13.56 MHz/2 MHz柱状感性耦合等离子体参数的对比研究

通过Langmuir双探针和发射光谱诊断方法,对比研究了驱动频率为13.56 MHz和2 MHz柱状感性耦合等离子体中电子密度和电子温度的径向分布规律.结果表明:在高频和低频放电中,输入功率的增加对等离子体参数产生了不同的影响,高频放电中主要提升了电子密度,低频放电中则主要提升了电子温度.固定气压为10 Pa,分别由高频和低频驱动时,电子密度的径向分布均为"凸型".而电子温度的分布差异比较明显,高频驱动时,电子温度在腔室中心较为平坦,在边缘略有上升;低频驱动时,电子温度随径向距离的增加而逐渐下降.为了进一步分析造成这种差异的原因,在相同放电条件下采集了氩等离子体的发射光谱图,利用分支比法计算了亚稳态粒子的数密度,发现电子温度的径向分布始终与亚稳态粒子的径向分布相反.继续升高气压到100 Pa,发现不论高频还是低频放电,电子密度的径向分布均从"凸型"转变为"马鞍形",较低气压时电子密度的均匀性有了一定的提升,但低频的均匀性更好.     

多源感应耦合等离子体的产生及等离子体诊断

基于单组多匝线圈的小腔体感应耦合等离子体，研究了线圈配置与耦合效率等之间的关联，并将实验结果应用到多组并联螺旋天线感应耦合等离子体放电体系中.采用了改进的朗谬尔探针方法对单源和多源感应耦合等离子体的电参量分别进行了表征.结果表明，使用多螺旋天线并联方式可以产生低气压高密度的感应耦合等离子体放电，通过调整工艺参量，可以将等离子体密度和光刻胶的刻蚀均匀性控制在80％以上. 关键词： 多源感应耦合等离子体 朗谬尔探针 等离子体灰化     

Influence of a centered dielectric tube on inductively coupled plasma source: Chamber structures and plasma characteristics

A high-density RF ion source is an essential part of a neutral beam injector. In this study, the authors attempt to retrofit an original regular RF ion source reactor by inserting a thin dielectric tube through the symmetric axis of the discharge chamber. With the aid of this inner tube, the reactor is capable of generating a radial magnetic field instead of the original transverse magnetic field, which solves the E × B drift problem in the current RF ion source structure. To study the disturbance of the dielectric tube, a fluid model is introduced to study the plasma parameters with or without the internal dielectric tube, based on the inductively coupled plasma(ICP) reactor. The simulation results show that while introducing the internal dielectric tube into the ICP reactor, both the plasma density and plasma potential have minor influence during the discharge process, and there is good uniformity at the extraction region. The influence of the control parameters reveals that the plasma densities at the extraction region decrease first and subsequently slow down while enhancing the diffusion region.     

感应耦合等离子体的1维流体力学模拟

采用双极扩散近似的流体力学模型,通过数值模拟方法研究了射频感应耦合等离子体(ICP)中等离子体密度和电子温度等物理量的空间分布,其中射频源的功率沉积由动力学理论给出。分析了不同的射频线圈的驱动电流和放电气压对等离子体密度和电子温度空间分布的影响。在低气压下,等离子体密度基本上保持空间均匀分布。随着放电压强的增加,等离子体密度的分布呈现出明显的空间不均匀性。当线圈电流增大时,等离子体密度和电子温度都随着增大。     

双频容性耦合等离子体相分辨发射光谱诊断

采用相分辨发射光谱法, 对双频容性耦合纯Ar和不同含O₂量的Ar-O₂混合气体放电等离子体的鞘层激发模式进行了探究. 在射频耦合电源上极板的鞘层区域处观察到两种电子激发模式: 鞘层扩张引起的电子碰撞激发模式和二次电子引起的电子碰撞激发模式; 并发现这两种激发模式均受到低频射频电源周期的调制. 在纯Ar放电等离子体中, 两种激发模式的激发轮廓相似; 而在Ar-O₂混合气放电等离子体中, 随着含O₂量的增加, 二次电子的激发轮廓变弱. 此外, 利用相分辨发射光谱法对不同含O₂量的Ar-O₂混合气放电下Ar的 750.4 nm谱线的平均低频电源周期轴向分布进行了研究, 得到了距耦合电源上极板约3.8 mm处为双频容性耦合射频等离子体的鞘层边界. 关键词： 双频容性耦合等离子体 等离子体鞘层 发射光谱     

Changes of the electron dynamics in hydrogen inductively coupled plasma

Changes of the electron dynamics in hydrogen （H2） radio-frequency （RF） inductively coupled plasmas are investigated using a hairpin probe and an intensified charged coupled device （ICCD）. The electron density, plasma emission intensity, and input current （voltage） are measured during the E to H mode transitions at different pressures. It is found that the electron density, plasma emission intensity, and input current jump up discontinuously, and the input voltage jumps down at the E to H mode transition points. And the threshold power of the E to H mode transition decreases with the increase of the pressure. Moreover, space and phase resolved optical emission spectroscopic measurements reveal that, in the E mode, the RF dynamics is characterized by one dominant excitation per RF cycle, while in the H mode, there are two excitation maxima within one cycle.     

