Interband Stark effects in InxGa1−xAs/InyAl1−yAs coupled step quantum wells

The effects of an electric field on the interband transitions in In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells have been investigated both experimentally and theoretically. A In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well sample consisted of the two sets of a 50 Å In_0.53Ga_0.47As shallow quantum well and a 50 Å In_0.65Ga_0.35As deep step quantum well bounded by two thick In_0.52Al_0.48As barriers separated by a 30 Å In_0.52Al_0.48As embedded potential barrier. The Stark shift of the interband transition energy in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that of the single quantum well, and the oscillator strength in the In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum well is larger than that in a coupled rectangular quantum well. These results indicate that In_xGa_1−xAs/In_yAl_1−yAs coupled step quantum wells hold promise for potential applications in optoelectron devices, such as tunable lasers.     

Phase formation and magnetic properties of Nd2Fe14B-type Nd16Co76B8−xCx alloys and their hydrides

An attempt is made to synthesize Nd₂Co₁₄C compound by mechanical alloying Nd₁₆Co₇₆B_8−xC_x (0x8) alloys and subsequent annealing. Phase formation and magnetic properties of Nd₂Fe₁₄B-type Nd₁₆Co₇₆B_8−xC_x alloys and their hydrides are investigated. The Nd₂Co₁₄(B,C) phase with Nd₂Fe₁₄B-type structure is formed for Nd₁₆Co₇₆B_8−xC_x (0x7) alloys, while NdCo₇C_δ phase with TbCu₇-type structure is observed in Nd₁₆Co₇₆C₈ alloy. The lattice parameter c of the Nd₂Co₁₄(B,C) phase decreases with increasing the carbon content. A limit volume of the unit cell to form the Nd₂Fe₁₄B-type structure is estimated to be 0.870 nm³. The spin-reorientation temperature T_SR increases with increasing the carbon content, due to an enhancement of magnetocrystalline anisotropy caused by carbon substitution for boron. After hydrogenation, the lattice expansion is observed for Nd₁₆Co₇₆B_8−xC_x (0x7) alloys. The spin-reorientation temperature of Nd₁₆Co₇₆B_8−xC_xH_y (0x7) is much lower than that of the host alloys. Some structural and magnetic properties of hypothetic Nd₂Co₁₄C and Nd₂Co₁₄CH_y compounds are estimated by extrapolation.     

Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells

The variation of the electronic parameters in the subband as a function of the In_yGa_1−yAs quantum well width in modulation-doped strained Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were investigated by means of Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements. The fast Fourier transform (FFT) of the S-dH oscillations and the Hall-effect data showed that the carrier density and the mobility of the two-dimensional electron gas (2DEG) occupied in the subband increased as the quantum well width increased. The increase in the 2DEG density with increasing the In_yGa_1−yAs well width originated from an increase in the energy difference between the energy level of the electronic subband and Fermi energy, and the increase in the 2DEG mobility is attributed to a decrease of the scattering source. The electronic subband energies, the corresponding wavefunctions, and the Fermi energies in the Al_xGa_1−xAs/In_yGa_1−yAs/GaAs single quantum wells were calculated by a self-consistent method taking into account the exchange-correlation effect together with the strain and nonparabolicity effects. These results indicate that the electronic parameters in Al_xGa_1−xAs/In_yGa_1−yAs/GaAs strained single quantum wells are significantly dependent on the quantum well width.     

Magnetic properties of Lu2Co17−xSix single crystals

The Co-sublattice anisotropy in Lu₂Co₁₇ consists of four competitive contributions from Co atoms at crystallographically different sites in the Th₂Ni₁₇-type of crystal structure, which result in the appearance of a spontaneous spin-reorientation transition (SRT) from the easy plane to the easy axis at elevated temperatures. In order to investigate this SRT in detail and to study the influence of Si substitution for Co on the magnetic anisotropy, magnetization measurements were performed on single crystals of Lu₂Co_17−xSi_x (x=0−3.4) grown by the Czochralski method. The SRT in Lu₂Co₁₇ was found to consist of two second-order spin reorientations, “easy-plane”–“easy-cone” at T_SR1≈680 K and “easy-cone”–“easy-axis” at T_SR2≈730 K. Upon Si substitution for Co, both SRTs shift toward the lower temperatures in Lu₂Co₁₆Si (T_SR1≈75 K and T_SR2≈130 K) with the further onset of the uniaxial type of magnetic anisotropy in the whole range of magnetic ordering for Lu₂Co_17−xSi_x compounds with x>1 due to a weakening of the easy-plane contribution from the Co atoms at the 6g and 12k sites to the total anisotropy.     

