Low-temperature conductance of crossed carbon nanotubes

Low-temperature conductance of crossed carbon nanotubes with a point contact is investigated theoretically. Explicit formulas for the conductance of the device are obtained by solving the Schrödinger equation. It is shown that the conductance of each tube has minima associated with the resonance scattering of electrons at the points of contact as well with the transfer of electrons to the second tube. The electron transport between the first and the second tubes exhibits resonance behavior.     

Magnetoconductance of carbon nanotube p-n junctions

The magnetoconductance of p-n junctions formed in clean single wall carbon nanotubes is studied in the geometry where a magnetic field is along the tube axis. For long junctions the low temperature magnetoconductance is anomalously large; the relative change in the conductance becomes of order unity even when the flux through the tube is much smaller than the flux quantum. The magnetoconductance is negative for metallic tubes. For semiconducting and small gap tubes the magnetoconductance is nonmonotonic: positive at small and negative at large fields. The identified magnetoconductance mechanism is relevant to magnetotransport in undoped metallic and small gap tubes in the presence of a long range disorder potential.     

Zero-bias conductance in carbon nanotube quantum dots

We present numerical renormalization group calculations for the zero-bias conductance of quantum dots made from semiconducting carbon nanotubes. These explain and reproduce the thermal evolution of the conductance for different groups of orbitals, as the dot-lead tunnel coupling is varied and the system evolves from correlated Kondo behavior to more weakly correlated regimes. For integer fillings N=1, 2, 3 of an SU(4) model, we find universal scaling behavior of the conductance that is distinct from the standard SU(2) universal conductance, and concurs quantitatively with experiment. Our results also agree qualitatively with experimental differential conductance maps.     

Band-structure modulation in carbon nanotube T junctions

We show that the band structure of metallic carbon nanotubes can be dramatically altered by the local electrostatic field. This is realized by coupling chemically functionalized nanotubes to form T junctions. The bar of the T is the conducting channel and the leg of the T is used for local gating. Transport measurements reveal that an energy gap develops upon application of a local electric field in both devices with or without linker molecules at the junction. We propose that the mechanism of the band gap modulation in the T junctions without linker molecules is the field effect, with the linker molecules introducing additional electromechanical and chemical effects.     

Radial deformation and adhesion of carbon nanotube

The van der Waals (vdW) interactions of carbon nanotube (CNT)-substrate and CNT-CNT can cause strong adhesion. The adhesion can lead to radial deformation of CNTs, which is shown in both experiments and theoretical analysis. A scaling approach is used to predict the mechanical properties, vdW adhesion, and the elastic deformation of CNTs. It is found that the indentation of CNT is proportional to R _7/4 and h ^?3/2 in nanotube-substrate system and two same CNT system. Here, R and h are the radius and the wall thickness of CNT, respectively. The indentation ratio H ₁/H ₂ for CNT-CNT is proportional to (R ₁/R ₂)^3/2 and (h ₂/h ₁)^3/2.     

STM/STS investigation of carbon nanotube junctions

In this paper we present scanning tunneling microscopy/spectroscopy investigations of multiwall carbon nanotube junctions. We concentrated on bent and narrowing junctions, which my be formed by introducing pentagon–heptagon defects into a hexagonal network of a carbon nanotube. It was expected that the defects introduced to the nanotube could cause changes in the local density of states. The scanning tunneling spectroscopy results were used to search for and identify these defects. We also discuss a hypothesis for a combination of a telescope junction and a pentagon–heptagon induced junction. PACS 68.37.Ef; 73.22.–f; 61.46.Fg; 71.20.Tx     

Chemically induced conductance switching in carbon nanotube circuits

The chemical reactivity of carbon nanotubes in H2SO4 is investigated using individual, single-walled carbon nanotubes (SWNTs) incorporated into electronic devices. Exploiting the device conductance as a sensitive indicator of chemical reactions, discrete oxidation and reduction events can be clearly observed. During oxidation, a SWNT opens circuits to a nanometer-scale tunnel junction with residual conduction similar to Frenkel-Poole charge emission. When electrochemically reduced, a SWNT returns to its original conductance. This redox cycle can be repeated many times, suggesting a novel chemical method of reversibly switching SWNT conductivity.     

