Damage of low-energy ion irradiation on copper nanowire: molecular dynamics simulation

Physical and chemical phenomena of low-energy ion irradiation on solid surfaces have been studied systematically for many years, due to the wide applications in surface modification, ion implantation and thin-film growth. Recently the bombardment of nano-scale materials with low-energy ions gained much attention. Comared to bulk materials, nano-scale materials show different physical and chemical properties. In this article, we employed molecular dynamics simulations to study the damage caused by low-energy ion irradiation on copper nanowires. By simulating the ion bombardment of 5 different incident energies, namely, 1~keV, 2~keV, 3~keV, 4~keV and 5~keV, we found that the sputtering yield of the incident ion is linearly proportional to the energies of incident ions. Low-energy impacts mainly induce surface damage to the nanowires, and only a few bulk defects were observed. Surface vacancies and adatoms accumulated to form defect clusters on the surface, and their distribution are related to the type of crystal plane, e.g. surface vacancies prefer to stay on (100) plane, while adatoms prefer (110) plane. These results reveal that the size effect will influence the interaction between low-energy ion and nanowire.     

Research on ZrO2 Thermal Barrier Coatings Modified by High-Intensity Pulsed Ion Beam

We report a modification method for ZrO2 thermal barrier coatings （TBCs） by high-intensity pulsed ion beam （HIPIB） irradiation. Based on the temporal and spatial distribution models of the ion beam density detected by Faraday cup in the chamber and the ions accelerating voltage, the energy deposition of the beam ions in ZrO2 is calculated by Monte Carlo method. Taking this time-dependent nonlinear deposited energy as the source term of two-dimensional thermal conduction equation, we obtain the temporal and spatial ablation process of ZrO2 thermal barrier coatings during a pulse time. The top-layer TBC material in thickness of about 0.2 μm is ablated by vaporization and the coating in thickness of 1 μm is melted after one shot at the ion current density of 200 A/cm^2. This calculation is in reasonable agreement with those measured by HIPIB irradiation experiments. The melted top coat becoming a dense modification layer due to HIPIB irradiation seals the gaps among ZrO2 crystal dusters, and hence barrels the direct tunnel of oxygen.     

Pulsed Ion Sheath Dynamics in a Cylindrical Bore for Inner Surface Grid—Enhanced Plasma Source Ion Implantation

Based on our recently proposed grid-enhanced plasma source ion implantation(GEPSII) technique for inner surface modification of materials with cylindrical geometry,we present the corresponding theoretical studies of the temporal evolution of the plasma ion sheath between the grid electrode and the target in a cylindrical bore.Typical results such as the ion sheath evolution,time-dependent ion density and time-integrated ion energy distribution at the target are calculated by solving Poisson‘s equation coupled with fluid equations for collisionless ions and BOltzmann assumption for electrons using finite difference methods.The calculated results can further verifty the feasibility and superiority of this new technique.     

利用高能离子模拟研究反应堆结构材料中的辐照效应

简要介绍了载能粒子辐射损伤对反应堆结构材料性能的影响,阐述了载能粒子束特别是高能离子束开展模拟研究的优势,并举例说明了国内利用高能重离子模拟研究反应堆结构材料辐射效应取得的进展。实验结果和理论分析表明,载能离子特别是高能离子辐照非常适合用于模拟研究反应堆结构材料中由粒子辐射引起的材料微观结构和宏观性能变化,是模拟研究反应堆结构材料辐射效应的非常有效的手段。 Radiation damage in structural materials of fission/fusion reactors is mainly attributed to the evolution of intensive atom displacement damage induced by energetic particles （ n, α and/or fission fragments） and highrate helium doping by direct α particle bombardments and/or （n, α） reactions. It can cause severe degradation of reactor structural materials such as surface blistering, bulk void swelling, deformation, fatigue, embrittlement, stress erosion corrosion and so on that will significantly affect the operation safety of reactors. However, up to now, behavior of structural materials at the end of their service can hardly be fully tested in a real reactor. In the present paper, damage process in reactor structural materials is briefly introduced, then the advantages of energetic ion implantation/irradiation especially high-energy heavy ion irradiation are discussed, and several typical examples on simulation of radiation effects in reactor candidate structural materials using high-energy heavy ion irradiations are introduced. Experimental results and theoretical analysis suggested that irradiation with energetic particles especially high-energy heavy ions is a very useful technique for simulating the evolution of microstructures and macro-properties of reactor structural materials.     

