Immobilization of glucose oxidase using CoFe2O4/SiO2 nanoparticles as carrier

Aminated-CoFe₂O₄/SiO₂ magnetic nanoparticles (NPs) were prepared from primary silica particles using modified StÖber method. Glucose oxidase (GOD) was immobilized on CoFe₂O₄/SiO₂ NPs via cross-linking with glutaraldehyde (GA). The optimal immobilization condition was achieved with 1% (v/v) GA, cross-linking time of 3 h, solution pH of 7.0 and 0.4 mg GOD (in 3.0 mg carrier). The immobilized GOD showed maximal catalytic activity at pH 6.5 and 40 °C. After immobilization, the GOD exhibited improved thermal, storage and operation stability. The immobilized GOD still maintained 80% of its initial activity after the incubation at 50 °C for 25 min, whereas free enzyme had only 20% of initial activity after the same incubation. After kept at 4 °C for 28 days, the immobilized and free enzyme retained 87% and 40% of initial activity, respectively. The immobilized GOD maintained approximately 57% of initial activity after reused 7 times. The K_M (Michaelis-Menten constant) values for immobilized GOD and free GOD were 14.6 mM and 27.1 mM, respectively.     

Enhancement of chaotic carrier bandwidth in laser diode transmitter utilizing external light injection

Semiconductor laser with optical feedback emitting chaotic optical signal can be treated as chaotic carrier transmitter. Based on laser rate equations, we numerically study the effect of external injection light on the bandwidth of chaotic carrier transmitter. Our numerical simulation shows that the bandwidth of the chaotic carrier transmitter can be enhanced significantly by external photons injection. Compared with the 2 GHz relaxation oscillation frequency of a solitary laser diode without optical injection, the bandwidth of a chaotic carrier transmitter is expanded to 14.5 GHz with injection parameter at k_inj = 0.39. Simulation results also demonstrate that the enhanced bandwidth depends obviously on the frequency detuning between the external injection laser diode and the chaotic carrier transmitter. The maximum bandwidth of the chaotic transmitter can be obtained when the frequency of the injected light is higher than the central frequency of the carrier transmitter between 2 GHz and 4 GHz.     

Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

Al-doped ZnO (AZO, ZnO:Al₂O₃ = 98:2 wt%) films are deposited on different substrates by an RF magnetron sputtering and subsequently annealed at three different conditions to investigate the microstructural, electrical, and optical properties. X-ray diffraction and scanning electron microscope results show that all the samples are polycrystalline and the samples rapid-thermal-annealed at 900 °C in an N₂ ambient contain larger grains compared to the furnace-annealed samples. It is shown that the sample deposited at room temperature on the sapphire gives a resistivity of 5.57 × 10⁻⁴ Ω cm when furnace-annealed at 500 °C in a mixture of N₂:H₂ (9:1). It is also shown that the Hall mobility vs. carrier concentration (μ-n) relation is divided into two groups, depending on the annealing conditions, namely, either rapid-thermal annealing or furnace annealing. The relations are described in terms of either grain boundary scattering or ionized impurity scattering mechanism. In addition, the samples produce fairly high transmittance of 91-96.99% across the wavelength region of 400-1100 nm. The optical bandgaps of the samples increase with increasing carrier concentration.     

Spray pyrolysis deposition of YSZ and YSZ-Pt composite films

In the present paper procedures are described for spray pyrolysis deposition of YSZ films (0.1-30 μm in thickness) with 8 or 15 mole % of YO_1.5 on different substrates. Aqueous or ethylene glycol solutions of Y-Zr-citrates were used as starting material and O₂ as carrier gas. The crystal structure and the morphology of the films were studied.The optimal deposition and post-deposition annealing conditions were defined, taking into account the desired film thickness and characteristics. Substrate temperatures of 250 °C during the deposition followed by heating for 10 min to 400 °C after every spraying and to 590 °C after every three sprayings with final annealing at 590 °C for 2 h in static air atmosphere were found to be suitable for the production of dense, uniform and cracks-free films.     

