Ultrarapid formation of homogeneous Cu6Sn5 and Cu3Sn intermetallic compound joints at room temperature using ultrasonic waves

Homogeneous intermetallic compound joints are demanded by the semiconductor industry because of their high melting point. In the present work, ultrasonic vibration was applied to Cu/Sn foil/Cu interconnection system at room temperature to form homogeneous Cu₆Sn₅ and Cu₃Sn joints. Compared with other studies based on transient-liquid-phase soldering, the processing time of our method was dramatically reduced from several hours to several seconds. This ultrarapid intermetallic phase formation process resulted from accelerated interdiffusion kinetics, which can be attributed to the sonochemical effects of acoustic cavitation at the interface between the liquid Sn and the solid Cu during the ultrasonic bonding process.     

Thermodynamic and kinetic study on interfacial reaction and diamond graphitization of Cu Fe-based diamond composite

Cu-Fe based diamond composites used for saw-blade segments are directly fabricated by vacuum and pressure- assisted sintering. The carbide forming elements Cr and Ti are added to improve interfacial bonding between diamond and the Cu-Fe matrix. The interfacial reactions between diamond/graphite and Cr or Ti, and diamond graphitization are investigated by thermodynamics/kinetics analyses and experimental methods. The results show that interfacial reactions and graphitization of diamond can automatically proceed thermodynamically. The Cr3C2 , Cr7C3 , Cr23C6 , and TiC are formed at the interfaces of composites by reactions between diamond and Cr or Ti; diamond graphitization does not occur because of the kinetic difficulty at 1093 K under the pressure of 13 MPa.     

Enhancement of the thermal properties of silver-diamond composites with chromium carbide coating

The present work reports the enhancement of the thermal properties in Ag/diamond matrix composites reinforced with chromium carbide coated diamond particles. The coated diamond particles were characterized by x-ray diffraction, x-ray photoelectron spectroscopy and Raman spectra. The composites were synthesized by spark plasma sintering. The chromium carbide coating on the diamond particles resulted in composites exhibiting improved wettability and strong interfacial bonding between the diamond particles and Ag matrix. The composites with coated diamonds showed a low coefficient of thermal expansion of 8.24 × 10^?6/K and a high thermal conductivity of 695 W/mK at 60 % particle volume fraction, which greatly outperformed the composites with uncoated diamonds at the same particle volume fraction. The obtained results are useful for synthesizing Ag/diamond composites with greatly improved thermal performance.     

Interphase phenomena in superconductive polymer-ceramic nanocomposites

Dynamic mechanical properties (elastic moduli, phase angle) for superconducting (SC) polymer–ceramic composites based on Y₁Ba₂Cu₃O_7?x SC oxide ceramic and superhighmolecular polyethylene have been investigated. The analysis of the obtained data shows a strong interaction of the polymeric binder with the surface of the ceramic grains. It is concluded that changes of packing and structure of the macromolecules occur at the ceramic–polymer interface. This is confirmed by melting enthalpy measurements of SC polymer–ceramic composites of different filler content. Scanning electron microscopy studies of the high temperature SC composites showed that the ceramic grains are evenly covered by the binder for both amorphous and crystalline polymers. EPR (electron paramagnetic resonance) spectra of polymer–ceramic composites have shown that the intensity of the EPR signals of Cu²⁺(1) depends on the nature and the content of binder. The Mn, Co, Zn, Ni containing superconducting composites have been obtained by frontal polymerization.     

Structural,electronic and magnetic properties of negative thermal expansion material Mn3Cu1−xSnxN

We have investigated the structural, electronic and magnetic properties of Mn₃Cu_1?xSn_xN(x=0, 0.5) using first-principles density functional theory within the generalized gradient approximation (GGA) + U schemes. The crystal structure of the compounds is tetragonal crystal for x=0 while it is a cubic crystal for x=0.5. Our spin-polarized calculations give a metallic ground state for the x= 0, 0.5 in agreement with experiments. From the charge density and density of states(DOS), the coupling between Sn 5p with Mn 3d and spin geometrical frustration effect are the main reasons for magnetic transition in Mn₃Cu_1?xSn_xN.     

