Magnetotransport properties of (La0.7Pb0.3MnO3)1−xAgx composites

Magnetic and transport properties of (La_0.7Pb_0.3MnO₃)_1−xAg_x composites are explored in this study. Ferromagnetism is gradually attenuated due to the magnetic dilution with increase of Ag content percentage. Clearly irreversible behavior in the zero-field cooling and field cooling curves at a low field caused by the competition between the magnetization and magnetic domain orientation processes has been observed as x increases. Saturation magnetization decreases as x increases, while ferromagnetic transition temperature remains around 346 K for all composites. The resistivity decreases significantly for (La_0.7Pb_0.3MnO₃)_1−xAg_x composites. It is suggested that introduction of Ag into the niche of grain boundaries forms artificial conducting network and improves the carriers to transport. However, enhancement of magnetoresistance has been observed for the system.     

Effect of indium incorporation in Zn1−xCoxO thin films

In the present paper, the preliminary investigations of a series of ZnO thin films co-doped with indium and cobalt with an objective to elucidate the correlation, if any, between the carrier concentration and the induced room temperature ferromagnetism (RTFM), are presented. The single-phasic (Zn_99.5In_0.5)_1−xCo_xO thin films are deposited by spray pyrolysis. The substitution of Zn²⁺ by Co²⁺ has been established by optical transmission analysis of these films. The films are ferromagnetic at room temperature; and the magnetization has higher value for indium and cobalt co-doped thin film as compared with Zn0₉₀Co_0.1O thin film (having no indium).     

Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition

Amorphous Ge_1−xCr_x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10⁻³–0.96×10² Ω cm at 300 K, and decrease with Cr concentration. The Ge_1−xCr_x thin films are p-type. The hole concentrations are 5×10¹⁶–7×10²¹ cm⁻³ at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm³ at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge_1−xCr_x thin films are paramagnetic.     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Magnetic behavior of MnAs precipitates in Ga1−xMnxAs diluted magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x≈4.7–5.5%) were grown on (1 0 0) GaAs substrates by molecular beam epitaxy. These p-type (Ga,Mn)As films were revealed to have a ferromagnetic structure and ferromagnetism is observed up to a Curie temperature of 318 K, which is ascribed to the presence of MnAs secondary magnetic phases within the film. It is highly likely that the phase segregation occurs due to the high Mn cell temperature around 890–920 °C, as it is well established that GaMnAs is unstable at such a high temperature. The MnAs precipitate in the samples with x≈4.7–5.5% has a Curie temperature T_c≈318 K, which was characterized from field-cooled and zero-field-cooled magnetization curves.     

Magnetic behavior of the II-V-diluted magnetic semiconductor Cd1−xMnxSb

Polycrystalline samples of the II-V-diluted magnetic semiconductor Cd_1−xMn_xSb (x=0.05-0.20) were synthesized. Standard high temperature ceramic methods under an inert atmosphere were utilized for sample fabrication. Structural characterization was done using X-ray diffractometry (XRD), which indicated that a simple substitution of Mn for Cd is probably not occurring. Hysteresis, ac susceptibility, dc magnetization, and spontaneous magnetization measurements were performed for Cd_0.90Mn_0.10Sb. The hysteresis data indicated the presence of a ferromagnetic component. Ferromagnetism in the Cd_0.90Mn_0.10Sb system is likely due to two sources: Mn spins in small Mn-rich regions and a small amount of MnSb in a minority phase. Analysis of the spontaneous magnetization as a function of temperature for Cd_0.90Mn_0.10Sb yielded the value 0.172 for the critical exponent β. In MnSb, β was found to have the value 0.379, which is close to the theoretical value for 3D-Heisenberg systems. Thus, in Cd_0.90Mn_0.10Sb, the ferromagnetism is not of the 3D-Heisenberg type; rather, it is closer to 2D Ising behavior, indicating reduced effective dimensionality.     

Inter-network magnetic interactions in GdMexMn1−xO3 perovskites (Me=transition metal)

The gadolinium-based manganite GdMnO₃ of perovskite structure has been partially substituted at the manganese site by transition metal elements Me like Cu, Ni and Co, leading to a general formula GdMe_xMn_1−xO₃, in which different magnetic entities (e.g., Gd³⁺, Cu²⁺, Ni²⁺, Co²⁺, Co³⁺, Mn³⁺, Mn⁴⁺) can coexist, depending on charge equilibrium conditions. For divalent cations such as Cu²⁺ and Ni²⁺, the solid solution extends from x  (Me)=0–0.5, with O-type orthorhombic symmetry (a<c/√2<b)$\left(a<c/\surd 2<b\right)$. When the substituting element is cobalt, the solid solution extends over the whole range [0?x  ?1], changing from O′-type symmetry (c/√2<a<b)$\left(c/\surd 2<a<b\right)$ to O-type for x>0.5. In this latter case, the synthesis is performed under oxygen flow, which allows the cobalt ion to take a 3+ oxidation state.     