Electrical and optical properties of ZnO films prepared by sputtering of ZnO targets containing AlN

ZnO films prepared from the ZnO target containing 2% AlN are transparent irrespective of radio frequency (RF) power. The obtained ZnO films have the carrier density of 3.8 × 10²⁰ cm⁻³ or less and the low mobility of 5.3-7.8 cm²/(V s). In the case of 5% AlN target, ZnO films prepared at 40, 60 and 80 W are transparent, whereas ZnO films prepared at 100 and 120 W are colored. As RF power increases from 40 to 120 W, the carrier density increases straightforwardly up to 5.5 × 10²⁰ cm⁻³ at 100 W and is oppositely reduced to 3.2 × 10²⁰ cm⁻³ at 120 W. In the case of 10% AlN target, ZnO films prepared at 60 W or more are colored, and have the carrier density of 4 × 10²⁰ cm⁻³ or less. The N-concentration in these colored films is estimated to be 1% or less. The Al-concentration in the ZnO films prepared from the 5 and 10% AlN targets is higher than 2%. The carrier density of the ZnO films containing Al and N atoms is nearly equal to that of ZnO films doped with Al atoms alone. There is no evidence in supporting the enhancement of the carrier density via the formation of N-Al_xZn_4−x clusters (4 ≥ x ≥ 2).     

Structure and transport mechanisms of Si/porous Si n-p junctions prepared by liquid phase epitaxy

Heterojunction devices of n-Si/p-PSi were fabricated by growing n-Si films onto p-type porous Si substrates by liquid phase epitaxy. The structure of the grown films was checked using scanning electron microscopy and X-ray diffraction spectroscopy. X-ray diffraction measurements showed that the grown films have monocrystalline structure oriented along (1 1 1) direction with mainly cubic phase. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured over the temperature range from 298 to 398 K. The analysis of the dark I-V characteristics of n-Si/p-PSi at several temperatures is done to elucidate the conduction mechanisms and the evaluation of the heterojunction parameters is presented. Two carrier transport mechanisms are believed to be at the origin of the forward current. At low bias voltage (V ≤ 0.4 V) the forward current is dominated by the recombination at the porous silicon side of the space charge region. In the 0.5 V ≤ V ≤ 1.4 V region, the current transport is due to the space charge—limited current mechanism dominated by a single trapping level of energy 0.41 eV. The reverse current is considered to be mainly generated in the depletion region of the porous silicon. The capacitance-voltage results confirm an abrupt junction with a homogenous distribution of the impurities inside the space charge region. Information on the depletion region, built-in voltage and net carrier concentration were obtained from the dark C-V characteristics.     

Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy

In this study deep level transient spectroscopy has been performed on boron–nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N_A–N_D)∼3×10¹⁷ cm⁻³. We observed a hole H₁ majority carrier and an electron E₁ minority carrier traps in the device having activation energies E_v+0.24 eV, E_c −0.41 eV, respectively. The capture cross-section and trap concentration of H₁ and E₁ levels were found to be (5×10⁻¹⁹ cm², 2×10¹⁵ cm⁻³) and (1.6×10⁻¹⁶ cm², 3×10¹⁵ cm⁻³), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H₁ defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E₁ defect to a nitrogen donor.     

Immobilized protease on the magnetic nanoparticles used for the hydrolysis of rapeseed meals

