掺铒GaN薄膜的背散射/沟道分析和光致发光研究

采用背散射（RBS）/沟道（channeling）分析和傅里叶变换红外光谱（FT-IR）研究了掺铒G aN薄膜的晶体结构和光致发光（PL）特性.背散射/沟道分析结果表明：随退火温度的升高， 薄膜中辐照损伤减少；但当退火温度达到1000℃，薄膜中的缺陷又明显增加.Er浓度随注入 深度呈现高斯分布.通过沿GaN的<0001>轴方向的沟道分析，对于900℃，30min退火的GaN:Er 样品，Er在晶格中的替位率约76％.光谱研究表明：随退火温度的升高，室温下样品的红外P L峰强度增加；但是当退火温度达到100 关键词： GaN Er 离子束分析 光致发光     

掺Er/Pr的GaN薄膜深能级的研究

利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级；GaN注 入Er经900℃,30min退火后的样品出现了四个深能级，能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV；GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ，能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV；对每一个深能级的来源 进行了讨论.光谱研究表明，掺Er的GaN样品经900℃,30min退火后，可以观察到Er的1538nm 处的发光，而且对能量输运和发光过程进行了讨论. 关键词： GaN Er Pr 深能级     

纤锌矿GaN薄膜光学性质的研究

在测试大量纤锌矿GaN外延薄膜透射光谱基础上,通过对有代表性的四个样品的透射光谱进行拟合,获取了GaN外延薄膜的光学常量并计算了薄膜厚度.结果表明:GaN外延薄膜的折射率差异较小,但在370～800 nm波长范围内消光系数差异很大,GaN薄膜的消光系数差异在一定程度上可用以评价外延薄膜的质量.     

溅射制备纳米晶GaN∶Er薄膜的室温发光特性

利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为58nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6—8nm之间;紫外可见谱结果表明在500—700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为322eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er³⁺离子在554nm处的强烈绿光发射. 关键词： 纳米晶GaN薄膜 3+掺杂')" href="#">Er³⁺掺杂 光学带隙 光致发光     

Er/Yb共掺硅酸盐玻璃的光致发光

采用固相反应方法，制备了Er³⁺离子浓度为0.5 at.%，Yb掺杂浓度范围为0.0— 6.0 at.%的Er/Yb共掺激光玻璃，并对激光玻璃的吸收光谱和光致荧光光谱进行了分析.研究 结果显示，Yb³⁺掺杂对Er³⁺在980 nm附近的吸收起到了非常显著的 增强作用.在 980 nm的激光抽运下，激光玻璃在1530 nm处的光致发光强度随着Yb离子浓度 的增加而先增大后减小， 当Yb³⁺离子浓度为Er³⁺离子浓度6倍时光 致发光强度达到最大值.同时还发现了Yb³⁺对Er³⁺的光致荧光光谱 的展宽作用，并讨论了荧光光谱的展宽机理. 关键词： Er/Yb共掺玻璃 光致发光 吸收光谱     

ZnO:Er3+纳米晶的制备及发光性质研究

为了探讨稀土Er3 与纳米ZnO基质之间的能量传递,利用化学方法制备了ZnO:Er3 纳米晶,测量了样品的X射线衍射谱(XRD)、光致发光谱(PL)和激发谱(PLE).X射线衍射结果表明,ZnO:Er3 具有六角纤锌矿晶体结构.室温下,在365 nm激发下,在ZnO宽的可见发射背景上,观测到了Er3 的激发态4S3/2(550 nm),2H11/2(521 nm)和4F5/2(456 nn)的特征发射.分析了ZnO:Er3 纳米晶的带边发射和稀土Er3 的特征发射的峰值强度随掺Er3 浓度的变化关系,比较了ZnO:Er3 与未掺杂的ZnO的光致发射峰值强度的变化,给出了稀土Er3 的激发态4S3/2→4I15/2,2H11/2→4I15/2和4F5/2→4I15/2的发射机制,证实了纳米ZnO基质与稀土Er3 离子之间存在能量传递.     

磁控溅射淀积掺Er富Si氧化硅膜中Er3+ 1.54μm光致发光

用磁控溅射淀积不同富Si程度的掺Er富Si氧化硅薄膜.室温下测量其光致发光谱,观察到各谱中都含有1.54和1.38μm两个发光峰,其中1.54和1.38μm的光致发光峰分别来自Er³⁺和氧化硅中某种缺陷.系统研究了Er³⁺1.54μm光致发光峰强度对富Si程度及退火温度的依赖关系.还发现1.54μm发光峰强度与1.38μm发光峰强度相互关联,对此进行了讨论 关键词： Er 富Si氧化硅 光致发光 纳米硅     

