Changes in the refractive index of fused silica due to implantation of transition-metal ions

The changes in the refractive index of high purity silica glass produced by implantation of Ti⁺, Cr⁺, Mn⁺, Fe⁺ and Cu⁺ ions at 160 keV were measured using ellipsometry at a wavelength of 633 nm. Implantation doses ranged from 10¹⁵ to 6 × 10¹⁶ ions cm⁻². At the highest doses, a relative increase in refractive index of approximately 15% for implanted Cu ions and an increase of about half that for implanted Cr, Mn and Fe ions are observed. These variations in index probably result from colloid formation. For implanted Ti, virtually no change in the measured index of refraction was observed even at the highest doses.     

Comparative analysis of characteristics of Si, Mg, and undoped GaN

We have grown undoped, Si- and Mg-doped GaN epilayers using metalorganic chemical vapor deposition. The grown samples have electron Hall mobilities (carrier concentrations) of 798 cm²/V s (7×10¹⁶ cm⁻³) for undoped GaN and 287 cm²/V s (2.2×10¹⁸ cm⁻³) for Si-doped GaN. Mg-doped GaN shows a high hole concentration of 8×10¹⁷ cm⁻³ and a low resistivity of 0.8 Ω cm. When compared with undoped GaN, Si and Mg dopings increase the threading dislocation density in GaN films by one order and two orders, respectively. Besides, it was observed that the Mg doping causes an additional biaxial compressive stress of 0.095 GPa compared with both undoped and Si-doped GaN layers, which is due to the incorporation of large amount of Mg atoms (4–5×10¹⁹ cm⁻³).     

Effects of ion implantation on intermediate range order: IR spectra of silica

The reflectance spectra of ion implanted SiO₂ glasses has been measured from 5000 cm⁻¹ to 400 cm⁻¹. The silica was implanted with Ti, Cr, Mn, Fe, Cu and Bi to nominal doses ranging from 1×10¹⁵ ions/cm² to 1.2×10¹⁷ ions/cm² at an energy of 160 keV and currents of approximately 2.6 μA/cm². Changes in the intensity of the 1232 cm⁻¹ and 1015 cm⁻¹ vibrational modes are attributed to changes in the intermediate range order (IRO) and to changes in the concentration of non-bridging oxygen (NBO) defects in the implanted layer. These changes are ion and dose dependent. The differing effects on IRO and NBO are attributed to the chemical interaction of the implanted ions with the substrate.     

SiC epitaxial layer growth in a novel multi-wafer vapor-phase epitaxial (VPE) reactor

Experimental results are presented for SiC epitaxial layer growths employing a unique planetary SiC-VPE reactor. The high-throughput, multi-wafer (7×2″) reactor, was designed for atmospheric and reduced pressure operation at temperatures up to and exceeding 1600°C. Specular epitaxial layers have been grown in the reactor at growth rates ranging from 3–5 μm/h. The thickest layer grown to date is 42 μm thick. The layers exhibit minimum unintentional n-type doping of 1×10¹⁵ cm⁻³, and room temperature mobilities of 1000 cm²/V s. Intentional n-type doping from 5×10¹⁵ cm⁻³ to >1×10¹⁹ cm⁻³ has been achieved. Intrawafer layer thickness and doping uniformities (standard deviation/mean at 1×10¹⁶ cm⁻³) are typically 4 and 7%, respectively, on 35 mm diameter substrates. Moderately doped, 4×10¹⁷ cm⁻³, layers, exhibit 3% doping uniformity. Recently, 3% thickness and 10% doping uniformity (at 1×10¹⁶ cm⁻³) has been demonstrated on 50 mm substrates. Within a run, wafer-to-wafer thickness deviation averages 9%. Doping variation, initially ranging as much as a factor of two from the highest to the lowest doped wafer, has been reduced to 13% at 1×10¹⁶ cm⁻³, by reducing susceptor temperature nonuniformity and eliminating exposed susceptor graphite. Ongoing developments intended to further improve layer uniformity and run-to-run reproducibility, are also presented.     

