Ta/Ni/Ta multilayered ohmic contacts on n-type SiC

The interface formation, electrical properties and the surface morphology of multilayered Ta/Ni/Ta/SiC contacts were reported in this study. It was found that the conducting behavior of the contacts so fabricated is much dependent on the metal layer thickness and the subsequent annealing temperature. Auger electron spectroscopy (AES) and X-ray diffraction analyses revealed that Ni₂Si and TaC formed as a result of the annealing. The Ni atoms diffused downward to metal/SiC interface and converted into Ni₂Si layer in adjacent to the SiC substrate. The released carbon atoms reacted with Ta atoms to form TaC layer. Ohmic contacts with specific contact resistivity as low as 3 × 10⁻⁴ Ω cm² have been achieved after thermal annealing. The formation of carbon vacancies at the Ni₂Si/SiC interface, probably created by dissociation of SiC and formation of TaC during thermal annealing, should be responsible for the ohmic formation of the annealed Ta/Ni/Ta contacts. The addition of Ta into the Ni metallization scheme to n-SiC restricted the accumulation of carbon atoms left behind during Ni₂Si formation, improving the electrical and microstructure properties.     

Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate

The presence of a buried, ultra-thin amorphous interlayer in the interface of room temperature deposited Ni film with a crystalline Si(100) substrate has been observed using cross sectional transmission electron microscopy (XTEM). The electron density of the interlayer silicide is found to be 2.02 e/?³ by specular X-ray reflectivity (XRR) measurements. X-ray diffraction (XRD) is used to investigate the growth of deposited Ni film on the buried ultra-thin silicide layer. The Ni film is found to be highly textured in an Ni(111) plane. The enthalpy of formation of the Ni/Si system is calculated using Miedema’s model to explain the role of amorphous interlayer silicide on the growth of textured Ni film. The local temperature of the interlayer silicide is calculated using enthalpy of formation and the average heat capacity of Ni and Si. The local temperature is around 1042 K if the interlayer compound is Ni₃Si and the local temperature is 1389 K if the interlayer compound is Ni₂Si. The surface mobility of the further deposited Ni atoms is enhanced due to the local temperature rise of the amorphous interlayer and produced highly textured Ni film. Received: 2 March 2000 / Accepted: 28 March 2000 / Published online: 11 May 2000     

Local structure of Ni2Si

The local structure around the Ni atom in Ni₂Si has been studied by measuring and analyzing the Extended Energy Loss Fine Structure above the Ni M_2,3 edge. The radial distribution function we found is characterized by the efficiency of the only nearest neighbours Si atoms. We also obtained the phase shift of the Ni-Si pair and the backscattering amplitude.     

X-ray photoelectron spectroscopic studies of nickel-oxygen surfaces using oxygen and argon ion-bombardment

We have studied the surface chemistry of the nickel-oxygen system using both temperature changes and ion bombardment as techniques for elucidating the surface structure. The spectra of metallic Ni, NiO and Ni₂O₃ were characterized from samples prepared directly in the spectrometer. The Ni₂O₃ species could be distinguished from an authentic Ni(OH)₂ sample from both the X-ray photoelectron lines and the Auger transitions. The oxides of NiO and Ni₂O₃ could be prepared by bombardment with low energy (400eV) O₂⁺ ions as well as by exposure of Ni to oxygen at reduced pressure (～ 100 torr). The Ni₂O₃ was found to be present on most nickel-oxygen surfaces except those prepared by exposing Ni to air for many hours at high temperature (> 600°C), indicating that the stability of Ni₂O₃ decreased as the temperature increased. Exposure of both NiO and Ni₂O₃ to 400 eV Ar⁺ ion bombardment caused reduction to metallic Ni. This observation has also been noted for several other oxides and a prediction of whether or not reduction should be observed is presented by examining the free energy of formation of the molecule.     

Characterization of ultrathin nickel layers on Si(111) using RHEED and RBS

Ultrathin nickel layers (0–40 Å) on Si(111) were characterized using reflection high energy electron diffraction (RHEED) in conjunction with high-resolution Rutherford backscattering spectrometry (RBS). RBS shows that Ni, when deposited on Si(111) at 300 K, reacts with the Si to form clusters with an average composition close to Ni₂Si, until the clusters coalesce into a continuous layer. RHEED measurements show that the microstructure of this layer also matches the Ni₂Si composition: the film consists mainly of very fine-grained Ni₂Si crystallites (∼ 15 Å grain size) which are randomly oriented. Additional Ni deposition results in the accumulation of an unreacted fine-grained Ni layer on top of the silicide film.     

