Chemical analysis of thin films by means of SS-MS, GD-OES, and XPS demonstrated at Ir-Si thermoelectrica

Analytical methods with low detection limits were used for the investigation of Ir-Si thin films, the physical properties of which vary strongly with the chemical composition and the amount of impurities. It is demonstrated how to solve chemical characterization of different thermoelectric Ir-Si thin films by spark source mass spectrometry (SS-MS), glow discharge optical emission spectroscopy (GD-OES) and X-ray photoelectron spectroscopy (XPS). The combined use of the three different facilities allows the quantification of impurities of elements of the entire periodic system in the ppm range (down to 30 at.-ppm in dependence on the element) incorporated in thin film samples. Additional information about the in-depth distribution of elements or specifically bonded species can be achieved with a high depth resolution. Received: 6 April 1998 / Revised: 9 July 1998 / Accepted: 14 July 1998     

Microfabrication and imaging XPS analysis of ITO thin films

In this paper the microfabrication of ITO (tin‐doped indium oxide) films by the sol–gel process combined with chemical modification is presented. The microfabricated ITO thin film could be obtained through a one‐step process that combines film patterning with film leaching. The morphology and chemical components of the patterned ITO thin films were assessed by microscopy and XPS, respectively. Imaging XPS analysis is an effective way to evaluate the quality of the fine patterning. Copyright © 2007 John Wiley & Sons, Ltd.     

Study of the first nucleation steps of thin films by XPS inelastic peak shape analysis

The initial steps in the formation of thin films have been investigated by analysis of the peak shape (both inelastic background and elastic contributions) of X‐ray photoelectron spectra. Surface coverage and averaged height of the deposited particles have been estimated for several overlayers (nanometre range) after successive deposition cycles. This study has permitted the assessment of the type of nucleation and growth mechanisms of the films. The experiments have been carried out in situ in the preparation chamber of an XPS spectrometer. To check the performance of the method, several materials (i.e. cerium oxide, vanadium oxide and cadmium sulfide) have been deposited on different substrates using a variety of preparation procedures (i.e. thermal evaporation, ion beam assisted deposition and plasma enhanced chemical vapour deposition). It is shown that the first deposited nuclei of the films are usually formed by three‐dimensional particles whose heights and degree of surface coverage depend on the chemical characteristics of the growing thin film and substrate materials, as well as the deposition procedure. It is concluded that XPS peak shape analysis can be satisfactorily used as a general method to characterize morphologically the first nanometric moieties that nucleate a thin film. Copyright © 2006 John Wiley & Sons, Ltd.     

Reactions at solid state surfaces and thin films by means of in situ electron microscopy

A survey is presented of modern in situ electron microscopic techniques; the possibilities for studying solid state interactions are discussed. These comprise reactions at solid state surfaces and at thin films, caused by in situ SEM and TEM techniques. The information content of the electron microscopic investigations can be enlarged by these techniques, as it will be shown for different applications. Trends towards a microlab inside the microscope with complementary in situ techniques are also discussed.     

XPS studies of thin polycyanurate films on silicon wafers

Thin films of a diandicyanato bisphenol A (DCBA) prepolymer on silicon substrates have been investigated. Angle dependent X-ray photoelectron spectroscopy reveals some thickness-dependent features, which lead to an adsorption model for the DCBA prepolymer molecules. The adsorption of the first layer is governed by the interaction of the triazine rings with the substrate surface.     

XPS studies of thin polycyanurate films on silicon wafers

Thin films of a diandicyanato bisphenol A (DCBA) prepolymer on silicon substrates have been investigated. Angle dependent X-ray photoelectron spectroscopy reveals some thickness-dependent features, which lead to an adsorption model for the DCBA prepolymer molecules. The adsorption of the first layer is governed by the interaction of the triazine rings with the substrate surface.     

Surface analysis of corrosion inhibitor films by XPS and ToFSIMS

In recent years developments in the capabilities of techniques such as XPS and static SIMS have led to wider application of these methods for the characterisation of industrial materials. After a brief discussion of recent key developments of these techniques, this paper presents a selection of results from research work at our laboratory in the characterisation of organic film-forming corrosion inhibitors on a range of metal substrates which illustrate the nature of the information available. The inherent advantage ofsurface sensitivity and the advantages of a multi-technique approach for the evaluation of surface molecular structure from complex organic compounds is discussed. The additional benefits for analysis offered by the latest developments in technique are also demonstrated.     