Synthesis of Bio-organic Molecules of Life Induced by Low Energy Ion Implantation

Gase discharge and ion implantation are respectively used in some simple water solution and solid molecular samples. The implanted samples are analysed by the ^1H nuclear magnetic resonance spectra and the Fourier transform infrared spectroscopy. The results show that some new NO3^- anion, NO2^- anion, dimethyl ether, and ethanol are formed in the water solution samples with nitrogen, methane and carbon dioxide gas discharge. New cyano groups (-CN) and amino groups (-NH2) are formed in the irradiated solid sodium carboxylic sample with N^ ion irradiation. The experimental results present a new way to synthesize small molecules of life by low-energy ion implantation.     

阴极真空弧离子源的研制

为发展金属离子束材料表面改性技术的工业应用，北师大低能核物理所研制成阴极真空弧离子源和离子注入装置．简要介绍该设备的结构、原理和性能． The cathode vacuum arc ion source and ion implantation facility have been developed in our institute for industrial application of surface modification of materials. In this paper the principle structure and performance of these facilities were described.     

Unidirectional expansion of lattice parameters in GaN induced by ion implantation

This paper reports that the 150-keV Mn ions are implanted into GaN thin film grown on Al2O3 by metal-organic chemical vapour deposition.The X-ray diffraction reciprocal spacing mapping is applied to study the lattice parameter variation upon implantation and post-annealing.After implantation,a significant expansion is observed in the perpendicular direction.The lattice strain in perpendicular direction strongly depends on ion fluence and implantation geometry and can be partially relaxed by post-annealing.While in the parallel direction,the lattice parameter approximately keeps the same as the unimplanted GaN,which is independent of ion fluence,implantation geometry and post-annealing temperature.     

Coupling effects of stress and ion irradiation on the mechanical behaviors of copper nanowires

By using molecular dynamics simulations,we studied the ion irradiation induced damage in mechanically strained Cu nanowires and evaluated the effects of damage on the mechanical properties of nanowires.The stresses in the pre-strained nanowires can be released significantly by the dislocation emission from the cascade core when the strain is greater than 1%.In addition,comparison of the stress-strain relationships between the defect-free nanowire and the irradiated ones indicates that ion irradiation reduces the yield strength of the Cu nanowires,and both the yield stress and strain decrease with the increase of irradiation energy.The results are consistent with the microscopic mechanism of damage production by ion irradiation and provide quantitative information required for accessing the stability of nanomaterials subjected to mechanical loading and irradiation coupling effects.     

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

Nitrogen ions of various doses are implanted into the buried oxide(BOX) of commercial silicon-on-insulator(SOI) materials,and subsequent annealings are carried out at various temperatures.The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage(C-V) technique after irradiation using a Co-60 source.It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses.The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer.Based on the measured C-V data,secondary ion mass spectrometry(SIMS),and Fourier transform infrared(FTIR) spectroscopy,the total dose responses of the nitrogen-implanted SOI wafers are discussed.     

离子辐照单晶Si损伤效应的研究

回顾了低能离子注入单晶Si经由核弹性碰撞引起的损伤特征及其常规的研究方法,介绍了快重离子辐照单晶Si经由电子能损引起的损伤特点及研究现状,并对该领域的研究作了展望. The radiation damage in silicon induced by low energy ion implantation was briefly reviewed together with a short introduction to the common techniques in the area. The damage characteristics of swift heavy ion irradiation in silicon and its investigations were introduced with emphasis on the effects induced by processes of electronic energy losses. It is shown that swift heavy ion can induce defects far beyond the projected range and up to 28 MeV/μm the electronic energy ...     