Compound formation in Ni/In thin film systems

Interface compound formation in Ni/In film couples has been studied by means of the PAC method using radioactive¹¹¹In probe atoms. Subsequent occurrence of the compounds Ni₁₀In₂₇, Ni₂In₃, NiIn and Ni₃In has been observed after isochronal annealing. Interdiffusion was found to start at temperatures about 250K whereby Ni propagates into the In film.     

Gd-Ni二元系合金相图

本文用X射线衍射及差热分析方法测定了Gd-Ni二元系合金相图。在这个二元系中,观察到如下9个金属间化合物:Gd₃Ni(735℃包晶分解),Gd₃Ni₂。(690℃包晶分解),GdNi(1280℃同成分熔化),GdNi₂(1010℃包晶分解),GdNi₃(1110℃包晶分解),Gd₂Ni₇(1200℃包晶分解),GdNi₄(1270℃ 关键词：     

Surface segregation measurements during electron irradiation

Abstract

The growth of Ni3Si surface films on Ni-12.7at%Si alloys has been measured during lMeV electron irradiation. Stereoscopic techniques were used to determine film thickness from dark field images formed from Ni₃Si superlattice reflections. Parabolic growth kinetics are observed at lower temperatures. However, at higher temperatures, deviations from parabolic kinetics are observed after short irradiation times. Such deviations have not been observed in bulk specimens during bombardment with energetic ions and, therefore, may be due to foil thickness effects.     

Microstructure and properties of Ni–Ni3Si composites by directional solidification

Ni–Ni₃Si composites are prepared by the Bridgman directional solidification technology under different growth conditions, aiming to improve the ductility of the Ni₃Si compound and investigate the relationship between solidification microstructure and the properties. Microstructure of the Ni–Ni₃Si hypoeutectic in situ composites transforms from regular lamellar eutectic to cellular structure then to dendritic crystal with the increase of the solidification rate. Ni–Ni₃Si eutectic composites display regular lamellar eutectic structure at the solidification rate R=6.0–40.0 μm/s and the lamellar spacing is decreased with the increase of the solidification rate. Moreover, the Ni–Ni₃Si hypoeutectic composites present lower micro-hardness than pure Ni₃Si, which indicate Ni–Ni₃Si hypoeutectic composites have higher ductility, whereas the ductility of the Ni–Ni₃Si eutectic composites has scarcely been improved. This is caused by the formation of the metastable Ni₃₁Si₁₂ phase in the Ni–Ni₃Si eutectic composites.     

Initial oxidation of polycrystalline Permalloy surface

X-ray photoelectron spectroscopy (XPS) and work-function measurements were used in combination to investigate the initial steps of Permalloy (Ni₈₀Fe₂₀) oxidation at room temperature. They showed that, after oxygen saturation, the surface is covered by nickel oxide (NiO), nickel hydroxide (Ni(OH)₂) and iron oxides (Fe_xO_y), and there is no preferential oxidation. Iron oxidation proceeds through the formation of FeO (Fe²⁺) followed with Fe₂O₃ growth (Fe³⁺). The oxidation is governed by a dissociative Langmuir-type oxidation: the sticking coefficient is decreasing over oxygen exposure. Oxidation continues by oxygen dissolution into the first layers to form a nano-oxide of about 8 Å in thickness.     

The influence of aliovalent impurities on the oxidation kinetics of nickel at high temperatures

The influence of chromium and sodium on the nickel oxidation kinetics has been studied as a function of temperature (1373-1673 K) and oxygen activity (10−10⁵ Pa O₂), using microthermogravimetric techniques. It has been shown that the oxidation of Ni-Cr and Ni-Na alloys, like that of pure nickel, follows strictly the parabolic rate law being thus diffusion controlled. In agreement with the defect model of Ni_1−yO, it has been found that the oxidation rate of the Ni-Cr alloy is higher than that of pure nickel, the reaction rate is pressure independent and the activation energy of this process is lower. This implies that the concentration of double ionized cation vacancies in a Ni_1−yO-Cr₂O₃ solid solution is fixed on a constant level by trivalent chromium ions, substitutionally incorporated into the cation sublattice of this oxide. In the case of the Ni-Na alloy, on the other hand, the oxidation rate is lower than that of pure nickel, the activation energy is higher and the oxidation rate increases more rapidly with oxygen pressure. These results can again be explained in terms of the doping effect, by assuming that univalent sodium ions dissolve substitutionally in the cation sublattice of nickel oxide.     