碳纳米管Y形分子结的热导率与热整流现象

基于碳纳米管Y形分子结的结构重构, 通过非平衡分子动力学方法和量子修正, 模拟分析了Y形分子结的热导率和热整流现象. 研究表明: 相对单根完整碳管, Y形分子结在不同温度下导致热导率大约12%–85%的下降; Y结主干向分支方向的导热能力强于分支向主干方向的导热能力; Y结降低热导率的作用随着温度的升高逐渐减小; Y结的热整流效果随着温度的上升先减弱后增强. 关键词： 碳纳米管 热导率 热整流     

Gate-tuned high frequency response of carbon nanotube Josephson junctions

Carbon nanotube Josephson junctions in the open quantum dot limit are fabricated using Pd/Al bilayer electrodes, and exhibit gate-controlled superconducting switching currents. Shapiro voltage steps can be observed under radio frequency current excitations, with a damping of the phase dynamics that strongly depends on the gate voltage. These measurements are described by a standard resistively and capacitively shunted junction model showing that the switching currents from the superconducting to the normal state are close to the critical current of the junction. The effective dynamical capacitance of the nanotube junction is found to be strongly gate dependent, suggesting a diffusive contact of the nanotube.     

Size effect of quantum conductance in carbon nanotube Y-Junctions

This paper studies the quantum conductance properties of three-terminated carbon nanotube Y-junctions, which are built by connecting three (5,5) single-walled carbon nanotubes. The results show that the quantum conductance at the Fermi energy oscillates periodically with the junction's size, and the number of oscillating periodic layers is 3 which is the same as that in the two terminated $(10,0)/m(5,5)/(10,0)$ junctions. Moreover, this Y-junction with different size exhibits obvious different distribution of electron current in the two drain branches, called shunt valve effect of electronic current. Thus the degree of this effect can be controlled and modulated directly by constructing the three branches' sizes or the distribution of defect. The results show in detail that the difference between the two drain currents can be up to two times for some constructions with special sizes. In addition, the uniform distribution of defects in the Y-junction leads to lower quantum conductance than that of other defect configurations.     

Structural and surface features of multiwall carbon nanotube

We present the direct evidence of defective and disorder places on the surface of multiwall carbon nanotube (MWCNT), visualizing the presence of amorphous carbon at those sites. These defective surfaces being higher in energy are the key features of functionalization with different materials. The interaction of the π orbital electrons of different carbon atoms of adjacent layers is more at the bent portion, than that of regular portion of the CNT. Hence the tubular structure of the bent portion of nanotubes is spaced more than that of regular portion of the nanotubes, minimizing the stress.     

Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nanometers. The local electronic modifications are correlated with the observed changes in the radial breathing and G band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces.     

Detection and quantized conductance of neutral atoms near a charged carbon nanotube

We describe a novel single atom detector that uses the high electric field surrounding a charged single-walled carbon nanotube to attract and subsequently field-ionize neutral atoms. A theoretical study of the field-ionization tunneling rates for atomic trajectories in the attractive potential near a nanowire shows that a broadly applicable, high spatial resolution, low-power, neutral-atom detector with nearly 100% efficiency is realizable with present-day technology. Calculations also show that the system can provide the first opportunity to study quantized conductance phenomena when detecting cold neutral atoms with mean velocities less than 15 m/s.     

