Micro‐Raman depth profiling of silicon amorphization induced by high‐energy ion channeling implantation

In this work, we study the silicon amorphization dependence on the crystal depth induced by 6‐MeV Al²⁺ ions implanted in the <110> and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high‐energy ion–crystal implantation cases. Accordingly, the micro‐Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10¹⁷ particles/cm². The scanning steps were 0.2 and 0.3 µm, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2‐MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro‐Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high‐energy ion implantation. Copyright © 2013 John Wiley & Sons, Ltd.     

Effect of high‐energy light‐ion irradiation on SI‐GaAs and GaAs:Cr as observed by Raman spectroscopy

The structural evolutions of high‐energy (50 MeV) lithium ion (Li³⁺) irradiated undoped semi‐insulating GaAs (SI‐GaAs) and chromium‐doped SI‐GaAs (GaAs:Cr) were investigated by Raman measurements. It is shown that high‐energy Li³⁺ irradiation causes amorphization beyond a fluence of 3 × 10¹³ ions/cm² in undoped SI‐GaAs. Interestingly, the same fluence of ions does not seem to affect the crystallinity in GaAs:Cr appreciably. The effect of ion irradiation on the change in lattice ordering and anharmonicity of the phonon modes of undoped SI‐GaAs and GaAs:Cr is also compared. Copyright © 2011 John Wiley & Sons, Ltd.     

Multiphonon resonant Raman scattering in N‐doped ZnO

Multiphonon resonant Raman scattering in N‐doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N‐doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect‐induced Raman scattering caused by N‐doping. The nature of the 1LO phonon at 578 cm⁻¹ is interpreted as a quasimode with mixed A₁ and E₁ symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity‐induced two‐LO‐phonon scattering process was clearly observed in N‐doped ZnO. Copyright © 2009 John Wiley & Sons, Ltd.     

Lattice dynamics of Al‐containing MAX‐phase carbides: a first‐principle study

A systematic study on lattice dynamics of M_{n + 1}AlC_n (n = 1–3) phases using first‐principle calculations is reported, where the Raman‐active and infrared‐active (IR) modes are emphasized. The highest phonon wavenumber is related to the vibration of C atoms. The ‘imaginary wavenumber’ in the phonon spectrum of Nb₃AlC₂ contributes to the composition gap in Nb‐Al‐C system (Nb₂AlC and Nb₄AlC₃ do appear in experiments, but there are no experimental reports on Nb₃AlC₂). The full set of Raman‐active and IR‐active modes in the 211, 312, and 413 M_{n + 1}AX_n phases is identified, with the corresponding Raman and IR wavenumbers. The 211, 312, and 413 M_{n + 1}AX_n phases have 4, 6, and 8 IR‐active modes, respectively. There is no distinct difference among the wavenumber ranges of IR‐active modes for 211, 312, and 413 phases, with the highest wavenumber of 780 cm⁻¹ in Ta₄AlC₃. The Raman wavenumbers of M₂AlC phases all decrease with increasing the d‐electron shell number of transition metal M. However, this case is valid only for the Raman‐active modes with low wavenumbers of M₃AlC₂ and M₄AlC₃. Copyright © 2015 John Wiley & Sons, Ltd.     

Orthorhombic YAlO3 – a novel many‐phonon SRS‐active crystal

In single crystals of orthorhombic YAlO₃, widely known as a host‐matrix for Ln³⁺‐lasant ions, many‐phonon stimulated Raman scattering interactions as well as different manifestations of cascaded and cross‐cascaded nonlinear χ⁽³⁾↔χ⁽³⁾ processes are initiated by picosecond laser pulses. The scientific and applicative potential of YAlO₃ crystals is considerably expanded by the demonstration of its SRS properties. In particular, the studies revealed the manifestation of eight χ⁽³⁾‐active vibrational modes. The corresponding Stokes and anti‐Stokes lines have been assigned and the steady‐state Raman gain coefficients related to the strongest phonon mode have been estimated. In addition, a short review presents the stimulated emission channels of its Ln³⁺‐ions together with some χ⁽³⁾‐nonlinear laser properties of crystals belonging to the binary Y₂O₃‐Al₂O₃ system.     