Electrochemical and XPS measurements on thin oxide films on zirconium

The potentiodynamic growth of thin oxide films on zirconium electrodes was investigated by coulometric and simultaneous impedance measurements, as a function of the electrode potential (0 V ⩽ E ⩽ 9 V), the pH (0 ⩽ pH ⩽ 14) and the surface preparation (electropolishing, etching and mechanical polishing). The initial film thickness d₀ is at least 4–6 nm; with increasing potential, the oxide grows irreversibly by 2.6 nm/V (pH 0.3) up to 3.2 nm/V (pH 14). In Cl⁻- and ClO⁻₄-containing solutions the oxide growth is limited by localized corrosion. The oxide behaves like a typical insulator with a donor concentration N_D < 10¹⁹ cm⁻³ and a dielectric constant D = 31. Below −0.5 V (vs. SHE) only, th film behaves like an n-type semiconductor with N_D ≈ 3 × 10¹⁹ cm⁻³. From photoelectrochemical measurements a direct and an indirect transition with band gap energies of E_g = 5 eV and E_g = 2.8 eV could be derived. Anodic electron-transfer reactions (ETRs) are blocked at the homogeneous oxide surface, but cathodic ETRs are possible at larger overvoltages. Near the flatband potential E_fb ≈ −1.3 ± 0.2 V (vs. SHE) hydrogen evolution takes place with a simultaneous increase of the capacity which may be attributed to hydrogen incorporation. With XPS measurements the stoichiometry of the oxide film was determined as ZrO₂ at all the pH values examined, but a thin outer layer contained some hydroxide. Components of the forming electrolyte could not be detected (sulphate, borate and perchlorate < 1%), but etching in HF caused accumulation of F⁻ at the inner boundary.     

XPS investigations of thin tantalum films on a silicon surface

Ultra thin tantalum-based diffusion barriers are of great interest in copper metallisation technology. Even the smallest amounts of copper that diffuse into the active silicon regions on a microprocessor will alter their semiconducting properties thus leading to failure of the device. In the present work Ta films were deposited on silicon by electron beam evaporation and magnetron sputtering. The background of this study is investigation of interface formation, which is expected to have substantial influence on the properties of thin Ta films. All experiments were carried out under UHV conditions. This was necessary because Ta is a very reactive metal and is readily oxidized even at low oxygen partial pressure. The Ta4f peak, as a sensitive indicator of the chemical state, was analysed and compared to that for standard samples. Silicide formation is assumed to occur at the Ta/Si interface.     

Matrix-assisted pulsed laser evaporation of polyimide thin films and the XPS study

Compared with the traditional thin film techniques, the matrix-assisted pulsed laser evaporation (MAPLE) technique has many advantages in the deposition of polymer and organic thin films. It has a wide range of applications in many fields, such as non-linear optics, luminescent devices, electronics, various sensors. We have successfully deposited polyimide thin films by using the MAPLE technique. These films were characterized with XPS. The XPS spectra showed that the single-photon effect is ob-vious at low laser fluence and the chemical bonds will be broken, resulting in decomposition of the films. Contrarily, the single-photon effect will decrease and the multi-photon effect and the photothermal effect will increase at high laser fluence, resulting in the protection of the structure of the polyimide thin films and the obvious decrease in decomposition. High laser fluence is more suitable for the deposition of polymer and organic thin films than low laser fluence.     

Characterization of iron-silicon thin films by means of electron diffraction and X-ray spectroscopy

Iron-silicon thin films have been characterized by means of analytical transmission electron microscopic methods. Under certain conditions — composition and annealing temperature — these films exhibit thermoelectric behavior. In particular, the morphology and phase formation which results from annealing of these films, and doping with oxygen and nitrogen, are of interest. The thermoelectric phase -FeSi₂ is formed at temperatures above 500°C. This phase is transformed into electrically conducting phases at about 1000°C. A small oxygen content does not influence this crystallization process. If the oxygen content is higher than 15 atom-% the electrically conducting phases exist even at 500°C. The presence of a small nitrogen content inhibits the formation of the -FeSi₂ phase. The development of silicon and iron nitrides is possible.     

Quantitative analysis of an organic thin film by XPS,AFM and FT‐IR

We report the characterization of Firpic (iridium(III)bis[4,6‐di‐fluorophenyl]‐pyridinato‐N,C²,]picolinate) organic thin film prepared by vacuum deposition to provide a systematic route to organic film quantification. To analyze the characteristics of thin Firpic films on a Si substrate, various techniques such as XPS, Fourier transform infra‐red (FT‐IR) spectrometer, and atomic force microscopy (AFM) are utilized. The Firpic films remain stable without surface morphological or compositional change during deposition and after exposure to X‐ray irradiation or atmospheric environment, for which qualities these films are believed to be an ideal platform as a pure organic thin film. The monotonic increases in FT‐IR and XPS intensities with film thickness are matching well with each other. In particular, from the XPS intensity analysis, the relative atomic sensitivity factors of the present system, electron attenuation length, and molecular density in the organic thin film can be evaluated. Copyright © 2011 John Wiley & Sons, Ltd.     

