnetizations of the two FM leads are noncollinear, the resonant peak can be transformed into a dip. The Rashba SO coupling manifests itself by a Rashba phase factor, which changes the phase information of every tunneling path and can greatly modulate the conductance. When the QD has multiple levels, the Rashba interlevel spin-flip effect appears, which changes the topological property of the structure. Its interplay with the Rashba phase can directly tune the coupling strengths between dot and leads, and can result in switching from resonance into antiresonance in the conductance spectra.     

Phenomenological band structure model of magnetic coupling in semiconductors

A unified band structure model is proposed to explain the magnetic ordering in Mn-doped semiconductors. This model is based on the p-d and d-d level repulsions between the Mn ions and host elements and can successfully explain magnetic ordering observed in all Mn doped II-VI and III-V semiconductors such as CdTe, GaAs, ZnO, and GaN. The model can also be used to explain the interesting behavior of GaMnN, which changes from ferromagnetic ordering to antiferromagnetic ordering as the Mn concentration increases. This model, therefore, is useful to provide a simple guideline for future band structure engineering of magnetic semiconductors.     

A study of room-temperature ferromagnetism in transition metal and fluorine-doped spray-pyrolyzed SnO2 thin films

Room-temperature ferromagnetism has been observed in Co- or Mn-doped SnO₂ and Co- and F-co-doped SnO₂ thin films. A maximum magnetic moment of 0.80μ_B/Co ion has been observed for Sn_0.90Co_0.10O_1.925−δF_0.075 thin films, whereas in the case of Sn_1−xMn_xO_2−δ it was 0.18μ_B/Mn ion for x=0.10. The magnetization of both Sn_1−xCo_xO_2−δ and Sn_1−xCo_xO_2−y−δF_y thin films depends on the free carrier concentration. An anomalous Hall effect has been observed in the case of Co-doped SnO₂ films. However, the same was not observed in the case of Mn-doped SnO₂ thin films. Carrier-mediated interaction is convincingly proved to be the cause of ferromagnetism in the case of Co:SnO₂. It is, however, proposed that no carrier-mediated interaction exists in the case of Mn:SnO₂. Present studies indicate that dopants and hence electronic cloud-lattice interaction plays an important role in inducing ferromagnetism.     

Magnetic excitations in ferromagnetic semiconductors

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors.     

Photocurrent spin diode: Electrically controlled sign reversal of current polarization

We report a study of spin-dependent transport through a quantum dot irradiated by continuous circularly polarized light resonant to the electron-heavy hole transition. We use the nonequilibrium Green's function to calculate the spin accumulation, spin-resolved currents, and current polarization in the presence of an external bias and intradot Coulomb interaction. It is found that for a range of external biases sign reversal of the current polarization can be modulated. The system thus operates as a rectifier for spin current polarization. This effect follows from the interplay between the external irradiation and the Coulomb repulsion. The spin-polarized transport through a three-terminal device is also discussed. Spin current with high polarization could be obtained due to spin filter effect.     

Non-Abelian hydrodynamics and the flow of spin in spin-orbit coupled substances

Motivated by the heavy ion collision experiments there is much activity in studying the hydrodynamical properties of non-Abelian (quark-gluon) plasmas. A major question is how to deal with color currents. Although not widely appreciated, quite similar issues arise in condensed matter physics in the context of the transport of spins in the presence of spin-orbit coupling. The key insight is that the Pauli Hamiltonian governing the leading relativistic corrections in condensed matter systems can be rewritten in a language of SU(2) covariant derivatives where the role of the non-Abelian gauge fields is taken by the physical electromagnetic fields: the Pauli system can be viewed as Yang-Mills quantum-mechanics in a ‘fixed frame’, and it can be viewed as an ‘analogous system’ for non-Abelian transport in the same spirit as Volovik’s identification of the He superfluids as analogies for quantum fields in curved space time. We take a similar perspective as Jackiw and coworkers in their recent study of non-Abelian hydrodynamics, twisting the interpretation into the ‘fixed frame’ context, to find out what this means for spin transport in condensed matter systems. We present an extension of Jackiw’s scheme: non-Abelian hydrodynamical currents can be factored in a ‘non-coherent’ classical part, and a coherent part requiring macroscopic non-Abelian quantum entanglement. Hereby it becomes particularly manifest that non-Abelian fluid flow is a much richer affair than familiar hydrodynamics, and this permits us to classify the various spin transport phenomena in condensed matter physics in an unifying framework. The “particle based hydrodynamics” of Jackiw et al. is recognized as the high temperature spin transport associated with semiconductor spintronics. In this context the absence of faithful hydrodynamics is well known, but in our formulation it is directly associated with the fact that the covariant conservation of non-Abelian currents turns into a disastrous non-conservation of the incoherent spin currents of the high temperature limit. We analyze the quantum-mechanical single particle currents of relevance to mesoscopic transport with as highlight the Ahronov-Casher effect, where we demonstrate that the intricacies of the non-Abelian transport render this effect to be much more fragile than its abelian analog, the Ahronov-Bohm effect. We subsequently focus on spin flows protected by order parameters. At present there is much interest in multiferroics where non-collinear magnetic order triggers macroscopic electric polarization via the spin-orbit coupling. We identify this to be a peculiarity of coherent non-Abelian hydrodynamics: although there is no net particle transport, the spin entanglement is transported in these magnets and the coherent spin ‘super’ current in turn translates into electric fields with the bonus that due to the requirement of single valuedness of the magnetic order parameter a true hydrodynamics is restored. Finally, ‘fixed-frame’ coherent non-Abelian transport comes to its full glory in spin-orbit coupled ‘spin superfluids’, and we demonstrate a new effect: the trapping of electrical line charge being a fixed frame, non-Abelian analog of the familiar magnetic flux trapping by normal superconductors. The only known physical examples of such spin superfluids are the ³He A- and B-phase where unfortunately the spin-orbit coupling is so weak that it appears impossible to observe these effects.