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

Heavily carbon-doped p-type In_xGa_1−xAs (0≤x<0.49) was successfully grown by gas-source molecular beam epitaxy using diiodomethane (CH₂I₂), triethylindium (TEIn), triethylgallium (TEGa) and AsH₃. Hole concentrations as high as 2.1×10²⁰ cm⁻³ were achieved in GaAs at an electrical activation efficiency of 100%. For In_xGa_1−xAs, both the hole and the atomic carbon concentrations gradually decreased as the InAs mole fraction, x, increased from 0.41 to 0.49. Hole concentrations of 5.1×10¹⁸ and 1.5×10¹⁹ cm⁻³ for x = 0.49 and x = 0.41, respectively, were obtained by a preliminary experiment. After post-growth annealing (500°C, 5 min under As₄ pressure), the hole concentration increased to 6.2×10¹⁸ cm⁻³ for x = 0.49, probably due to the activation of hydrogen-passivated carbon accepters.     

Quantum transport measurements on Si δ- and slab-doped In0.53Ga0.47As grown by molecular beam epitaxy

A series of high quality δ-doped In_0.53Ga_0.47As samples have been grown lattice matched to InP with design doping densities in the range 2×10¹² to 5×10¹² cm⁻². Analysis of the individual sub-band densities deduced from the Shubnikov-De Haas effect shows that both spreading and amphoteric behaviour increase with doping density.     

Ionic transport and defect structure of vitreous beryllium fluoride

Vitreous BeF₂ was prepared by two techniques; (1) remelting of a technical grade material, and (2) vacuum distillation/fluoridation. Infrared spectroscopy studies have established that the first material contains about 0.5 wt.% hydroxyl, predicted to be coherently incorporated into the vitreous network as edge-linked [Be(OH)₄]²⁻ units. The distilled BeF₂ is water-free. The dc electrical conductivity of the remelted BeF₂ was measured as σ = (7.9 × 10³/T) exp(−24500 cal/mol/RT) ω⁻¹ cm⁻¹ and for the distilled BeF₂ as σ = (3.0 × 10⁵/T) exp(−36700 cal/mol/RT ω⁻¹ cm⁻¹ at temperatures to 280°C. Ionic transport studies utilizing a dc electrolysis polarization technique with N₂−F₂ and H₂−HF gas electrodes have demonstrated that the fluorine ion is the transport species. A general model for fluorine transport is proposed based upon a modified anti-Frenkel defect model. The difference in the fluorine transport process for the undistilled grade of BeF₂ is seen as a consequence of the anti-Frenkel defect pair interaction with the [Be(OH)₄[²⁻ groupings.     

The role of spin-spin interaction in the electrical conductivity of vanadium phosphate glasses

Representative glass series of different vanadium content and valence state have been studied with special emphasis on V⁴⁺−V⁴⁺ spin-spin interaction. From temperature dependent EPR studies paramagnetic Curie temperatures and J values have been determined. We demonstrate that this method is informative in the whole glass formation range. It is shown that there is an antiferromagnetic → ferromagnetic transition at c = V⁴⁺/(V⁴⁺ + V⁵⁺) 0.17 (2.3×10²¹ spin cm⁻³). At this composition the glass is essentially homogeneous and displays maximal conductivity. In glasses of higher V⁴⁺ content, in which the dominating interaction is ferromagnetic, the conductivity gradually decreases. Therefore, ferromagnetically coupled V⁴⁺ − V⁴⁺ pairs seem to contribute to conductivity less effectively.     

Optical properties of hydrogenated amorphous silicon films doped with fluorinated gases

Doped amorphous silicon films were prepared by plasma-enhanced chemical vapour deposition of silane and hydrogen mixtures, using phosphorus pentafluoride (PF₅) and boron trifluoride (BF₃) as dopant precursors. The films were studied by UV-vis spectroscopy and their photo and dark conductivity were measured, the latter as a function of temperature. The optical gap of the n-type samples, doped with PF₅, diminished as the concentration of this gas in the plasma was increased. However, the optical gap of p-type samples, doped with BF₃, did not show any appreciable optical gap decrease as the concentration of BF₃ was varied from 0.04% to 4.7%. The dark conductivity of the p-type films at these extremes of the doping range were 7.6 × 10⁻¹⁰ and 3.5 × 10⁻¹ Ω⁻¹ cm⁻¹, respectively.     

