二氧化锆薄膜表面粗糙度的研究

采用电子束蒸发工艺,利用泰勒霍普森相关相干表面轮廓粗糙度仪,研究了不同基底粗糙度、不同二氧化锆薄膜厚度以及不同的离子束辅助能量下所沉积的二氧化锆薄膜的表面粗糙度。结果表明：随着基底表面粗糙度的增加,二氧化锆薄膜表面粗糙度呈现出先缓慢增加,当基底的粗糙度大于10nm后呈现快速增加的趋势;随着二氧化锆薄膜厚度的增加,其表面均方根粗糙度（RMS）先减小后增大;随着辅助沉积离子能量的增加,其表面粗糙度呈现出先减小后增加的趋势。     

Effect of substrate morphology on the roughness evolution of ultra thin DLC films

The effect of substrate roughness on growth of ultra thin diamond-like carbon (DLC) films has been studied. The ultra thin DLC films have been deposited on silicon substrates with initial surface roughness of 0.15, 0.46 and 1.08 nm using a filted cathodic vacuum arc (FCVA) system. The films were characterized by Raman spectroscope, transmission electron microscope (TEM) and atomic force microscopy (AFM) to investigate the evolution of the surface roughness as a function of the film thickness. The experimental results show that the evolution of the surface morphology in an atomic scale depends on the initial surface morphology of the silicon substrate. For smooth silicon substrate (initial surface roughness of 0.15 nm), the surface roughness decreased with DLC thickness. However, for silicon substrate with initial surface roughness of 0.46 and 1.08 nm, the film surface roughness decreased first and then increased to a maximum and subsequently decreased again. The preferred growth of the valley and the island growth of DLC were employed to interpret the influence of substrate morphology on the evolution of DLC film roughness.     

Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO₂), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material.     

二氧化钛薄膜表面粗糙度研究

为了探究二氧化钛(TiO₂)薄膜表面粗糙度的影响因素, 利用离子束辅助沉积电子束热蒸发技术对不同基底粗糙度以及相同基底粗糙度的K9玻璃完成二氧化钛(TiO₂)光学薄膜的沉积。采用TalySurf CCI非接触式表面轮廓仪分别对镀制前基底表面粗糙度和镀制后薄膜表面粗糙度进行测量。实验表明, TiO₂薄膜表面粗糙度随着基底表面的增大而增大, 但始终小于基底表面粗糙度, 说明TiO₂薄膜具有平滑基地表面粗糙的作用; 随着沉积速率的增大, 薄膜表面粗糙度先降低后趋于平缓; 对于粗糙度为2 nm的基底, 离子束能量大小的改变影响不大, 薄膜表面粗糙度均在1.5 nm左右; 随着膜层厚度的增大, 薄膜表面粗糙度先下降后升高。     

对TiO2亲水特性有决定性影响的物理因素

影响TiO2薄膜亲水性的三种物理特性有——表面形貌、表面粗糙度、表面颗粒大小。本文中使用电子束蒸发法制备TiO2薄膜,使用AFM、静态接触角检测对不同厚度的TiO2薄膜的物理特性以及亲水特性进行了分析。结果显示,相较于薄膜表面的颗粒尺寸及表面粗糙度,薄膜表面形貌对TiO2薄膜亲水特性有着更重要的影响。     

对TiO2亲水特性有决定性影响的物理因素

影响TiO2薄膜亲水性的三种物理特性有——表面形貌、表面粗糙度、表面颗粒大小。本文中使用电子束蒸发法制备TiO2薄膜,使用AFM、静态接触角检测对不同厚度的TiO2薄膜的物理特性以及亲水特性进行了分析。结果显示,相较于薄膜表面的颗粒尺寸及表面粗糙度,薄膜表面形貌对TiO2薄膜亲水特性有着更重要的影响。     

Fe/Al混合膜的PLD法制备及表面分析

 采用脉冲激光气相沉积（PLD）技术制备了Fe/Al混合膜,测量了该混合膜的光电子能谱（XPS）,并采用原子力显微镜（AFM）、扫描电子显微镜（SEM）对Fe/Al混合膜作了表面分析。结果表明：Fe/Al混合膜的表面粗糙度对衬底温度有明显的依赖性, 随着衬底温度的升高,薄膜的表面逐渐变得平滑,膜层变得致密,在200 ℃衬底温度下制得了均方根（rms）粗糙度为0.154 nm、具有原子尺度光滑性的Fe/Al混合膜, 膜中Fe和Al分布比较均匀,其成分比约为1∶3,同时XPS分析也表明Fe/Al混合膜暴露在空气中后表面形成了Al₂O₃和FeO氧化层。     

