大功率VCSEL三角列阵的空间相干性

由厄米-高斯光束理论和空间相干性定理出发,研究了大功率垂直腔面发射激光器(VCSEL)三角形列阵器件的光束质量和空间相干特性.采用二阶距法和空间相干度积分法得到980 nm波段VCSEL三角列阵器件的远场发散角和空间相干度,并讨论了列阵器件单元间距对其远场特性和空间相干特性的影响.实验结果表明:当三角列阵单元孔径为150 μm时,随着列阵单元间距由200 μm增大到300 μm,列阵器件的远场发散角由9.5°增加到12.5°,而其空间相干度由0.719减小到0.526.在相同注入电流条件下,3种列阵器件的出光功率基本相同.     

高斯-谢尔模型列阵光束的远场发散角和远场辐射强度

推导出了高斯-谢尔模型（GSM）列阵光束通过自由空间传输其二阶矩束宽、远场发散角和远场辐射强度的解析表达式,并给出了GSM列阵光束与高斯光束具有相同远场发散角的条件.研究表明,具有相同远场发散角的GSM列阵光束与对应的高斯光束并不具有相同的远场辐射强度分布,这一特性与单束GSM光束的差异很大. 关键词： 高斯-谢尔模型列阵光束 远场发散角 远场辐射强度     

介质膜集成衬底垂直外腔面发射激光器

垂直外腔面发射激光器(VECSEL)可以实现大功率的高光束质量输出.针对外腔制作工艺复杂、腔体结构松散的缺点,研制了一种介质膜集成衬底表面外腔底面发射激光器.将衬底表面生长的多层介质绝缘薄膜与N-DBR、P-DBR共同构成复合腔结构,衬底充当外腔.该结构能够抑制高阶模式,进而优化输出光谱及远场发散角等光束特性.在已有的理论指导下,制作了有源区直径为200 μm、外腔腔长250 μm的VECSEL.室温下,向器件连续直流注入3.4A,测试得到输出功率为260 mW,远场发散角的半角宽度为3.8°,光谱半高全宽为0.046 nm.与常规结构底面发射VCSEL进行比较,发现VECSEL器件的光束质量得到了明显改善,实验结果与理论仿真结果有较好的一致性.     

1550nm高功率基横模半导体激光器及温度特性

通过引入渐变Al组分和脊型波导的设计,制备了1550 nm高功率AlGaInAs/InP基横模半导体激光器,室温连续工作模式下器件的斜率效率达到0.35 mW/mA,在500 mA的工作电流下,输出功率为138 mW,垂直和水平方向的远场发散角分别为32.9°和11.1°,证明器件具有良好的基横模输出特性。同时,建立高阶模截止条件温度模型,研究了器件在不同温度下功率-电流（P-I）曲线中kink效应与远场发散角steering效应的产生原因,阐述了温度对基横模和高阶模增益的影响机制。通过比较不同腔长器件发生kink效应的电流大小,证明长腔长结构可以有效防止kink效应的发生。     

光子晶体波导对垂直腔面发射激光器光束远场形貌的调控

研究了光子晶体波导对垂直腔面发射激光器(VCSEL)光束远场形貌的调控.采用三层对称平板波导模型分析了影响光子晶体VCSEL(PC-VCSEL)远场发散角的参数.研究表明,PC-VCSEL中光子晶体的填充比(空气孔直径和光子晶体周期的比值)以及空气孔的刻蚀深度控制了光束的发散角,低填充比和浅刻蚀的PC-VCSEL有利于获得低发散角的光束.设计并制作了两种不同结构参数的PC-VCSEL,这两种器件中光子晶体的填充比和空气孔的刻蚀深度不同.实验结果表明,低填充比和浅刻蚀的PC-VCSEL的发散角更低,与理论分析符合得很好.     

部分相干厄米-高斯列阵光束通过湍流大气传输的方向性

推导出了部分相干厄米-高斯(H-G)列阵光束通过湍流大气传输的二阶矩束宽和远场发散角的解析公式。采用远场发散角作为光束方向性的评价参数,研究了部分相干H-G列阵光束通过湍流大气传输的方向性。研究表明:在一定条件下,部分相干H-G列阵光束与对应的高斯光束不论在自由空间还是湍流大气中均具有相同的方向性。此外,进一步研究发现,在自由空间中,由远场发散角和归一化远场平均光强分布所表征的部分相干H-G列阵光束的方向性是不一致的,但湍流可以使得两种描述相一致。这一结论与高斯-谢尔模型(GSM)列阵光束的相关结论存在差异。在自由空间中,与高斯光束具有相同远场发散角的非相干合成的GSM列阵光束与对应的高斯光束具有相同的归一化远场光强分布。     

高功率InGaAs量子阱垂直腔面发射激光器的研制

采用AlAs氧化物限制工艺实验制备了衬底出光的高功率大出光窗口（直径为300 μm）InGaAs/GaAs量子阱垂直腔面发射半导体激光器,实现了器件室温准连续工作（脉冲宽度为50 μs,重复频率为1000 Hz）,并对器件的伏安特性、光输出特性、发射光谱,以及器件的远场发射特性等进行了实验测试.器件阈值电流为460mA,器件的最大光输出功率为100mW,发射波长为978.6nm, 光谱半功率全宽度为1.0 nm,远场发散角小于10°,垂直方向的发散角θ_⊥为8°,水平方向的发散角θ_∥为9°,基本为圆形对称光束.     