Raman spectroscopy of very small Cd1−xCoxS quantum dots grown by a novel protocol: direct observation of acoustic‐optical phonon coupling

Glass‐embedded Cd_1−xCo_xS quantum dots (QDs) with mean radius of R ≈ 1.70 nm were successfully synthesized by a novel protocol on the basis of the melting‐nucleation synthesis route and herein investigated by several experimental techniques. Incorporation of Co²⁺ ions into the QD lattice was evidenced by X‐ray diffraction and magnetic force microscopy results. Optical absorption features with irregular spacing in the ligand field region confirmed that the majority of the incorporated Co²⁺ ions are under influence of a low‐symmetry crystal field located near to the Cd_1−xCo_xS QD surface. Electron paramagnetic resonance data confirmed the presence of Co²⁺ ions in a highly inhomogeneous crystal field environment identified at the interface between the hosting glass matrix (amorphous) and the crystalline QD. The acoustic‐optical phonon coupling in the Cd_1−xCo_xS QDs (x ≠ 0.000) was directly observed by Raman measurements, which have shown a high‐frequency shoulder of the longitudinal optical phonon peak. This effect is tuned by the size‐dependent sp‐d exchange interaction due to the magnetic doping, causing variations in the coupling between electrons and longitudinal optical phonon. Copyright © 2013 John Wiley & Sons, Ltd.     

Raman spectral probe on increased local vibrational modes and phonon lifetimes in Ho3+‐doped Bi2O3 micro‐rods

We report the appearance and enhancement in intensity of impurity related local vibrational modes in Bi₂O₃ : Ho micro‐rods along with normal modes. Pure and Ho‐doped Bi₂O₃ micro‐rods were synthesized by conventional co‐precipitation method at 60 °C. The structural and morphological studies were carried out using powder X‐ray diffraction technique and scanning electron microscopy, respectively. Raman spectroscopic studies reveal the existence of local phonon vibrational modes (LVM) due to the incorporation of Ho³⁺. Harmonic approximation method was employed to find the dopant‐related peak in the Raman spectra. Variation in full width at half maximum for LVM with increase in Ho³⁺ was also investigated. This increase in FWHM indicates the decrease in crystallinity of the doped samples. The phonon lifetime calculation carried out for each samples and the decrease in phonon lifetime with doping concentration make this material a potential candidate for optical and electronic applications. Copyright © 2016 John Wiley & Sons, Ltd.     

Observation of low‐wavenumber out‐of‐plane optical phonon in few‐layer graphene

Few‐layer graphene grown by chemical vapor deposition has been studied by Raman and ultrafast laser spectroscopy. A low‐wavenumber Raman peak of ~120 cm⁻¹ and a phonon‐induced oscillation in the kinetic curve of electron–phonon relaxation process have been observed, respectively. The Raman peak is assigned to the low‐wavenumber out‐of‐plane optical mode in the few‐layer graphene. The phonon band shows an asymmetric shape, a consequence of so‐called Breit‐Wigner‐Fano resonance, resulting from the coupling between the low‐wavenumber phonon and electron transitions. The obtained oscillation wavenumber from the kinetic curve is consistent with the detected low‐wavenumber phonon by Raman scattering. The origin of this oscillation is attributed to the generation of coherent phonons and their interactions with photoinduced electrons. Copyright © 2012 John Wiley & Sons, Ltd.     

Raman investigation of silicon nanocrystals: quantum confinement and laser‐induced thermal effects

We present a detailed experimental and theoretical Raman investigation of quantum confinement and laser‐induced local thermal effects on hydrogenated nanocrystalline silicon with different nanocrystal sizes (3.6–6.2 nm). The local temperature was monitored by measuring the Stokes/anti‐Stokes peak ratio with the laser power density range from ~120 to 960 kW/cm². In combination with the three‐dimensional phonon confinement model and the anharmonic effect, which incorporates the three‐phonon and four‐phonon decay processes, we revealed an asymmetrical decay process with wavenumbers ~170 and 350 cm^–1, an increasing anharmonic effect with nanocrystal sizes, and a shortening lifetime with enhanced temperature and decreasing nanocrystal dimension. Furthermore, we demonstrated experimentally that for Si nanocrystals smaller than 6 nm, the quantum confinement effect is dominant for the peak shift and line broadening. Copyright © 2011 John Wiley & Sons, Ltd.     