Fe/Al混合膜的PLD法制备及表面分析

采用脉冲激光气相沉积（PLD）技术制备了Fe/Al混合膜,测量了该混合膜的光电子能谱（XPS）,并采用原子力显微镜（AFM）、扫描电子显微镜（SEM）对Fe/Al混合膜作了表面分析。结果表明：Fe/Al混合膜的表面粗糙度对衬底温度有明显的依赖性, 随着衬底温度的升高,薄膜的表面逐渐变得平滑,膜层变得致密,在200 ℃衬底温度下制得了均方根（rms）粗糙度为0.154 nm、具有原子尺度光滑性的Fe/Al混合膜, 膜中Fe和Al分布比较均匀,其成分比约为1∶3,同时XPS分析也表明Fe/Al混合膜暴露在空气中后表面形成了Al2O3和FeO氧化层。     

Surface roughness characterization of Al-doped zinc oxide thin films using rapid optical measurement

Transparent conductive oxide thin films have been widely investigated in photoelectric devices such as flat panel display (FPD) and solar cells. Al-doped zinc oxide (AZO) thin films have been widely employed in FPD. Measuring the surface roughness of AZO thin films is important before the manufacturing of photoelectric device using AZO thin films because surface roughness of AZO thin films will significantly affect the performance of photoelectric device. Traditional methods to measure surface roughness of AZO thin films are scanning electron microscopy and atomic force microscopy. The disadvantages of these approaches include long lead time and slow measurement speed. To solve this problem, an optical inspection system for rapid measurement of the surface roughness of AZO thin films is developed in this study. It is found that the incident angle of 60° is a good candidate to measure the surface roughness of AZO thin films. Based on the trend equation y=−3.6483x+2.1409, the surface roughness of AZO thin films (y) can be directly deduced from the peak power density (x) using the optical inspection system developed. The maximum measurement-error rate of the optical inspection system developed is less than 8.7%.The saving in inspection time of the surface roughness of AZO thin films is up to 83%.     

聚酰亚胺薄膜表面粗糙度的影响因素

采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

Surface structure influences on the absorptance of thick silver films

Thick Ag films were prepared on mica in UHV, and their absorptance was determined in situ for 260 < λ < 1300 nm. The surface structure was varied by variing thicknesses and by annealing, and was investigated by means of electron microscopy. For the Drude region values of the p-factor resulted between 0 and 1. Surface structure parameters were calculated by fitting the roughness induced surface plasmon peak to the theory of Kretschmann/Kröger with a Peklenik correlation function. It is shown that even at 300 K the roughness structure varies markedly with increasing age of the films. References to a surface roughness dependence of the interband absorption are found in the spectra.     

聚酰亚胺薄膜表面粗糙度的影响因素

 采用热蒸发气相沉积聚合方法（VDP）制备了聚酰亚胺(PI)薄膜,研究了设备、衬底温度、升温过程和单体配比因素对PI薄膜表面形貌的影响。利用干涉显微镜和扫描电镜对薄膜表面形貌进行了分析;利用原子力显微镜测定了薄膜表面粗糙度。结果表明：设定蒸发源-衬底距离为74 cm时可成连续膜;蒸发源采用一段升温和多段升温时,膜表面均方根粗糙度分别为291.23 nm和61.99 nm;采用细筛网可防止原料的喷溅;均苯四甲酸二酐和4,4′-二氨基二苯醚（PMDA和ODA）单体沉积速率比值为0.9∶1时,膜表面均方根粗糙度值可减小至3.30 nm;沉积衬底温度保持30 ℃左右时,膜表面均方根粗糙度为4.01 nm, 随温度的上升,膜表面质量会逐渐变差。     

Refracted X-ray Fluorescence (RXF) on Si single crystal and GaAs

The Refracted X-ray Fluorescence (RXF) method can obtain the information about surfaces and interfaces: for example, surface electron density, chemical condition and surface roughness. We evaluated surfaces and interfaces of ultrathin films by using RXF method, and we measured the average lattice constant of a ultrathin GaAs film, the top-layer of a GaAs substrate and the surface roughness of the Si substrate below a ultrathin GaAs film grown by MBE.     

Surface roughness analysis and magnetic property studies of nickel thin films electrodeposited onto rotating disc electrodes

Ni films were electrodeposited onto polycrystalline gold substrates mounted on a rotating disc electrode. The effects of rotation speed, film thickness and current density on the kinetic roughening and magnetic properties of the films were investigated. The film surface roughness was imaged using an atomic force microscope (AFM). The results indicate that the film roughness increases as the film thickness or deposition current density increases. We found that the electrodeposited Ni films exhibit anomalous scaling since both local and large-scale roughnesses show a power-law dependence on the film thickness. The effect of electrode rotation speed on the film surface roughness was also investigated. Scanning electron microscopy studies (SEM) had a good agreement with the AFM results. The average crystalline size of the film surfaces is also calculated from X-ray line broadening using (220) peak and Debye–Scherrer formula. The obtained results agree with that of AFM and SEM. The Ni thin films which are grown at different deposition current densities and rotation speeds exhibit in-plane magnetization with coercivities less than 110 Oe.     

