Recent progress on terahertz generation based on difference frequency generation:from power scaling to compact and portable sources

The progress achieved on power scaling and compact and portable THz sources is reviewed.By reversely stacking the GaP plates,the photon conversion efficiency is improved from 25% to 40% which corresponds to the maximum value.When the number of the plates is increased from four to five,the output power decreases because of back conversion.The THz generation is also investigated by mixing the two frequencies generated by a single Nd:YLF solid-state laser.The average output power reaches 1 μW.The introduction of two Nd:YLF crystals significantly improves the output power to 4.5 μW.This configuration facilitates the generation of different output frequencies.     

磷化镓高功率太赫兹共线差频源的研究

在众多实现太赫兹辐射的方法中, 非线性光学共线差频能够实现高功率、宽波段、连续可调谐的太赫兹波辐射. 理论分析表明, 各向同性磷化镓晶体, 在1064 nm附近波长激光共线差频下具有毫米量级的相干长度, 能够满足高功率宽波段的太赫兹辐射条件.实验证明, 磷化镓晶体共线差频实现高功率宽波段的太赫兹光辐射, 其太赫兹光波长调谐范围为95.9–773.4 μm (0.39–3.13 THz), 最高峰值功率7 W位于频率2.0 THz处.该实验结果与理论计算基本保持一致. 关键词： 太赫兹源 磷化镓 共线差频     

Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach

We review our up-to-date result on the development of widely tunable monochromatic THz sources, implemented based on difference-frequency generation (DFG) in GaSe, ZnGeP₂, and GaP. Using a GaSe crystal, the output wavelength was tuned in the range from 66.5 μm to 5664 μm (from 150 cm^?1 to 1.77 cm^?1) with the highest peak power 389 W. This tuning range is the widest ever produced for a continuously tunable and coherent tabletop THz source. Moreover, the conversion efficiency 0.1% is also the highest ever achieved for a tabletop system. On the other hand, based on DFG in a ZnGeP₂ crystal, the output wavelength was tuned in the ranges 83.1–1642 μm and 80.2–1416 μm for two phase-matching configurations. The output power has reached 134 W so far. Finally, using a GaP crystal, the output wavelength was tuned in the range 71.1–2830 μm, whereas the highest peak power was 15.6 W. The advantage of using GaP over GaSe and ZnGeP₂ is that crystal rotation is no longer required for wavelength tuning. Instead, one just needs to tune the wavelength of one mixing beam within the bandwidth of as narrow as 15.3 nm.     

Compact and cost-effective scheme for THz generation via optical rectification in GaP and GaAs using novel fs laser oscillators

We demonstrate a compact and cost-effective setup to generate broadband THz radiation. As pump source we use a diode-pumped solid-state femtosecond oscillator or a femtosecond fiber laser system, partially in combination with an optical parametric oscillator. For the THz generation we utilize optical rectification in gallium phosphide (GaP) and gallium arsenide (GaAs). The THz power is on the order of 1 μW and we demonstrate imaging and spectral measurements with this setup.     

Tunable terahertz waves generated by mixing two copropagating infrared beams in GaP

By mixing two copropagating coherent beams near 1 microm in a zinc blende GaP crystal, we have efficiently generated coherent terahertz (THz) waves. Such efficient conversion is made possible by use of a rest-strahlen band in the THz region to achieve phase matching in an isotropic crystal. A tuning range as wide as 71.1-2830 microm (0.106-4.22 THz) was achieved, whereas the highest output peak power reached 15.6 W at 173 microm. To obtain such a tuning range we continuously tuned the wavelength of one coherent infrared beam within a bandwidth of approximately 15.3 nm.     

Second-order nonlinear optical materials for efficient generation and amplification of temporally-coherent and narrow-linewidth terahertz waves

We have considered forward and backward optical parametric oscillation and amplification, and difference-frequency generation for efficiently generating and amplifying terahertz waves in several second-order nonlinear optical materials. We have used a single crystal of CdSe as an example. We have also investigated GaSe, periodically-poled LiNbO₃ and LiTaO₃, and diffusion-bonded-stacked GaAs and GaP plates. The advantage of using birefringence in CdSe and GaSe is tunability of the output terahertz frequency. Furthermore, both CdSe and GaSe can be used to achieve the backward parametric oscillation without any cavity. On the other hand, in periodically-poled LiNbO₃ and LiTaO₃, one can take advantage of large diagonal elements of second-order nonlinear susceptibility tensor. In the diffusion-bonded-stacked GaAs and GaP plates, quasi-phase matching can be achieved by alternatively rotating the plates. We have shown that it is feasible to achieve forward optical parametric oscillation in the THz domain using these plates. The advantage of using coherent parametric processes is possibility of efficiently generating and amplifying temporally-coherent and narrow-linewidth terahertz waves. Compared with a noncollinear configuration, by using the parallel wave propagation configurations, the conversion efficiency can be higher because of longer effective interaction length among all the waves.     