Raman study of Fano interference in p‐type doped silicon

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter‐valence band transitions on the zone center optical phonon in heavily p‐type doped silicon is studied by Raman spectroscopy for a wide range of excitation wavelengths extending from the red (632.8 nm) into the ultra‐violet (325 nm). The asymmetry in the one‐phonon Raman lineshape is attributed to a Fano interference involving the overlap of a continuum of electronic excitations with a discrete phonon state. We identify a transition above and below the one‐dimensional critical point (E = 3.4 eV) in the electronic excitation spectrum of silicon. The relationship between the anisotropic silicon band structure and the penetration depth is discussed in the context of possible device applications. Copyright © 2010 John Wiley & Sons, Ltd.     

Surface disorder in c-Si induced by swift heavy ions

The disorders induced in crystalline silicon (c-Si) through the process of electronic energy loss in the swift heavy ion irradiation were investigated. A number of silicon <1 0 0> samples were irradiated with 65 MeV oxygen ions at different fluences, 1×10¹³ to 1.5×10¹⁴ ions/cm², and characterized by the Raman spectroscopy, the optical reflectivity, the X-ray reflectivity, the atomic force microscopy (AFM) and the X-ray diffraction (XRD) techniques. The intensity, redshift, phonon coherence length and asymmetric broadening associated with the Raman peaks reveal that stressed and disordered lattice zones are produced in the surface region of the irradiated silicon. The average crystallite size, obtained by analyzing Raman spectrum with the phonon confinement model, was very large in the virgin silicon but decreased to<100 nm dimension in the ion irradiated silicon. The results of the X-ray reflectivity, AFM and optical reflectivity of 200–700 nm radiation indicate that the roughness of the silicon surface has enhanced substantially after ion irradiation. The diffusion of oxygen in silicon surface during ion irradiation is evident from the oscillation in the X-ray reflectivity spectrum and the sharp decrease in the reflectivity of 200–400 nm radiation. The rise in temperature, estimated from the heat spike model, was high enough to melt the local silicon surface. The results of XRD indicate that lattice defects have been induced and a new plane <2 1 1> has been formed in the silicon <1 0 0>after ion irradiation. The results of the present study show that the energy deposited in crystalline silicon through the process of electronic energy loss ～0.944 keV/nm per ion is sufficient to induce disorders of appreciable magnitude in the silicon surface even at a fluence of ～10¹³ ions/cm².     

Phonon anomalies and structural transition in spin ice Dy2Ti2O7: a simultaneous pressure‐dependent and temperature‐dependent Raman study

We revisit the assignment of Raman phonons of rare‐earth titanates by performing Raman measurements on single crystals of O¹⁸ isotope‐rich spin ice and nonmagnetic pyrochlores and compare the results with their O¹⁶ counterparts. We show that the low‐wavenumber Raman modes below 250 cm⁻¹ are not due to oxygen vibrations. A mode near 200 cm⁻¹, commonly assigned as F_2g phonon, which shows highly anomalous temperature dependence, is now assigned to a disorder‐induced Raman active mode involving Ti⁴⁺ vibrations. Moreover, we address here the origin of the ‘new’ Raman mode, observed below T_C ~ 110 K in Dy₂Ti₂O₇, through a simultaneous pressure‐dependent and temperature‐dependent Raman study. Our study confirms the ‘new’ mode to be a phonon mode. We find that dT_C/dP = + 5.9 K/GPa. Temperature dependence of other phonons has also been studied at various pressures up to ~8 GPa. We find that pressure suppresses the anomalous temperature dependence. The role of the inherent vacant sites present in the pyrochlore structure in the anomalous temperature dependence is also discussed. Copyright © 2012 John Wiley & Sons, Ltd.     