Magnetic and electrical properties of new magnetic phase in Si1−xMnx crystals

We have investigated the magnetic and electrical transport properties of Si_1−xMn_x single crystals grown by the vertical Bridgman method. The alloys with Mn concentrations up to x=0.64 have weak ferromagnetic ordering around T_C∼30 K. However, Si_0.25Mn_0.75 alloys show weak ferromagnetic ordering at 70 K and antiferromagnetic ordering at 104 K, which is confirmed by magnetization and electrical transport studies.     

Determination of Curie temperature by Arrott plot technique in Gd5(SixGe1−x)4 for x>0.575

Determination of Curie temperature by plotting magnetic moment vs. temperature curves requires a small applied field, which influences the measurement and temporarily disturbs the temperature of the sample especially for highly magnetocaloric materials. The Arrott plot technique was therefore used in order to determine the Curie temperature for a magnetocaloric Gd₅Si_2.7Ge_1.3 (x=0.675) single crystal sample. This technique was compared with other methods such as the inflection point technique and the line projection method. The results show how applied magnetic field influences the determination of Curie temperature. Using the Arrott plot the second-order transition Curie temperature for Gd₅Si_2.7Ge_1.3 was determined to be 304 K.     

Growth and magnetism in amorphous Si1−xMnx thin films grown by thermal deposition

Si_1−xMn_x   (x?0.22$x?0.22$) thin films were grown by using a thermal evaporator, and their magnetic and electrical properties were investigated. The Si_1−xMn_x semiconductors are amorphous when Mn concentration is 9.0 at% and less. The electrical resistivities of amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are in the range of 9.86–6.59×10⁻⁴ Ω cm at room temperature and decrease with increasing Mn concentration. The amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are p-type and hole densities are 3.73×10¹⁸–1.33×10²² cm⁻³ at room temperature. Low temperature magnetization characteristics reveal that amorphous Si_1−xMn_x   (x?0.09$x?0.09$) semiconductor thin films are paramagnetic.     

Dilute magnetic semiconductors based on wide bandgap SiO2 with and without transition metal elements

Material designs based on the first principle calculations of electronic structures are proposed for α-quartz SiO₂-based dilute magnetic semiconductors. The incorporation of transition metals (TMs) into Si sites and of the non-TM atoms into O sites are treated for various concentrations. At temperatures higher than room temperature, most of the TM-doped SiO₂ have no magnetism, yet Si_1−xMn_xO₂ might achieve the ferromagnetism. The substitution of O by non-TM atoms as C or N also induces the magnetism in the host. However, while the N's substitution induces the ferromagnetism, C's substitution causes an anti-ferromagnetic behavior in the host material SiO₂.     

Magnetic entropy-change in La0.67−xBixCa0.33MnO3 compound

Bi doped lanthanum manganites with the chemical composition of La_0.67−xBi_xCa_0.33MnO₃ (x=0$x=0$, 0.05, 0.1, 0.2) were prepared by the standard solid-state process. The Curie temperatures were measured to be 267 K for x=0$x=0$, 248 K for x=0.05$x=0.05$, 244 K for x=0.1$x=0.1$ and 229 K for x=0.2$x=0.2$ samples. It was found that the maximum value of the magnetic entropy change ∣ΔS_m∣ has reached the highest value of 6.08 J/kg K at 3 T for the composition with x=0.05$x=0.05$. Nearly the same maximum entropy change was observed for the x=0$x=0$ sample. A large decrease in the magnitude of the entropy change was observed for the x=0.2$x=0.2$ sample.     

Microstructure characterization and magnetic behavior of NiAlxFe2−xO4 and Ni1−yMnyAl0.2Fe1.8O4 ferrites

NiAl_xFe_2−xO₄ and Ni_1−yMn_yAl_0.2Fe_1.8O₄ ferrites were prepared by the conventional ceramic method and were characterized by X-ray diffraction, scanning electron microscopy, and magnetic measurements. The single spinel phase was confirmed for all prepared samples. A proper explanation of data is possible if the Al³⁺ ions are assumed to replace Fe³⁺ ions in the A and B sites simultaneously for NiAl_xFe_2−xO₄ ferrites, and if the Mn²⁺ ions are assumed to replace Ni²⁺ ions in the B sites for Ni_1−yMn_yAl_0.2Fe_1.8O₄ ferrites. Microstructural factors play an important role in the magnetic behavior of Ni_1−yMn_yAl_0.2Fe_1.8O₄ ferrites with large Mn²⁺ content.     

