光反馈半导体激光器产生低频起伏与高维混沌信号及其演化过程

利用光反馈半导体激光器产生了低频起伏及关联维数为12.2的高维混沌状态. 实验研究了低频起伏到高维混沌的演变过程. 实验表明,当偏置电流I_b <1.03I_th时,随着反馈强度的降低,低频起伏的峰峰值先增大后减小,平均周期一直减小,直至进入稳定状态,但不能转化为混沌. 当偏置电流I_b >1.03I_th时,随着反馈强度的降低,低频起伏的峰峰值一直增大,平均周期一直减小 关键词： 低频起伏 混沌 半导体激光器 反馈     

Model for laser-induced thermal degradation and ablation of polymers

Ablation of organic polymers is described on the basis of photothermal bond breaking within the bulk material. Here, we assume a first-order chemical reaction, which can be described by an Arrhenius law. Ablation starts when the density of broken bonds at the surface reaches a certain critical value. In order to understand the ablation behavior near the threshold fluence, φ_th, non-stationary regimes must be considered. The present treatment reveals several qualitative differences with respect to models that treat ablation as a surface process: (i) Ablation starts sharply with a front velocity that has its maximum value just after the onset. (ii) The transition to the quasi-stationary ablation regime is faster. (iii) Near threshold, the ablated depth h has a square-root dependence on laser fluence, i.e., h∝(φ-φ_th)^1/2. The ablation velocity is very high even near φ_th. (iv) With φ≈φ_th ablation starts well after the laser pulse. (v) The depletion of species is responsible for the Arrhenius tail observed with fluences φ≤φ_th. (vi) Residual modification of material has maximum near the threshold. (vii) Stationary regimes of ablation demonstrate change of effective activation energy with laser intensity. The model calculations are applied to Polyimide (Kapton^TM H). Here, differences in single-pulse ablated depth determined from mass loss and profilometry should be about 10 nm. Received: 16 February 1999 / Accepted: 18 February 1999 / Published online: 28 April 1999     

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

Temperature dependence of the turn-on time delay (t_on) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (N_th) and consequently the laser diode will be biased below the threshold again and a significant value of t_on will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero t_on within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of t_on is calculated according to the temperature dependence of N_th and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of N_th is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (I_inj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of t_on. According to our typical values and at a specified value of modulation current, the dc-bias one (I_ib) should be increased from I_ib = I_th to I_ib ≈ 1.25 and 1.5I_th in order to achieve approximately zero t_on when the temperature increases from 25°C to 55°C and 85°C, respectively.     

Investigation of chaos synchronization in photonic crystal lasers

Chaotic dynamics and chaos synchronization in photonic crystal (PC) lasers with optical feedback are investigated numerically. The effect of various system parameters such as amplitude reflectivity of the external mirror “r”, external cavity length “L_e”, and injection current “I” on system dynamics is addressed in detail. Simulation results are presented using MATLAB to address system behavior. The parameters r, L_e, and I are varied over the ranges (0.05–0.25), (2.8–3.2 mm), and (1.1I_th–2I_th), respectively. The results indicate that very small parameter mismatches between the transmitter laser and receiver laser affect strongly complete chaos synchronization between them.     

级联型四能级原子相干介质中的光学双稳态和多稳态

主要研究了在一单向环形腔内的级联型四能级原子被三个光场驱动的光学双稳态和多稳态行为. 三个单模光场通过三个光子跃迁路径与原子系统耦合. 在这种情况下,中间两能级间所加的耦合场Ω_B变得非常重要. 研究显示耦合场Ω_B的增加会使光学双稳态的阈值减小,同时也会导致光学多稳态的产生.对上面两能级间所加的耦合场的作用也进行了讨论,同时还讨论了探测场失谐和合作参数对光学双稳态及多稳态的影响. 关键词： 原子相干 光学双稳态和多稳态 四能级原子     

First principles study of electronic and optical properties of InAs

The electronic and optical properties of InAs in core-level spectra are calculated using the full-potential linearized augmented plane wave plus local orbitials (FP-LAPW +lo) method. The real and imaginary parts of the dielectric function ε(ω), the optical absorption coefficient I(ω), the reflectivity R(ω), the refractive index n(ω), and the extinction coefficient k(ω)are calculated. All these values are in good agreement with the experimental data. The effect of spin-orbit coupling on optical properties is also investigated and found to be quite small.      

