新型高速半导体器件IMOS阈值电压解析模型

本文在研究IMOS器件结构的基础上, 分析了该器件不同区域的表面电场, 结合雪崩击穿条件, 建立了P-IMOS的阈值电压解析模型. 应用MATLAB对该器件阈值电压模型与源漏电压、栅长和硅层厚度的关系进行了数值分析, 并用二维器件仿真工具ISE进行了验证. 结果表明, 源电压越大, 阈值电压值越小; 栅长所占比例越大, 阈值电压值越小, 硅层厚度越小, 阈值电压值越小. 本文提出的模型与ISE仿真结果一致, 也与文献报道符合. 这种新型高速半导体器件IMOS阈值电压解析模型的建立为该高性能器件及对应电路的设计、仿真和制造提供了重要的参考.     

A Kind of Neural Network Model Displaying Self-Organized Criticality

Based on the LISSOM model and the OFC earthquake model, we introduce a selforganized neural network model, in which the distribution of the avalanche sizes (unstable neurons) shows power-law behavior. In addition, we analyze the influence of various factors of the model on the power-law behavior of the avalanche size distribution.     

外加磁场下真空沿面闪络特性数值模拟

以单粒子模型和带电粒子运动方程为基础,采用蒙特卡罗方法,编写了真空沿面闪络过程计算程序,研究了外加磁场对真空沿面闪络过程的影响,主要是对二次电子发射及电子束的雪崩运动的影响。研究表明：外加磁场的存在,改变了绝缘体表面电子的运动,进而影响到绝缘体表面电荷的分布,从而在宏观上对绝缘体的耐受电压产生影响;外磁场抑制真空沿面闪络的效果与磁场的空间分布有关,磁场加在阴极附近时产生的效果优于加在阳极附近。     

块状TiO2气凝胶的溶胶-凝胶过程及结构

对块状TiO2气凝胶的溶胶-凝胶过程及结构进行了实验研究,结果发现:增加催化剂的量,凝胶化时间缩短,湿凝胶的透明度降低,强度提高;增加前驱体的量,凝胶化时间缩短,湿凝胶的透明度变化不大,强度提高;增加水量,凝胶化时间先缩短后增加,湿凝胶透明度先减小后增加,强度先增加后减小。利用扫描电镜对超临界干燥法制备的不同催化剂量和密度的块状TiO2气凝胶的结构进行了表征,并对结构与溶胶-凝胶过程之间的联系进行了分析。结果表明:增加催化剂量,由于缩聚反应进行的程度提高,气凝胶粒子粒径较小且总的孔径较大。减小前驱体量,气凝胶粒子粒径增大且结构逐渐疏松。     

Electric field distribution and simulation of avalanche formation due to the passage of heavy ions in a parallel grid avalanche counter

Electric field distributions and their role in the formation of avalanche due to the passage of heavy ions in parallel grid avalanche type wire chamber detectors are evaluated using a Monte Carlo simulation. The relative merits and demerits of parallel and crossed wire grid configurations are studied. It is found that the crossed grid geometry has marginally higher gain at larger electric fields close to the avalanche region. The spatial uniformity of response in the two wire grid configurations is also compared.      

Self-organized Criticality in a Model Based on Neural Network

Based on the LISSOM neural network model, we introduce a model to investigate self-organized criticality in the activity of neural populations. The influence of connection (synapse) between neurons has been adequately considered in this model. It is found to exhibit self-organized criticality (SOC) behavior under appropriate conditions. We also find that the learning process has promotive influence on emergence of SOC behavior. In addition, we analyze the influence of various factors of the model on the SOC behavior, which is characterized by the power-law behavior of the avalanche size distribution.     

