Three‐dimensional unsteady thermocapillary flow under rotating magnetic field

Under a rotating magnetic filed (RMF), the instability of thermocapillary flow and its evolution with increasing Marangoni number (Ma) for semiconductor melt (Pr = 0.01) in a floating liquid bridge model (As = 1) are investigated numerically. Under 5 mT RMF, the thermocapillary flow is steady and axisymmetric with Ma < Ma_c, and the critical Marangoni number Ma_c for convection instability is 29.5, which is obtained by the direct numerical simulation. When the Ma is a little bit beyond the Ma_c, the thermocapillary flow loses stability to become a three‐dimensional rotating oscillatory convection, and a periodic oscillation is confirmed by the fast Fourier transform analysis, the oscillatory main frequency decays with increasing Ma. Under 1 mT–6 mT RMF, the Ma_c increases roughly with the magnetic strength except the Ma_c at 4 mT, where the corresponding change of flow mode after the instability is observed. The oscillatory convection occurs with a smaller Ma in the RMF than that without magnetic field. In addition, no instability toward a three‐dimensional steady convection, which is the state of thermocapillary flow without magnetic field after the first instability, is observed under the RMF.     

Thermocapillary‐buoyancy flow of silicon melt in a shallow annular pool

In order to understand the nature of surface spoke patterns on silicon melt in industrial Czochralski furnaces, a series of unsteady three‐dimensional numerical simulations were conducted for thermocapillary‐buoyancy flow of silicon melt in annular pool (inner radius r_i = 15 mm, outer radius r_o = 50 mm, depth d = 3 mm). The pool is heated from the outer cylindrical wall and cooled at the inner wall. Bottom and top surfaces either are adiabatic or allow heat transfer in the vertical direction. Results show that a small temperature difference in the radial direction generates steady roll‐cell thermocapillary‐buoyancy flow. With large temperature difference, the simulation can predict three‐dimensional oscillatory flow, which is characterized by spoke patterns traveling in the azimuthal direction. The small vertical heat flux (3 W/cm²) does not have significant effects on the characteristics of this oscillatory flow. Details of the flow and temperature disturbances are discussed and the critical conditions for the onset of the oscillatory flow are determined. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystallization of silicon thin films by current‐induced joule heating using a tungsten overcoat

A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Numerical study of influences of buoyancy and solutal Marangoni convection on flow structures in a germanium‐silicon floating zone

This paper presents a numerical study of Marangoni flows in a floating zone of germanium‐silicon crystals, which was performed by using a commercial finite element program FIDAD^TM. The numerical results point out that for fluids with a small Pr number the influence of buoyancy forces cannot be ignored in the numerical model. Furthermore, the competition between the thermocapillary (TC) and solutocapillary (SC) flows in the floating zones was qualitatively examined. If the TC flow is as strong as that in the Si‐rich floating zone, the SC flow may be restricted to the bottom area near the free surface. Otherwise, the SC flow may overcome the TC flow and induce a surface transfer of species. The numerical predictions agree well with the previous experiment results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Three‐dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of three‐dimensional computational simulations using the finite volume package Fluent in two different geometries, a new geometry as cylindro‐spherical and the traditional configuration as cylindro‐cylindrical. We found that the evolution of pressure which is has not been studied before; this important function is strongly related to the vorticity in the bulk flow, the free surface and the growth interface. It seems that the pressure is more sensitive to the breaking of symmetry than the other properties that characterize the crystal growth as temperature or velocity fields. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Melt Flow and Species Transport in μg‐Gradient‐Freeze Growth of Germanium

The result of a μg‐experiment on the Gradient‐Freeze growth of Ge:Zn with doping from the vapour phase shows a homogeneous distribution of the zinc in the melt, indicating the dominating role of a gravity‐independent transport mechanism. This effect is investigated numerically on the basis of a global model of the growth setup. The numerical simulation includes the melt flow and the transport of the dopant taking into account buoyant and thermocapillary forces. The results confirm the minor influence of gravity on the species transport. The complete mixing of the melt can be explained by thermocapillary (Marangoni) convection only.     

Electrophysical properties of double‐layer nickel‐base and vanadium‐base films within the intermediate temperature range

Phase composition of the double‐layer Ni‐base and V‐base films obtained and annealed in vacuum of 10^‐4–10^‐5 Pa within the temperature range of 700–900 K is studied by technique of electronography and transmission electron microscopy. Temperature dependence of resistance and temperature coefficient of resistance (TCR) was investigated. Comparison of TCR experimental data with the calculated data was made at T = 300 K on basis of semiclassical and macroscopic models and formula for TCR of alloys. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of substrate temperature and oxygen/argon flow ratio on the electrical and optical properties of Ga‐doped ZnO thin films prepared by rf magnetron sputtering

Effects of substrate temperature and atmosphere on the electrical and optical properties of Ga‐doped ZnO thin films deposited by rf magnetron sputtering were investigated. The electrical resistivity of Ga‐doped ZnO (GZO) films decreases as the substrate temperature increases from room temperature to 300°C. A minimum resistivity of 3.3 × 10^–4 Ω cm is obtained at 300°C and then the resistivity increases with a further increase in the substrate temperature to 400°C. This change in resistivity with the substrate temperature is related to the crystallinity of the GZO film. The resistivity nearly does not change with the O₂/Ar flow ratio, R for R < 0.25 but increases rapidly with R for R > 0.25. This change in resistivity with R is also related to crystallinity. The crystallinity is enhanced as R increases, but if the oxygen partial pressure is higher than a certain level (R = 0.25 ± 0.10) gallium oxides precipitate at grain boundaries, which decrease both carrier concentration and mobility. Optical transmittance increases as R increases for R < 0.75. This change in transmittance with R is related to changes in oxygen vacancy concentration and surface roughness with R. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Instability of the melt flow in VGF growth with a traveling magnetic field