Effects of ArF excimer irradiation on single energy and multi energy Ge ion implanted silica

Some of the effects of ArF excimer irradiation on the optical bands produced by single energy (4 MeV) and multi energy (highest energy 4 MeV) Ge implantations in silica (Type III) have been determined. Ge ions were implanted at 4 MeV with nominal doses of 1.25, 2.5 and 5.0×10¹⁵ ions/cm². A second series of samples was made using implant energies ranging from 4 to 0.7 MeV. The doses at each energy were varied to maintain an approximate constant implant species concentration with the total number of ions implanted being 10×10¹⁵ and 5×10¹⁵ cm⁻² for concentrations of 0.042 and 0.021 at.%, respectively. The optical absorption was measured from 2.8 to 6.5 eV. The absorption of samples was then measured after 6.4 eV ArF excimer radiation with a fluence of 44 mJ/cm² per pulse for pulse totals of 3, 11 and 31. We fit the observed spectra for the as-implanted samples and the samples after each ArF exposure to the minimum number of bands attributed to intrinsic states in SiO₂ required to fit the data within ±2%. The magnitude and response of these absorption bands to the ArF irradiation was a function of dose and implant conditions.     

Multiple-step annealing for 50% enhanced p-conductivity of GaN

In this article, multiple-step rapid thermal annealing (RTA) processes for the activation of Mg doped GaN are compared with conventional single-step RTA processes. The investigated multiple-step processes consist of a low temperature annealing step at temperatures between 350°C and 700°C with dwell times up to 5 min and a short time high temperature step. With optimized process parameters, and multiple-step processes, we achieved p-type free carrier concentrations up to 1–2×10¹⁸ cm⁻³. The best achieved conductivity, so far, lies at 1.2 Ω⁻¹ cm⁻¹. This is a 50% improvement compared to conventional single-step process at 800°C, 10 min.     

Oscillator strength of the infrared absorption band near 1080 cm in SiO2 films

It has been well known that the absorption maximum of the peak near 1080 cm⁻¹ in amorphous SiO₂ films shifts continuously with variation of thickness and properties such as stress. This is a first report on the oscillator strength of the absorption against frequency at the absorption maximum. SiO₂ films on silicon wafers were prepared by thermal growth in either dry O₂ or an O₂/H₂ mixture or liquid-phase deposition in HF saturated with silica gel. The oscillator strength continuously decreased from 1×10⁻⁴ down to 1×10⁻⁵ with the frequency shift from 1099 to 1063 cm⁻¹.     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

Optical third-harmonic generation from some high-index glasses

Optical third-harmonic generation from some high-index glasses was investigated. The highest χ⁽³⁾ was obtained from As₂S₃ glass 2.2 × 10⁻¹² esu/ This value was 100 times higher than that of pure SiO₂ glass and comparable with that of the polymer with monomer-doping, which are known as organic materials with quite high χ⁽³⁾. From the relationship between χ⁽³⁾ and composition, sulfide glasses were found to have higher χ⁽³⁾ than oxide or semiconductor-doped oxide glasses with similar refractive indices.     

Blue-green laser diode grown by photo-assisted MOCVD

Operation of the first blue-green laser diode grown by metalorganic chemical vapor deposition has been demonstrated at 77 K under pulsed current injection. The precursors were dimethylzinc, dimethylcadmium, diethylsulfide, bismethyl-cyclopentadienyl-magnesium, and dimethylselenide. Diisopropylamine and ethyliodide were used for a p-type and n-type doping under irradiation with ultraviolet light generated by a high-pressure mercury lamp, respectively. A 1 × 10¹⁸ cm⁻³ nitrogen-atom concentration, which was measured by secondary ion mass spectroscopy, was obtained in the p-ZnSe contact layer. The 4.2 K photoluminescence spectrum was dominated by strong donor-acceptor pair emission and the net acceptor concentration was 1.4 × 10¹⁶ cm⁻³.     

