Investigation of the magnetization reversal of a magnetic dot array of Co/Pt multilayers

The magnetization reversal behavior of a dot array consisting of Co/Pt multilayers with perpendicular magnetic anisotropy was investigated. The size of the dots was varied from 200 nm down to 40 nm, while keeping the filling factor constant at about 0.16. The structural properties were determined by scanning electron microscopy, whereas the magnetic investigation was performed using SQUID and MFM techniques. It was observed that the dot size has a severe impact on the magnetization reversal mechanism where only the smallest dots with a size of 40 nm are found to be in a magnetic single-domain state. Moreover, the patterning process leads to a degradation of the multilayer, leading to a reduction of the switching field and an increase of the switching field distribution with decreasing dot size. In addition, micromagnetic simulations were performed to understand the magnetization reversal mechanism in more detail.     

Magnetization behavior of nanomagnets for patterned media application

Bit patterned media (BPM) which utilize each magnetic nanostructured dot as one recorded bit has attracted much interest as a promising candidate for future high-density magnetic recording. In this study, the magnetization reversal behaviors of nanostructured L1₀-FePt, Co/Pt multilayer (ML), and CoPt/Ru dots are investigated. For Co/Pt and CoPt/Ru nanodots, the bi-stable state is maintained in a very wide size range up to several hundred nm, and the magnetization reversal is dominated by the nucleation of a small reversed nucleus with the dimension of domain wall width. On the other hand, the critical size for the bi-stability of L1₀-FePt is about 60 nm, and its magnetization reversal proceeds via domain wall displacement even for such a small dot size. These reversal behaviors, depending on the magnetic materials, might be attributed to the difference in structural inhomogeneity, such as defects. In addition to the magnetic properties, the structural uniformity of the material could be crucial for the BPM application.     

Asymmetrically shaped hysteresis loop in exchange-biased FeNi/FeMn film

The magnetization reversal of the bilayer polycrystalline FeNi(50 Å)/FeMn(50 Å) film sputtered in a magnetic field has been studied by magnetic and magneto-optical techniques. The external magnetic fields were applied along the easy or hard magnetization axis of the ferromagnetic permalloy layer. The asymmetry of hysteresis loop has been found. Appreciable asymmetry and the exchange bias were observed only in the field applied along the easy axis. The specific features of magnetization reversal were explained within the phenomenological model that involves high-order exchange anisotropy and misalignment of the easy axes of the antiferromagnetic and ferromagnetic layers. It has been shown that the film can exist in one of three equilibrium magnetic states in the field applied along the easy axis. The transitions between these states occur as first-order phase transitions. The observed hysteresis loop asymmetry is related to the existence of the metastable state.     

Magnetization of ballistic quantum dots induced by a linear-polarized microwave field

On a basis of extensive analytical and numerical studies we show that a linear-polarized microwave field creates a stationary magnetization in mesoscopic ballistic quantum dots with two-dimensional electron gas being at a thermal equilibrium. The magnetization is proportional to a number of electrons in a dot and to a microwave power. Microwave fields of moderate strength create in a one dot of few micron size a magnetization which is by few orders of magnitude larger than a magnetization produced by persistent currents. The effect is weakly dependent on temperature and can be observed with existing experimental techniques. The parallels between this effect and ratchets in asymmetric nanostructures are also discussed.     

Magnetization reversal in exchange biased Co/CoO patterns

The influence of patterning on exchange bias has been investigated using arrays of micron-sized Co/CoO dots with different lateral confinement and length-to-width ratio. The patterned samples show higher coercive and exchange bias fields than a continuous Co/CoO bilayer. As in unpatterned film, magnetization reversal mechanisms on opposite sides of the hysteresis loops of the microstructured samples are different. However, with the increase of lateral confinement and shape anisotropy of the dots, the asymmetry in the magnetization reversal starts to differ from that observed in continuous Co/CoO films.     

Enhanced asymmetric magnetization reversal in nanoscale Co/CoO arrays: competition between exchange bias and magnetostatic coupling

Magnetization reversal was studied in square arrays of square Co/CoO dots with lateral size varying between 200 and 900 nm. While reference nonpatterned Co/CoO films show the typical shift and increased width of the hysteresis loop due to exchange bias, the patterned samples reveal a pronounced size dependence. In particular, an anomaly appears in the upper branch of the magnetization cycle and becomes stronger as the dot size decreases. This anomaly, which is absent at room temperature in the patterned samples, can be understood in terms of a competition between magnetostatic interdot interaction and exchange anisotropy during the magnetic switching process.     

Magnetic properties of hexagonal ferrite dot arrays

Patterned magnetic media have been considered as one of the promising candidates for future ultra-high-density magnetic recording. In this paper, a new kind of patterned medium based on hexagonal ferrite have been studied. We have successfully fabricated strontium ferrite dot arrays by electron beam lithography. Their magnetic properties are evaluated by magnetic force microscopy (MFM) and superconducting quantum interference device (SQUID). The results show the dot arrays have perpendicular anisotropy. Dots with the lateral size larger than 500 nm show multidomain magnetization configuration in the initial magnetization state. However, with dot size decreased to 500 nm, all the dots have single-domain configuration both in the initial magnetization state and remanent magnetization state.     