Size‐dependent evolution of phonon confinement in colloidal Si nanoparticles

A size‐dependent evolution of phonon confinement is revealed in Si nanoparticles (NPs) via Raman spectroscopy. By introducing a variable confinement factor, α, into a well‐known phenomenological phonon confinement model (PCM) developed by Richter et al., acceptable fits are achieved to downshifted and asymmetrically broadened Raman spectra of Si NPs with different diameters, d, from 2.4 nm to 6.3 nm. A comparative study using Raman spectra of colloidal Si NPs, for the first time, shows an apparent positive linear correlation between α and the Si NP size. Based on the PCM, the amplitude of the atomic vibration (phonon) at the real physical boundary of NPs is proportional to e^−α/2, which indicates that the amplitude of the first order optical phonon is relatively larger at the edges for smaller Si nanostructures despite of their stronger phonon confinement weighed by α/d². Copyright © 2015 John Wiley & Sons, Ltd.     

Temperature‐dependent,micro‐Raman spectroscopic study of barium titanate nanoparticles

A comparative, temperature‐dependent (80–500 K at 5 K intervals), micro‐Raman spectroscopic study of 300 and 50 nm diameter ceramic BaTiO₃ nanoparticles was carried out with the purpose of elucidating the nanoparticle size effect on the temperature dependence of the polar and non‐polar phonons. A method for calibrating Raman intensities, along with an iterative spectral fitting algorithm, is proposed for concurrent Raman band position and intensity analysis, increasing the analytical abilities of single temperature point Raman spectroscopy. The 300 nm particles exhibit all three phase transitions, whereas the 50 nm particles do not show evidence of these phase transitions in the same temperature range. The Curie temperature appears to be a phonon converging point, irrespective of the phonon symmetry. An attempt was made to qualitatively relate the temperature‐dependent Raman spectra to complimentary non‐spectroscopic methods, such as heat capacity and X‐ray diffraction studies. The study proves that the temperature‐dependent behavior of the polar phonon, 265 cm⁻¹, can be utilized as a sensitive phase transition probe. Copyright © 2014 John Wiley & Sons, Ltd.     

Tuning of phonon anharmonicity in pyrochlore titanates: temperature‐dependent Raman studies of Sm2Ti2‐xZrxO7 (x=0, 1/2, 3/4, and 2) and stuffed spin‐ice Ho2 + xTi2 − xO7 − x/2 (x=0, 1/3, and 2/3)

Anomalous temperature dependence of Raman phonon wavenumbers attributed to phonon–phonon anharmonic interactions has been studied in two different families of pyrochlore titanates. We bring out the role of the ionic size of titanium and the inherent vacancies of pyrochlore in these anomalies by studying the effect of replacement of Ti^{4 +} by Zr^{4 +} in Sm₂Ti₂O₇ and by stuffing Ho^{3 +} in place of Ti^{4 +} in Ho₂Ti₂O₇ with appropriate oxygen stoichiometry. Our results show that an increase in the concentration of the larger ion, i.e. Zr^{4 +} or Ho^{3 +}, reduces the phonon anomalies, thus implying a decrease in the phonon–phonon anharmonic interactions. In addition, we find signatures of coupling between a phonon and crystal field transition in Sm₂Ti₂O₇, manifested as an unusual increase in the phonon intensity with increasing temperature. Copyright © 2011 John Wiley & Sons, Ltd.     

Microstructured polymer‐based substrates with broadband absorption for surface‐enhanced Raman scattering

Large area (3 × 3 cm²) substrates for surface‐enhanced Raman scattering were fabricated by combining femtosecond laser microstructuring and soft lithography techniques. The fabrication procedure is as follows: (i) femtosecond laser machining is used to create a silicon master copy, (ii) replicates from polydimethylsiloxane are made, and (iii) a 50‐nm‐thick gold film is deposited on the surface of the replicates. The resulting substrates exhibit strongly enhanced absorption in the spectral region of 350 ∼ 1000 nm and generate enhanced Raman signal with enhancement factor of the order of 10⁷ for 10^{‐ 6} M rhodamine 6G. The main advantages of our substrates are low cost, large active area, and possibility for mass replication. Copyright © 2013 John Wiley & Sons, Ltd.     

Poly(vinylpyrrolidone)‐stabilized silver nanoparticles for strained‐silicon surface enhanced Raman spectroscopy

Poly(vinylpyrrolidone)‐stabilized silver nanoparticles deposited onto strained‐silicon layers grown on graded Si_1−xGe_x virtual substrates are utilized for selective amplification of the Si–Si vibration mode of strained silicon via surface‐enhanced Raman scattering spectroscopy. This solution‐based technique allows rapid, highly sensitive and accurate characterization of strained silicon whose Raman signal would usually be overshadowed by the underlying bulk SiGe Raman spectra. The analysis was performed on strained silicon samples of thickness 9, 17.5 and 42 nm using a 488 nm Ar⁺ micro‐Raman excitation source. The quantitative determination of strained‐silicon enhancement factors was also made. Copyright © 2011 John Wiley & Sons, Ltd.     