The linear instability of a thermally stratified melt flow in the VGF configuration driven by a traveling magnetic field (TMF) is considered numerically and experimentally. The dependency of the instability threshold on the governing parameters is found for several cuts through the parameter space covering a wide range of possible applications. In a first approximation the linear instability occurs when the dimensionless TMF forcing parameter reaches the magnitude of the Grashof number. This is particularly true in a medium-sized crucible where the first instability is axisymmetric and sub-critical. As the Grashof number increases the flow develops self-similar boundary layers and the instability becomes three-dimensional. The instability originates in the bottom boundary layer where the convection tends to suppress the imposed temperature gradient in the central part of the melt zone. It is shown that the TMF may serve as a tool to control the phase interface shape without causing flow instationarity when the crucible diameter exceeds a certain value. This value is estimated to be around 6 cm for GaAs. The flow stays stable if the TMF is used for a reversal of the meridional flow with the aim to remove a possible dopant concentration peak on the axis.     

Investigation of the growth processes from vapor phase of silicon carbide epitaxial layers: Thermodynamic analysis of the high temperature processes in the system Si‐C‐H‐Cl

In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condensed phases C, Si and SiC have been determined. The optimal conditions giving the maximum yield of silicon carbide by pyrolysis of mixture of volatile compounds of carbon and silicon have been defined. The thermodynamic analysis of the examined system showed that the increasing of the content of hydrogen in the initial mixture allows to decrease the optimal temperature for obtaining of silicon carbide by the method of pyrolysis and essentially to increase its maximum possible yield. (© 2008 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Identification of the dynamics of plasma‐induced damage in a CuInSe2 thin film by fractal processing

A planar ionization system for rapid visualization and recording the resistance inhomogeneity and photoconductivity distribution in a chalcopyrite‐type semiconductor (CuInSe₂) copper‐indium‐diselenide film is studied. A part of the discharge energy is transferred to the electrodes of the system by the bombardment of the electrode surface due to an electron‐ion flow. This process leads to the sputtering mechanism of the electrode surface material. It is shown that the plasma‐induced damage (PID) in a CuInSe₂ thin film was primarily due to the effectiveness of sputtering and physico‐chemical interactions in the discharge gap during the transition from Townsend to the glow type. At the same time a nondestructive method is suggested for the analysis of the dynamics of PID in the CuInSe₂ thin film by fractal processing in the planar ionization system. Some properties of the device have been evaluated, such as a relative change of the resistance inhomogeneity is determined by a relative change of discharge light emission (DLE) intensity when a current is passed through an ionization cell. For the quantitative analysis of the change in the dynamic feature of PID of CuInSe₂ thin films, fractal dimension analysis was used following the records of the DLE intensity. The quality of the film was analyzed using both the profile and spatial distributed DLE intensities data showing the surface inhomogeneity and damage in the thin film as function of time. Thus, by using fractal concept, the order of the surface damage and the quality of the CuInSe₂ as function of time can be assessed exactly and the size and location of the surface inhomogeneities in thin film to be ascertained. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth of SiGe bulk crystals with uniform composition by utilizing feedback control system of the crystal–melt interface position for precise control of the growth temperature

We developed an automatic feedback control system of the crystal–melt interface position to keep the temperature at the interface constant during growth, and demonstrate its successful application to grow Ge-rich SiGe bulk crystals with uniform composition. In this system, the position of the crystal–melt interface was automatically detected by analyzing the images captured using in situ monitoring system based on charge-coupled-devices camera, and the pulling rate of the crucible was corrected at every 1 min. The system was found to be effective to keep the crystal–melt interface position during growth even when the variation of the growth rate is quite large. Especially, the interface position was kept for 470 h during growth of Ge-rich SiGe bulk crystal when we started with a long growth melt of 80 mm. As a result, a 23 mm-long Si_0.22Ge_0.78 bulk crystal with uniform composition was obtained thanks to the constancy of the growth temperature during growth through the control of the interface position. Our technique opens a possibility to put multicomponent bulk crystal in a practical use.     

Microwave dielectric properties of (1‐x)La(Mg0.5Sn0.5)O3‐x(Sr0.8Ca0.2)3Ti2O7 ceramic system with a near zero temperature coefficient of resonant frequency

In this study, the microwave dielectric properties of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system prepared by the conventional solid‐state method have been investigated for application in mobile communication. It was found that the diffraction peaks of (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system shift to higher angles as x increases from 0.2 to 0.4. It was also found that the X‐ray diffraction patterns of the 0.8La(Mg_0.5Sn_0.5)O₃‐0.2(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramics exhibited no significant phase difference at different sintering temperatures. The average grain size of the (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system decreased from 6.4 to 4.3 μm as the value of x increased from 0.2 to 0.4 sintered at 1550 °C for 4 h. The dielectric constant increased from 26.6 to 35.9 and the quality factor (Q×f) decreased from 31,600 to 23,300 GHz for (1‐x)La(Mg_0.5Sn_0.5)O₃‐x(Sr_0.8Ca_0.2)₃Ti₂O₇ ceramic system as the x value increases from 0.2 to 0.4 sintered at 1550 °C for 4 h. The average value of temperature coefficient of resonant frequency (τ_f) increased from ‐18 to +8 ppm/ K as the x value increases from 0.2 to 0.4. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)