Anomalous magnetization processes and non-symmetrical domain wall displacements in L10 FePt particulate films

Anomalous magnetization processes and non-symmetrical domain wall displacements in the minor loop of L1₀ FePt particulate films were investigated by magnetization measurements and in situ magnetic force microscopy. Magnetization (M) decreases dramatically on increasing the magnetic field to ∼3 kOe after which M becomes small and constant in the range of 5–20 kOe as observed in the successive measurement of minor loops. The domain wall displacement is non-symmetrical with respect to the field direction. The anomalous magnetization behavior was attributed to the non-symmetrical domain wall displacement and large magnetic field required for domain wall nucleation. Energy calculations from modeling suggest that non-symmetrical domain wall displacement is caused by the existence of metastable domains in which the domain edges are stuck to the particle boundaries.     

Investigation of the domain structure of sintered Nd-Fe-B permanent magnets by Bitter-pattern method

The conventional Bitter-pattern technique and the colloid-scanning electron microscopy (colloid-SEM) method were used to study the domain structure of polycrystalline sintered Nd-Fe-B permanent magnets. In the thermally demagnetized state most of the grains are multidomain and the domain structures resemble those observed in bulk uniaxial crystals with strong magnetocrystalline anisotropy. Investigations of the magnetic microstructure during magnetizing cycle showed that the domain walls can easily be moved within the grains and that the magnetization reversal in sintered Nd-Fe-B magnets occurs predominantly by the nucleation and expansion of reverse domains at structural imperfections near the grain boundaries. It is also shown that the colloid-SEM method is more surface sensitive and reveals the domain structure with better resolution than the conventional Bitter technique. Thanks to the application of digital image processing systems, clear and high contrast domain images were obtained. The work was supported by the Lódź University within Research Grant 505/694 (2004).     

Microstructure and magnetic properties of nanocomposite FePt/MgO and FePt/Ag films

An in-plane magnetic anisotropy of FePt film is obtained in the MgO 5 nm/FePt t nm/MgO 5 nm films (where t=5, 10 and 20 nm). Both the in-plane coercivity (H_c∥) and the perpendicular magnetic anisotropy of FePt films are increased when introducing an Ag-capped layer instead of MgO-capped layer. An in-plane coercivity is 3154 Oe for the MgO 5 nm/FePt 10 nm/MgO 5 nm film, and it can be increased to 4846 Oe as a 5 nm Ag-capped layer instead of MgO-capped layer. The transmission electron microscopy (TEM)-energy disperse spectrum (EDS) analysis shows that the Ag mainly distributed at the grain boundary of FePt, that leads the increase of the grain boundary energy, which will enhance coercivity and perpendicular magnetic anisotropy of FePt film.     

Fast domain wall dynamics in amorphous glass-coated microwires

Here we report on the domain wall dynamics in amorphous glass-coated FeCuNbSiB microwires measured in the temperature range from 77 up to 400 K. At low temperatures below 200 K, the domain wall velocity is proportional to the applied magnetic field. At temperatures above 200 K, two regions have been found: one with low domain wall mobility at low fields and another one with high domain wall mobility at high fields. The different regions of the domain wall dynamics are treated in terms of the change of the domain wall configuration from transversal to vortex one. Moreover, non-linear regime is shown at low fields at the temperature 373 K as a result of the domain wall interaction with the local defects.     

Magnetic domain wall creep in the presence of an effective interlayer coupling field

We investigate thermally activated domain wall creep in a system consisting of two ultrathin Co layers with perpendicular anisotropy coupled antiferromagnetically through a 4 nm thick Pt spacer layer. The field driven dynamics of domain walls in the softer Co layer have been measured while keeping the harder Co layer negatively saturated. The effect of the interlayer interaction on the soft layer is interpreted in terms of an effective coupling field, _HJ$H_J$, which results in an asymmetry between the domain wall speeds measured under positive and negative driving fields. We show that creep theory remains valid to describe the observed wall motion when the effective coupling field is included in the creep velocity law as a component of the total field acting on the wall. Using the resultant modified creep expression, we determine a value for the effective coupling field which is consistent with that measured from the shift of the soft layer's minor hysteresis loop. The net antiferromagnetic coupling is attributed to a combination of RKKY and orange-peel coupling.     

Exact solution of eddy current losses produced by a domain wall with nonzero thickness

The influence of the domain wall thickness on eddy current losses has been calculated. It is shown that, for samples with low magnetic anisotropy and small thickness, the reduction of magnetic losses with respect to the zero thickness domain wall must be seriously taken into account.     