Specific features of electron avalanche in high gas multiplication mode

The results of studying an electron avalanche in narrow-gap wire chambers in the region of avalanche-to-streamer transition are described. The amplitude and temporal characteristics of the chambers in the high gas multiplication mode (≥10⁷) are given. Due to specific features of the electric field distribution in narrow-gap chambers and the application of a CF₄-based working gas, previously unknown processes taking place in a shower and more clearly reflecting the dynamics of avalanche development were discovered—electron velocity distribution, electrostatic oscillations of the avalanche as a whole, decrease in the anode signal duration, increase in the delay time of charge induction on the cathode by the avalanche development time, and, finally, varying shapes of the anode and cathode signal amplitude distributions. The observed processes can be explained if a completed avalanche is represented in the form of a double charged layer. The basis for such a representation is the specific features of a high-current avalanche mentioned above. The model under consideration is simple, provides answers to questions related to streamer formation and growth, and reflects the structure of an ionized channel and its stability mechanism.     

Self-consistent hybrid model for a stratified positive column of a low pressure glow discharge

The stratification of a positive column of a low-pressure glow discharge in inert gases has been studied with the help of a self-consistent hybrid model. The model is based on the solution of a nonlocal kinetic Boltzmann equation for the electron distribution function, a nonstationary drift-diffusion equation for the ions, and the Poisson equation for the electric field. Spatial electron and ion density distributions and the electric field distribution in the positive column were obtained. The converged solution of the model gives a self-consistent resonant strata length L and the value and the form of the modulated plasma parameters. An unexpected surprising result was obtained: for a given potential drop in the positive column of a low-pressure glow discharge, a self-consistent spatially modulated striation-like electric field does not lead to the resonant increasing of the ionization frequencies in the discharge as compared with a constant electric field with the same potential drop. Usually, it was assumed that, in spatially modulated field distributions, all the parameters in a striated plasma will be more pronounced and have a resonant form. The text was submitted by the authors in English.     

The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure

A high-side thin-layer silicon-on-insulator (SOI) pLDMOS is proposed, adopting field implant (FI) and multiple field plate (MFP) technologies. The breakdown mechanisms of back gate (BG) turn-on, surface channel punch-through, and vertical and lateral avalanche breakdown are investigated by setting up analytical models, simulating related parameters and verifying experimentally. The device structure is optimized based on the above research. The shallow junction achieved through FI technology attenuates the BG effect, the optimized channel length eliminates the surface channel punch-through, the advised thickness of the buried oxide dispels the vertical avalanche breakdown, and the MFP technology avoids premature lateral avalanche breakdown by modulating the electric field distribution. Finally, for the first time, a 300 V high-side pLDMOS is experimentally realized on a 1.5 μ m thick thin-layer SOI.     

Different Avalanche Behaviors in Different Specific Areas of a System Based on Neural Networks

Based on the standard self-organizing map (SOM) neural network model and an integrate-and-fire mecha-nism, we introduce a kind of coupled map lattice system to investigate scale-invariance behavior in the activity of modelneural populations. We find power-law distribution behavior of avalanche size in our model. But more importantly, wefind there are different avalanche distribution behaviors in different specific areas of our system, which are formed by thetopological learning process of the SOM net.     

Different Avalanche Behaviors in Different Specific Areas of a System Based on Neural Networks

Based on the standard self-organizing map (SOM) neural network model and an integrate-and-fire mecha-nism, we introduce a kind of coupled map lattice system to investigate scale-invariance behavior in the activity of model neural populations. We find power-law distribution behavior of avalanche size in our model. But more importantly, we find there are different avalanche distribution behaviors in different specific areas of our system, which are formed by the topological learning process of the SOM net.     