Widely linear and non-phase-matched optical-to-terahertz conversion on GaSe:Te crystals

We demonstrate the widely linear and broadband terahertz (THz) generation on GaSe:Te crystals by femtosecond laser pulses. It was found that the dopant, Te atoms, in GaSe crystals significantly enhances the efficiency of THz generation, and its central frequency can be tuned by varying the crystal thickness through non-phase-matched optical rectification. Moreover, the wide-ranging linearity for the optical-to-THz conversion and central-frequency-tunable THz generation promise for GaSe:Te crystals to be potential materials for high-power (>1.36 μW) THz applications.     

太赫兹波发射晶体的亚波长微棱锥增透结构的设计与实验研究

光学整流方法产生太赫兹(THz)辐射常用的非线性发射晶体在THz波段都具有较高的折射率, 使得很大一部分THz波由于晶体表面的菲涅尔反射而无法有效耦合输出. 本文报道了GaP晶体THz波发射器输出表面上亚波长微棱锥增透结构的设计和实验研究. 利用有效介质模型在理论上验证了亚波长光栅结构的增透效果, 并进一步设计了适用于不同频段的增透结构的参数. 实验中, 通过微机械加工手段在GaP晶体输出端面刻划了多种亚波长微棱锥结构, 验证了其增透效果及参数对增透频带的关系. 理论与实验的符合证明该设计思想也可用于其他THz波发射晶体. 关键词： THz波 光学整流 亚波长微棱锥增透结构 微加工     

Singly resonant optical parametric oscillator based on adhesive-free-bonded periodically inverted KTiOPO4 plates: terahertz generation by mixing a pair of idler waves

We implemented a singly resonant optical parametric oscillator based on adhesive-free-bonded periodically inverted KTiOPO4 plates. It has major advantages such as walk-off compensation and oscillation at four wavelengths. The threshold of the oscillation was measured to be 8 MW/cm2, which is about a factor of 4 lower than that based in two separate KTiOPO4 crystals. By frequency-mixing the dual-wavelength output in GaP stacks, we generated the terahertz radiation at 2.54 THz. The tuning range of the terahertz output was demonstrated to be 2.19-2.77 THz.     

Circumventing the Manley-Rowe quantum efficiency limit in an optically pumped terahertz quantum-cascade amplifier

Using a microscopic theory based on the Maxwell-semiconductor Bloch equations, we investigate the feasibility of an optically pumped electrically driven terahertz (THz) quantum-cascade laser as a pathway to room-temperature THz generation. In optical conversion schemes the power conversion efficiency is limited by the Manley-Rowe relation. We circumvent this constraint by incorporating an electrical bias in a four level intersubband scheme, thereby allowing coherent recovery of the optical pump energy. The observed THz radiation is generated through both stimulated emission and automatically phase-matched quantum coherence contributions--making the proposed approach both a promising source for THz radiation and a model system for quantum coherence effects such as lasing without inversion and electromagnetically induced transparency.     

Resonant terahertz generation from InN thin films

Highly efficient conversion from ultrafast optical pulses to their terahertz (THz) counterparts has been achieved with InN thin films. An average THz output power as high as 0.931 microW has been obtained for an average pump power of 1 W, corresponding to a normalized conversion efficiency of 190% mm(-2). Based on our measured dependences of the THz output power on pump polarization, incident angle, pump power, and InN film thickness, resonance-enhanced optical rectification is one of the most plausible mechanisms for the THz generation in the InN films.     

Broadband terahertz pulse emission from ZnGeP2

Optical rectification is demonstrated in (110)-cut ZnGeP(2) (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak-intensity range of 0.5 GW/cm(2) to 40 GW/cm(2). ZGP peak-to-peak field amplitude is larger than in the other materials due to either lower nonlinear absorption or larger second-order nonlinearity. This material is well suited for broadband THz generation across a wide range of infrared excitation wavelengths.     

Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal

A tunable source of terahertz (1–4 THz) radiation with a line width of 12 GHz is created on the basis of difference- frequency generation in a GaP crystal. Radiation of a pulsed Nd:YAG laser with a wavelength of 1064 nm and a tunable optical parametric oscillator is used as the pump. The radiation is generated in 10-ns-duration pulses with a pulse repetition rate of 10 Hz. The pulsed radiation power is about 15 mW.     