Kinetics of Ni2Si growth from pure Ni and Ni(V) films on (111) and (100) Si

The kinetics of Ni₂Si growth from pure Ni and from Ni_0.93V_0.07 films on (111) and (100) silicon has been studied by the combination of He⁺ backscattering, x-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) techniques. The activation energies are 1.5 and 1.0 eV for pure Ni and Ni(V) films, respectively while the pre-exponential factors in Ni(V) are 4–5 orders of magnitude smaller than in the pure Ni case. The variations in the measured rates are related to the different grain size of the growing suicide layers. The vanadium is rejected from the silicide layer and piles up at the metalsilicide interface.     

The corrosion behavior of intermetallic compounds Ni3(Si,Ti) and Ni3(Si,Ti) + 2Mo in acidic solutions

The corrosion behavior of the intermetallic compounds homogenized, Ni₃(Si,Ti) (L1₂: single phase) and Ni₃(Si,Ti) + 2Mo (L1₂ and (L1₂ + Ni_ss) mixture region), has been investigated using an immersion test, electrochemical method and surface analytical method (SEM; scanning electron microscope and EPMA: electron probe microanalysis) in 0.5 kmol/m³ H₂SO₄ and 0.5 kmol/m³ HCl solutions at 303 K. In addition, the corrosion behavior of a solution annealed austenitic stainless steel type 304 was studied under the same experimental conditions as a reference. It was found that the intergranular attack was observed for Ni₃(Si,Ti) at an initial stage of the immersion test, but not Ni₃(Si,Ti) + 2Mo, while Ni₃(Si,Ti) + 2Mo had the preferential dissolution of L1₂ with a lower Mo concentration compared to (L1₂ + Ni_ss) mixture region. From the immersion test and polarization curves, Ni₃(Si,Ti) + 2Mo showed the lowest corrosion resistance in both solutions and Ni₃(Si,Ti) had the highest corrosion resistance in the HCl solution, but not in the H₂SO₄ solution. For instance, it was found that unlike type 304 stainless steel, these intermetallic compounds were difficult to form a stable passive film in the H₂SO₄ solution. The results obtained were explained in terms of boron segregation at grain boundaries, Mo enrichment and film stability (or strength).     

X-ray photoelectron spectroscopy of Ni in Ni–Zn and Ni–Al alloys

X-ray photoelectron spectroscopy measurements on Ni in the alloys Ni, Ni₅₀Zn₅₀, Ni₂₀Zn₈₀ and Ni₅₀Al₅₀ have been made and confirm previous measurements of the band structure. The satellite lines on the Ni 2p and 3s lines are found to be present in the spectra even when the density of 3d states at the Fermi energy is low.     

Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

Silicide formation induced by thermal annealing in Ni/Si thin film system has been investigated using glancing incidence X-ray diffraction (GIXRD) and Auger electron spectroscopy (AES). Silicide formation takes place at 870 K with Ni₂Si, NiSi and NiSi₂ phases co-existing with Ni. Complete conversion of intermediate silicide phases to the final NiSi₂ phase takes place at 1170 K. Atomic force microscopy measurements have revealed the coalescence of pillar-like structures to ridge-like structures upon silicidation. A comparison of the experimental results in terms of the evolution of various silicide phases is presented.     

Investigation on the 773 K isothermal section of Dy–Ni–Si ternary phase diagram by X-ray powder diffraction

The 773 K isothermal section of the Dy–Ni–Si ternary system was investigated and constructed by X-ray powder diffraction in this paper. Eighteen ternary phases (DyNiSi, DyNi₂Si₂, DyNiSi₂, Dy₂Ni₃Si₅, DyNiSi₃, Dy₂NiSi₃, Dy₃Ni₆Si₂, DyNi₁₀Si₂, Dy₄NiSi₇, DyNi₂Si, DyNi₅Si₃, DyNi₄Si, Dy₃NiSi₂, DyNi₆Si₆, Dy₈Ni₃₁Si₁₁, Dy₃Ni₂Si₄, Dy₄Ni₅Si and Dy₉Ni₂Si₁₄) were confirmed to exist in this work. In those ternary phases, Dy₉Ni₂Si₁₄ is a new phase, Dy₂NiSi₃ and Dy₄NiSi₇ have solid solution phenomena and the solid solution ranges are Dy_33.3Ni_14.7–18.7Si_52–48 and Dy₄Ni_0.3–1.2Si_7.7–6.8, respectively. We constructed 14 two phase regions and 52 three phase regions in the Dy–Ni–Si ternary phase diagram at 773 K. Because the phase relation is not very clear between 66.7 and 50 Si at.% in the Dy–Si binary system, we use dot lines to estimate tentative phase regions in this region.     