Formation,Dynamics, and Characterization of Nanostructures by Ion Beam Irradiation

Ion beam irradiation is a potential tool for phase formation and material modification as a non-equilibrium technique. Localized rise in temperature and ultra fast (～10^?12 s) dissipations of impinging energy make it an attractive tool for metastable phase formation. As a matter of fact, a major component of materials science is dominated by ion beam methods, either for synthesis of materials or for its characterization. The synthesis of nanostructures, and their modification by ion beam technique will be discussed in this review article. Formation of nanostructures using ion beam technique will be discussed first. Depending on species (e.g., mass and charge state) and energy range, there are various modes for an energetic ion to dissipate its energy. The role of the electron will also be covered in this article as a basic principle of its interaction with matter, which is same as for an ion. By using a simple reactive ion beam or electron induced deposition, a secondary phase can be nucleated by ion beam mixing techniques, either by using inert gas irradiation or reactive gas implantation on any desired substrate. Nucleation of secondary phase can also be executed by electron irradiation and direct implantation of either negative or positive ions. Post implantation annealing processes are required for the complete growth of clusters formed in most of these ion irradiation techniques. Implantation processes being inherently a non-equilibrium technique, defects always have a role to play in phase formation, amorphization, and beyond (blister formation). When implanted with large energy, even electrons, one of the lightest charged particles, also manifest these properties. Electronic and nuclear energy losses of the impinging charged particle play a crucial role in material modification. Doping a nanocluster, however, is still a controversial topic. Some light will be shed on this topic with a discussion of focused ion beam.     

γ射线与N离子辐照类金刚石薄膜的机理研究

对类金刚石 (以下简称 DLC)薄膜受 γ射线与 N离子辐照的结果进行了比较 .通过 Raman光谱分析得出 :γ射线辐照造成薄膜中 SP3C— H和 SP2C— H键的减少及 SP3C— C键的增加 ,与此同时氢原子结合成氢分子 ,并从膜中释出 ,薄膜的类金刚石特征更加明显.当辐照剂量达1 0×104Gy时 ,SP3C—H键减少了约 5 0 % .N离子辐照使 DLC薄膜中 SP3C— C键、SP2 C—H键及 SP3C—H键的含量均变少 ,并伴随着氢分子的释出 ,直接导致 DLC薄膜的进一步石墨化,其对 SP3C—H及 SP2C— H键的破坏程度远大于γ射线 .两者在辐照机理上截然不同.The results of the diamond like carbon films(the following is called for short DLC film) irradiated by γ rays and N ion were reported. It showed that SP 3C—H and SP 2C—H bonds were decreased, and SP 3C—C bonds were increased by γ ray irradiation, and induced hydrogen recombination with H 2 molecules, and subsequently released from the surface of the films. When the γ ray irradiation dose reached 10×104Gy, the numbers of SP3C—H bonds were decreased by about 50%...     

不同辐照源对黑松花粉粒的生物学效应

研究了N+离子束、 紫外线和γ射线辐照对黑松花粉粒的影响, 对3种辐射源在诱发花粉粒细胞出现损伤效应上的差异性进行了比较分析。 研究结果表明, 3种辐照源对黑松花粉粒萌发和花粉管生长所表现出的效应存在明显的差异。 γ射线的剂量效应曲线表现为近S型; 紫外线辐照的剂量效应曲线呈现出近L型; 离子束的生物学效应主要在两个方面表现出特异性, 即离子束所导致的剂量 效应曲线呈“马鞍型”趋势和N+离子束注入后会诱发花粉管顶端产生出明显的肿胀现象。The effects of pollens and pollen tubes of Pinus thunbergii induced respectively by N+ beam, γ ray and ultraviolet ray were measured , and the differences of the effects caused by the different radiant factors were distinguished. The results showed that there was obvious difference in the damages of the pollen germination and the pollen tube growth led by the radiant factors. The curve of dose effects from γ ray irradiation was similarly S type, and that from ultraviolet ray treatment approximately L type . The effects from ion implantation expressed the two characteristics, the curve of the saddle type and the top inflation of pollen tube.     