GaP波导型发射器产生频率可调谐太赫兹脉冲

报道了利用脉宽可调的光子晶体光纤飞秒激光放大器抽运矩形波导结构的GaP晶体太赫兹(THz) 发射器产生频率可调谐的超快THz脉冲.非线性晶体中光整流过程产生的THz辐射频率随抽运光脉冲宽度而 变化. GaP波导THz发射器可通过波导的几何尺寸来控制色散,以达到增加有效作用长度和提高输出功率的目的. 不同横截面尺寸的波导型发射器的THz辐射峰值频率随相位匹配条件的改变而改变,加以脉宽调节技术, 可以在大频谱范围获得频谱精细可调的THz脉冲.实验中在1 mm×0.7 mm的波导型THz发射器中获得了 频率可调谐的THz脉冲.提出实现THz辐射频率大范围调谐的GaP波导型阵列发射器的实施方案.     

激光大气成丝中的非线性光频转换

超快强激光在光学介质（如空气）中传播时由于克尔自聚焦效应和等离体散焦效应动态平 衡会发生一种独特的非线性激光成丝现象。激光成丝过程会诱导一些独特的物理现象,如非线性 光频转换产生超连续光谱、等离子体诱导高压放电、锥形辐射等,在大气传感、天气控制等研究 领域具有重要的应用前景。本文针对飞秒激光大气成丝过程中与传输介质相互作用所诱导的非线 性发光过程,介绍了激光大气成丝所产生的超连续光谱（白光）激光、谐波产生和太赫兹波辐射 三种非线性光频转换现象,并着重探讨了太赫兹波辐射的物理机理、研究现状和应用前景。     

GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects

One of the most important uses of THz spectrometry is to detect defects in molecular structure or in crystals efficiently. We applied GaP Raman THz (GRT) spectrometer to detect and evaluate defects in inorganic and organic materials. High THz-wave absorption due to high defect density of GaSe crystal lowered the efficiency of THz wave generation, when the crystal is used as nonlinear material for DFG (Difference Frequency Generation). Defects in organic molecules could be observed as changes in frequency, intensities of the absorption, and broadenings of the spectra.     

Difference-frequency terahertz-wave generation from 4-dimethylamino-N-methyl-4-stilbazolium-tosylate by use of an electronically tuned Ti:sapphire laser

Among nonlinear materials, the organic ionic salt crystal 4-dimethylamino- N -methyl-4-stilbazolium-tosylate (DAST) is known for its large nonlinearity. We generated a coherent terahertz (THz) wave, using DAST, from the difference frequency between two oscillating wavelengths of an electronically tuned Ti:sapphire laser. In LiNbO(3), LiTaO(3), KTiOPO(4), and GaP crystals, THz-wave generation was not observed under the same experimental conditions. This result proves the high efficiency of DAST crystals for generation of difference-frequency THz waves.     

Approach to broadband terahertz pulse field detection and recovery with electro-optic sampling measurement

Electro-optic sampling (EOS) measurement of terahertz (THz) pulses inherently leads to distortions, especially for relatively broadband THz pulses. In this paper, we proposed an approach to broadband THz pulse field detection and recovery with EOS measurement. In our approach, we use an EOS measurement utilizing a thick GaP crystal, which has a high transverse optical phonon frequency, to reduce the distortions caused by dispersive propagation, interface reflection and Fabry-Perot effect (multiple reflections within an EO crystal). And a retrieval algorithm is designed to eliminate the distortion of broadband THz pluses after passing through the thick GaP crystal (The distortion in a thick GaP crystal is mainly attributed to phase mismatching between the THz pulse and the sampling laser pulse.), in which preconditioned conjugated gradient method is used.     

Terahertz-wave generation with periodically inverted gallium arsenide

We overview methods of THz-wave generation using frequency down-conversion in GaAs with periodically-inverted crystalline orientation. First, we compare different nonlinear-optical materials suitable for THz generation, analyze THz generation process in quasi-phase-matched crystals and consider theoretical limits of optical-to-THz conversion. Then, we review single-pass optical rectification experiments with femtosecond pump pulses, performed in periodically-inverted GaAs, where monochromatic THz output tunable in the range 0.9–3.0 THz was produced. Finally, we describe a novel approach to create a compact highly efficient tunable (0.5–3.5 THz) room temperature monochromatic THz source, based on the concept of intracavity THz generation via resonantly-enhanced difference frequency mixing. This approach allowed generating of 1 mW of average THz power, potentially scalable to 10–100 mW.     

Simulation of THz emission from laser interaction with plasmas

One-dimensional particle-in-cell (PIC) program is used to simulate the generation of high power terahertz (THz) emission from the interaction of an ultrashort intense laser pulse with underdense plasma. The spectra of THz radiation are discussed under different laser intensity, pulse width, incident angle and density scale length. High-amplitude electron plasma wave driven by a laser wakefield can produce powerful THz emission through linear mode conversion under certain conditions. With incident laser intensity of 10¹⁸ W/cm², the generated emission is computed to be of the order of several MV/cm field and tens of MW level power. The corresponding energy conversion efficiency is several ten thousandths, which is higher then the efficiency of other THz source and suitable for the studies of THz nonlinear physics.