Rapid determination of surface roughness of polycrystalline silicon following frontside and backside excimer laser irradiation

Excimer-laser crystallization (ELC) is the most commonly employed technology for fabricating low-temperature polycrystalline silicon (LTPS). Investigations on the surface roughness of polycrystalline silicon (poly-Si) thin films have become an important issue because the surface roughness of poly-Si thin films is widely believed to be related to its electrical characteristics. In this study, we develop a simple optical measurement system for rapid surface roughness measurements of poly-Si thin films fabricated by frontside ELC and backside ELC. We find that the incident angle of 20° is a good candidate for measuring the surface roughness of poly-Si thin films. The surface roughness of polycrystalline silicon thin films can be determined rapidly from the reflected peak power density measured by the optical system developed using the prediction equation. The maximum measurement error rate of the optical measurement system developed is less than 9.71%. The savings in measurement time of the surface roughness of poly-Si thin films is up to 83%. The method of backside ELC is suggested for batch production of low-temperature polycrystalline silicon thin-film transistors due to the lower surface roughness of poly-Si films and higher laser-beam utilization efficiency.     

溶胶-凝胶法制备氧化锌薄膜的压电行为

"采用溶胶-凝胶技术在单晶硅Si(111)上制备了ZnO压电薄膜,并以扫描电镜、X射线衍射仪(XRD)和原子力显微镜(AFM)进行了表征．XRD衍射实验表明ZnO薄膜随着膜厚的增大,其(002)取向逐渐增强;AFM研究了薄膜的表面形貌、粗糙度与晶粒大小的结果表明,ZnO压电薄膜的粗糙度与晶粒寸随着薄膜厚度的增大而减小．粗糙度为2.188~0.914 nm．利用PFM研究压电系数,发现随着薄膜厚度的增加,(002)生长方向增强,压电系数逐渐增大;当力参数小于薄膜的表面粗糙度时,压电系数测量不准确且在较大幅度     

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.     

Roughness evolution of highly ordered nanoporous anodic aluminum oxide films

In this paper, we report on the surface roughness evolution of highly ordered anodic aluminum oxide (AAO) films based on an atomic force microscopy (AFM) study. Root mean square of the surface roughness was measured on AFM images taken from highly ordered AAO films produced by two-step anodization under different conditions including electrolyte type, anodization voltage, and anodization time. Surface roughness of highly ordered AAO films increases step by step through the two-step anodizing process including electropolishing, first-step anodization, dissolution, and second-step anodization. However, increase of the surface roughness is proportional to the anodization voltage and time. The surface roughness of AAO films changes as a function of length scale until it finally approaches a maximum termed the saturation roughness. The variation of roughness of the growth of AAO could be scaled with an anomalous dynamic behavior as it saturates over a critical length scale while the saturation roughness is dependent on the anodizing time and voltage.     

CVD金刚石中的氮对等离子体刻蚀的影响

采用非对称磁镜场电子回旋共振等离子体分别对沉积过程中掺氮和未掺氮的化学气相沉积金刚石膜进行了刻蚀研究, 结果表明: 掺氮制备的金刚石膜的刻蚀主要集中在晶棱处, 经过4h刻蚀后其表面粗糙度由刻蚀前的4.761 μm下降至3.701 μm, 刻蚀对金刚石膜的表面粗糙度的影响较小; 而未掺氮制备的金刚石膜的刻蚀表现为晶面的均匀刻蚀, 晶粒坍塌,刻蚀4h后其表面粗糙度由刻蚀前的3.061 μm下降至1.083 μm. 刻蚀导致表面粗糙度显著降低. 上述差别的主要原因在于金刚石膜沉积过程中掺氮导致氮缺陷在金刚石晶棱处富集, 晶棱处电子发射加强, 引导离子向晶棱运动并产生刻蚀, 从而加剧晶棱的刻蚀. 而未掺氮金刚石膜,其缺陷相对较少且分布较均匀 ,刻蚀时整体呈现为 (111) 晶面被均匀刻蚀继而晶粒坍塌的现象. 关键词： 掺氮 金刚石膜 刻蚀 非对称磁镜场     

微波ECR全方位离子注入制备类金刚石碳膜的结构及摩擦学性能研究

利用微波ECR全方位离子注入技术，在单晶硅（100）衬底上制备类金刚石薄膜.分析结果表明，所制备的类金刚石碳膜具有典型的类金刚石结构特征，薄膜均匀、致密，表面粗糙度小，摩擦系数小.其中，薄膜的结构和性能与氢流量比关系密切，随氢流量比的增加，薄膜的沉积速率减小，表面粗糙度降低，且生成sp³键更加趋向于金刚石结构，表面能 更低，从而使摩擦系数大幅降低. 关键词： 全方位离子注入 类金刚石碳膜 拉曼光谱 摩擦磨损