A photoemission study of the interaction of Ni(100), (110) and (111) surfaces with oxygen

Photoelectron spectroscopic studies of the oxidation of Ni(111), Ni(100) and Ni(110) surfaces show that the oxidation process proceeds at 295 and 485 K in two distinct steps: a fast dissociative chemisorption of oxygen followed by oxide nucleation and lateral oxide growth to a limiting coverage of 3 NiO layers. The oxygen concentration in the 295 K saturated oxygen layer on Ni(111) was confirmed by ¹⁶O(d,p) ¹⁷O nuclear microanalysis. At 295 and 485 K the oxide growth rates are in the order Ni(110) > Ni(111) > Ni(100). At 77 K the oxygen uptake proceeds at the same rate on all three surfaces and shows a continually decreasing sticking coefficient to saturation at ~2.1 layers (based upon NiO). An O 1sb.e. = 529.7 eV is associated with NiO, and O ls b.e.'s of ~531.5 and 531.3 eV can be associated, respectively, with defect oxide (Ni₂O₃) or (in the presence of H₂O) with an NiO(H) species. The binding energies (Ni 2p, O 1s) of this NiO(H) species are similar to those for Ni(OH)₂. Defect oxides are produced by oxidation at 485 K, or by oxidation of damaged films (e.g. from Ar⁺ sputtering) and evaporated films. Wet oxidation (or exposure to air) of clean nickel surfaces and oxides, and exposure of thick oxide to hydrogen at high temperature results in an O 1s b.e. ~531.3 eV species. Nuclear microanalysis ²H(³He,p) ⁴He indicates the presence of protonated species in the latter samples. Oxidation at 77 K yields O 1s b.e.'s of 529.7 and ~531 eV; the nature of the high b.e. species is not known. Both clean and oxidised nickel surfaces show a low reactivity towards H₂O; clean nickel surfaces are ~10³ times less reactive to H₂O than to oxygen.     

First-principles calculations of electronic and magnetic properties of Ni3Pd and Pd3Ni

Results of first-principles calculations of the electronic structure for the ordered compounds Ni₃Pd and Pd₃Ni at the equilibrium volume with L1₂ structure reveal that the Ni atoms carry an enhanced moment and that an induced moment is found on the Pd atoms. The Ni moment is higher in Pd₃Ni, whereas the Pd moment differs only slightly for these compounds. Large bulk moduli are found (341.34 GPa for Ni₃Pd and 314.35 GPa for Pd₃Ni), and an abrupt collapse of the magnetic moment is observed in Pd₃Ni under lattice compression. The results indicate good conductivity for these compounds as well as half-metallicity for Ni₃Pd.     

Effect of oxidation on transformation and deformation behavior in Ni-Ti alloy

Effect of oxidation on transformation and deformation behavior was investigated in Ni-Ti alloy by comparing the as-oxidized specimen and the polished one. Ti's preferable reaction with oxygen results in the compounds such as Ni₃Ti and Ni₄Ti₃, and the Ni-rich region between matrix and oxide. Martensitic transformation did not take place in the Ni-rich region due to the high Ni content while R phase transformation temperature decreased significantly. Oxidation deteriorated the superelasticity due to the formation of the compound as well as the Ni-rich region in which slip deformation occurs instead of induction of martensite.     

Surface oxidation investigation of Ni36Fe32Cr14P12B6 glass using angle resolved XPS

Native oxide and in-situ prepared, dry oxides of Ni₃₆Fe₃₂Cr₁₄P₁₂B₆ metallic glass have been investigated using angle resolved X-ray photoelectron spectroscopy (XPS or ESCA). The core-level binding energies of the various constituents of clean and oxidized samples have been determined accurately. A qualitative as well as quantitative estimation of elements in the outermost surface layers with and without oxidation is given by comparing XPS results obtained at normal and grazing emission angles. Stepwise oxidation leads to growing thickness of the surface oxide layer and to identification of different oxide species. The maximum thickness of the in-situ prepared oxide was determined as 3.5 nm compared to 4.5 nm for the native oxide. The sequence of oxidation is found to be Cr, Fe, B, P and Ni, but only some of the P and Ni atoms in the surface region are oxidized. The oxidation reaction induces diffusion of the constituents in the surface region as monitored by the change of relative intensities of the various peaks. For instance, P and especially Ni are strongly depleted in the oxide layer whereas Fe, Cr, and especially B are enriched. Differences between native and dry oxide have been observed and are discussed. The main difference is the abundance of carbon and oxygen containing species other than oxides in the native layer. Ar⁺ sputtering of the dry oxide layer leads to stochiometric changes in the surface region which are due to preferential sputtering.