Micromagnetic properties and magnetization switching of single domain Co dots studied by magnetic force microscopy

Magnetic force microscopy was applied to study the magnetic properties of Co dot microstructures. The high density magnetic dot arrays were fabricated using nanolithographic techniques on GaAs substrates. The ferromagnetic Co dots were found to be in a single domain state for Co film thicknesses of 7 nm and 17 nm. The magnetization of the as-prepared Co dot array was found to be in a non-uniform state. After applying a magnetic field the Co dots are in a uniform magnetization state. Induced switching of the magnetization of single Co dots by the stray field of the probing tip using an additionally applied in-situ magnetic field has been demonstrated.     

Magnetization anisotropy of Ni dots with several tens of nanometer diameter

We have studied the magnetization of Ni dot with 50 to 70 nanometer diameter and 12 nanometer thickness using a magnetic force microscopy with an in-plane magnetic field. The Ni dots were prepared using self-assembled dot patterns with poly (styrene-b-methyl mathacrylate) diblock copolymers on Ni film and ion etching. It was found that the remanent magnetization direction of the dot was perpendicular to the plane as prepared. From the vibrating sample magnetometer measurement, a hysteresis loop was found in the perpendicular magnetization. When an in-plane external magnetic field was applied, the magnetization was rotated into a horizontal direction with low coercivity along the field direction.     

Magnetization reversal in granular thin films

The paper discusses the physics of magnetization reversal in granular magnetic films. It gives an overview of the key physical properties that determine the collective and macroscopically observable magnetization reversal behavior. In particular, the multitude of observable hysteresis loops is reduced to three key physical quantities, namely the single grain switching field distribution D(h_s), the inter-granular exchange coupling constant J_ex, and the magnetostatic interaction constant J_ms. By varying the relative influence of these quantities, many different shapes of hysteresis loops can occur, which is documented by experimental examples. The regime of partially and strongly correlated reversal is discussed in detail, and minor loop measurements are presented that show scaling behavior for strongly correlated magnetization reversal in the vicinity of hysteresis loop criticality.     

Field evolution of tilted vortex cores in exchange-biased ferromagnetic dots

We developed an analytical model for the magnetization reversal via vortex nucleation and annihilation in double-layer ferromagnetic/antiferromagnetic cylindrical dots. The coupling of the ferromagnet to the antiferromagnet is modeled by means of an interfacial exchange field. The nonuniformity of the magnetization reversal mode perpendicular to the layers is explicitly included and results in a tilted vortex core (tilted Bloch line). The vortex core tilt results in an asymmetry of the nucleation and annihilation fields, which are calculated as a function of the dot geometry.     

Spin-injection mechanism of magnetization reversal and hysteresis of current in magnetic junctions

A novel mechanism is proposed for magnetization reversal by the current of magnetic junctions with two metallic ferromagnetic layers and thin separating nonmagnetic layer. The spin-polarized current flows perpendicularly to the interfaces between the ferromagnetic layers, in one of which the spins are pinned and in the other they are free. No domain structure is formed in the ferromagnetic layers. The current breaks spin equilibrium in the free layer, which manifests itself in the injection or extraction of spins. The nonequilibrium spins interact with the magnetization of the lattice due to the effective field of s-d exchange, which is current dependent. At currents exceeding a certain threshold value, this interaction leads to magnetization reversal. Two threshold currents for magnetization reversal have been obtained theoretically, which are reached as the current increases or decreases, respectively. Thus, the phenomenon of current hysteresis is found. The calculated results are in good agreement with experiments on magnetization reversal by current in three-layer junctions of composition Co(I)/Cu/Co(II) prepared in a pillar form.     

Magnetization reversal via bloch points nucleation in nanowires and dots: a micromagnetic study

Micromagnetic studies of the reversal of stripe domains in elements of different geometries are reported. Various 2D and 3D codes are used in order to allow comparison between an infinite slab, nanowires and dots. Starting from a saturated state the establishment of stripe domains through the sample is first studied. Contrary to the thin film case, the nucleation of this pattern is not uniform and is very different to the geometry of a wire or an isolated dot. Special attention is paid to the reversal of the core of the vortex (the remnants of inner walls between up and down domains) which requires the insertion of point singularities called Bloch points (BP) either at surfaces or created in a pair depending on the length allowed for the stripe in the corresponding element. The magnetization distribution around the core of the various BP is described in detail as well as the key characteristics of their motion. Finally, some experiments are suggested predicting the behaviour of stripe domains under an applied field.     

Angular-dependent remanent magnetization curve for perpendicular magnetic recording media determined by precise polar-Kerr detection system

We developed the polar-Kerr detection system and evaluated the angular dependence of magnetization curves with applied field of various directions during the newly developed system. The polar-Kerr detection system enabled precise evaluation of angular dependence of remanent coercivity (H_cr), as compared with the conventional VSM system. In addition, a cusp appeared in polar-Kerr hysteresis loop was observed to originate magnetization reversal by the thermal agitation.     