Investigation of thin surface films by microprobe analysis

The electron microprobe has been applied to study thin films on metallic substrates. The intensities of the characteristic X-rays emitted by thin films of various elements and thicknesses on sublayers of different materials were measured. Two different theoretical approaches (Bishop and Poole, as well as Yakowitz and Newbury) were applied to interpet the X-ray intensities and to determine the film thickness from the intensity measurements. The effect of backscattering from the substrate, resulting in an increase of the intensity of characteristic X-rays of the film, is being described on the basis of a theory given by Hutchins. The corresponding equation for the backscattering factor has been modified to take into account the transmission of the electrons through the film, depending on the mass thickness of the film and the electron energy. The results obtained from theory and experiment are in good agreement for the different experimental parameters applied, except for very thick layers of high atomic numbers measured at low energies where the absorption of electrons in the film plays a dominant role.     

Phase behavior and dewetting for polymer blend films studied by in situ AFM and XPS: from thin to ultrathin films

In this work, the film thickness (l0) effect on the phase and dewetting behaviors of the blend film of poly(methyl methacrylate)/poly(styrene-ran-acrylonitrile) (PMMA/SAN) has been studied by in situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The thinner film shows the more compatibility of the blend, and the phase separation of the film occurs at l0>5Rg (radius of gyration). An initially time-independent q*, the characteristic wavenumber of the phase image, which is in good agreement of Cahn's linearized theory for the early stage of spinodal decomposition, has been obtained in real space and discussed in detail. For 5Rg>l0>3Rg, a "pseudo-dewetting/(phase separation+wetting)" behavior occurs, where the pseudo-wetting is driven by the concentration fluctuation mechanism. For l0<3Rg, a "real dewetting/(phase separation+wetting)" behavior occurs.     

Investigating aluminum thin films properties by stochastic analysis

In this article, we investigate about stochastic properties of a thin film such as aluminum thin film that is formed by thermal evaporation in high vacuum. So we prepare thin films with different thicknesses on glass surfaces in high vacuum chamber with 10^?6 torr. Then, we use Atomic Force Microscopy (AFM), for determining the height fluctuations of aluminum thin films in different growth stages and use an inverse method that utilizes data from AFM to construct a simple equation that governs the stochastic process and a relation between stochastic parameters such as roughness, correlation and Markov length, drift, and diffusion coefficients during the growth process. Also we show that aluminum thin films, during growth by evaporating in high vacuum chamber, have a mono fractal behavior in small distances(little than 100 nm) on the surfaces. Copyright © 2008 John Wiley & Sons, Ltd.     

Direct measurement of the nitrogen content by XPS in self‐passivated TaNx thin films

The nitrogen content in tantalum nitride (TaN_x) thin films, where x indicates that TaN_x is not generally stoechiometric, can be measured directly by XPS. This is the purpose of the present study. However, the XPS spectra of TaN_x present electron energy loss spectroscopy (EELS) peaks that lead to a complex peak fitting, particularly for self‐passivated thin films. A complete peak fitting procedure based upon Tougaard's background, the Doniach‐Sunjic Function and EELS peaks, is presented. It is applied to two self‐passivated TaN_x thin films elaborated by reactive sputtering and presenting a different nitrogen content. The physical properties of these surfaces are interpreted in terms of Ta 4f_7/2 chemical states directly dependent on the nitrogen content. The main results are discussed and improvements are proposed to the method. Copyright © 2008 John Wiley & Sons, Ltd.     

Chemical solution deposited thin films of titanium,chromium, zirconium,and tin oxides

TiO₂, Cr₂O₃, ZrO₂, and SnO₂ films with thicknesses of ～10–100 nm were produced via dipping into solution and subsequent annealing in air. The films were studied by the methods of scanning electron microscopy, elemental X-ray spectral analysis, optical spectroscopy, and X-ray diffraction. The electrical conductivity of the films in air and in a vacuum was measured. The adhesion of most of the films to the substrate was found to be high. A crystalline structure was observed for films thicker than 10 nm. The films have a specific surface resistance of 10⁸–10¹² Ω in air and 10⁹–10¹⁴ Ω in a vacuum. The films are promising as coatings for various purposes, including the development of structures of the core–shell type.