Development of an approximate method for quantum optical models and their pseudo-Hermicity

An approximate method is suggested to obtain analytical expressions for the eigenvalues and eigenfunctions of the some quantum optical models. The method is based on the Lie-type transformation of the Hamiltonians. In a particular case it is demonstrated that E × ɛ Jahn-Teller Hamiltonian can easily be solved within the framework of the suggested approximation. The method presented here is conceptually simple and can easily be extended to the other quantum optical models. We also show that for a purely imaginary coupling the E × ɛ Hamiltonian becomes non-Hermitian but Pσ₀-symmetric. Possible generalization of this approach is outlined. Presented at the 3rd International Workshop “Pseudo-Hermitian Hamiltonians in Quantum Physics”, Istanbul, Turkey, June 20–22, 2005.     

Generation of CdS clusters using laser ablation: the role of wavelength and fluence

The formation of cationic clusters in the laser ablation of CdS targets has been investigated as a function of wavelength and fluence by mass spectrometric analysis of the plume. Ablation was carried out at the laser wavelengths of 1064, 532, 355, and 266 nm in order to scan the interaction regimes below and above the energy band gap of the material. In all cases, the mass spectra showed stoichiometric Cd _n S _n ⁺ and nonstoichiometric Cd _n S _n−1⁺, Cd _n S _n+1⁺, and Cd _n S _n+2⁺ clusters up to 4900 amu. Cluster size distributions were well represented by a log-normal function, although larger relative abundance for clusters with n=13, 16, 19, 34 was observed (magic numbers). The laser threshold fluence for cluster observation was strongly dependent on wavelength, ranging from around 16 mJ/cm² at 266 nm to more than 300 mJ/cm² at 532 and 1064 nm. According to the behavior of the detected species as a function of fluence, two distinct families were identified: the “light” family containing S₂⁺ and Cd⁺ and the “heavy” clusterized family grouping Cd₂⁺ and Cd _n S _m ⁺. In terms of fluence, it has been determined that the best ratio for clusterization is achieved close to the threshold of appearance of clusters at all wavelengths. At 1064, 532, and 355 nm, the production of “heavy” cations as a function of fluence showed a maximum, indicating the participation of competitive effects, whereas saturation is observed at 266 nm. In terms of relative production, the contribution of the “heavy” family to the total cation signal was significantly lower for 266 nm than for the longer wavelengths. Irradiation at 355 nm in the fluence region of 200 mJ/cm² has been identified as the optimum for the generation of large clusters in CdS.     

平坦宽带混沌激光的产生及同步

利用光纤环长外腔光反馈半导体激光器产生了频谱平坦的宽带混沌激光,其对应的激光频谱可有效地隐藏外腔的谐振频率,增加了系统的保密性.通过单向耦合方式,将产生的混沌激光注入到另一个参数相近的半导体激光器中,实现了平坦宽带混沌同步输出,两同步激光器输出的相关系数达到084.同时实验研究了注入强度和主从激光器的频率失谐对同步质量的影响,结果表明在强光注入锁定下,在很大频率失谐范围内均可实现同步,而且注入强度越大,主从激光器输出的相关系数越大,维持混沌同步所允许的频率失谐范围越大. 关键词： 混沌同步 单向光纤环 光反馈 半导体激光器     

Stationary Properties and Stochastic Resonance for a Saturation Laser Model with Cross-correlation Between Quantum Noise Terms