Multi-magnetic phases in Fe1−xNixTa2O6

X-ray, neutron diffraction and magnetic susceptibility are reported for Fe_xNi_1−xTa₂O₆ mixed oxides. X-ray refinement indicates homogeneous samples for all the reported concentrations. The neutron-diffraction measurements reveal magnetic structures with double propagation vectors. This system exhibits at least two bicritical points at about x=0.15 and 0.60. For these concentrations, at low temperatures, the system shows the coexistence of two magnetic structures. This bicritical behaviour is interpreted as induced by competition between the different magnetic structures.     

High-temperature ferromagnetism in Zn1−xMnxO semiconductor thin films

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn_1−xMn_xO thin films grown on Al₂O₃ and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μ_B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior.     

Temperature dependence of the electrical resistivity of amorphous Co80−xErxB20 alloys

The temperature dependence of the electrical resistivity of amorphous Co_80−xEr_xB₂₀ alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T_min. In addition, the resistivity shows quadratic temperature behavior in the interval T_min<T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity shows a change in structural short range occurring in the composition range 8–9 at%.     

Thermal-expansion anomalies and spontaneous magnetostriction of Lu2Fe17−xSix intermetallic compounds

The thermal expansion of Lu₂Fe_17−xSi_x solid solutions has been measured by X-ray powder diffraction. The magnetic ordering in all compounds within the homogeneity range (x3.4) is accompanied by a large spontaneous volume magnetostriction, distributed anisotropically over the principal axes of the hexagonal crystal structure. The volume effect ω_s in the ground state reaches 14.7×10⁻³ in Lu₂Fe₁₇ and decreases monotonously to 8.9×10⁻³ for x=3.4, following the reduction of magnetic moment. Despite a still large ω_s, the Invar behavior observed in Lu₂Fe₁₇ changes to a positive thermal expansion for x>1 due to an increasing Curie temperature.     

Magnetocaloric and magnetoresistance properties of La2/3Sr1/3Mn1−xCoxO3 compounds

Structural, magnetic, magnetoresistance and magnetocaloric studies on La_2/3Sr_1/3Mn_1−xCo_xO₃ compounds were reported. The samples were prepared by the conventional ceramic method. X-ray analysis showed the presence of one phase only, in all studied samples. From electrical resistance measurements it was found that the samples show large negative magnetoresistance behavior. The magnetic measurements were performed in a large temperature range, 4.2–750 K and external magnetic fields up to 5 T. The adiabatic magnetic entropy changes, |ΔS|, were determined from magnetization data. Large magnetocaloric effect (MCE) has been obtained in all studied samples.     

The stability of Na-doped Bi2(NbCr)O7−x pyrochlores: The non-existence of “(BiNa)(NbCr)O6”

We show that the pyrochlore described as “(BiNa)(NbCr)O₆” is in fact a non-stoichiometric pyrochlore with an approximate composition of (Bi_1.33Na_0.67)(Nb_1.33Cr_0.67)O_7−x. Refinement of this structure using constant wavelength powder neutron diffraction data reveals the presence of vacancies in the anion sites coupled with displacive disorder of the Bi and Na cations. This is necessary to achieve a satisfactory bonding arrangement for both the Bi and Na cations that occupy the pyrochlore A-type sites. Attempts to prepare other pyrochlores in the series Bi_2−xNa_x(NbCr)O₆ were unsuccessful and it appears that the pyrochlore is only stable only over a very narrow composition range. The structure of the pure Bi pyrochlore Bi₂(NbCr)O₇ is also described.     