掺镨GaN薄膜的微结构与光致发光

利用背散射／沟道（RBS／C）技术、原子力显微镜（AFM）和光致发光（PL）谱研究了掺镨GaN薄膜的微结构和可见光发光特性。RBS／C结果表明,注入Pr后,在注入层引入了晶格损伤;注入样品经1050℃退火后,部分损伤得到恢复,但是晶体质量没有恢复到注入前的状态。AFM结果表明,注入Pr后,表面凹凸不平,而且在注入区引起了膨胀,膨胀幅度达到23．368nm左右。PL结果表明,在850—1050℃退火,发光强度按e指数增加;当退火温度达到1050℃,发光强度最强,经过数据拟合可得Pr^3＋的热激活能为5．8eV。     

Er3+及Er3+/Yb3+共掺铋酸盐玻璃光谱性质研究

制备了Ed3+及Ed3+/Yb3+共掺铋酸盐玻璃,测试了样品的吸收光谱、荧光光谱.应用Judd-Oflet理论计算了Er3+在铋酸盐玻璃中的光谱强度参数,分别为Ω2=(5.47-2.92)×10-20cm2,Ω4=(2.16-1.22)×10-20cm2,Ω6=(1.29-0.80)×10-20cm2.比较了Er3+及Er3+/Yb3+共掺铋酸盐玻璃在980 nm附近的吸收截面和1.5μm的荧光发射光谱强度,Er3+/Yba+共掺铋酸盐玻璃的荧光光谱半高宽达到91 nm,比Er3+单掺铋酸盐玻璃大15 nm.用McCumber理论计算了Ed3+在1.5 μm的受激发射截面σe=1.00×10-20cm2.比较了Ed3+在不同基质中的光谱特性,结果表明铋酸盐玻璃更适合作为掺铒光纤放大器的基质材料.     

氨化法制备GaN:Tb纳米颗粒的光学性能

利用简单的氨还原方法制备了GaN:Tb纳米颗粒. X射线衍射结果显示纳米颗粒为六方结构, 根据Scherrer公式, 计算得到了GaN:Tb纳米颗粒的平均晶粒大小为21.2 nm; 透射电子显微镜结果显示为GaN:Tb纳米颗粒尺寸均匀, 尺寸大小约为20 nm; 除正常的GaN Raman振动模式外, 还观察到了251和414 cm^-1 2个额外的Raman散射峰, 前者是表面无序或尺寸限制效应造成的, 而后者则是八面体Ga-N₆振动模式; 最后, 测量了GaN:Tb纳米颗粒的室温光致发光谱, 获得了Tb³⁺离子在可见光区(位于493.9, 551.2, 594.4和630.1 nm)的本征发光.     

GGA+U方法研究C-Al掺杂GaN的电子结构和光学性质

本文用密度泛函理论的第一性原理,研究了C单掺、Al单掺、C-Al共掺GaN体系的电子结构及光学性质.通过分析发现,与本征GaN相比,掺杂后体系都发生了晶格畸变,其中C-Al共掺GaN体系,较容易形成且禁带宽度明显减小,形成了P型半导体,显著降低了电子跃迁所需要的能量;另外,该共掺体系的静介电常数最大,极化能力最强,介电虚部的主峰向低能区域偏移,并且吸收光谱在可见光范围内产生了红移现象,这都体现了C-Al共掺可以拓展GaN体系对可见光的响应范围.因此,C-Al共掺将有望提高GaN体系的光催化性能.     

Structural and optoelectronic properties of amorphous GaN thin films

Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room temperature and high vacuum using N ₂ as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct band gap of E _g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive index. The oscillator energy E ₀ and the dispersion energy E _d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined. Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin films was calculated which equalled E _a = 0:434 eV.     

C-Mg掺杂GaN电子结构和光学性质的第一性原理研究

基于密度泛函理论第一性原理的方法,计算了GaN、C单掺、Mg单掺和C-Mg共掺体系的电子结构和光学性质,计算结果表明:掺杂后,GaN体系的晶格发生畸变,有利于光生空穴-电子对的分离,C-Mg共掺体系结构最稳定,掺杂体系的禁带宽度均减小,其中C-Mg共掺体系的禁带宽度最小,在禁带中引入了杂质能级,说明掺杂可有效降低电子跃迁所需的能量.在光学性质方面,掺杂后,GaN在低能区介电峰和吸收峰均发生红移,且静介电常数增大;其中C-Mg共掺体系的对可见光的吸收最强,极化能力最强,因此C-Mg共掺将有望提高GaN在光催化性能和极化能力.     

Sodium beta-alumina thin films as gate dielectrics for A1GaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