Effect of a dust component on the rates of elementary processes in low-temperature plasmas

Elementary processes in dusty, beam-driven plasma discharges are studied experimentally and theoretically for the first time. A theoretical model is constructed for a beam-driven plasma containing macroscopic particles. The effect of macroscopic particles on the electron energy distribution function is estimated assuming a Coulomb field for the particles. The resulting rate of electron-ion recombination on the macroscopic particles is compared with the electron loss constant calculated from the electron energy distribution function with an electron absorption constant in the orbital-motion approximation. This approximation, which is valid in the collisionless case, is found to work satisfactorily beyond its range of applicability. The distributions of the charged particles and electric fields created by macroscopic particles in a helium plasma are determined. The experimental data demonstrate the importance of secondary emission by high-energy electrons. Zh. éksp. Teor. Fiz. 115, 2020–2036 (June 1999)     

雷云电场作用下长地线表面正极性辉光电晕放电的仿真研究

在雷云电场的缓慢作用下, 一种无流注的正极性辉光电晕在接地物体表面起始, 向周围空间注入大量正极性空间电荷, 从而改变雷电先导对雷击目的物的选择. 本文对雷云电场作用下起始于长地线表面的正极性辉光电晕放电进行了仿真研究; 考虑了正极性离子与其他离子的附着与碰撞作用, 建立了一种精确的二维正极性辉光电晕模型; 并通过在实验室内开展高压电晕放电试验, 测量了不同背景电场下的电晕电流; 与本文所建模型的仿真结果进行对比, 对模型的正确性进行了验证. 基于上述模型, 对正极性辉光电晕在雷云感应作用下的起始发展过程与电晕特性进行了仿真模拟, 得到了该电晕的电晕电流、正离子密度分布规律以及正离子迁移规律. 发现在雷云电场作用下, 电晕放电产生的正离子在迁移初期于垂直于地线的平面内基本呈圆对称状均匀分布, 但随着离子逐渐远离地线其分布不再均匀, 呈拉长的椭圆形分布, 多数离子最终分布于地线上方区域并逐渐向雷云方向迁移; 由于正离子在地线上方迁移区聚集形成的正空间电荷背景对行进电子束具有衰减和消耗作用, 抑制了电子崩的形成, 并降低了电子崩转化为流注的概率, 阻止了新的电子崩对流注的不断注入, 同时正空间电荷背景使气体的碰撞面增大, 增加了与电子的复合概率, 引起大量电子的消耗, 最终抑制了电子崩的形成与流注的发展, 地线表面的上行先导得到抑制.     

CEE-TPC中GEM读出探测器传输性能实验研究

气体电子倍增器(GEM)因其具有较好的位置分辨以及各项同性的二维结构等优点,近年来受到了广泛的关注,在HIRFL-CSR上正在建设的低温高密核物质测量谱仪(CEE)也计划使用GEM作为TPC的读出探测器。不同电场条件下GEM探测器的传输特性对探测器的有效增益及能量分辨有较大影响。文中研究了单层GEM探测器中漂移区电场及感应区电场对探测器传输特性的影响;随后研究了双层GEM探测器的电压分配及传输区电场对探测器电荷传输性能的影响。结果表明,在单层及多层GEM探测器中,漂移区电场、传输区电场及感应区电场主要通过改变电子透过率和GEM雪崩电场强度及分布影响探测器的电荷传输性能,进而影响探测器的有效增益及能量分辨。以上实验结果表明GEM探测器是CEE-TPC读出探测器的理想选择,同时测试结果也为TPC中多层级联GEM工作点的选择提供了参考依据。     

长脉冲二极管绝缘子真空表面闪络

 在长脉冲强流无箔二极管实验过程中观察到绝缘子沿面闪络现象。分析实验现象认为是屏蔽环与绝缘子距离过近造成了屏蔽环边缘高场强,从而产生场致发射电子。电子在强电磁场作用下撞击绝缘子表面引起了二次电子雪崩从而导致真空表面闪络。运用静电场模拟和粒子束模拟,改进屏蔽环结构。改进后的二极管工作电压500 kV,电流12 kA,在1 T引导磁场下稳定运行,没有再发生真空表面闪络。     

长脉冲二极管绝缘子真空表面闪络

在长脉冲强流无箔二极管实验过程中观察到绝缘子沿面闪络现象。分析实验现象认为是屏蔽环与绝缘子距离过近造成了屏蔽环边缘高场强,从而产生场致发射电子。电子在强电磁场作用下撞击绝缘子表面引起了二次电子雪崩从而导致真空表面闪络。运用静电场模拟和粒子束模拟,改进屏蔽环结构。改进后的二极管工作电压500 kV,电流12 kA,在1 T引导磁场下稳定运行,没有再发生真空表面闪络。     