射频电感耦合夹层等离子体中的模式转换

本文利用微波相位法和光谱诊断法, 研究了ICP放电等离子体在圆台状夹层等离子体中E模和H模相互转换的物理现象. E模和H模的之间转换过程是一个瞬间突变的, 转换点的输入功率随真空室压强的变化而变化. H模向E模转换的阈值功率低于E模向H模转换的值, 等离子体参数随输入功率变化曲线类似于铁磁物质中的磁滞回线. Ar II 408.2 nm谱线的强度的变化规律和电子密度随功率变化的规律基本一致. 通过本实验可以获得一种电子密度范围为3.85×10¹¹ cm^-3 < n_e < 4.68× 10¹¹ cm^-3, 外表面积为0.3 m², 厚度为2 cm稳定工作的等离子体源.     

Diagnostic of capacitively coupled radio frequency plasma by homogeneous discharge model

In this Letter, a plasma diagnostic technique is reported to evaluate the plasma parameters of capacitively coupled radio frequency argon plasma on the basis of homogeneous discharge model. The technique is implemented for wide range of operating pressure ranging from few mTorrs to atmospheric pressure. Considerable dependence of plasma parameters on the plasma series resonance effect and the drift velocity of the electron for low pressure plasma and on the ion density for atmospheric pressure plasma jet were observed.     

Time-resolved radial uniformity of pulse-modulated inductively coupled O_2/Ar plasmas

Time-resolved radial uniformity of pulse-modulated inductively coupled O_2/Ar plasma has been investigated by means of a Langmuir probe as well as an optical probe in this paper. The radial uniformity of plasma has been discussed through analyzing the nonuniformity factor β(calculated by the measured n_e, lower β means higher plasma radial uniformity). The results show that during the active-glow period, the radial distribution of ne exhibits an almost flat profile at the beginning phase, but it converts into a parabola-like profile during the steady state. The consequent evolution for β is that when the power is turned on, it declines to a minimum at first, and then it increases to a maximum, after that, it decays until it keeps constant. This phenomenon can be explained by the fact that the ionization gradually becomes stronger at the plasma center and meanwhile the rebuilt electric field(plasma potential and ambipolar potential) will confine the electrons at the plasma center as well. Besides, the mean electron energy( ε_(on)) at the pulse beginning decreases with the increasing duty cycle. This will postpone the plasma ignition after the power is turned on. This phenomenon has been verified by the emission intensity of Ar(λ = 750.4 nm). During the after-glow period, it is interesting to find that the electrons have a large depletion rate at the plasma center. Consequently, ne forms a hollow distribution in the radial direction at the late stage of after-glow. Therefore, β exhibits a maximum at the same time. This can be attributed to the formation of negative oxygen ion(O~-) at the plasma center when the power has been turned off.     

柱面天线射频感性耦合等离子体放电模式特性的实验研究

利用Z-scan、电流、电压探头,通过测量等离子体吸收功率、天线电流、电压、等离子体直流悬浮电位等多种参数,研究了匹配网络、天线耦合强度、导电地面积、气压等多种因素对E,H放电模式特性及模式转化行为的影响.基于Γ型阻抗匹配网络中串联电容对射频电源输出功率的影响,提出了E—H放电模式转化的正负反馈区概念.研究发现：在相同的其他放电条件下,处于正反馈区时等离子体放电易于产生跳变型模式转化,而且模式跳变的临界天线电流、回滞宽度、跳变临界功率、跳变功率差等参数均随阻抗匹配网络参数产生明显变化;在负反馈区内,模式转化过程趋于连续.由于阻抗匹配网络的影响,E—H模式的跳变电流并不是总大于H—E模式的跳变电流.在不同导电地面积、阻抗匹配网络、气压下,模式转化过程中等离子体直流悬浮电位的变化呈现多样性. 关键词： 射频等离子体 感性耦合 容性耦合 模式转化     

Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition

A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E (capacitive discharge) to H (inductive discharge) mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial (2D image) profile is symmetrical in the H mode, but the 2D image is an asymmetric profile in the E mode. Moreover, the electron density and emission intensity jump up discontinuously at high pressure, but increase almost continuously at the E to H mode transition under low pressure.     