低远场发散角976 nm基横模脊形半导体激光器

采用非对称大光腔外延结构设计制备出976 nm InGaAs/GaAsP应变补偿量子阱脊形半导体激光器,通过对外延结构的设计优化,以实现器件低远场发散角、低功耗的基横模稳定输出。所制备基横模脊形半导体激光器的脊宽为5μm、腔长为1500μm,在25℃测试温度下,可获得422 mW最大连续输出功率,峰值波长为973.3 nm,光谱线宽（FWHM）为1.4 nm。当注入电流为500 mA时,垂直和水平远场发散角（FWHM）分别为24.15°和3.90°。在15～35℃测试温度范围内对脊形半导体激光器的水平远场发散角进行测试分析,发现随着测试温度的升高,器件远场分布变化较小,水平远场发散角基本维持在3.9°左右。     

高峰值功率808nm垂直腔面发射激光器列阵

为了实现808 nm垂直腔面发射激光器(VCSEL)的高功率输出,对808 nm VCSEL的分布式布拉格反射镜(DBR)结构材料进行了优化设计,分析了AlxGa1-xAs材料中Al组分对于折射率与吸收的影响,并最终确定了材料。采用非闭合环结构制备了2×2 VCSEL列阵。通过波形分析法对VCSEL列阵的功率进行了测量:在脉冲宽度为20 ns、重复频率为100 Hz、注入电流为110 A的条件下,最大峰值功率为30 W;在脉冲宽度为60 ns、重复频率为100 Hz、注入电流为30 A的条件下,最大功率为9 W。对列阵的近场和远场进行了测量,激光器垂直发散角和水平发散角半高全宽分别为16.9°和17.6°。     

面发射分布反馈半导体激光器及光栅耦合半导体激光器

阐述了以曲线光栅面发射分布反馈半导体激光器（SEDFB）为代表的SE—DFB器件的原理和结构,讨论了它们的性能和特点并与其他类型的半导体激光器进行了比较。指出依靠曲线光栅特殊的衍射特性,可实现对模式的控制和二维漏模耦合阵列化出光,得到窄线宽（典型值0．08nm）、小发散角（典型值0．5mrad）、高亮度（单管近衍射极限3W（CW））和大功率（单管最高73w,列阵为kW级）的激光。综述了SE—DFB的发展历程、现状及未来的发展趋势,强调由于曲线光栅耦合SE—DFB激光器兼具边发射和面发射器件的优势和诸多其他优秀性能,将其应用于不同材料体系,不同结构的半导体激光器及其阵列,制作不同波段的高功率、高光束质量的SEDFB器件会有很好的研究意义和应用前景。     

808nm大孔径垂直腔面发射激光器研究

垂直腔面发射激光器(VCSEL)中的载流子聚集效应使注入到有源区的工作电流只是通过边缘环形区域很窄的通道,激光功率密度分布不均匀;尤其当器件尺寸较大时,激射光斑呈现环状,环中间光强很弱.这是研制电抽运高功率大尺寸VCSEL尤为突出的技术难题.采用新型结构成功研制出808 nm波段高功率大孔径VCSEL,在注入电流为1A时,室温下连续输出功率达0.3 W. 关键词： 半导体激光器 垂直腔面发射激光器 高功率 大孔径     

Localization of plasma in the extended hollow cathode of a ribbon-electron-beam plasma source at forevacuum pressures

The results of a study of the plasma density distribution in the slit aperture of a right-angled extended hollow cathode used in a ribbon-electron-beam plasma source operating at forevacuum pressures (1–10 Pa) are presented. It is shown that a local peak of plasma density appears in some region of the slit aperture as the slit width is decreased. This results in the appearance of a region of increased current density when the ribbon beam forms. The uniformity of the beam current density distribution is additionally disturbed by the reverse ion flow whose effect on the emission properties of the plasma is significant in the region of elevated pressure. A model which describes the development of plasma density nonuniformity in a hollow cathode is proposed which is based on the idea that the electron current flows predominantly through the slit aperture regions that are associated with local openings of the cathode layer ion sheaths. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 3–9, June, 2007.     