Surface Modification of W9Cr4V2Mo High Temperature Bearing Steel by Rare Earth Ion Implantation

Wear and corrosion are the main failure mechanisms of bearings and some measures have been proposed to prolong the working lifetime. Possible approaches include the use of more expensive materials, ion implantation, surface finish enhancement, and ion beam assisted deposition. Among them ion implantation is used extensively for the modification of surface and properties of materials and many studies have disclosed that the beating steel surface can be strengthened by ion implantation of different elements such as N, Mo, N and Mo, and so on.     

离子束辐照的碳纳米管及其物性研究

离子束辐照通常被认为导致材料产生缺陷, 形成无序结构, 从而破坏材料的性能。 但是, 最近利用离子束辐照碳纳米管的实验显示离子束辐照碳纳米管形成无定形的过程不能用传统的离子束辐照材料的机制来解释, 离子束辐照可导致碳纳米管形成一些自组装结构, 如无定形碳纳米结和碳纳米管连接结等。 研究还发现离子束辐照的碳纳米管薄膜在导电性和场发射性能方面都能得到明显的增强。 Ion beam irradiation is usually thought to induce defects and disordered structures in materials and then to destroy the properties of the materials. However, our recent experiments about the ion beam irradiation on carbon nanotubes(CNTs) indicate that the ion beam modification mechanism of CNTs is completely different from traditional one of bulk materials, and ion beam irradiation can lead to self organized structures in CNTs, such as amorphous junctions and CNT junctions. Moreover, the irradiated CNTs exhibit a improved conductivity and an enhanced field emission.     

水稻植株高矮突变系材料的株高性状与产量等相关性分析

对利用N离子束和γ射线诱变获得的粳稻日本晴和籼稻“9311” 89份株高突变体的株高性状和产量性状进行了相关分析。 结果表明, 株高和水稻的产量与其构成因素: 穗粒数、 结实率、 千粒重以及穗长、 单株茎秆干重有着一定的相关性。 株高与穗长、 穗粒数、 千粒重、 单株茎秆干重、 单株生产力呈极显著的正相关, 与有效穗数呈极显著的负相关。 通过对株高与其他产量结构因素的相关分析, 进一步了解了株高的变异对于水稻经济产量因素的影响。 The total 89 plant height mutant lines induced from rice cultivars Nipponbare and “9311” by ion beam implantation and γ rays irradiation were used for analysis of the correlation between plant height and yield component. The results indicated spike length, ear grains, thousand grain weight, stem dry weight and yield have significantly positive correlation with the plant height, while the number of productive ear has significant negative correlation with it. The correlation analysis of the plant height and yield component will help to reveal the influence of the plant height and the factors of yield component.     

用于材料表面改性的多功能等离子体浸没离子注入装置

详细叙述了新近研制的多功能等离子体浸没离子注入（ＰⅢ）装置，在装置设计中，考虑了等离子体产生手段、高压脉冲电源和真空抽气系统多项功能要求，把离子注入、涂敷和溅射沉积结合起来，该已实现了多种气体等离子体注入、气－固离子混合与注入、金属等离子体沉积与注入、离子束混合与离子束增强沉积等，以满足不同材料制成的不同零件对多种表面处理工艺的需要，初步应用结果证明，该装置对于改进４５号钢、Ｔｉ－６Ａｌ０－４Ｖ和