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

We demonstrate industrially feasible large‐area solar cells with passivated homogeneous emitter and rear achieving energy conversion efficiencies of up to 19.4% on 125 × 125 mm² p‐type 2–3 Ω cm boron‐doped Czochralski silicon wafers. Front and rear metal contacts are fabricated by screen‐printing of silver and aluminum paste and firing in a conventional belt furnace. We implement two different dielectric rear surface passivation stacks: (i) a thermally grown silicon dioxide/silicon nitride stack and (ii) an atomic‐layer‐deposited aluminum oxide/silicon nitride stack. The dielectrics at the rear result in a decreased surface recombination velocity of S_rear = 70 cm/s and 80 cm/s, and an increased internal IR reflectance of up to 91% corresponding to an improved J_sc of up to 38.9 mA/cm² and V_oc of up to 664 mV. We observe an increase in cell efficiency of 0.8% absolute for the cells compared to 18.6% efficient reference solar cells featuring a full‐area aluminum back surface field. To our knowledge, the energy conversion efficiency of 19.4% is the best value reported so far for large area screen‐printed solar cells. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Study of spin–phonon coupling in LiFe1 − xMnxPO4olivines

LiFe_{1 − x}Mn_xPO₄ olivines are promising material for improved performance of Li‐ion batteries. Spin–phonon coupling of LiFe_{1 − x}Mn_xPO₄ (x = 0, 0.3, 0.5) olivines is studied through temperature‐dependent Raman spectroscopy. Among the observed phonon modes, the external mode at ~263 cm⁻¹ is directly correlated with the motions of magnetic Fe²⁺/Mn²⁺ ions. This mode displays anomalous temperature‐dependent behavior near the Néel temperature, indicating a coupling of this mode with spin ordering. As Mn doping increases, the anomalous behavior becomes clearly weaker, indicating the spin–phonon coupling quickly decreases. Our analyses show that the quick decrease of spin–phonon coupling is due to decrease of the strength of spin–phonon coupling, but not change of spin‐ordering feature with Mn doping. Importantly, we suggest that the low electrochemical activity of LiMnPO₄ is correlated with the weak spin–phonon coupling strength, but not with the weak ferromagnetic ground state. Our work would play an important role as a guide in improving the performances of future Li‐ion batteries. Copyright © 2015 John Wiley & Sons, Ltd.     

The distributions of enhancement factors in close‐packed and nonclose‐packed surface‐enhanced Raman substrates

A method employing photochemical hole burning, previously developed to measure the distribution of Raman enhancement factors on a nanostructured substrate for surface‐enhanced Raman scattering, is used to compare the enhancement distributions of benzenethiol adsorbed on substrates optimized for 532 nm laser excitation consisting of close‐packed (CP) or nonclose‐packed (NCP) nanospheres. The ensemble‐averaged Raman enhancement factor was 2.8 times smaller for the NCP substrate. The measured distributions revealed additional information. For instance, 92% of the molecules on the CP substrate and 93.6% of the molecules on the NCP substrate had Raman enhancements below average. The minimum enhancements on both substrates were ~10⁴, but on the NCP substrate the maximum enhancement was 1.2 × 10⁸, whereas on the CP substrate the maximum was 2 × 10¹⁰. The Ag‐coated nanospheres form hemisphere‐on‐cylinder mushroom‐like structures on both lattices, but on the NCP lattice, one third of the molecules are on the flat regions between the mushrooms. The flats on the NCP lattice have enhancements of ~10⁴, showing they are part of a resonant plasmonic structure. The highest NCP enhancements of ~10⁸ are tentatively associated with regions at the bases of the mushrooms, whereas the highest CP enhancements of 2 × 10¹⁰ are tentatively associated with gaps between nanospheres where 0.0025% of the molecules reside. Copyright © 2011 John Wiley & Sons, Ltd.