(3-aminopropl) triethoxysilaneand modified magnetic nanoparticles with the average diameter of 25.4 nm were synthesized in water-phase co-precipitation method. And then these nanoparticles were covalently coupled with alkaline protease as enzyme carrier by using 1,4-phenylene diisothlocyanate as coupling agent. Experiments showed that the immobilized protease can keep the catalytic bioactivity, which can reach to 47.8% when casein was served as substrate. Results showed that the catalytic activity of immobilized protease on these magnetic nanoparticles could retain 98.63±2.37% after 60 days. And it is more stable than the free protease during the shelf-life test. The enzyme reaction conditions such as optimum reaction temperature and pH are the same as free protease. Furthermore, mix-and-separate experiments showed that the immobilized protease could be recycled through the magnetic nanoparticles after the biocatalysis process. When the rapeseed meals were used as substrate, the degree of hydrolysis of immobilized alkaline protease achieved 9.86%, while it was 10.41% for the free protease. The macromolecular proteins of rapeseed meals were hydrolyzed by immobilized protease into small molecules such as polypeptides or amino acids. Thus, a novel efficient and economic way for the recycling of enzymes in the application of continuous production of active peptides was provided based on these magnetic nanoparticles.     

Correlation between electrical and optical properties of Cr:ZnO thin films grown by pulsed laser deposition

Highly transparent and conducting Chromium doped ZnO (Cr:ZnO) thin films with preferential c-axis orientation were grown on (0 0 0 1) sapphire substrates using buffer assisted pulsed laser deposition. The resistivity of Cr:ZnO thin films was found to decrease to a minimum value of ∼1.13×10⁻³Ω cm with the increasing Cr concentration up to ∼1.9 at.% and then increase with further increase of Cr concentration. On the contrary, the band gap and carrier concentration of Cr:ZnO thin films increased up to ∼3.37 eV and ∼2×10²⁰ cm⁻³, respectively, with the increase of Cr concentration up to ∼1.9 at.%, then decreased with further increase of Cr concentration. The increase of carrier concentration and conductivity with Cr doping at low Cr concentrations (<1.9 at.%) could be attributed to the presence of Cr in +3 valence state in ZnO thus acting as donor while decrease of carrier concentration beyond ∼1.9 at.% of Cr concentration could be attributed to the charge compensating effect due to the presence of acceptor like point defects such as oxygen interstitials. This was experimentally confirmed using x-ray photoelectron spectroscopy. The observed variation in the band gap of Cr:ZnO thin films with increasing Cr doping was attributed to the competing effects of the high free carrier concentration induced Burstein-Moss blue shift and band gap narrowing.     

Fermi surface and metallic properties of graphite at high pressures

A potential of superconductivity of pure graphite has been theoretically examined. At normal pressure, the carrier concentration is too low to exhibit superconductivity. On applying pressure, the band dispersion along the c-axis is significantly enhanced, resulting in an increase in the carrier concentration; 10²⁰ cm^-3 at p=30 GPa. This is favorable to observe superconductivity. Accurate Fermi surfaces are illustrated: a new Fermi surface appears around K point at p=25 GPa.     

Growth and electrical properties of ZnO nanorod arrays prepared by chemical spray pyrolysis

Chemical spray pyrolysis was applied to grow ZnO nanorod arrays from zinc chloride solutions with pH=2 and 5 on glass/ITO substrate at 480 and 550 °C. The obtained structures were characterized by their morphological, electrical and PL properties. According to SEM, deposition of acidic solutions retards coalescence of the growing crystals. The charge carrier density in ZnO nanorods was determined from the C-V characteristics of ZnO/Hg Schottky barrier. Carrier densities ∼10¹⁵ cm⁻³ and slightly above 10¹⁶ cm⁻³ were recorded for ZnO deposited at 550 and 480 °C, respectively. According to PL studies, intense UV-emission is characteristic of ZnO independent of growth temperature, the concentration of oxygen vacancy related defects is lower in ZnO nanorods deposited at 550 °C. Solution pH has no influence on carrier density and PL properties.     

Control of mixed protonic and electronic conductivity by mixing rare-earth ortho-borates

In order to develop mixed protonic and electronic conductors, we proposed a novel concept for material design that enables to control partial conductivities by fabricating solid solutions of protonic and electronic conductors. In this work, Sr-doped LaBO₃ and Sr-doped CeBO₃ were chosen as model compounds conducting protons and electron holes, respectively. Solid solutions of the above borates, Sr-doped La_1 − xCe_xBO₃, were prepared, and their electrical conductivities were investigated in 8.5 × 10²-4.2 × 10³ Pa of p(H₂O) and 1.0 × 10-1.0 × 10⁵ Pa of p(H₂) at 1073 K. From the experimental results of the gas partial pressure dependences of the conductivities, major charge carrier species were identified as a function of x. It was found that proton was the major charge carrier when x < 0.2 while the contribution of the electron hole conduction became remarkable as x increased above 0.2. The contribution of the electron hole conduction can be interpreted by the percolation model.     