Formation and properties of Al composites reinforced by quasicrystalline AlCuFeB particles

Al-based composites reinforced by icosahedral (i-) Al₅₉Cu_25.5Fe_12.5B₃ quasicrystalline particles were prepared by solid-state sintering. It was found that Al diffusion from the matrix to the quasicrystalline particles induces phase transformation into the ω-Al₇Cu₂Fe tetragonal phase. In order to preserve the i phase, we used an oxidation pre-treatment of the particles and studied its influence on the kinetics of the phase transformation (Al + i → ω) as a function of temperature by high energy X-ray diffraction. The oxide layer acts as a barrier, reducing efficiently the diffusion of Al up to a sintering temperature of 823 K, allowing the control of the phases in the composites. The mechanical properties and the friction behaviour of the composites were investigated and show the negative influence of the oxide on the interface strength.     

First principles study on electronic properties and occupancy sites of molybdenum doped into LiFePO4

The electronic properties of Mo-doped LiFePO₄ and occupancy sites of Mo are investigated by employing the density functional theory plane-wave pseudopotential method. The calculated results show that Mo doping at Fe site has lower formation energy, which implies that Mo dopants prefer to occupy Fe sites within the LiFePO₄ lattice. Furthermore, the LiFe_1?3/12Mo_1/12PO₄ has wider lithium ion migration channels than Li_1?6/12Mo_1/12FePO₄. For the case of LiFe_1?3/12Mo_1/12PO₄, the calculated narrow band gap (0.18 eV) indicates that the electronic conductivity of LiFePO₄ could be enhanced by doping Mo at the Fe sites. The density of states and charge densities of LiFe_1?3/12Mo_1/12PO₄ demonstrate that the Mo-4d states and MoO bonding play important roles in band gap reduction of LiFe_1?3/12Mo_1/12PO₄.     

Preparation and characterization of Mn doped copper nitride films with high photocurrent response

The Mn-doped copper nitride (Cu₃N) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped Cu₃N films show suitable optical absorption in the visible region and the band gap is ∼1.48 eV. A simple photodetector based on Mn doped Cu₃N films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure Cu₃N. Furthermore, the energy levels of Mn-doped Cu₃N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped Cu₃N films for application of photodetectors.     

合金元素对Nb3Sn生长动力学的影响

研究了合金元素Zr对Cu-Sn/Nb界面上Nb₃Sn生长动力学的影响。实验表明:在单芯复合材料中加入Zr显著提高了Nb₃Sn层的生长速率,层厚与时间的关系显著超过抛物线规律。这些结果不能仅用内氧化生成的ZrO₂颗粒使晶粒细化来解释,还必须考虑ZrO₂颗粒周围过饱和空位使扩散系数增大等因素。在多芯复合材料中热处理时Cu-Sn基体中Sn量的消耗,显著影响Nb₃Sn的生长。考虑了这一因素的Nb₃Sn生长动力学修正公式能对实验结果进行解释。 关键词：     

深过冷Cu60Sn30Pb10偏晶合金的快速凝固

实现了大体积Cu₆₀Sn₃₀Pb₁₀偏晶合金的深过冷与快速凝固. 实验获得的最大过冷度为173 K(0.17T_L). 凝固组织发生了明显的宏观偏析,XRD分析表明,试样上部是由固溶体(Sn),(Pb)相和金属间化合物ε(Cu₃Sn)相组成的三相区,下部为富(Pb)相区. 在小过冷条件下,三相区中ε(Cu₃Sn)相的凝固组织为粗大的枝晶,随着过冷度的增大,ε(Cu₃Sn)相细化成层片状组织,且层片间距随过冷度的增大而减小,而(Sn),(Pb)两相始终以离异共晶的方式存在. 富(Pb)相区中分布有少量的ε(Cu₃Sn)枝晶,枝晶长度随过冷度的增大而增大,且在大过冷条件下发生碎断. (Sn)相在ε(Cu₃Sn)相表面形核、长大,其形态类似于包晶凝固组织. 关键词： 深过冷 快速凝固 偏晶合金 层片组织     

微合金化元素对Fe-Al界面结合的第一性原理研究

利用第一性原理中的DFT理论研究了Fe/Al界面的能量学和电子结构,讨论了替位型掺杂的元素Zn、Mn、Ni在Fe/Al界面处的作用.结果表明:元素Zn、Mn、Ni都会优先替换界面处的Fe原子,使得界面结合能增加,体系更稳定,有利于界面的结合;跨界面的Fe原子与Al原子之间的电荷布居、键长以及差分电荷密度图的计算表明:掺杂后有利于跨界面的Fe-Al间成键,从而加强了Al层与Fe基体的结合,且结合强度由强到弱依次为:掺Zn>掺Mn>掺Ni;与实验比较吻合.最后对掺杂Zn的增韧机理加以解释.     