Magneto resistance due to domain wall scattering and magneto size effect of thin Ni and Co films at low temperatures

Nickel and cobalt films illustrate alternative Bloch lines with cap switches. The strip magnetic domains become zigzag and bubbling cells for Ni and Co films, respectively, under an external field of 1.5 T. The magnetoresistances (MR) for currents parallel (CIW) to the domain walls is 15% less than those of the perpendicular (CPW) case. We also studied the magneto size effect by applying the magnetic field normal to the surface, from which the Sondheimer oscillation appears attributing to periodic striking of the surface for electrons traveling in circular motion on a plane canting to the surface. The experiments can be expressed by the magneto size effect inherited with very small specularity parameters.     

Magnetic properties and microstructure study of high coercivity Au/FePt/Au trilayer thin films

High-coercivity Au(60 nm)/FePt(δ nm)/Au(60 nm) trilayer samples were prepared by sputtering at room temperature, followed by post annealing at different temperatures. For the sample with δ=60 nm, L1₀ ordering transformation occurs at 500 °C. Coercivity (H_c) is increased with the annealing temperature in the studied range 400–800 °C. The H_c value of the trilayer films is also varied with thickness of FePt intermediate layer (δ), from 27 kOe for δ=60 nm to a maximum value of 33.5 kOe for δ=20 nm. X-ray diffraction data indicate that the diffusion of Au atoms into the FePt L1₀ lattice is negligible even after a high-temperature (800 °C) annealing process. Furthermore, ordering parameter is almost unchanged as δ is reduced from 60 to 15 nm. Transmission electron microscope (TEM) photos indicate that small FePt Ll₀ particles are dispersed amid the large-grained Au. We believe that the high coercivity of the trilayer sample is attributed to the small and uniform grain sizes of the highly ordered FePt particles which have perfect phase separation with Au matrix.     

The influence of glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwires

The effect of the glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwire has been studied by the switching field distribution technique. The thermoactivated mechanism model is used to describe the thermally activated switching through the complex energy barrier in amorphous FeSiB microwires. Glass removal leads to the increase of the probability of the thermally activated switching pointing to the decrease of the energy barrier.     

Magnetic force microscopy studies of domain walls in nickel and cobalt films

A magnetic force microscopy is used to examine the domain walls in nickel and cobalt films deposited by argon ion sputtering. Thin nickel films deposited at high substrate temperatures exhibit coexistent Bloch and Neel walls. Films grown at room temperature display alternative Bloch lines with cap switches. These films agglomerate to form grains after annealed at high temperatures. The film composed of larger grains behaves better nucleation implying magnetic domains of closure, while the film composed of smaller grains exhibits more defects implying alternative Bloch lines. We have also observed domain displacements and cap switches, which occur due to precipitation of particles in small grain size films. Stripe domains are observed for film thicknesses larger than 100 nm. They become zigzag cells when an external field of 1.5 T is applied perpendicular to the surface of the films. This experiment indicates that the domain sizes in thin films and the strip widths for thick films both depend on the square-root of the film thickness, which varies from 5 to 45 nm and from 100 to 450 nm, respectively.     

Simultaneous observation of atomic step and domain wall structure of ultrathin Co films by magnetic force microscopy in ultrahigh vacuum

We have applied magnetic force microscopy in ultrahigh vacuum to study the correlation between the atomic step and magnetic domain wall structure of ultrathin Co films prepared in situ on Au(111) substrates. For the first time we were able to achieve high-resolution images showing simultaneously a clear domain wall contrast and the underlying atomic step structure. Although for in-plane magnetized Co films the domain walls were found to run preferentially in a direction perpendicular to the steps, no such correlation could be observed for out-of-plane magnetized Co films. Received: 3 June 1999 / Accepted: 4 June 1999 / Published online: 29 July 1999     

Magnetic viscosity effects in epitaxial L10 FePt thin films and exchange spring Fe–FePt bilayers

We have studied the thermal stability of L1₀ FePt thin films and Fe–FePt exchange-spring (ES) bilayers grown on (1 0 0) MgO by RF sputtering. The viscosity curves showed both for FePt films and bilayers a clear logarithmic decay of magnetization. Moreover, it was possible to evaluate the viscosity coefficient S for different applied reverse fields and the activation volumes at the coercivity. The latter values were then related to structural, magnetic and morphological measurements performed on the samples.     

Control of crystallographic orientation in L10 FePt films by using Cr and CrW underlayers

The microstructure and magnetic properties of FePt films grown on Cr and CrW underlayers were investigated. The FePt films that deposited on Cr underlayer show (2 0 0) orientation and low coercivity because of the diffusion between FePt and Cr underlayer. The misfit between FePt magnetic layer and underlayer increases by small addition of W element in Cr underlayer or using a thin Mo intermediate layer, which is favorable for the formation of (0 0 1) orientation and the transformation of FePt from fcc to fct phase. A good FePt (0 0 1) texture was obtained in the films with Cr₈₅W₁₅ underlayer with substrate temperature of 400 °C. The FePt films deposited on Mo/Cr underlayer exhibit larger coercivity than that of the films grown on Pt/Cr₈₅W₁₅ because 5 nm Mo intermediate layer depressed the diffusion of Cr into magnetic layer.     