Preparation of non-oriented silicon steel with high magnetic induction using columnar grains

Columnar grains can lead to detrimental surface ridging and an inhomogeneous microstructure, although their {1 0 0}〈0 v w〉 texture is considered desirable due to their good magnetic properties in non-oriented silicon steel. Based on the hereditary tendency of {1 0 0}〈0 v w〉 texture, the effects of lubrication and heating rate on texture and on final magnetic properties were investigated using a cast slab containing 100% columnar grains. Hot rolling with lubrication, normalization at low heating rate, two-stage cold rolling, and final annealing at 1000 °C helped achieve high performance. As a result, a new non-oriented silicon steel with high magnetic induction (B₅₀=1.82 T) and low core loss (P_1.5=2.35 W/kg) was prepared. The possibility of further performance optimization was also discussed.     

Surface functionalization of chitosan-coated magnetic nanoparticles for covalent immobilization of yeast alcohol dehydrogenase from Saccharomyces cerevisiae

A novel and efficient immobilization of yeast alcohol dehydrogenase (YADH, EC1.1.1.1) from Saccharomyces cerevisiae has been developed by using the surface functionalization of chitosan-coated magnetic nanoparticles (Fe₃O₄/KCTS) as support. The magnetic Fe₃O₄/KCTS nanoparticles were prepared by binding chitosan alpha-ketoglutaric acid (KCTS) onto the surface of magnetic Fe₃O₄ nanoparticles. Later, covalent immobilization of YADH was attempted onto the Fe₃O₄/KCTS nanoparticles. The effect of various preparation conditions on the immobilized YADH process such as immobilization time, enzyme concentration and pH was investigated. The influence of pH and temperature on the activity of the free and immobilized YADH using phenylglyoxylic acid as substrate has also been studied. The optimum reaction temperature and pH value for the enzymatic conversion catalyzed by the immobilized YADH were 30 °C and 7.4, respectively. Compared to the free enzyme, the immobilized YADH retained 65% of its original activity and exhibited significant thermal stability and good durability.     

Optical characterization and determination of carrier density of ultrasonically sprayed CdS:Cu films

In this work, CdS and Cu doped CdS films (at the Cu percentages of 1, 3 and 5) have been deposited onto glass substrates at 350 ± 5 °C by ultrasonic spray pyrolysis technique and their application potential for photovoltaic solar cells have been investigated. Optical properties and thicknesses of the films have been investigated by spectroscopic ellipsometry (SE). Ellipsometric angle ψ was used as the source point for optical characterizations. The optical constants (n and k) and the thicknesses of the films have been fitted according to Cauchy model. Also, optical properties of the produced films have been analyzed by transmittance and reflectance spectra. Refractive index (n), extinction coefficient (k) and reflectance (R) spectra have been taken by spectroscopic ellipsometer, while transmittance spectra have been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap type and value of the films. Mott-Schottky (M-S) measurements have been made to determine the conductivity type and carrier concentration of the films. Samples showed n-type conductivity and carrier concentration of undoped CdS sample was found to be 1.19 × 10¹⁹ cm⁻³. Also, it was concluded that Cu doping has an acceptor effect in CdS samples. From the results of these investigations, the application potential of CdS:Cu films for photovoltaic solar cells as window layer was searched.     