Kinetics study of a-Se80Te20−xPbx using non-isothermal crystallization

The kinetics of crystallization in Se₈₀Te_20−xPb_x (x=0, 2, 6 and 10) glasses is studied by non-isothermal method using differential scanning calorimetry (DSC). DSC is performed at different heating rates of 5, 10, 15 and 20 K/min. The values of glass transition and crystallization temperatures are found to be composition and heating-rate dependent. From the heating-rate dependence of the glass transition and crystallization temperatures, the activation energy of crystallization (ΔE_c) and order parameter (n) are calculated.     

Composition and thermal-induced effects on the optical constants of Ge20Se80−xBix thin films

 The effects of composition and thermal annealing near crystallization temperature, T_c on the optical and structural properties of Ge₂₀Se_80−xBi_x (x=0, 2.5, 5 and 7.5 at%) was investigated. The influence of incorporation Bi content in Ge₂₀Se_80−xBi_x system results in a gradual decrease in the indirect optical gap from 1.89 to 1.44 eV, this behavior can be explained as increased tailing. On annealing, the optical band gap E_g decreases gradually for the crystallized films while the refractive index increases, this behavior can be attributed to transformation from amorphous to crystalline and was explained in the light of dangling bond model. The refractive index n of as-prepared and annealed films has been analyzed according to the Wwmple–DiDominico single oscillator model and the values of E_o and E_d were determined. The effect of annealing on the nature and degree of crystallization has been investigated by studying the structure using transmission electron microscope, X-ray diffraction and scanning electron microscope.     

Dopant-site occupancies and superconducting properties of the Fe-substituted La2.5Nd0.5CaBa3(Cu1−xFex)7Oz perovskite

The structural and superconducting properties of single-phase Fe-substituted La_2.5Nd_0.5CaBa₃(Cu_1−xFe_x)₇O_z (LNCBCuFe) with 0.0x0.06 compounds having triple-perovskite structure are investigated using X-ray diffraction, a.c. susceptibility, d.c. magnetization, oxygen content and Mössbauer effect measurements. Mössbauer spectral analysis of x=0.03 sample displays unusual Fe-dopant site occupancies and the Cu(2) plane to Cu(1) chain site ratio in the LNCBCuFe are quite different from those of the usual Fe-doped YBa₂Cu₃O_7−δ. Specifically, we observe substantial occupation of a new chain-associated quasi-octahedral site, E, at 300 K which transforms into the well-known distorted tetrahedron chain site, A, on lowering the temperature to 78 K. The observed reduction of T_c with increasing x in LNCBCuFe supports the view that the hole filling mechanism contributes predominantly to the suppression of superconductivity by Fe.     

The effect of isoelectronic substitution on the magneto-resistance of Sr2−xBaxFeMoO6

We report results from structural, transport and magnetic measurements on polycrystalline Sr_2−xBa_xFeMoO₆ (x=0, 1 and 2) half-metallic double perovskites. We find a large low field magneto-resistance (MR) of −25% at 0.8 T and 77 K for samples that have high resistivities. We show that the low field tunneling MR can be modeled by assuming that there is a disordered region near the insulating grain boundaries as proposed by Serrate et al. It is the magnetization from this region rather than the bulk magnetization that determines the MR in polycrystalline samples.     

Structure, magnetic and transport properties of La1−xBixMnO3

We have investigated the structural, magnetic and transport properties of La_1−xBi_xMnO₃ samples. As the Bi content increases, a structural transition from rhombohedral to pseudocubic and a magnetic phase transition from ferromagnetic ordering to cluster glass are identified. Metal–insulator (MI) transitions and large magnetoresistance (MR) effects are observed at low Bi doping levels, while insulating behavior of resistivity is found in the whole measured temperature range at high-doping levels. Two distinct ferromagnetic insulating (FI) states are found at low temperatures in this system. One can be suppressed and the other can be enhanced by applying magnetic fields. Possible reasons for the observed structural, magnetic phase transitions and changes of resistivity behavior with Bi doping are discussed.     