Characteristics of dual-frequency capacitively coupled SF_6/O_2 plasma and plasma texturing of multi-crystalline silicon

Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon(mc-Si) surface texturing. In this paper, capacitively coupled plasma(CCP) driven by a dual frequency(DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency(RF)input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density n9e must be larger than 6.3 × 10cm-3and the spectral intensity ratio of the F atom to that of the O atom([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9 × 109cm-3.     

感应耦合等离子体刻蚀p-GaN的表面特性

研究了p-GaN材料经感应耦合等离子体(ICP)刻蚀后的表面特性,并用不同的方法对刻蚀表面进行处理.利用原子力显微镜(AFM)和X射线光电子能谱(XPS)对刻蚀样品进行分析,并在样品表面制作Ni/Au电极,进行欧姆接触特性的测试.实验结果表明了NaOH溶液处理表面对改善材料表面和欧姆接触特性是比较有效的. 关键词： GaN 感应耦合等离子刻蚀 表面处理 欧姆接触     

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为了更好地提高引出离子束的均匀性,对离子束刻蚀用矩形射频电感耦合等离子体(ICP)离子束源提出了三种线圈的设计方法,并对这三种线圈激发的电场进行了数值计算和比较。结果表明,直线段式不等距天线和并联多螺旋不等距天线线圈能够产生均匀性良好的电场,且其耦合效率高。     

Quasi-delta negative ions density of Ar/O_2 inductively coupled plasma at very low electronegativity

One of the novel phenomena of Ar/O_2 inductively coupled plasma, the delta negative ions density profile is discovered by the fluid simulation at very low electronegativity. The anions delta is found to be formed by the collaboration of successive plasma transport phases. The plasma transport itself is affected by the delta, exhibiting many new phenomena.A new type of Helmholtz equation is devised to mathematically explain the delta forming mechanism. For revealing the physics behind, a revised spring oscillator dynamic equation has been constructed according to the Helmholtz equation, in a relevant paper [Zhao S X and Li J Z(2021) Chin. Phys. B 30 055202]. The investigation about the anions delta distribution is a nice prediction of new phenomenon in low temperature electronegative plasmas, waiting for the validation of related experiments.     

双频容性耦合等离子体密度径向均匀性研究

利用自主研制的全悬浮双探针, 对影响双频容性耦合等离子体径向均匀性的因素进行了研究. 发现低频功率、放电气压和放电间距对径向均匀性有明显影响. 合适的低频功率、放电气压及较大的极板间距可以得到更均匀的等离子体. 采用与实验相同的放电参数, 利用改进的二维流体模型进行理论模拟, 得到了不同极板间距下径向离子密度分布, 并和实验测量结果进行了比较, 两者的变化趋势基本符合. 关键词： 双频容性耦合等离子体 径向均匀性 全悬浮双探针 二维流体模型     

射频感应耦合Ar-N2等离子体物理特性的Langmuir探针测量及理论研究

分别通过Langmuir探针测量和动力学模型模拟方法研究了射频感应耦合Ar-N₂等离子体中电子能量分布、电子温度、电子密度等物理量随N₂含量的变化规律.实验研究结果表明：电子能量分布呈现出非Maxwell型分布,并由双温分布向三温分布过渡;电子温度在不同的气压下随N₂含量的增加呈现出不同的变化规律.在放电气压小于1.3 Pa时,电子温度随N₂含量的增加而下降;当气压大于1.3 Pa时,电子温度随N₂关键词： 感应耦合等离子体 2混合气体放电')" href="#">Ar-N₂混合气体放电 电子能量分布 Langmuir探针     

Microwave-assisted digestion with a single reaction chamber for mineral fertilizer analysis by inductively coupled plasma optical emission spectrometry

A systematic approach is proposed to evaluate microwave-assisted digestion in a single reaction chamber for the simultaneous determination of elements in the mineral fertilizer and raw material by inductively coupled plasma optical emission spectrometry. A reference material was digested using 12 acid mixtures containing nitric, hydrochloric, orthophosphoric, hydrofluoric or boric acid. Principal components analysis was applied for data treatment. Three digestion procedures based on diluted acids exhibited the most accurate results, with relative errors for reference values ranging from ?15% to +?9%. Limits of quantification were in the range of 0.2?mg cadmium kg^?1 up to 1000?mg aluminum kg^?1.     

等离子体刻蚀工艺的物理基础

介绍了等离子体刻蚀工艺背景以及有关等离子体刻蚀机理的研究进展,综述了等离子体刻蚀机理的研究方法,着重阐述了电容耦合放电和电感耦合放电等离子体物理特性,特别是双频电容耦合放电等离子体和等离子体鞘层研究中的关键问题.