The stationary properties of a saturation laser model with cross-correlation between the real and imaginary parts of the quantum noise are investigated theoretically. Using the Novikov theorem and the Sargent technique, we obtain the analytic expressions of the stationary probability density distribution, the mean, the variance and the skewness of the saturation laser model. The cross-correlation coefficient λ and other parameters can make the stationary probability density distribution P _st (I) generate interesting two-extrema structure, one-extremum structure, or no-extremum structure. It is clearly found that a first- order-like-transition is induced by the coupling strength |λ| of the complex quantum noise terms in the saturation laser model. When the laser system is operated above the threshold, the mean 〈I〉 becomes larger and the output of the laser intensity increases; however the coupling strength |λ| attenuates the output of the laser intensity. When the laser is operated near and below the threshold, the mean 〈I〉 becomes smaller, the output of the laser intensity decreases, and |λ| still attenuates the output of the laser intensity. When a periodic signal is added to a saturation laser model with cross-correlation between quantum noise terms, the interesting stochastic resonance phenomena occur at λ=0. The noise intensity Q decreases the values of the resonance peak, however, the amplitude of the periodic signal B enhances the values of the resonance peak.     

A cw room-temperature Ho,Tm:YLF laser pumped at 1.682 μm

We present the results obtained with a Ho,Tm:YLF crystal grown at a new crystal growth facility in Pisa. The optical quality of the sample has been tested by studying its performance as the active medium of a laser operating at 2.06 μm. We employed three different pump laser sources: a Ti:sapphire, a diode (both tuned at 793 nm) and, for the first time, a continuous-wave Co:MgF₂ laser, tuned at 1.682 μm. At room temperature the best slope efficiency was 30 % in the case of “red” pumping, and 59 % in the case of “infrared” excitation. The typical lasing threshold is about 100 mW. Received: 14 March 2001 / Revised version: 15 June 2001 / Published online: 19 September 2001     

Chaotization and decay instability of a diffraction-catastrophe field in the presence of focusing of high-power laser radiation in a nonlinear medium

Focusing of a high-power laser beam, whose initial wave front is deformed by spherical aberration and astigmatism, in a medium with refractive-index nonlinearity is investigated by the computer experiment method. It was found that the extended formations which arise near the focus are no longer diffraction catastrophes, since they are structurally unstable. It is shown that weak disturbances of the shape of the initial wave front produce extremely strong distortions of the optical field in the focusing region. As the wave propagates in the z direction, spatial chaos in the distribution of the optical field develops in the region of focusing (from 137 to 142 mm). Optical turbulence arises in the focusing region as a result of self-diffraction of light by self-induced nonuniformities of the refractive index of the medium. After the region with the smallest cross section of the formation near the focus, the three-dimensional optical field has the form of chaotically dispersing “splashes” and extended “filamentary ejecta.” Zh. Tekh. Fiz. 68, 74–83 (September 1998)     

Effect of regimes of cooling in a magnetic field on the magnetization of a La0.9Sr0.1MnO3 single crystal

Magnetization measurements were performed on a lanthanum manganite La_0.9Sr_0.1MnO₃ single crystal in the temperature interval 4.2–300 K and magnetic field interval 50 Oe-55 kOe in two sample cooling regimes: 1) cooling down to 4.2 K in a high (55 kOe) magnetic field, and 2) cooling in a “zero” field. It is shown that the temperature dependences of the magnetization M(T) are substantially different in these regimes. Pronounced anomalies of M(T) were observed at temperatures T*=103 K and T _c =145 K. The first anomaly is attributed to a structural transition, while the second one corresponds to a ferromagnet-paramagnet phase transition. The magnetization of a La_0.9Sr_0.1MnO₃ single crystal in the cooling regimes studied shows typical “spin-glass” behavior. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 39–43 (10 July 1998)     