Direct evidence for charge ordering and electronic phase separation in BixSr1−xMnO3 at room temperature

We present a study of charge ordering and electronic phase separation (EPS) phenomenon in Bi_xSr_1−xMnO₃, for an exhaustive range of x (0.25x0.75), by STM/STS at room temperature (RT) and specific heat measurements at high temperatures (350–650 K). Atomically resolved STM images of the samples, in real space, show the presence of stripe-like charge-ordered (CO) phase coexisting with charge-disordered (CD) phase. The STM images further reveal that the fraction of CO phase increases with an increase in x. The conductance spectra of these phases measured at nano level by STS are discussed. The transition to CO phase above RT is corroborated by specific heat measurements in all samples, giving a T_CO(x) phase diagram for this system.     

W doping-dependent structural and ferroelectric properties of SrBi2Nb2O9 ferroelectric ceramics

The structural and ferroelectric characteristics of SrBi₂(Nb_1−xW_x)₂O₉ (x=0–0.12) ferroelectric ceramics were investigated. SrBi₂(Nb_1−xW_x)₂O₉ ceramics consisted of a single-phase layered perovskite structure when x was less than 0.06. Uniform microstructure and grain size reduction were observed after the introduction of W. The maximum remanent polarization of 16 μC/cm² appeared at x=0.03, and the coercive field decreased with increasing concentration of W. The ferroelectric behavior of SrBi₂(Nb_1−xW_x)₂O₉ ceramics is interpreted based on the Raman measurement.     

Crossover from thermally activated flux creep to quantum tunneling of vortices in a YBa2Cu3O7−x film

We present the results of a study of flux creep in a ring-shaped epitaxial superconducting YBa₂Cu₃O_7−x film at low temperatures. Measurements between 2 and 20 K have been made and it is confirmed that the flux creep is a thermally activated process at temperatures exceeding 10 K. The low-temperature data are analyzed by assuming a crossover to quantum tunneling of the vortex lines. Using the fact that the critical current in our sample is almost independent of temperature below 20 K, we establish the temperature dependence of the Euclidian action S directly from the experimental data without any a priori assumptions. Our results imply that at temperatures below 8.5 K S(T)=S(0)(1−T²/T_qc²), with approximately the same value of T_qc≈15 K for the case of the remnant magnetization as well as in an external magnetic field of 1 kOe.     

Magnetic and electronic phase transitions and magnetoresistance effect in the Pr0.5−xLaxSr0.5MnO3 (, 0.15) system

The electronic and magnetic phase transitions of Pr_0.5−xLa_xSr_0.5MnO₃ with x=0.10 and 0.15 were investigated. The M(T) and ρ(T) curves for these samples clearly show transitions from antiferromagnetic insulator to ferromagnetic semiconductor, ferromagnetic metal and finally to paramagnetic semiconductor as the temperature is increased from 5 to 300 K. Especially, two obvious protrudent peaks in the magnetoresistance curves MR(T) for these samples were clearly observed in the relative low magnetic field, 1 T. One peak appears at around the antiferromagnet-ferromagnet transition temperature T_N (150 K) with MR≈−23%, another occurs at around the ferromagnet-paramagnet transition temperature T_C(275 K ) with MR≈−8.2%. In addition, when the magnetic field was increased, the temperature corresponding to the MR peak at T_N shifts to lower temperature while the temperature corresponding to the MR peak at T_C is fixed.     

Influence of structure on coercivity in nanocrystalline (Fe1−xCox)86Hf7B6Cu1 alloys

The relationship between coercivity and structure in nanocrystalline (Fe_1−xCo_x)₈₆Hf₇B₆Cu₁ (x=0–1) alloys was surveyed. It was found that the increase of Co content in the alloys studied was accompanied by the increase of coercivity. However, we suggest that the factors influencing the coercivity change with the concentration of cobalt in these nanocrystalline alloys. In the iron-rich alloys, the average grain size and magnetostriction play predominant roles in the coercivity. On the other hand, in the case of cobalt-rich alloys, the coercivity mostly originates from the FCC-Co phase with large magnetocrystalline anisotropy and the weak exchange coupling between BCC-Fe(Co) and FCC-Co(Fe).