Diode characteristics of Li3N-diffused ZnSe grown by MOVPE

We have fabricated a ZnSe diode using Li₃N diffusion technique for the purpose of forming p-type ZnSe. The maximum hole concentration in the Li₃N-diffused ZnSe layer, which has been grown on a GaAs substrate by metalorganic vapor phase epitaxy, was as high as 10¹⁸ cm⁻³. The ohmic contact to the p-type ZnSe has been demonstrated and the specific contact resistance of Au/p-ZnSe was 1 × 10⁻² Ω · cm². The Li₃N diffusion technique is useful for the bfabrication of ohmic contacts to p-ZnSe.     

Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties

Nitrogen-doped ZnO films were deposited on silicon (1 0 0) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of 10¹⁸ cm⁻³, hole mobility of 10² cm² V⁻¹ s⁻¹ and resistivity of 10⁻² Ω cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed.     

Formation of oxygen-deficient type structural defects and state of ions in SiO2 glasses implanted with transition metal ions

The properties and concentrations of oxygen-deficient type structural defects in type III SiO₂ glasses implanted with Ti⁺, Cr⁺, Mn⁺, Fe⁺, or Cu⁺ to doses from 0.5×10¹⁶ to 6×100¹⁶ ions/cm² at an energy of 160 keV have been measured by using vacuum UV and EPR spectroscopies. An intense absorption band centered around 7.5 eV is observed in all the samples except for Cu-implanted ones and is attributed primarily to Si---Si homo-bonds with the bond distance close to that of the Si₂H₆ molecule. The homo-bond and implanted ion concentrations are of the same order of magnitude in the implanted layers. An E′ type center associated with the homo-bond is observed in all the samples except for Cu-implanted ones. Anomalous behaviors of the Cu-implanted samples are attributed to the formation of Cu-colloids. An enhanced formation of metallic particles or colloids is suggested for the samples implanted with Cr, Mn or Fe to doses higher than 3×10¹⁶ ions/cm².     

High-temperature growth of very high germanium content SiGe virtual substrates

We have first of all studied (in reduced pressure–chemical vapour deposition) the high-temperature growth kinetics of SiGe in the 0–100% Ge concentration range. We have then grown very high Ge content (55–100%) SiGe virtual substrates at 850 °C. We have focused on the impact of the final Ge concentration on the SiGe virtual substrates’ structural properties. Polished Si_0.5Ge_0.5 virtual substrates were used as templates for the growth of the high Ge concentration part of such stacks, in order to minimize the severe surface roughening occurring when ramping up the Ge concentration. The macroscopic degree of strain relaxation increases from 99% up to values close to 104% as the Ge concentration of our SiGe virtual substrates increases from 50% up to 100% (discrepancies in-between the thermal expansion coefficients of Si and SiGe). The surface root mean square roughness increases when the Ge concentration increases, reaching values close to 20 nm for 100% of Ge. Finally, the field (the pile-up) threading dislocations density (TDD) decreases as the Ge concentration increases, from 4×10⁵ cm⁻² (1–2×10⁵ cm⁻²) for [Ge]=50% down to slightly more than 1×10⁵ cm⁻² (a few 10⁴ cm⁻²) for [Ge]=88%. For [Ge]=100%, the field TDD is of the order of 3×10⁶ cm⁻², however.     

The growth and physics of ultra-high-mobility two-dimensional hole gas on (311)A GaAs surface

We report on the molecular beam epitaxy growth of modulation-doped GaAs-(Ga,Al)As heterostructures on the (311)A GaAs surface using silicon as the acceptor. Two-dimensional hole gases (2DHGs) with low-temperature hole mobility exceeding 1.2×10⁶ cm² V⁻¹ s⁻¹ with carrier concentrations as low as 0.8×10¹¹ cm⁻² have been obtained. This hole mobility is the highest ever observed at such low densities by any growth technique. We also report the first observation of persistent photoconductivity in a 2DHG. An analysis of the number density and temperature dependence of the mobility leads us to conclude that the mobility is limited by phonon scattering above 4 K and interface scattering at lower temperatures.