电流孔的尺寸对双氧化限制垂直腔面发射激光器阈值的影响

通过双氧化限制垂直腔面发射激光器中电场、载流子密度、光场和热场空间耦合方程自洽数值求解,研究了垂直腔面发射激光器中阈值特性.得到了氧化层及有源区附近的电势,模拟电流孔的边缘效应,给出了不同双氧化限制电流孔半径下阈值电流密度、载流子密度、基模光场和热场的空间分布.发现了实现最小阈值电流的最佳限制电流孔半径,进而设计了双氧化限制垂直腔面发射激光器的结构. 关键词： 双氧化限制垂直腔面发射激光器 自洽 阈值     

Plasma localization in an extended hollow cathode of the plasma source of a ribbon electron beam

The plasma density distributions in the slit aperture of the extended rectangular hollow cathode of the source of a ribbon electron beam are investigated experimentally. It is found that a local maximum whose parameters are determined by the discharge current appears in the density distribution when the slot width is less than a certain threshold value. This maximum results in an inhomogeneous current density distribution in the beam. It is shown that the appearance of the local maximum in the plasma density is related to the overlapping of the ion sheaths in the slit aperture of the hollow cathode.     

Multiaspect Aperture Synthesis

A novel kind of aperture synthesis, called the multiaspect aperture synthesis, is proposed for far-field reconstruction of a moving noise source from near-field measurements by a receiving array of finite length comparable with the source length. This kind of aperture synthesis is based on certain characteristics of the near-field spatial correlation function which is sensitive to the current locations of the source and the receiving system. The statistical characteristics of the reconstructed far-field pattern, as well as the effects of noise spectral power density bandwidth and the source velocity on the reconstructed source characteristics are studied. The corresponding numerical simulations are performed.     

Zur Theorie einer Klasse von Beugungsproblemen mittels singulärer Integralgleichungen. V Hochfrequenz-Beugung ebener elektromagnetischer Wellen an einer ideal leitenden Kreisblende

The high-frequency diffraction of a plane electromagnetic wave by a circular aperture in a infinite plane conducting screen is considered at normal incidence. The asymptotic solution of the singular integral equation for the Fourier-transform of the current density on the screen is found by means of elementary function-theoretic methods. Five terms of the high-frequency development of the transmission coefficient are given.     

非傍轴衍射光束横截面上的光强及其能量传输

运用角谱表示的矢量衍射理论,以平面波微小圆孔的非傍轴衍射为例,给出了垂直于光束传输方向的横截面上不同定义的三种光强（传统光强I、功率密度Jz、时间平均能流密度矢量的z分量〈Sz〉）的计算公式,并进行了详细的数值计算和比较研究.指出对微小孔衍射的能量传输,必须考虑光场的矢量特性.应用能流密度矢量S和功率流密度矢量J,分别计算了微小孔非傍轴衍射的透射系数,得到了一些新的结论.     

端窗透射微型X光管的结构优化

为了得到场约束方式下,金属陶瓷封装端窗透射微型X光管发射电流的最大化和焦斑尺寸的最小化,对热阴极发射体的几何结构进行仿真计算,为设计实物模型提供技术方案。首先,从理论上推导了直热式阴极发射体、发射电流密度与几何结构的关系,其次讨论了有限积分算法在求解电场分布数值解过程中的离散化思路,最后利用CST粒子工作室软件,建立了几何模型,对阴极发射体的几何结构进行了优化。在灯丝距离控制极0.4 mm、控制极开孔直径为0.6 mm的位置,能够得到较小的焦斑和较高的电荷密度分布。试制的阴极发射体最大发射电流可达85 A。     

Structure optimisation of modern GaAs-based InGaAs/GaAs quantum-dot VCSELs for optical fibre communication

Room-temperature (RT) continuous-wave (CW) performance of modern 1300-nm oxide-confined In(Ga)As/GaAs quantum-dot (QD) vertical-cavity surface-emitting diode lasers (VCSELs) taking advantage of many QD sheets is investigated using our comprehensive self-consistent simulation model to suggest their optimal design. Obviously, quantum dots should be as uniform as possible and as dense as possible to ensure high enough optical gain. Besides, our simulation reveals that efficient and uniform current injection into VCSEL active regions necessary to enhance excitation of the desired fundamental LP₀₁ mode is accomplished in the VCSEL configuration with the broad-area bottom contact and the ring upper one as well as with the oxide aperture localized within the first period of the upper p-type DBR. The doping of the DBR mirrors is chosen as a compromise between their high enough electrical conductivity and low enough free-carrier absorption. The oxide aperture is additionally introducing the radial optical waveguiding. Moreover, our analysis has been concluded that VCSEL active regions should be composed of at least 9 QD sheets to acquire efficient RT CW operation. Furthermore, rather longer optical cavities are recommended in this case because localization of QD sheets should be adjusted to the anti-node positions of the optical cavity standing wave.     

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm². The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.