Optimization of ultrasound assisted extraction of antioxidant compounds from marjoram (Origanum majorana L.) using response surface methodology

The present study optimized the ultrasound assisted extraction (UAE) conditions to maximize the antioxidant activity [Ferric ion Reducing Antioxidant Power (FRAP)], total phenol content (TP) and content of individual polyphenols of extracts from marjoram. Optimal conditions with regard to amplitude of sonication (24.4-61.0 μm) and extraction temperature (15-35 °C) and extraction time (5-15 min) were identified using response surface methodology (RSM). The results showed that the combined treatment conditions of 61 μm, 35 °C and 15 min were optimal for maximizing TP, FRAP, rosmarinic acid, luteolin-7-O-glucoside, apigenin-7-O-glucoside, caffeic acid, carnosic acid and carnosol values of the extracts. The predicted values from the developed quadratic polynomial equation were in close agreement with the actual experimental values with low average mean deviations (E%) ranging from 0.45% to 1.55%. The extraction yields of the optimal UAE were significantly (p < 0.05) higher than solid/liquid extracts. Predicted models were highly significant (p < 0.05) for all the parameters studied with high regression coefficients (R²) ranging from 0.58 to 0.989.     

Pockels effect of water in the electric double layer at the interface between water and transparent electrode

We have obtained the first experimental evidence for the Pockels effect of water, which is induced by a high electric field in the electric double layer (EDL) on the water-transparent electrode interface. The electric-field induced energy shift of the visible interference fringes of a 300 nm indium-tin-oxide (ITO) electrode layer is observed, indicating a negative refractive index change at the interface. Numerical calculation reproduces well the experimental observation, showing that the signal mainly originates from water in the EDL. The Pockels constants of water are estimated to be r₃₃ = 5.1 × 100 pm/V and r₁₃ = 1.7 × 100 pm/V. The large anisotropy of the Pockels effect of water is deduced from the incidence angle dependence of the p-polarization signal. At the same time, the ITO shows a blue shift of the band gap in the UV due to the band population effect in the space charge layer. The plasma frequency in the near IR is also expected to increase due to the band population effect, since the ITO has a high doped carrier population close to metal. A negative refractive index change in the ITO space charge layer is induced from both effects, but its effect on the signal is estimated to be much smaller than that of the negative refractive index change of water in the EDL.     

Microstructure and texture evolution of strip casting 3 wt% Si non-oriented silicon steel with columnar structure

An Fe-3 wt%Si strip with columnar structure and pronounced {0 0 1}〈0 v w〉 texture was produced using a twin-roll strip caster. Then the as-cast strip was cold-rolled and annealed. The microstructure and texture evolution along the processing steps was investigated. It is found that inhomogeneous microstructure is produced in both cold-rolled and final annealed samples due to the large initial grains. The cold rolling texture is dominated by pronounced a-fiber texture and relatively strong γ-fiber texture. The final recrystallization texture is characterized by {0 0 1}〈0 1 0〉, {0 0 1}〈2 1 0〉, {1 1 0}〈0 0 1〉 texture and a slightly shifted {1 1 1}〈1 1 2〉 component. The microstructural inhomogeneity plays an important role in the texture evolution.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

A study on electrical and mechanical properties of hybrid-polymer thin films by a controlled TEOS bubbling ratio

Organic-inorganic hybrid-polymer thin films were deposited on silicon(1 0 0) substrates at room temperature by PECVD (plasma enhanced chemical vapor deposition). Ethylcyclohexane and TEOS (tetraethoxysilane) were utilized as organic and inorganic precursors with hydrogen gas for the ethylcyclohexane bubbler and argon gas for both the TEOS bubbler and as a carrier gas. To compare the electrical and the mechanical properties of the plasma polymerized thin films, we grew the hybrid-polymer thin films under conditions of various TEOS bubbling ratios. MTS nano-indenter was used to measure the hardness and Young's modulus and showed that these values increased as the TEOS bubbling ratio increased, with the highest hardness at 0.8 GPa in this experiment. An impedance analyzer was utilized for the measurements of I-V curves and capacitance, showing the lowest dielectric constant at approximately 1.83, with a leakage current density of 10⁻⁸ A/cm² at 1 MV/cm, respectively.