雪崩倍增GaAs光电导太赫兹辐射源研究进展

在飞秒激光激励下用GaAs光电导开关作为太赫兹(THz)辐射天线, 已经广泛用于太赫兹时域光谱系统, 但目前国际上都是使用GaAs光电导开关的线性工作模式, 而GaAs光电导开关的雪崩倍增工作模式所输出的超快电脉冲功率容量远大于其线性工作模式, 迄今为止, 还没有人提出用雪崩倍增机理的GaAs 光电导开关作为辐射源产生THz电磁辐射. 本文探讨了用 雪崩倍增工作模式的GaAs光电导开关作为光电导天线产生THz电磁波的可能性及研究进展. 通过理论分析及实验研究, 在实验上实现了: 1) 利用nJ量级飞秒激光触发GaAs光电导天线, 可以进入雪崩倍增工作模式; 2) 利用光激发电荷畴的猝灭模式, 可以使GaAs光电导天线载流子雪崩倍增模式的延续时间(lock-on 时间)变短. 这为利用具有雪崩倍增机理的GaAs光电导天线产生强THz辐射奠定了基础.     

多针对板负电晕放电电离区形貌确定

在前期对常压下多针对板负电晕放电伏安特性研究的基础上,利用光学发射光谱(OES)法检测放电产生的N₂发射光谱,研究其电离区形貌。根据N₂发射光谱中峰值最大的第二正态激发谱峰强度I_SPB在高压针电极周围的空间分布,较精确地确定了电离区形貌;在电离区内体积分I_SPB,获知I_SPB与放电电流I之间的关系。实验结果表明,电离区大小随着外加电压U升高而增大;电子雪崩始于距离针尖半径约1 mm处的球面上,并且只在mm量级范围内发展,即电离区的大小为mm量级;电子雪崩沿针尖轴向比沿径向发展范围大,电离区形貌为“子弹”状;I_SPB的积分值与I成二次相系数很小的二阶线性关系,故放电中受激物质主要是N₂;高能电子主要存在于电离区,迁移区中形成电流的带电粒子为离子。     

Smith Purcell effect in GaAs/AlGaAs heterostructures

We report a new experimental technique to study the form of the hot electron distribution function in GaAs/AlGaAs heterostructures. A weak periodic surface potential induces Smith-Purcell-FIR-radiation of the electric field driven hot electrons in the 2-dimensional electron gas directly reflecting their velocity distribution. The FIR- radiation is detected by a magnetic field tuned InSb-detector. In samples with very low electron concentration and high mobility the emission spectra show a significant shift to higher energies and develop a steep high energy slope with increasing electric field when we use the geometry with grating vector q directed parallel to the electric field (q ∥ E). In the geometry q ⊥ E smooth decays are observed at lower energies. Comparison of the results with theory gives experimental evidence of a non-equilibrium shape of the distribution caused by the onset of LO-Phonon emission. In addition, the hot electron mean free path of the heated distribution is derived by investigating the experimental emission spectra as a function of the grating period length. The influence of a limited hot electron mean free path on the spectral width is described in terms of a Fourier-analysis of the interaction potential. In drift direction a mean free path of λ = 200 nm is obtained, whereas the mean free path is smaller in the direction perpendicular to the drift direction.     

Self-organized Criticality in an Integrate-and-Fire Neuron Model Based on Modified Aging Networks

Based on an integrate-and-fire mechanism, we investigate self-organized criticality of a simple neuron model on a modified BA scale-free network with aging nodes. In our model, we find that the distribution of avalanche size follows power-law behavior. The critical exponent τ depends on the aging exponent α. The structures of the network with aging of nodes change with an increase of α. The different topological structures lead to different behaviors in models of integrate-and-fire neurons.