Structure and magnetic phase diagram of mixed rare-earth Nd1−xTbxFe10.5Mo1.5 compounds

The structural and magnetic properties of Nd_1−xTb_xFe_10.5Mo_1.5 (x=0$x=0$, 0.2, 0.4, 0.6, 0.8, 1.0) compounds have been investigated by means of X-ray diffraction and magnetic measurements. All the investigated compounds crystallize in the tetragonal ThMn₁₂-type structure with I4/mmm space group. The lattice parameters a, c and the unit-cell volume V decrease with increasing x. The Curie temperatures T_C are almost independent x. There exists a unique spin-reorientation transition for the end compositions of Nd_1−xTb_xFe_10.5Mo_1.5 compounds with x=0$x=0$ and x=1$x=1$, while two spin-reorientation transitions are observed for x=0.2–0.8$x=0.2–0.8$. The room-temperature magnetocrystalline anisotropy of Nd_1−xTb_xFe_10.5Mo_1.5 compounds changes from uniaxial to planar with increasing x content. Based on magnetic measurements, a magnetic phase diagram of Nd_1−xTb_xFe_10.5Mo_1.5 compounds is constructed. By minimizing the magnetocrystalline anisotropy energy, a theoretical magnetic phase diagram for the Nd_1−xTb_xFe_10.5Mo_1.5 system is derived, showing a reasonable agreement with the observations.     

Structural and magnetic properties of SmCo7−xMox alloys

Phase structure and magnetic properties of the as-cast and as-milled/annealed SmCo_7−xMo_x (x=0, 0.1, 0.2, 0.3, 0.4) alloys have been systematically studied. It is found that all the as-cast series alloys are composed of the CaCu₅-type and Th₂Zn₁₇-type phases. Saturation magnetization of the samples decreases with the Mo content increasing. Intrinsic coercivities (_iH_c) of no more than 0.06 T are observed in these as-cast samples, due to their rather coarse grain microstructures with an average grain size of 50 μm. The as-milled/annealed SmCo_7−xMo_x powders crystallize in the disordered TbCu₇-type (1:7) structure with very fine nanograins, and a minor Co₃Mo phase appears in the samples with x=0.1-0.4. High _iH_c (?0.95 T) are achieved in these samples, with a maximum of 1.26 T located at x=0.2, which can be primarily attributed to strong pinning of the domain wall motion at the nanograin boundaries. The temperature coefficient (β) of the _iH_c is about −0.22%/°C in the temperature range of 25-400 °C for the as-milled/annealed samples.     

Study of magnetic properties of Mn1−xCuxCr2S4 by: High-temperature series expansions

The high-temperature series expansions method applied in the systems Mn_1−xCu_xCr₂S₄ in the range 0?x?1. The exchange interactions and the magnetic exchange energies are calculated by using the probability law. The high-temperature series expansions have been applied in the spinel Mn_1−xCu_xCr₂S₄ systems, combined with the Padé approximants method, to determine the magnetic phase diagram, i.e. T_C versus dilution x. The critical exponent associated with the magnetic susceptibility (γ) is deduced. The obtained value of γ is insensitive to the dilution ratio x and may be compared with other theoretical results based on 3D Heisenberg model.     

Magnetic structure and phase diagram of the frustrated spinel Cd1−xZnxCr2Se4

In attempt to characterise the magnetic ordering in the whole composition range of the Cd_1−xZn_xCr₂Se₄ system, various magnetic measurements were performed on both crystalline and polycrystalline samples with 0?x?1. The magnetic properties of the system are typical of a ferromagnet below x=0.4 and of a complex antiferromagnet one above x=0.6. In this work the intermediate region was carefully studied. The variations of both M(T) and χ_ac at low fields suggest that transitions from ferromagnetic to Gabay–Toulouse ferromagnetic-spin-glass mixed phase at low temperature occur in the range 0.41?x?0.58. The high-temperature susceptibility measurements show that for the whole concentration range the system obeys Curie–Weiss laws. The results can be explained by the coexistence of competing interactions (ferromagnetic between nearest neighbours and antiferromagnetic between higher order neighbours) and disorder due to the random substitution between zinc and cadmium ions in the tetrahedral sites of the spinel lattice. An experimental magnetic phase diagram of the system is established.     

Local chemical distribution and electronic structure of Ge1−xTx DMS single crystals (T=Cr,Mn, Fe)

The spatial concentration distribution and local electronic structure of ferromagnetic Ge_1−xT_x (T=Cr, Mn, Fe) DMS single crystals have been investigated by using scanning photoelectron microscopy (SPEM), X-ray absorption spectroscopy (XAS), and photoemission spectroscopy (PES). It is found that doped T ions in Ge_1−xT_x crystals are chemically phase-separated, suggesting that the observed ferromagnetism arises from the phase-separated T-rich phases in Ge_1−xT_x.