Structural and magnetoresistive properties of half metallic Co2Mn1−xSi thin films

Polycrystalline Co₂Mn_1−xSi (CMS) thin films with Mn-deficiency can grow on different types of substrates such as MgO (1 0 0) single crystal, α-sapphire (0 0 0 1) and Si coated with SiO₂ either by using V or Ta/Cu as the seed layer. The magnetic property, especially the coercivity of the CMS thin films strongly depends on the crystalline structure and microstructure of the CMS thin film, hence it is affected by the substrate and also the seed layer. Very soft CMS thin film with coercivity of about 20 Oe has been obtained when MgO (1 0 0) is used as the substrate. Magnetic tunnel junctions (with MR ratio of about 9%–18%) by utilizing the CMS as one of ferromagnetic electrodes have been successfully fabricated. The degradation of the magnetoresistive effect of the MTJ after magnetic annealing is attributed to the diffusion of the Mn-atoms into the tunnel barrier during the annealing process.     

Dependence of Interlayer AF Coupling on Ferromagnetic Layer Thickness in [Pt/Co]5/Ru/[Co/Pt]5 Multilayers

We study magnetization reversal in the interlayer coupled [Pt/Co]5/Ru/[Co/Pt]5 multilayers （MLs） by means of the measurement of extraordinary Hall effect （EHE）. Fitting experimental data to a simple model, we determine the interlayer coupling strength for various thicknesses of the ferromagnetic layers at a fixed Ru spacer thickness. It is found that the dependence of interlayer coupling strength on the Pt layer thickness is much stronger than the previous report in the ferromagnetic/nonmagnetic/ferromagnetic multilayers.     

The exchange bias and coercivity of FM/AFM films: Monte Carlo simulation

The exchange bias (H_E) and coercivity (H_C) of the ferromagnet/antiferromagnet (FM/AFM) films have been simulated with Monte Carlo method. The simulated results indicate that, the value of H_E decreases with increasing temperature, and the values of H_E and the blocking temperature T_b at which H_E=0 reduce evidently with decreasing absolute value of interlayer exchange coupling JI. It also is found that for the large absolute values of JI, the maximum in H_C occurs very close to T_b. At the same time, it is observed that the diluted ratio of FM at FM/AFM interface influences clearly the value of H_E. The simulated results are consistent with the experimental facts. The maximum behaviour in the H_C−T curves has been explained by the interplay of the softening of some fraction of the spins in the AFM layer near T_N′ and the disorder of the spins in FM layer near Curie temperature T_C.     

Switching process in hard Co–Pt films

The switching process of electrodeposited Co-rich Co–Pt thin films with perpendicular magnetic anisotropy is investigated by out-of-plane angle-dependent hysteresis loop measurements. The switching field angular dependence is discussed in terms of basic reversal mechanisms. A model is proposed, based on a two-step switching process, to evaluate the variations of the intensity and orientation of the internal field as the modulus of external magnetic field is varied at each angle φ. Several experimentally observed salient features are well-understood, indicating that switching is due to inverse domain propagation.     

Magnetic field dependence of asymmetry in the magnetization reversal of ultrathin Co films and Co/Pt multilayers with perpendicular anisotropy

We studied the magnetization reversal in ultrathin [Co/Pt]_n films (n=1, 2, and 4) using magneto-optical Kerr microscopy. These materials demonstrate unusual asymmetries in the activity of nucleation centers and domain wall motion. It was found that application of very high holding magnetic field prior to magnetization reversal, exceeding some critical value much larger than the apparent saturation field, suppresses the subsequent ‘asymmetric’ nucleation centers, activity. We revealed that the ‘asymmetric’ nucleation centers become active again after subsequent reversal cycles coming from a smaller holding field and studied how the asymmetry returns with the decrease of applied holding field. It was found that in low-coercivity ultrathin Co films, the asymmetry in domain wall velocity decreased sharply with the applied field increase and disappeared when the reversal field is greater than μ₀H=1.5 mT.     

Biased magnetization reversal in bi-phase multilayer microwires

We report on the magnetic behaviour of a novel family of two-magnetic-phase multilayer microwires consisting of: (i) a bistable FeSiB glass-coated amorphous microwire as soft nucleus, and (ii) a polycrystalline CoNi outer microtube as harder layer. Such bi-phase microwires are prepared by combined quenching and drawing plus sputtering and electroplating techniques. The stray field produced by the harder outer layer after premagnetizing it to saturation is used to bias the magnetization reversal process of the soft nucleus via dipolar magnetostatic coupling. A detailed analysis of the asymmetric low-field magnetization reversal process of the soft nucleus is presented together with the study of the fluctuating switching field and its asymmetric behaviour. The study of the domain wall characteristics under the presence of a nucleation coil at one end of the microwire allows us to draw conclusions on the role of the bias field generated by the premagnetized hard outer layer.