Theory of superfluidity of nuclear matter based on the Fermi-liquid approach

This paper discusses how an electromagnetic field consisting of a superposition of a constant magnetic field and a field of laser type can affect nuclear beta decay. In general it is not assumed that the intensities of the two types of fields are small compared to the characteristic field H _cr*=β ₁ H _cr, where H _cr=m ² c ³/eℏ and the quantity β ₁ depends on the energy liberated in the decay and the configuration of the electromagnetic field. For nonrelativistic decays the quantity β ₁ is found to be of the same order as the maximum kinetic energy of an electron referenced to its rest energy β ₁∼I≪1. It is assumed that the frequency of the wave field satisfies ℏω/mc ²⩽I. The behavior of the probability for the process is studied over a wide range of the fundamental parameters that characterize the fields. Corresponding asymptotic expressions are derived in the “weak”-and “strong”-field regimes. Also discussed are so-called interference corrections to the unperturbed decay probability, which cannot in principle be studied by the methods of perturbation theory. It is shown that the times and distances that are important in generating these contributions exceed the parameters of the unperturbed processes, just as in the case of a plane-wave field previously investigated in detail by Nikishov and Ritus. However, in contrast to the case of a pure wave field, when a system is simultaneously subjected to a constant magnetic field and a wave field, the degree to which these characteristic regions are enlarged can depend not only on the intensities of the electromagnetic fields but also on their rates of change, even in the limit in which the wave field is slowly varying. Zh. éksp. Teor. Fiz. 111, 3–24 (January 1997)     

Valency control in MoO<Subscript>3−δ</Subscript> nanoparticles generated by pulsed laser liquid solid interaction

The possibility of synthesizing binary oxides nanoparticles in a nano-scaled form by laser liquid solid interaction using a NdYAG “1.064 μm” as an irradiating laser source is reported. The case of MoO_3−δ is emphasized. Furthermore, it is demonstrated that the Mo–O electronic valence can be controlled through the coupling effects of oxygen enriched nature of the used coating liquid layer, namely pure H₂O or H₂O₂ and the laser beam fluence. Dark blue hydrated molybdic pentoxide Mo₂O₅·xH₂O and yellow molybdenum trioxide MoO₃ nano-suspensions were reproducibly synthesized with hydrogen peroxide and water, respectively, at a relatively high ablation rate. The average size of the molybdenum trioxide nanoparticles was about <ϕ>~8 nm, slightly larger than the molybdic pentoxide ones “<ϕ>~6.2 nm”.     

Simultaneous dual-wavelength emission at 0.90 and 1.06 µm in Nd-doped laser crystals

Continuous-wave (CW) simultaneous laser emission on the 0.9-μm ⁴ F _3/2 → ⁴ I _9/2 transition and the ⁴ F _3/2 → ⁴ I _11/2 transition at 1.06 μm is obtained in Nd-based laser crystals of thin-disk geometry and using a multi-pass pumping scheme. A Nd:Y₃Al₅O₁₂ (Nd:YAG) thin disk emitted simultaneous laser radiation at 946 and 1064 nm with 5.1 W output power, and Nd:YVO₄ and Nd:GdVO₄ thin-disk lasers with more than 3 W output power at 0.91 and 1.06 μm were realized. The ratio between the output power at one of the wavelengths and the total output power could be varied by the laser resonator design. An intracavity frequency-doubled Nd:YVO₄ thin-disk laser with alternate green at 532 nm and “deep-blue” at 457 nm generation of high average output powers is demonstrated.     

Accurate Stabilization of a 3 mW Single-Mode Output He-Ne Laser by Intermittent Frequency Offset Locking to an Iodine Stabilized He-Ne Laser

A high-power, unmodulated frequency standard laser light with low running cost is a powerful tool for industrial measurement involving laser calibration and interferometry in length and shape. To obtain such a laser light, we developed an intermittent frequency offset locked laser (IFOL laser). This laser system, composed of an iodine stabilized He-Ne laser (I₂SL) and a high-powered symmetric three-mode He-Ne laser (HP-3ML, optical output=5 mW), provides two stabilization operational modes: (1) independent mode (I-mode) and (2) slave mode (S-mode). Utilizing the frequency pulling effect, HP-3ML is stabilized at the condition of symmetric three-mode oscillation, and a 3 mW single-mode light with frequency instability of 10^-12 is obtained (I-mode). When the optical frequency deviates from the allowed limit during I-mode, HP-3ML is temporarily offset-locked to I₂SL (S-mode) with frequency resettability of 10^-10 and frequency instability of 10^-12. After completion of the drift reset in S-mode, HP-3ML is stabilized in I-mode again, and then I₂SL is turned off. In a typical case of allowed drift in ±1 MHz, repetitive operation of I-mode for 10 days and S-mode for 5 min was satisfactory. Such an intermittent operation reduces the working time of I₂SL dramatically, resulting in low running cost that enables long-term use in industrial measurement.     