Fabrication and characterization of Mn-doped Cu2O thin films grown by RF magnetron sputtering

Two series of Mn-doped Cu₂O diluted-magnetic-semiconductor thin films were prepared by radio-frequency (RF) magnetron sputtering. One is prepared at different deposition temperature with the same Mn doping concentration; the other is deposited at the same temperature but with varying Mn concentration. They were used to find out the ferromagnetic-order zone for the Mn-doped Cu₂O systems. Most of the samples show high (1 1 1) orientation, except low doping concentration (<6 at%). No impurities were found by X-ray diffraction and electron diffraction measurement. The doped Mn ions substituted Cu ions in the Cu₂O lattice and there were about 1.5% cation vacancies. The grains shown in the transmission electron microscopy (TEM) images for all the samples were tiny, i.e. just 5 nm in diameter. A rough phase diagram for the ferromagnetic order existing in the Mn-doped Cu₂O thin films was given with varying Mn doping concentration and deposition temperature.     

YBa2(Cu0.95M0.05)3O7-δ的代换效应及其中子衍射研究

X射线衍射实验表明YBa₂(Cu_0.95M_0.05)₃O_7-δ(M=Ti,V,Cr,Mn,Fe,Co,Ni,Cu和Zn)均为单相结构。Fe,Co,Ni和Zn对Cu的替代使超导临界温度T_c显著下降,而同样含量的Ti,V,Cr,Mn对Cu的替代并未对超导性能产生显著影响。并利用中子衍射分析了Ti,Mn,Fe和Co对Cu原子的取代,发现代换原子对Cu的两个晶位各自存在不同的择优占据 关键词：     

氧含量对Fe掺杂YBCO体系中载流子局域化与离子团簇效应的影响

对YBa₂Cu_3-xFe_xO_y（x=00，01，02 ）和YBa₂Cu_2.8Fe_0.2O_y（y=705—653 ）系列样品的氧含量、霍尔系数和超导电性进 行了系统的研究.结果表明，氧含量的变化对样品中载流子的输运和转移及超导电性有重要 影响；适当增加氧含量可以减缓Cu(1)位元素替代对超导转变温度T_c的抑制；在 CuO₂面上参与输运的载流子（空穴）浓度是影响样品超导电性的关键因素.从电 荷转移模型出发 ，结合掺杂离子引起的载流子局域化和离子团簇效应，对载流子浓度随掺杂量和氧含量的变 化从微观结构方面进行了讨论.元素替代量的增加或者氧含量的降低（相同替代量的情况下 ）都将导致Cu-O链区的有效氧空位增多，导致替代元素的离子团簇效应和载流子局域化效应 趋于增强，这是引起参与输运的载流子浓度下降，进而导致T_c降低的主要原因. 关键词： 氧含量 霍尔系数 载流子局域化 离子团簇效应     

Electronic structure analysis of Mn- and Fe-codoped In2O3 by photoemission yield measurements

The valence band electronic structures of Mn- and/or Fe-doped In₂O₃, i.e., In₂O₃:Mn, In₂O₃:Fe, and In₂O₃:(Mn, Fe), are investigated by photoemission yield measurements. Significant changes are observed in the threshold energy of photoemission, depending on the doped magnetic ions, which indicates that an additional occupied band appears above the top of the valence band of In₂O₃ owing to doping with Mn and/or Fe ions. It is confirmed that the order of the threshold energies of photoemission, E_PET, is E_PET(In₂O₃:Mn)<E_PET(In₂O₃:(Mn, Fe))<E_PET(In₂O₃:Fe)<E_PET(In₂O₃). To gain a better understanding of these results, first-principles molecular orbital calculations are also carried out, which successfully explain the observed changes in the photoemission threshold energies.     