Magnetization reversal in submicron disks: exchange biased vortices

Submicron, circular, ferromagnetic-antiferromagnetic dots exhibit different magnetization reversal mechanisms depending on the direction of the magnetic applied field. Shifted, constricted hysteresis loops, typical for vortex formation, are observed for fields along the exchange bias direction. However, for fields applied close to perpendicular to the exchange bias direction, magnetization reversal occurs via coherent rotation. Magnetic force microscopy imaging together with micromagnetic simulations are used to further clarify the different magnetic switching behaviors.     

Effect of illumination on magnetization and microwave absorption of La1−xCaxMnO3 (x<0.2) films

Light-induced changes of the hysteresis loops of magnetization and microwave absorption are investigated in low-doped La_1−xCa_xMnO₃ (x<0.2) thin films. The width of the hysteresis loops decreases clearly under illumination with visible or near-infrared light at temperatures below 50 K. The microwave conductivity has a minimum value at magnetic fields corresponding to the magnetization reversal and is shifted towards weaker fields under illumination. These effects show complex nonexponential time evolution and dependence on strength of the magnetic field. The results can be explained by assuming that small ferromagnetic metallic regions exist within the insulating ferromagnetic phase of the sample, and that these regions are expanded by optically induced charge transfer between Jahn–Teller split e_g states of neighboring Mn³⁺ ions. Decrease of the Mn³⁺ XPS core level spectrum is observed in the samples under illumination with a HeNe laser.     

Magnetic layer thickness dependence of magnetization reversal in electrodeposited CoNi/Cu multilayer nanowires

The magnetization reversal of electrodeposited CoNi/Cu multilayer nanowires patterned in an array using a hole template has been investigated. The reversal mode is found to depend on the CoNi layer thickness t(CoNi); with increasing t(CoNi) a transition occurs from coherent rotation to a combination of coherent and incoherent rotation at around t(CoNi)=51 nm. The reversal mode has been identified using the magnetic hysteresis loops measured at room temperature for CoNi/Cu nanowires placed at various angles between the directions of the nanowire axis and external fields using a vibrating sample magnetometer. The nanowire samples have a diameter of ∼250 nm and constant Cu layer thickness of 4.2 nm with various t(CoNi) ranging from 6.8 nm to 7.5 μm. With increasing t(CoNi), the magnetic easy axis moves from the direction perpendicular to nanowires to that parallel to the nanowires at around t(CoNi)=51 nm, indicating a change in the magnetization reversal mode. The reversal mode for the nanowires with thin disk-shaped CoNi layers (t(CoNi)=6.8, 12 and 17 nm) is of a coherent rotation type, while that for long rod-shaped CoNi layers (t(CoNi)=150 nm, 1.0, 2.5 and 7.5 μm) can be consistently explained by a combination of coherent rotation and a curling mode. The effects of dipole–dipole interactions between nanowires and between adjacent magnetic layers in each nanowire on the reversal process have been discussed.     

Reversing the training effect in exchange biased CoO/Co bilayers

We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) display an asymmetry in the first magnetization reversal process and training in the subsequent reversal processes. Surprisingly, the AMR measurements as well as magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in-plane external field perpendicular to the cooling field. Indeed, the next hysteresis loop obtained in a field parallel to the cooling field resembles the initial asymmetric hysteresis loop, but with a reduced amount of spin rotation occurring at the first coercive field. This implies that the antiferromagnetic domains, which are created during the first reversal after cooling, can be partially erased.     

Asymmetric magnetization reversal in exchange-biased hysteresis loops

Polarized neutron reflectometry is used to probe the in-plane projection of the net-magnetization vector M--> of polycrystalline Fe films exchange coupled to twinned (110) MnF (2) or FeF (2) antiferromagnetic (AF) layers. The magnetization reversal mechanism depends upon the orientation of the cooling field with respect to the twinned microstructure of the AF, and whether the applied field is increased to (or decreased from) a positive saturating field; i.e. , the magnetization reversal is asymmetric. The reversal of the sample magnetization from one saturated state to the other occurs via either domain wall motion or magnetization rotation on opposite sides of the same hysteresis loop.     

Stochastic simulation of thermally assisted magnetization reversal in sub-100 nm dots with perpendicular anisotropy

Thermally assisted magnetization reversal of sub-100 nm dots with perpendicular anisotropy has been investigated using a micromagnetic Langevin model. The performance of the two different reversal modes of (i) a reduced barrier writing scheme and (ii) a Curie point writing scheme are compared. For the reduced barrier writing scheme, the switching field H_swt decreases with an increase in writing temperature but is still larger than that of the Curie point writing scheme. For the Curie point writing scheme, the required threshold field H_th, evaluated from 50 simulation results, saturates at a value, which is not simply related to the energy barrier height. The value of H_th increases with a decrease in cooling time owing to the dynamic aspects of the magnetic ordering process. Dependence of H_th on material parameters and dot sizes has been systematically studied.