CW mode locked Nd:YVO4 laser pumped by 20-W laser diode bar

The efficient cw mode locking (cw-ML) regime was demonstrated in Nd:YVO₄ laser by means of saturable absorber mirror (SAM). The 0.3-at.% Nd³⁺ doped 10-mm-long YVO₄ crystal end pumped by 20-W diode module with a beam shaper was applied as a gain medium located in the close vicinity to the rear flat mirror of the first arm of Z-type resonator of 316 cm total length with two curved mirrors of 100-cm curvature radii. The SAM of 2%-saturable absorptance and saturation fluence of 50 μJ/cm² was mounted at the opposite end of a resonator. The developed “dynamically stable” cavity design mitigates detrimental role of thermal aberration in gain medium, enforcing clean perfect mode locking even for the highest pump densities. The cw-ML pulses with 47.5 MHz repetition rate and pulse durations in the range of 15–20 ps were observed for a wide range of pump powers and output coupler losses. In the best case, for 32% of output coupler transmission, up to 6.2 W of average power with near 35% slope efficiency was achieved. The thresholds for Q-switched ML, cw-ML regimes were 2.67 W and 6.13 W of pump power, respectively. For the maximum pump power of 20 W we obtained 133 nJ of pulse energy with 16-ps pulse duration, resulting in a peak power higher than 8 kW. The threshold energy density at SAM giving the QML regime was estimated to be about 30 μJ/cm², threshold of cw-ML regime was 220 μJ/cm².     

Control of material removal of fused silica with single pulses of few optical cycles to sub-picosecond duration

Surface ablation of a dielectric material (fused silica) by single femtosecond pulses is studied as a function of pulse duration (7–450 fs) and applied fluence (F _th<F<10F _th). We show that varying the pulse duration gives access to high selectivity (with resolution ∼10 nm) for axial removal of matter but does not influence the transverse ablation selectivity, which only depends on the normalized applied fluence F/F _th. The ablation efficiency is shown to be inversely dependent on the pulse duration and saturates with respect to the applied fluence earlier at ultra-short pulse durations (≤30 fs). The deduced optimal fluence F _opt corresponding to the highest ablation efficiency for each pulse width defines two regimes of laser application. Below F _opt, the removed material depth can be accurately adjusted in a large range (∼40–200 nm) as a function of the applied fluence and the morphology of the ablated pattern almost reproduces the Gaussian beam distribution. Above F _opt, the material removal depth tends to saturate and the morphology of the ablated pattern evolves to a top-hat distribution. The coupled evolution of depth and morphology is related to the dynamics of formation of dense plasma at the surface of the material, acting as an ultra-fast optical shutter.     

Role of localized excitons in the stimulated emission in ultra-thin CdSe/ZnSe/ZnSSe single quantum-well structures

Photo-pumped lasing properties have been investigated in a CdSe/ZnSe/ZnSSE single quantum wells (SQWs) with the well-layer thickness (L_W) of 1, 2 and 3 monolayer (ML). At 20 K, the laser threshold for the SQW withL_W = 1 ML was the lowest in spite of the smallest active layer thickness. The carrier (exciton) sheet density at the threshold (n)_thwas estimated to be as low as 7 × 10¹⁰cm⁻², which is well below Mott's screening density. Time-resolved photoluminescence has revealed that the localized biexciton band, whose peak energy agrees with the lasing peak, appeared on the low-energy side of the main PL peak at this level of carrier concentrations. Theoretical calculation has also shown that the localized biexciton recombination has to be taken into account for the lasing process. On the contrary, then_thvalues of the SQWs with 2 and 3 ML are 1 order of magnitude larger than that of the SQW with 1 ML. This may be due to the smaller oscillator strength of both localized excitons and localized biexcitons because of the larger inhomogeneous broadening, resulting in an increased carrier density for achieving optical gain sufficient to overcome the reflection losses.