Ordering of Nb3Sn layer formed in the bronze process - I

A study of ordering of superconducting Nb₃Sn layers formed in the bronze process has been attempted for the first time. The multifilamentary composites containing 10,000 niobium filaments embedded in a bronze matrix have been diffusion reacted at various temperature for short durations of a few minutes, and the resulting changes in T_c are systematically analysed. The data are discussed in terms of a reordering kinetics model and the values of various activation energies determined are found to be consistent.     

Studies of the microstructure of a superconducting Nb<Subscript>3</Subscript>Sn-Band obtained from (Cu/Nb)/Cu12Sn nanocomposite

A multilayer layer from the superconducting compound Nb₃Sn was obtained by the thermal treatment of composite (Cu/Nb)/Cu12Sn conductor consisting of Cu-12% Sn and Cu/Nb interlayers consisting in turn of nanosized copper and niobium layers. The conductor was coated with copper from the outside, which served as a stabilizer. The microstructure of the cross section of the composite band in dependence on the volume ratio of Cu/Nb and bronze interlayers and the microstructure of the Cu/Nb interlayers themselves in dependence on the annealing temperature were investigated. The optimum ratio of composite components was as follows: t _Nb N _Nb ≈ 0.288t _CuSn N _CuSn, where t and N are the thickness and number of the niobium and bronze layers, respectively. Trying to maintain the optimum design of the conductor forced us to increase the bronze volume content relative to the content of Cu/Nb interlayers, which had a negative impact on the composite microstructure. This resulted in disruptions of Cu/Nb interlayers. A technique has been developed for producing the (Cu/Nb)/Cu12Sn composite as a precursor to the band from the Nb₃Sn compound with allowance for the first experiment’s shortcomings.     

Thermal conductivity enhancement in Cu/diamond composites with surface-roughened diamonds

Cu/diamond composites have potential as a heat spreading material in small-scale devices. In this study, we show that the use of surface-roughened diamonds obtained by heat treatment under N₂ atmosphere and subsequently coated with a thin layer of Ti coating is a feasible method to effectively improve the interfacial bonding and thermal conductivity of Cu/diamond composites. The diamond surface state and prepared composites were investigated by the combination of X-ray diffraction, Raman spectroscopy and microstructure analysis. It is found that the surface-roughened diamonds are in favor of the formation of effective chemical bonds between diamonds and Ti coating through the formation of thin TiC layer and simultaneously provide increased Cu/diamond contact area, which are beneficial to largely decrease the interfacial thermal resistance and thus to greatly enhance the thermal conductivity of Cu/diamond composites.     

Ferromagnetism in laser ablated ZnO and Mn-doped ZnO thin films: A comparative study from magnetization and Hall effect measurements

Room temperature FM was observed in pristine ZnO thin films grown by pulsed laser deposition on Al₂O₃ substrates. It seems to originate from other defects but not oxygen vacancies. Magnetization of thinner films is much larger than that of the thicker films, indicating that defects are mostly located at the surface and/or the interface between the film and the substrate. Data on the Fe:ZnO and Mn:ZnO films show that a transition-metal doping does not play any essential role in introducing the magnetism into ZnO. In the case of Mn doping, the magnetic moment could be very slightly enhanced. Hall effect measurements reveal that an incorporation of Mn does not change the carrier type, but decreases the carrier concentration, and increases the Hall mobility, resulting in more resistive Mn:ZnO films. Since no anomalous Hall effect was observed, it is understood that the observed FM is not due to the interaction between the free-carrier and the Mn impurity.     

Doping investigations of the spin-Peierls-system CuGeO3

We investigated the effect of doping CuGeO₃ with Zn, Ni, Mn and Mg on the Cu-site, and Al, Si, Ga, As, In, Sn, Sb and Ti on the Ge-site. The lattice parameters show a linear dependence on doping. The spin-Peierls (SP) transition temperature T_SP decreases linearly with increasing substitution, the slope depending on the dopant. For increasing Zn-content, a Néel-like groundstate which exhibits spin-flop-behaviour appears after the disappearence of the SP-ground-state. Si-and Ti-doped samples exhibit a similar phase in co-existence with the SP-groundstate.