<正>Sodium beta-alumina（SBA） is deposited on AlGaN/GaN by using a co-deposition process with sodium and Al₂O₃ as the precursors.The X-ray diffraction（XRD） spectrum reveals that the deposited thin film is amorphous.The binding energy and composition of the deposited thin film,obtained from the X-ray photoelectron spectroscopy（XPS） measurement,are consistent with those of SBA.The dielectric constant of the SBA thin film is about 50.Each of the capacitance-voltage characteristics obtained at five different frequencies shows a high-quality interface between SBA and AlGaN.The interface trap density of metal-insulator-semiconductor high-electron-mobility transistor（MISHEMT） is measured to be（3.5～9.5）×10¹⁰ cm^-2·eV^-1 by the conductance method.The fixed charge density of SBA dielectric is on the order of 2.7×10¹² cm^-2.Compared with the AlGaN/GaN metal-semiconductor heterostructure high-electronmobility transistor（MESHEMT）,the AlGaN/GaN MISHEMT usually has a threshold voltage that shifts negatively. However,the threshold voltage of the AlGaN/GaN MISHEMT using SBA as the gate dielectric shifts positively from—5.5 V to—3.5 V.From XPS results,the surface valence-band maximum（VBM-E_F） of AlGaN is found to decrease from 2.56 eV to 2.25 eV after the SBA thin film deposition.The possible reasons why the threshold voltage of AlGaN/GaN MISHEMT with the SBA gate dielectric shifts positively are the influence of SBA on surface valence-band maximum （VBM-E_F）,the reduction of interface traps and the effects of sodium ions,and/or the fixed charges in SBA on the two-dimensional electron gas（2DEG）.     

Al，Mg掺杂GaN电子结构及光学性质的第一性原理研究

基于密度泛函理论,采用广义梯度近似方法,计算了Al,Mg掺杂的闪锌矿型GaN的电子结构和光学性质,分析了其电子态分布与结构的关系,给出了掺杂前后GaN体系的介电函数和复折射率函数.计算结果表明掺有Mg的GaN晶体空穴浓度增大,会明显提高材料的电导率,而Al掺杂GaN晶体的载流子浓度不变,只是光学带隙变宽;通过分析掺杂前后GaN晶体的介电函数和复折射率函数,解释了体系的发光机理,为GaN材料光电性能的进一步开发与应用提供了理论依据.通过比较可知,所得出的计算结果与现有文献符合得很好. 关键词： GaN晶体 电子结构 光学性质 掺杂     

Investigation of optical properties of modulation doped GaN/AlGaN MQWS nanostructures

Due to many important applications, the group III-nitride semiconductors have recently attracted remarkable attention among the semiconductor researchers and engineers. In this paper, we report on the impact of the extrinsic and temporal carriers on the screening of the polarization internal fields. The optical efficiency of GaN/AlGaN multiple quantum well (MQW) nanostructures were studied by means of photoluminescence (PL) and time-resolved PL measurements. Extrinsic carriers come from Si doping in the barriers while temporal carriers originate when the samples are excited by the laser beam. The emission peaks of MQWs in PL spectra of the undoped and low-doped samples show a shift towards higher energy levels as excitation intensity increases, while the other samples do not exhibit such a phenomenon due to the dominance of the extrinsic carriers. The transient data confirm the results of the PL measurements.     

Effect of annealing on the optical and electrical properties of ZnO:Er films

The effect of dopant concentration and annealing in the oxidizing atmosphere on the structural, optical, and electrical properties of ZnO:Er films deposited on sapphire substrates by the electron-beam evaporation method is investigated. The optical and electrical properties of these films were studied by UV-VIS-IR absorption and reflection spectroscopy, photoluminescence, and resistivity measurements. Experimental results reveal that as-deposited ZnO:Er films have both high transmittance in the visible range and low electrical resistivity and can be used as efficient transparent conducting oxides (TCOs). These films annealed in the oxidizing atmosphere have a visible emission band which can be used to fabricate light-emitting diodes.     

GaN1-xPx薄膜的结构特性研究

用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN1-xPx 薄膜.利用x射线衍射仪和拉曼光谱仪研究了P对GaN1-xPx晶体结构的影响.研究结果表明:随着P组分比的增加,GaN1-xPx(0002)衍射峰逐渐向小角度移动,即晶格常数变大;与非掺杂GaN相比,GaN1-xPx薄膜的拉曼光谱中出现了4个新的振动模式,将它们分别归因于P族团引起的准局部振动模式、Ga-P键振动引起的间隙模,以及来自缺陷引起的无序激活散射.同时,随着P组分比的增加,A1(LO)模式的频率向低频方向移动,这种红移现象起因于合金化和应变的影响.     

Superbright photoluminescence of Er3+ ions in pseudoamorphous GaN thin films

High-intensity Er³⁺ photoluminescence at wavelength λ=1510–1535 nm and with a quantum yield of up to 10% was revealed under nitrogen laser pumping (λ=327 nm) in pseudoamorphous GaN films codoped by Er and oxygen. Because Er³⁺ ions do not have a resonant absorption level at this wavelength, the erbium ions are excited only via inter-and intraband recombination energy transfer. A distinctive feature of the Er³⁺ spectrum is its broadening caused by an appreciable contribution of “hot” transitions from the Stark components of the ⁴ I _13/2 multiplet. At liquid-nitrogen temperature, this contribution is dominant. At 77 K, an instability of the spectrum in the form of optical noise was observed in the 1550-to 1570-nm region. Temperature quenching of the photoluminescence was virtually absent. The high Er³⁺ photoluminescence intensity was achieved through proper choice of the multistage (cumulative) anneal regime.