Structural properties of junctions between two carbon nanotubes

Received: 9 November 1998 / Accepted: 25 November 1998     

Nonlinear structural mechanics based modeling of carbon nanotube deformation

A nonlinear structural mechanics based approach for modeling the structure and the deformation of single-wall and multiwall carbon nanotubes (CNTs) is presented. Individual tubes are modeled using shell finite elements, where a specific pairing of elastic properties and mechanical thickness of the tube wall is identified to enable successful modeling with shell theory. The effects of van der Waals forces are simulated with special interaction elements. This new CNT modeling approach is verified by comparison with molecular dynamics simulations and high-resolution micrographs available in the literature. The mechanics of wrinkling of multiwall CNTs are studied, demonstrating the role of the multiwalled shell structure and interwall van der Waals interactions in governing buckling and postbuckling behavior.     

Size effect of quantum conductance in single-walled carbon nanotube quantum dots

The quantum conductance of two kinds of carbon nanotube quantum dots (CNQD) composed of (5,5) and (10,0) tubes, namely (10,0)/(5,5)/(10,0) and (5,5)/(10,0)/(5,5) with different quantum sizes, are calculated. It is shown that for (10,0)/(5,5)/(10,0) CNQD, one on-resonant peak at the Fermi energy exists only for special QD sizes, and the width of the conductance gap increases from 1.0 eV to 3.2 eV with the increase of size. The positions of peaks around the Fermi energy are obtained by the electronic structure of individual finite (5,5) tubes. We also find that the (5,5)/(10,0)/(5,5) CNQDs behave as a quantum dot, and its localized QD states are different from that of the former CNQD because of the existence of the interface states between (5,5)/(10,0) junctions. For (5,5)/(10,0)/(5,5) CNQD, there is no conductance gap with QDs size smaller than 7 layers, and the conductance peak around the interface quasilocalized state -0.26 eV disappears with QD sizes larger than 23 layers. In addition, for the (5,5)/(10,0)/(5,5) CNQD, the connection method can change the degree of electronic localization of intermediate (10,0) tube.Received: 8 August 2003, Published online: 23 December 2003PACS: 61.48. + c Fullerenes and fullerene-related materials - 71.20.Tx Fullerenes and related materials; intercalation compounds - 72.80.Rj Fullerenes and related materials - 68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.     

Effects of topological defects in the semiconductor carbon nanotube intramolecular junctions

Several intramolecular junctions (IMJs) connecting two semiconductor single-wall carbon nanotubes (SWNTs) have been realized by using the layer-divided technique and introducing the pentagon-heptagon topological defects. The atomic structure of each IMJ is optimized with a combination of density-functional theory (DFT) and the universal force field (UFF) method, based upon which a -orbital tight-binding calculation is performed on its electronic properties. Obtained results indicate that different topological defects and their distributions on the interfaces of the IMJs have decisive effects on the electronic properties of the IMJs. The specific geometrical defects control the localized defect states chiefly, while the diameters of the SWNTs on both sides are also related to them. The influence on the experimental observation brought by the choice of the scanning line is also presented by comparing the scanning results performed on the defect side with those on the defect-free side. A new IMJ structure has been found, and it probably reflects the real atomic structures of the semiconductor-semiconductor (S-S) IMJ [Phys. Rev. Lett. 90, 216107 (2003)].Received: 29 November 2003, Published online: 9 April 2004PACS: 61.46. + w Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals - 73.20.At Surface states, band structure, electron density of states - 73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions     

Boron carbon nanotube superlattices: Geometry, electronic structure and quantum conductance

The stable boron carbon nanotube superlattices (BCNTSLs) that are constructed by periodically connecting carbon nanotube (CNT) and boron nanotube (BNT) with different lengths and diameters are predicted by employing the density functional first-principles calculations. The geometrical and electronic structures as well as quantum conductance of BCNTSLs are studied. It is found that the superlattices can be metallic or semiconducting depending on tube diameters and the ratio of BNT to CNT segments in a periodic unit. The confined states in the superlattice are observed. The present study could offer a useful way for designing some functional nanodevices.